Радиационно-стойкие СБИС СнК и ОЗУ — особенности проектирования по КМОП технологиям объемного кремния

Abstract

The effect of various types of radiation and heavy nuclear particles on VLSI fabricated using CMOS technologies for bulk silicon at a level of 250–90 nm is analyzed. Developed and certified on test crystals (TC) are constructive-topological and circuit solutions for elements of digital libraries, complex-functional RAM blocks and peripheral mixed-signal blocks for designing radiation-hardened VLSI of the “system-on-chip” (SoC) type and RAM of category RT (products with an increased level of radiation resistance). The methodology of radiation-hardened by design (RHBD) has been further developed. For CAD tools, a design environment for VLSI of the RT category was created for manufacturing at Russian factories using available CMOS bulk technologies. Based on this design environment, competitive radiation-hardened high-performance processor CMOS VLSI SoC and VLSI RAM were created. Basic technical solutions are protected by RF patents.