Abstract
Investigation and development of a separating mesa-structure creating technology for fabricating multi-junction solar cells based on the GaInP/GaInAs/Ge heterostructure has been carried out. Studied were methods of etching of heterostructure layers: liquid chemical etching in the etchants based on HBr, H2O2, K2Cr2O7 and plasma-chemical etching in the stream of operating gas BCl3. The comparative analysis of etching methods was studied. The protective masks based on photoresist layer and TiOx/SiO2 were developed. Multi-junction solar cells with low parameters of leakage current less than 10-7 A at voltage 0,5-1 V were created.
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