Abstract
In this work, the effect of the irradiation intensity on the radiation hardness of CMOS integrated circuits (ICs) was studied. We investigated 3 types of ICs manufactured according to design rules from 0.8 to 3 microns, and used in various information transmission systems: 1586IN4, HEF4093BT and MC14504B. The U-31/33 accelerator of electrons has been used for the study in both gamma-ray mode (for moderate intensity) and pulse electron generation mode (for high intensity). As a result, it was revealed that an increase in the intensity of exposure by 4 orders of magnitude might result in a radiation hardness decrease up to factor of 30. This circumstance has to be taken into account when testing CMOS ICs for radiation hardness to high intensity effects. The obtained experimental data confirm theoretical understanding of the influence of increased irradiation intensity on the dose hardness of CMOS ICs.
Highlights
Зависимости уровня отказа изделия от интенсивности ИИ [4, 13] при временах облучения, превосходящих характерную длительность переноса носителей через диэлектрик
The influence of high ionizing dose rate on CMOS integrated circuits (ICs) radiation hardness used in data transmission elements
We investigated 3 types of ICs manufactured according to design rules from 0.8 to 3 microns, and used in various information transmission systems: 1586IN4, HEF4093BT and MC14504B
Summary
Зависимости уровня отказа изделия от интенсивности ИИ [4, 13] при временах облучения, превосходящих характерную длительность переноса носителей через диэлектрик. ИЗЛУЧЕНИЯ НА СТОЙКОСТЬ КМОП МИКРОСХЕМ СИСТЕМ ПЕРЕДАЧИ ИНФОРМАЦИИ В данной работе проведено исследование влияния интенсивности воздействия при наборе дозы на стойкость КМОП интегральных схем (ИС). Данное обстоятельство необходимо учитывать при проведении испытаний КМОП ИС на стойкость к воздействию импульсного ионизирующего излучения.
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