ВИДИ НЕСПРАВНОСТЕЙ МІКРОПРОЦЕСОРНИХ ВЕЛИКИХ ІНТЕГРАЛЬНИХ СХЕМ І УМОВИ ЇХ ПРОЯВУ З УРАХУВАННЯМ ЕНЕРГОДИНАМІЧНОГО ПРОЦЕСУ

Abstract

The article deals with a mathematical model of microprocessor-based large integrated circuits for monitoring the technical condition, taking into account the energy-dynamic process of this class of microelectronic products, and analyzes typical faults and conditions of their manifestation. The current stage of development of the radioelectronic equipment of the Armed Forces of Ukraine is characterized by the widespread introduction of devices and systems that use large integrated circuits and microprocessor-based large integrated circuits. This is due to the need to process information at a fairly low cost of equipment. When using digital devices with sets of microprocessor-based large integrated circuits, the issue of monitoring the performance and detection of defects in such devices is acute. To improve new methods of diagnosing digital devices, it is necessary to analyze the types of faults that occur in microprocessor-based large integrated circuits. A chip will function properly if it is determined that all instruction sequences are executed correctly under various combinations of data. Complete verification of all instructions executed by a microprocessor-based large integrated circuit is not possible due to the very long length of the tests used for verification. Therefore, to provide test control of the performance of microprocessor-based large integrated circuits, it is necessary to build tests based on a given set of defects, reliability, and time to decision. The analysis of physical processes in logic elements manufactured using the metal-dielectric-semiconductor technology showed that the presence of existing defects leads to the absence of distortion of the quasi-short-circuit current pulse and the output response. That is, the condition for the manifestation of the defect is fulfilled and the diagnostic time is reduced.