Abstract
Single-crystal c-Ge plates implanted with Ag+ ions with an energy of E=30 keV, current density of the ion beam J = 5 μA/cm2 and a dose of D=2.5×1016 ion/cm2 were subjected to rapid thermal annealing by single light pulses of various durations from 1 up to 9.5 s. By scanning electron microscopy and optical reflection spectroscopy measurements it was shown that after ion implantation an amorphous porous Ag:PGe layer of spongy structure, consisting of Ge nanowires, is formed on the surface of c-Ge substrates. It was found that the annealing with an increase in the pulse duration up to 5 s successively leads to an increase in the Ge nanowire diameters from 26 to 35 nm. With longer pulses, the porous Ag:PGe structure is destroyed and Ag evaporates from the implanted layers.
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