Abstract
The effect of irradiation with helium ions with an energy of 40 keV and doses of 1·1014 – 2·1017 cm–2 on the microstructure and phase composition of ceramics based on silicon carbide has been studied. The irradiation growth of the 6H–SiC crystal lattice was revealed. However, at a dose of 1·1016 cm–2, there is a decrease in deformation associated with the formation of gas-vacancy clusters, which are sinks for radiation defects. Amorphization of the near-surface layer has been established.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
