ИСПОЛЬЗОВАНИЕ ОРТОГОНАЛЬНЫХ СИЛЬНЫХ ЭЛЕКТРИЧЕСКИХ И МАГНИТНЫХ ПОЛЕЙ ДЛЯ СОЗДАНИЯ ЧАСТОТНО-ПРЕОБРАЗОВАТЕЛЬНЫХ УСТРОЙСТВ АВТОДИННОГО ТИПА

Abstract

In the framework of the drift-diffusion model of carrier transport in the bulk of III–V typesemiconductors, under external action of strong constant electric and magnetic fields orthogonallyoriented relative to each other, a new principle for applying the discovered effects is proposed, whichtake into account the nonlinearities of the output parameters of the working chip, which leads to thepossibility creation of new semiconductor structures controlled by a magnetic field (SSCMF). Previously,the diffusion component of the output current density was not taken into account as a separateeffect arising under the orthogonal action of strong electric and magnetic components, which was atfirst time considered in this paper. It is shown that this component is a part of the inductive transverseoutput current and can be considered as an independent effect. The proposed practical applicationis based on the classical relations that describe the component spatial representation of the effectivemass energy dependence and the parameters of the kinetic equations for the carriers drift andheating in the bulk of highly mobile III–V type semiconductors structures. (The energy dependence ofthe reciprocal effective mass value was obtained under the assumption that this parameter becomesheavier in the framework of the two-valley representation. However, the mechanism of such increasingis not considered in detail, but is taken into account as a result of expansion in a Taylor series.)At the same time, some new phenomena were also hypothetically discovered: a diffusion detectoreffect and a transverse induction effect controlled by a magnetic field, similar in its manifestation tothe Gunn effect observed in this direction. The results obtained open the prospect for creating fundamentallynew frequency-converting devices based on the above SSCMF, such as autodyne-type converters(mixers), one of the designs of which is also proposed in this work in a waveguide version. Inthe case of experimental confirmation of the discovered effects, which can be investigated using theblock diagram of the measuring setup proposed in the work, we can conclude that there are promisingnew applications of magnetically controlled semiconductor structures. In addition, equipmentdevelopers will be interested in the possibility of using the magnetic field orientation angle to controlthe output parameters of such structures as part of converters