Abstract
Optically active silicon vacancy defects (VSi) with an electron spin S = 3/2 in a 6H-SiC/15R-SiC silicon carbide heterostructure grown by high-temperature sublimation technique have been studied. By means of low-temperature micro-photoluminescence (µ-PL) and electron paramagnetic resonance (EPR) techniques, we demonstrate the potential to generate five disparate types of VSi centers with distinct spectral properties in the aforementioned heterostructure using proton irradiation with E = 15 MeV. Wherein each type of VSi center is defined by its zero-phonon line (ZPL) and a distinct value of spin sublevel splitting in a zero magnetic field. As a result, we have demonstrated the scalability of the number of optically active spin centers that can be enclosed within a single crystalline matrix.
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