Abstract
The method of modified metal-assisted electrochemical etching was proposed and arrays of nanostructured porous silicon wires on n-type monocrystalline silicon substrate with crystallographic orientation (111) were obtained. The influence of the electrolyte composition at the second stage of obtaining on the morphology of silicon wires by scanning electron microscopy methods was revealed. The phase composition of porous silicon wires was controlled by Raman spectroscopy.
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