Abstract
The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated. A comparative assessment of typical radiative hardness levels for other types of non-volatile memories such as flash, ferroelectric (FRAM), magnetoresistive (MRAM) memory was provided in this study. The main advantages and disadvantages of using various technologies for the manufacture of non-volatile memory microcircuits with increased resistance to ionizing effects are described.
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