ВОЗМОЖНОСТИ И ОГРАНИЧЕНИЯ ЛАЗЕРНЫХ МЕТОДОВ ПРИ ОЦЕНКЕ ПАРАМЕТРОВ ЧУВСТВИТЕЛЬНОСТИ БИС К ЭФФЕКТАМ ВОЗДЕЙСТВИЯ ТЯЖЕЛЫХ ЗАРЯЖЕННЫХ ЧАСТИЦ

Abstract

The paper analyzes the applicability of methods for estimating the parameters of the VLSI sensitivity by single radiation effects (SEE) using focused laser radiation of picosecond duration in order to expand their application for submicron VLSI. A comparison of ionization track structure from a heavy charged particle and the ionization region of a semiconductor structure under focused laser radiation is made. It is shown that the comparison of geometric dimensions should be carried out during the ionization reaction, when the ionization region of the track expands due to ambipolar diffusion. Limitations due to the influence of optical inhomogeneities located on the surface of the VLSI chip, as well as under irradiation from the bottom side of the chip are determined. It is shown that laser methods can be applied to estimate the dependences of cross sections of single radiation effects as a function of linear energy transfer (LET) for semiconductor structures with sizes significantly smaller than the diameter of the focused laser radiation. Additional features of laser methods are presented to determine the SEE location on chip surface and to study the influence of the electrical mode and the effectiveness of SEE parry methods. The presented results allow the use of laser technique to estimate SEE sensitivity parameters estimation for deep submicron VLSI.