Прогнозирование величины захваченного заряда в захороненном оксиде кремния структур кремний-на-изоляторе с применением эффекта Пула-Френкеля

Abstract

The opportunity to predict trapped charge value in buried silicon oxide of silicon-on-insulator structures using Poole−Frenkel effect was investigated. Using measuring and modeling of current–voltage characteristics of buried silicon oxide at different temperatures conditions for Poole−Frenkel effect in this layer were determined. Processes taking place in buried oxide during measurement of current–voltage characteristics and annealing were considered. Conditions of thermal field treatment of buried oxide for radiation exposure imitation using injection were determined. Dependence of accumulated positive charge value in buried silicon oxide as a result of injection on Poole−Frenkel current value was estimated. The opportunity to use Poole−Frenkel effect for buried oxide defectiveness evaluation during manufacturing of microcircuits with enhanced dose radiation hardness is shown.