Abstract
We investigate electrical properties of mono- and bilayer single-walled carbon nanotube (SWCNT) films located on silicon oxide substrates. The substrate is a silicon dioxide crystal film characterized by a P42/mnm space group with (100) surface. The single-walled carbon nanotubes are armchair nanotubes of subnanometer diameter (4,4) and nanometer diameter (7,7). It is found that the diameter of the nanotubes is of great importance and determines the electronic properties of the film on the substrate in a large degree. Thin tubes (4,4) formed in a bilayer film (with a reciprocally perpendicular orientation relative to each other) have the least resistance. The substrate has insignificant influence on the electronic properties of such a film. Films with larger diameter tubes are characterized by a higher resistance value. It is found that the important role is played by the contact surface of the SWCNT–substrate.
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