Temperature Dependence Research Articles

Phase Transitions and Nonlinear Optical Property Modifications in BaGa4Se7.

Phase transitions can change the crystal structure and modify the physical properties of crystals. In this work, we investigate the phase transition behavior in BaGa4Se7, an important middle infrared (mid-IR) nonlinear optical (NLO) crystal, in the temperature range from room temperature to 1173 K. Interestingly, the BaGa4Se7 crystal undergoes a reversible ferroelastic phase transition at T = 528 K, resulting in the presence of a newly discovered phase (γ-phase) at the higher temperature. The experimental temperature dependence of optical birefringence, as well as the first-principles birefringence and NLO coefficients, reveals that the γ-phase exhibits larger birefringence and better NLO properties compared with those of the low-temperature phase (α-phase). This work demonstrates that phase-transition-induced structural modification can improve the mid-IR NLO properties, which would provide an effective avenue to obtain materials with good optoelectronic performance.

Temperature dependence mechanism of high-temperature oxidation of transition metal silicide MoSi2.

Transition metal silicides represented by MoSi2 have excellent oxidation resistance and are widely used as high-temperature anti-oxidation coatings in hot end components of power equipment. However, the mechanism of temperature-dependent growth of MoSi2 oxidation products has not been revealed. Therefore, this study investigated the formation characteristics of oxide film and silicide-poor compound on MoSi2 at temperatures of 1000-1550℃ through high-temperature oxidation experiments, combined with microscopic Raman spectroscopy, SEM, and XRD characterizations. The result showed that MoSi2 underwent high-temperature selective oxidation reactions at 1000-1200℃, forming MoO2 and SiO2 oxide film on the substrate. As the oxidation temperature increased to 1550℃, after 100 hours of oxidation, along with the disappearance of MoO2 and the phase transformation of SiO2, a continuous Mo5Si3 layer with a thickness of approximately 47 μm was formed at the SiO2-MoSi2 interface. Thermodynamics and kinetic calculations further revealed the mechanism of temperature-dependent growth of oxidation products (MoO2 and Mo5Si3) during high-temperature oxidation process of MoSi2. As the temperature increased, the diffusion flux ratio of O and Si decreased, leading to a decrease in oxygen concentration at the interface and promoting the growth of the Mo5Si3 layer. Its thickness is an important indicator for evaluating the oxidation resistance of MoSi2 coatings during service. This study provides experimental and mechanistic insights into the temperature-dependent growth behavior of Mo5Si3 during the high-temperature oxidation of MoSi2 coating, and provides guidance for predicting the service life and improving the oxidation resistance of silicide coatings.

Sperimagnetic states in amorphous Gd x (FeCo)1-x (0.2 ≤ x ≤ 0.3) alloys: insights from stochastic magnetic anisotropy analysis

Materials crucial for the advancement of magnetic recording technologies stand as pivotal elements in the development of a new generation of recording devices. Recent advancements in the manipulation of magnetization through laser pulses have underscored the significance of magnetic materials exhibiting robust magneto-optical properties. This study explores the manifestation of a sperimagnetic state in ferrimagnetic amorphous Gd x (FeCo)1−x alloys utilizing a stochastic magnetic anisotropy approach. Phase diagrams ‘magnetic field’-‘temperature’ and temperature dependencies of magnetization and compensation point were calculated using the mean-field approximation for temperature range from 50 to 700 K and different stoichiometry of the alloy, namely 0.2 ≤ x ≤ 0.3. Accounting for the stochastic anisotropy intrinsic to rare earth ions, a distribution of magnetic moments within the amorphous solid is discerned. Notably, this distribution predominantly manifests at the fringes of a canted phase, constituting the sperimagnetic structure. We demonstrate a direct correlation between an increased variance in normally distributed anisotropy constants of rare earth ions and a corresponding augmentation in the standard deviation of magnetization within the sperimagnetic structure. These findings not only contribute to a deeper understanding of the interplay between material composition and magnetic properties but also provide valuable insights for the advancement of magnetic recording technologies.

Low field mobility in bulk GaN and its ternary AlGaN/GaN compounds (quantum kinetic approach)

Analytical expressions for the low-field mobility of charge carrier gases with three-(3D), two-(2D) and one-(1D) dimensionalities are obtained. Multi-ion ionized impurities scattering, acoustic and polar optic phonons are considered as scattering mechanisms. The calculated values of mobility are compared to known experimental data for bulk (3D) n-and p-type wurtzite, n-type zinc-blende GaN crystals and low dimensional (2D and 1D) ternary GaAlN compounds. The resulting analytical expressions give the dependences of mobility on dimensionality of charge carrier gas, its density, effective mass, temperature and confining dimensions. A comparison of the experimental and calculated temperature dependences of the mobility in bulk GaN crystals (3D) and in AlGaN/GaN nanowires (1D) shows that the mobility at 100\\,{\ ext{K}}$?> T>100K is determined by the scattering of charge carriers by polar optical phonons with an energy of 91.2 meV. The temperature dependences of mobility in Al0.25Ga0.75N/GaN heterostructures (2D) at 100\\,{\ ext{K}}$?> T>100K are in consistent with experiment for electron scattering by polar optical phonons with a noticeably higher energy of 160 meV. We associate this fact with the heterointerface, which according to well-known theoretical studies can change both the strength of electron polar optical phonons scattering and the energy of the phonons.

Chemical Potential Analysis as an Alternative to the van't Hoff Method: Hypothetical Limits of Solar Thermochemical Hydrogen.

The van't Hoff method is a standard approach for determining reaction enthalpies and entropies, e.g., in the thermochemical reduction of oxides, which is an important process for solar thermochemical fuels and numerous other applications. However, by analyzing the oxygen partial pressure pO2, e.g., as measured by thermogravimetric analysis (TGA), this method convolutes the properties of the probe gas with the solid-state properties of the examined oxides, which define their suitability for specific applications. The "chemical potential method" is here proposed as an alternative. Using the oxygen chemical potential ΔμO instead of pO2 for the analysis, this method does not only decouple gas-phase and solid-state contributions but also affords a simple and transparent approach to extracting the temperature dependence of the reduction enthalpy and entropy, which carries important information about the defect mechanism. For demonstration of the approach, this work considers three model systems; (1) a generic oxide with noninteracting, charge-neutral oxygen vacancy defects, (2) Sr0.86Ce0.14MnO3(1-δ) alloys with interacting vacancies, and (3) a model for charged vacancy formation in CeO2, which reproduces the extensive experimental TGA data available in the literature. The reduction behavior of these model systems obtained from the chemical potential method is correlated with simulated results for the thermochemical water splitting cycle, highlighting the exceptional behavior of CeO2, which originates from defect ionization. The theoretical performance limits for solar thermochemical hydrogen within the charged defect mechanism are assessed by considering hypothetical materials described by a variation of the CeO2 model parameters within a plausible range.

Correlative In Situ Spectro-Microscopy of Supported Single CuO Nanoparticles: Unveiling the Relationships between Morphology and Chemical State during Thermal Reduction.

The activity, selectivity, and lifetime of nanocatalysts critically depend on parameters such as their morphology, support, chemical composition, and oxidation state. Thus, correlating these parameters with their final catalytic properties is essential. However, heterogeneity across nanoparticles (NPs) is generally expected. Moreover, their nature can also change during catalytic reactions. Therefore, investigating these catalysts in situ at the single-particle level provides insights into how these tunable parameters affect their efficiency. To unravel this question, we applied spectro-microscopy to investigate the thermal reduction of SiO2-supported copper oxide NPs in ultrahigh vacuum. Copper was selected since its oxidation state and morphological transformations strongly impact the product selectivity of many catalytic reactions. Here, the evolution of the NPs' chemical state was monitored in situ during annealing and correlated with their morphology in situ. A reaction front was observed during the reduction of CuO to Cu2O. From the temperature dependence of this front, the activation energy was extracted. Two parameters were found to strongly influence the NP reduction: the initial nanoparticle size and the chemical state of the SiO2. substrate. The CuOx reduction was found to be completed first on smaller NPs and was also favored over partially reduced SiOx regions that resulted from X-ray beam irradiation. This methodology with single-particle level spectro-microscopy resolution provides a way of isolating the influence of diverse morphologic, electronic, and chemical influences on a chemical reaction. The knowledge gained is crucial for the future design of more complex multimetallic catalytic systems.

Electrical characteristics and trap signatures for Schottky barrier diodes on 4H-SiC, GaN-on-GaN, AlGaN/GaN epitaxial substrates

Abstract The forward and reverse current transport mechanisms, temperature dependence of Schottky barrier height (SBH) and ideality factor, barrier inhomogeneity analysis, and trap parameters for Schottky barrier diodes (SBDs) fabricated on 4H-SiC, GaN-on-GaN and AlGaN/GaN epitaxial substrates are reported. High SBH is identified for Ni/4H-SiC (1.31 eV) and Ti/4H-SiC (1.18 eV) SBDs with a low leakage current density of < 10-8 A/cm2 at -200 V. Thermally stimulated capacitance (TSCAP) detects the well-known Z1/2 electron trap at EC – 0.65 eV in both 4H-SiC SBDs, while an additional deep-level trap at EC – 1.13 eV is found only in Ni/4H-SiC SBDs. The vertical Ni/GaN SBD exhibits a promising SBH of 0.83 eV, and two electron traps at EC – 0.18 eV and EC – 0.56 eV are identified from deep-level transient Fourier spectroscopy (DLTFS). A peculiar two-diode model behaviour is detected at Metal/GaN/AlGaN/GaN interface of high-electron mobility transistor (HEMT); the first diode (SBH-1 of 1.15 eV) exists at the standard Metal/GaN Schottky junction, whereas the second diode (SBH-2 of 0.72 eV) forms due to the energy difference between the AlGaN conduction band and the heterojunction Fermi level. The compensational Fe-doping-related buffer traps at EC – 0.5 eV and EC – 0.6 eV are determined in the AlGaN/GaN HEMT, through the drain current transient spectroscopy (DCTS) experiments.

Numerical and experimental investigation of temperature dependence vs. mobility degradation on I–V characteristics in N-LDMOS structure

The thermal behavior analysis is undoubtedly the main concern when studying semiconductor devices' and structures' physical mechanics. To the best of our knowledge, simulations studies with an experimental validation of the temperature effect vs. mobility on electrical characteristics in semiconductor devices, specifically in LDMOSFET devices are not well explored in the research literature. Considering this, this paper investigates the thermal influence vs. mobility degradation in the N-LDMOS structure and its impact on electrical performance. It also addresses the temperature impact on channel current Ids and these effects on component performance. The zero-temperature coefficient (ZTC) is evaluated in a N-LDMOS structure using numerical simulations and experimental tests. A study of the drain current behavior at ZTC (IZTC) is proposed in the linear and saturation regions. The influence of temperature mobility degradation on IZTC is analyzed. The consequences of mobility degradation show that the temperature increase gives rise to two contradictory phenomena: firstly, the channel current Ids increases when its value is lower than the current level (IZTC) and secondly, decreases when is higher. These two phenomena are studied by using simulated and experimental approaches, in order to extract and prove the physical aspects near the gate-drain access region (hot spot, electric field, electron concentration, surface carrier density, electron mobility), at the parameter evaluation origin, using SILVACO-TCAD based numerical simulation. Mobility degradation due to the temperature effect is compared to the critical value in N-LDMOS based on I–V behavior obtained with experimentation and simulations. This is explained by the role of negative thermal coefficient in LDMOS transistors. This coefficient proves to be particularly beneficial in terms of mobility gain at low inversion densities.

Effect of Alloying Elements on the High-Temperature Yielding Behavior of Multicomponent γ′-L12 Alloys

The exceptional mechanical properties of Ni-based high entropy alloys are due to the presence of ordered L12 (γ′) precipitates embedded within a disordered matrix phase. While the strengthening contribution of the γ′ phase is generally accepted, there is no consensus on the precise contribution of the individual strengthening mechanisms to the overall strength. In addition, changes in alloy composition influence several different mechanisms, making the assessment of alloying conditions complex. Multicomponent L12-ordered single-phase alloys were systematically developed with the aid of CALPHAD thermodynamic calculations. The alloying elements Co, Cr, Ti, and Nb were chosen to complexify the Ni3Al structure. The existence of the γ′ single phase was validated by microstructure characterization and phase identification. A high-temperature compression test from 500 °C to 1000 °C revealed a positive temperature dependence of strength before reaching the peak strength in the studied alloys NiCoCrAl, NiCoCrAlTi, and NiCoCrAlNb. Ti and Nb alloying addition significantly enhanced the high-temperature yield strengths before the peak temperature. The yield strength was modeled by summing the individual effects of solid solution strengthening, grain boundary strengthening, order strengthening, and cross-slip-induced strengthening. Cross-slip-induced strengthening was shown to be the key contributor to the high-temperature strength enhancement.

Mechanism for sound dissipation in a two-dimensional degenerate Fermi gas

We numerically study the transport properties of a two-dimensional Fermi gas in a weakly and strongly interacting regimes, in the range of temperatures close to the transition to a superfluid phase. For that we excite sound waves in a fermionic mixture by using the phase imprinting technique, follow their evolution, and finally determine both their speed and attenuation. Our formalism, originated from a density-functional theory, incorporates thermal fluctuations via the grand canonical ensemble description and with the help of Metropolis algoritm. From numerical simulations we extract temperature dependence of the sound velocity and diffusivity as well as the dependence on the interaction strength. We emphasize the role of virtual vortex–antivortex pairs creation in the process of sound dissipation.

Molecular Simulation of Covalent Adaptable Networks and Vitrimers: A Review

Covalent adaptable networks and vitrimers are novel polymers with dynamic reversible bond exchange reactions for crosslinks, enabling them to modulate their properties between those of thermoplastics and thermosets. They have been gathering interest as materials for their recycling and self-healing properties. In this review, we discuss different molecular simulation efforts that have been used over the last decade to investigate and understand the nanoscale and molecular behaviors of covalent adaptable networks and vitrimers. In particular, molecular dynamics, Monte Carlo, and a hybrid of molecular dynamics and Monte Carlo approaches have been used to model the dynamic bond exchange reaction, which is the main mechanism of interest since it controls both the mechanical and rheological behaviors. The molecular simulation techniques presented yield sufficient results to investigate the structure and dynamics as well as the mechanical and rheological responses of such dynamic networks. The benefits of each method have been highlighted. The use of other tools such as theoretical models and machine learning has been included. We noticed, amongst the most prominent results, that stress relaxes as the bond exchange reaction happens, and that at temperatures higher than the glass transition temperature, the self-healing properties are better since more bond BERs are observed. The lifetime of dynamic covalent crosslinks follows, at moderate to high temperatures, an Arrhenius-like temperature dependence. We note the modeling of certain properties like the melt viscosity with glass transition temperature and the topology freezing transition temperature according to a behavior ruled by either the Williams–Landel–Ferry equation or the Arrhenius equation. Discrepancies between the behavior in dissociative and associative covalent adaptable networks are discussed. We conclude by stating which material parameters and atomistic factors, at the nanoscale, have not yet been taken into account and are lacking in the current literature.

Temperature dependency of impedance, dielectric, and conductivity properties for Si-p/beta-FeSi2-n heterostructures created through facing target sputtering

To connect thermal dependency with Si-p/beta-FeSi2-n heterostructure efficiency, this work explored the impedance characteristics accompanied by dielectric and conductivity properties under different temperatures of 160–400 K. The Nyquist impedance plots for the heterostructures showed a semicircular arc that shrank as the temperature increased. These can be equivalently interpreted as a loop of single resistance paralleled to single constant phase element representing the heterostucture which also paralleled to inductive elements representing the inductive effect, serially connected to electrode resistance. The dielectric properties implied a shift in behavior for the relaxation process since donor-acceptor deionization occurred when the temperatures reached 320 K or higher due to shorter relaxation time and higher thermal dissipation. The conductivity properties indicate that the transport mechanism at 180 K or lower involves a prolonged transitional movement before transitioning into localized hopping at higher temperatures, corresponding to faster carrier movement. The relaxation and activation energy of the heterostructure reveal drastic transition of the energy from a low temperature of 160–240 K to a higher temperature of 320–400 K, where the electrical mechanism of the heterostructures become highly dependent on the temperature likely due to the high carrier density based on unevenly high activation energy.

Study of conduction mechanisms of InSeSb nano-chalcogenide alloys.

The electrical conduction mechanisms for bulk samples of In0.1Se0.9-xSbx (x= 0, 0.04, 0.08 and 0.12) nano-chalcogenide system, synthesized by the melt-quenching technique are investigated through current-voltage (I-V) characteristics. For the detailed study of conduction mechanism pellets of bulk samples are prepared. A thorough examination of electrical conductivity is done in the temperature range of 295-318 K and 0-50 V voltage range. From I-V measurements it is observed that samples are showing ohmic nature at lower field and non-ohmic nature at relatively higher field values. The temperature dependence of DC conductivity is analyzed using the Arrhenius relationship which is found to increase with Sb content. The value of activation energy and pre-exponential factor are calculated, which revealed that the conduction is due to the hopping of charge carriers among the localized states. Different parameters of Mott's variable range hopping such as degree of disorder T0, density of localized states N(EF), hopping distance (Rhop), and hopping energy (W) are calculated. For the high field conduction process Poole-Frenkel, and Schottky processes are studied.

Normal-to-Supercooled Liquid Transition in Molecular Glass-Formers: A Hidden Structural Transformation Fuelled by Conformational Interconversion.

Molecular dynamics and transport coefficients change significantly around the so-called Arrhenius crossover in glass-forming systems. In this article, we revisit the dynamic processes occurring in a glass-forming macrocyclic crown thiaether MeBzS2O above its glass transition, revealing two crossover temperatures: TB at 309 and TA at 333 K. We identify the second one as the Arrhenius crossover that is closely related to the normal-to-supercooled liquid transition in this compound. We show that the transformation occurring at this point goes far beyond molecular dynamics (where the temperature dependence of structural relaxation times changes its character from activation-like to super-Arrhenius), being reflected also in the internal structure and diffraction pattern. In this respect, we found a twofold local organization of the nearest-neighbor molecules via weak van der Waals forces, without the formation of any medium-range order or mesophases. The nearest surrounding of each molecule evolves structurally in time due to the ongoing fast conformational changes. We identify several conformers of MeBzS2O, demonstrating that its lowest-energy conformation is preferred mainly at lower temperatures, i.e., in the supercooled liquid state. Its increased prevalence modifies locally the short-range intermolecular order and promotes vitrification. Consequently, we indicate that the Arrhenius transition is fuelled rather by conformational changes in this glass-forming macrocyclic crown thiaether, which is a different scenario from the so-far existing concepts. Our studies combine broadband dielectric spectroscopy (BDS), X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, molecular dynamics (MD) simulations, and density functional theory (DFT) calculations.

A Systematic Study of the Temperature Dependence of the Dielectric Function of GaSe Uniaxial Crystals from 27 to 300 K

We report the temperature dependences of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of the uniaxial crystal GaSe in the spectral energy region from 0.74 to 6.42 eV and at temperatures from 27 to 300 K using spectroscopic ellipsometry. The fundamental bandgap and strong exciton effect near 2.1 eV are detected only in the c-direction, which is perpendicular to the cleavage plane of the crystal. The temperature dependences of the CP energies were determined by fitting the data to the phenomenological expression that incorporates the Bose–Einstein statistical factor and the temperature coefficient to describe the electron–phonon interaction. To determine the origin of this anisotropy, we perform first-principles calculations using the mBJ method for bandgap correction. The results clearly demonstrate that the anisotropic dielectric characteristics can be directly attributed to the inherent anisotropy of p orbitals. More specifically, this prominent excitonic feature and fundamental bandgap are derived from the band-to-band transition between s and pz orbitals at the Γ-point.

Field-Induced Slow Magnetization Relaxation of a Tetrahedral S=2 FeIIS4-Containing Complex.

In the work described herein, the spin relaxation properties of the mononuclear tetrahedral S = 2 [Fe{(SPiPr2)2N}2] complex (1) were studied by employing static and dynamic magnetic measurements al liquid helium temperatures. In the absence of an external direct current (DC) magnetic field, 1 exhibits fast magnetization relaxation. However, in the presence of external magnetic fields of a few kOe, slow relaxation is induced as monitored by alternating current (AC) magnetic susceptibility measurements up to 10 kHz, in the temperature range 2-5 K. Analysis of the temperature dependence of the corresponding relaxation time reveals contributions by Quantum Tunnelling of Magnetization, and the Direct and Orbach processes in the magnetization relaxation mechanism of 1. The energy barrier, Ueff, of the Orbach process, as determined by this analysis, is compared with that related to the zero field splitting parameters of 1 which were previously determined by high- frequency and -field electron paramagnetic resonance and Mössbauer spectroscopies.

Numerical Simulation and Modeling of Mechano–Electro–Thermal Behavior of Electrical Contact Using COMSOL Multiphysics

Electrical contacts are important circuit components with diverse industrial applications, and their failure can lead to multiple unwanted effects. Hence, the behavior of electrical contacts is a widely studied topic in the scientific literature based on various approaches, tools, and techniques. The present study proposes a new approach to numerical modeling and simulation based on the Holm contact theory, aiming to study the dependence between the electric potential and the temperature within an electrical contact. Structured in five sections, the research was conducted using COMSOL Multiphysics software and its solid-state mechanics, electric current, and heat transfer modules in order to highlight contact behavior from mechanical, electrical and thermal points of view: the von Mises stress, contact force, electric field amplitude, variation of the electrical potential along the current path, temperature gradient, and dependence of temperature along the contact elements edges were obtained by simulation, and are graphically represented. The results show that the temperature increase follows a parabolic curve, and that for values higher than 4 mV of voltage drop, the temperature of the contact increases to 79.25 degrees (and up to 123.81 degrees for 5 mV) over the ambient temperature, thus the integrity of insulation can be compromised. These values are close (10–12%) to the analytically calculated ones, and also in line with research assessed in the literature review.

Investigation of cyclopentene + OH and cyclopentene thermal decomposition reactions

This study presents the first high-temperature measurements of cyclopentene+OH→k1Products reaction over 856 – 1258 K and 1.03 – 4.33 bar. The determined rate coefficients of k1 exhibited Arrhenius temperature dependence with an activation energy ∼ 3.3 kcal mol−1 and negligible pressure dependence. Rate coefficients of OH + cyclopentene are faster than OH + 1-pentene but comparable to OH + 2-pentene, highlighting the significance of allylic CH bonds in these reactions. At 1258 K, our rate coefficient is ∼ 30 % slower than the average room-temperature measurement, indicating the role of OH-addition pathways at low temperatures. Site-specific rate coefficients and branching ratios are determined, with H-abstraction at the allylic CH site accounting for ∼68 % of the reaction and alkylic CH bond contributing ∼22 %. Our measured k1 may be given as (unit: cm3molecule−1s−1):k1=1.64×10−10e(−1660T)Cyclopentene decomposition reaction (cyclopentene→k2cyclopentadiene+H2) is studied over 1186–1472 K and 1.17 – 1.38 bar. Time-resolved yields of the product, cyclopentadiene, are monitored using a sensitive UV laser diagnostic near 220 nm. Absorption cross-sections of cyclopentadiene, measured in two separate mixtures, showed weak positive temperature dependence (8.7 – 9.8 × 10−18 cm2molecule−1) over 961 – 1326 K. Our rate coefficients of k2 exhibited a positive Arrhenius temperature dependence with an activation energy of ∼ 54.7 kcal mol−1. At 1300 K, the decomposition of cyclopentene proceeds 5.5 and 28 times faster than that of cyclopentadiene and cyclopentane, respectively. Our measured k2 may be expressed as (unit: s−1):k2=2.55×1012e(−27,527.6T)The pentagonal structure of cyclopentene influences its H-abstraction and decomposition reactions distinctively. While H-abstraction by OH follows a mechanism akin to cyclohexene and linear alkenes, with comparable rate coefficients at allylic CH bonds, the penta-ring structure significantly impacts the decomposition mechanism. Cyclopentene decomposition predominantly produces cyclopentadiene and H2 in a ring-conserving manner, differing from the cleavage of allylic-alkylic CC bonds in the decompositions of 1-alkenes and cyclohexene.

Thermal and Entropic analyses of free convection of nanofluid in a partially heterogeneous porous chamber using the two-phase mixture model

Entropy generation and convection heat transfer in a partially porous chamber with different side wall temperatures using CuO–H2O have been investigated. The importance of this issue is wide application of the results in solar collectors, thermal extrusion systems, heat exchangers, bio-medicine, nuclear waste disposal, etc. The innovation of the present work is related to the investigation of fluid and heat fields and entropy generation by using a matrix with subordination of porosity to the vertical axis and permeability, thermal conductivity, and viscosity with subordination of porosity. To obtain accurate results, the two-phase mixture model was used, and thermal conductivity and viscosity of nanofluid were simulated by experimental models by temperature and volume fraction dependence. Governing equations are solved by the FVM. The main findings indicate that the best and worst optimization factor will occur in the porous matrix ε = ε(y2) and ε = -ε(y2), respectively, which is 113 % and 86 % of NH of the homogeneous matrix, respectively. Also increasing the filling of the cavity, highly improves NH, so that the NH will reach from 1.19 to 1.82 with the increase of S from 0.25 to 1.

Kinetic Properties and Pharmacological Modulation of High- and Low-Affinity Dopamine Transport in Striatal Astrocytes of Adult Rats

Astrocytes actively participate in neurotransmitter homeostasis by bidirectional communication with neuronal cells, a concept named the tripartite synapse, yet their role in dopamine (DA) homeostasis remains understudied. In the present study, we investigated the kinetic and molecular mechanisms of DA transport in cultured striatal astrocytes of adult rats. Kinetic uptake experiments were performed using radiolabeled [3H]-DA, whereas mRNA expression of the dopamine, norepinephrine, organic cation and plasma membrane monoamine transporters (DAT, NET, OCTs and PMAT) and DA receptors D1 and D2 was determined by qPCR. Additionally, astrocyte cultures were subjected to a 24 h treatment with the DA receptor agonist apomorphine, the DA receptor antagonist haloperidol and the DA precursor L-DOPA. [3H]-DA uptake exhibited temperature, concentration and sodium dependence, with potent inhibition by desipramine, nortriptyline and decynium-22, suggesting the involvement of multiple transporters. qPCR revealed prominent mRNA expression of the NET, the PMAT and OCT1, alongside lower levels of mRNA for OCT2, OCT3 and the DAT. Notably, apomorphine significantly altered NET, PMAT and D1 mRNA expression, while haloperidol and L-DOPA had a modest impact. Our findings demonstrate that striatal astrocytes aid in DA clearance by multiple transporters, which are influenced by dopaminergic drugs. Our study enhances the understanding of regional DA uptake, paving the way for targeted therapeutic interventions in dopaminergic disorders.