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A <scp>DFT</scp> calculation of electronic structures, magnetic, and thermoelectric properties of the new equiatomic quaternary Heusler alloy <scp>RuTiCrSi</scp>

AbstractThe stabilities, mechanical, electronic, and magnetic properties of the new equiatomic quaternary Heusler alloy (EQHA) RuTiCrSi were investigated using the Kohn‐Sham DFT (KS‐DFT) calculations within the generalized gradient approach (GGA), the modified version of the exchange potential introduced by Becke and Johnson in addition to the GGA (mBJ‐GGA), and Heyd‐Scuseria‐Ernzerhof (HSE06) hybrid functional. The ground‐state equilibrium energy reveals that the ferromagnetic with type 2 structure is the more stable. The RuTiCrSi is energetically, mechanically, and dynamically stable. The calculated self‐consistent total magnetic moment is 2 μB and agrees well with the Slater‐Pauling rule of . The electronic structure results from mBJ‐GGA and HSE06 functionals show a half‐metallic behavior. A high Curie temperature is obtained using the mean‐field approximation. The thermoelectric response was calculated using the semi‐classical Boltzmann transport equation under constant relaxation time. The maximum value of Seebeck coefficient is observed at the ambient temperature of . It was also observed that the power factor increases significantly as temperature rises. Therefore, the new EQHA RuTiCrSi seems to be a potential candidate for spintronic thermoelectric applications.

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<scp>DFT</scp> study of the half‐metallic variant perovskites <scp>A<sub>2</sub>OsX<sub>6</sub> (A = Rb/Cs; X = Cl/Br)</scp> for spintronic and thermoelectric applications

AbstractWe present our results of the spin‐polarized calculations on the structural, magneto‐electronic, thermodynamic, and thermoelectric properties of vacancy‐ordered double perovskites A2OsX6 (A = Rb/Cs; X = Cl/Br). We utilized the Wu‐Cohen generalized gradient approximation (Wu‐GGA) and the mBJ scheme to determine a more reliable electronic structure. The compounds exhibit negative formation energy, suitable tolerance factor, and a stable phonon spectrum, indicating their stability. The compounds show half‐metallicity, acting as semiconductors with direct band gaps between 2 and 3 eV in the spin‐up orientation while metallic in the spin‐down. Each compound shows a total spin magnetic moment of 2.00 μB per formula unit, with Os‐t2g states contributing the most (~1.5 μB). The computed thermoelectric coefficient indicates the usability of these compounds across a wide temperature range (200–800 K) with high electrical conductivity and low electronic thermal conductivity. The compounds exhibit high Seebeck coefficient and figure of merit (ZT), making them suitable for thermoelectric applications. With ferromagnetic and half‐metallic characteristics, these compounds could be promising candidates for spintronics, thermoelectronic, and data storage applications.

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A computational investigation on the photochemistry of the popular spin‐trap agent <i>N</i>‐tert‐butyl‐α‐phenylnitrone (<scp>PBN</scp>) and thermal isomerization pathways of its photoproduct oxaziridine

AbstractComputational investigation on the low‐lying photo‐excited states of N‐tert‐butyl‐α‐phenylnitrone (PBN), a well‐known spin‐trap agent, has revealed its photo‐product (oxaziridine) formation channel. The S0‐S2 vertical excitation in PBN is subsequently followed by a non‐radiative decay pathway through S2/S1 and S0/S1 conical intersections (CIs) with CNO‐kinked structures, situated around 23 kcal/mol and 45 kcal/mol below the vertically excited S2 state, respectively. The reverse photo‐process of PBN formation involves photo‐excitation of oxaziridine to its S2 and S3 photo‐excited states. The forward photo‐isomerization leads to the trans‐oxaziridine with a backside CNO kink (trans‐OXB) while the reverse path studied by us, connects its front‐side CNO‐kinked analogue (trans‐OXF) with the PBN. Our search for the reverse thermal reaction paths from these two oxazirdines has led to their corresponding transition states, one at 35 kcal/mol and the other at 27 kcal/mol above trans‐OXF and trans‐OXB geometries, respectively. They lead to two different isomers (E and Z) of PBN which supports the reported nature of products from the trans‐oxaziridine in this thermal reaction. The inversion path of the chiral nitrogen atom of this N‐tert‐butyl‐oxaziridine (barrier 21 kcal/mol) has also been tracked. This reaction path has been compared with that of the N‐methyl (barrier 30 kcal/mol) and N‐acyl (barrier 10.5 kcal/mol) oxaziridine analogues.

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First‐principles calculations to investigate structural, electronic, optical, and transport properties of half‐Heusler <scp>VFeZ</scp> (Z = N and P) compounds

AbstractThis research work investigates the structural, electronic, optical, and thermoelectric characteristics of VFeZ (Z = N and P) half‐Heusler compounds. The study employs the full‐potential linearized augmented plane wave (FP‐LAPW) method integrated into the WIEN2K algorithm, serving as the underpinning framework for density functional theory (DFT) analysis. In the study, we use the PBE generalized gradient approximation (PBE‐GGA) to identify numerous parameters associated with structural and elastic properties. Lattice parameter results are in agreement with previous outcomes. Moreover, computed elastic parameters satisfy the criterion for stability. In the cubic structure VFeZ (Z = N and P) is ductile, to enhance the computations of electronic characteristics, Tran and Blaha's modified Becke‐Johnson potential (TB‐mBJ) is used. Our simulations demonstrate that the materials exhibit semiconductor behavior, with a direct band gap for VFeZ (Z = N and P). Strong UV absorption is found via optical experiments suggest compounds are suitable for optical application. Furthermore, study of the thermoelectric properties suggests its application in the thermoelectric generators.

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