xCdxTe Crystals Research Articles

Tellurium precipitate influence on the electron hall mobility in Hg1–xCdxTe (x ≈ 0.2) crystals

physica status solidi (a)Volume 92, Issue 1 p. K81-K85 Short Note Tellurium precipitate influence on the electron hall mobility in Hg1–xCdxTe (x ≈ 0.2) crystals Yu. G. Arapov, Yu. G. Arapov Institute of Metal Physics, Academy of Sciences of the USSR, Ural Scientific Centre, Sverdlovsk Search for more papers by this authorA. B. Davydov, A. B. Davydov Institute of Metal Physics, Academy of Sciences of the USSR, Ural Scientific Centre, Sverdlovsk Search for more papers by this authorM. L. Zvereva, M. L. Zvereva Institute of Metal Physics, Academy of Sciences of the USSR, Ural Scientific Centre, Sverdlovsk Search for more papers by this author Yu. G. Arapov, Yu. G. Arapov Institute of Metal Physics, Academy of Sciences of the USSR, Ural Scientific Centre, Sverdlovsk Search for more papers by this authorA. B. Davydov, A. B. Davydov Institute of Metal Physics, Academy of Sciences of the USSR, Ural Scientific Centre, Sverdlovsk Search for more papers by this authorM. L. Zvereva, M. L. Zvereva Institute of Metal Physics, Academy of Sciences of the USSR, Ural Scientific Centre, Sverdlovsk Search for more papers by this author First published: 16 November 1985 https://doi.org/10.1002/pssa.2210920155 18 Kovalevskii Str., Sverdlovsk GSP-70, USSR. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Volume92, Issue116 November 1985Pages K81-K85 RelatedInformation

Radiation defect annealing of electron irradiated Hg1−xCdxTe crystals under various thermal treatments

The peculiarities of parameter variations under various thermal treatments of electron irradiated (2.2 MeV, 1 to 5 × 1017 cm−2, 300 K) narrow-gap semiconductor Hg1−xCdxTe (x = 0.2) samples of p- and n-type conductivity are studied. The “reverse” annealing, non-complete recovery of initial parameters, the abnormal temperature dependence of Hall coefficient, and the influence of low-temperature quenching are investigated for samples with small rates of carrier introduc-tion. The results obtained are interpreted by dislocations and their impurity-defect environment influence on the cluster formation process under electron irradiation and subsequent thermal annealing. [Russian Text Ignored].

Growth of large diameter (Hg,Cd)Te crystals by incremental quenching

The growth of large (20 mm diam by 50 mm length) Hg1−xCdxTe crystals by incremental quenching of large volume Hg1−xCdxTe alloy melts was demonstrated. This method is based on the sequential freezing of shallow melts that have large surface to volume ratios onto a large diameter growing ingot. The resulting homogeneous polycrystalline ingots were annealed at 665 °C to promote grain growth. Grain sizes ranging from 25 to 35 mm were obtained after annealing at 665 °C for 28 days. In addition, the crystals showed very little substructure and had dislocation densities of 1.25±0.6×105 cm−2. Hall effect measurements on wafers annealed at temperatures below 300 °C show an n-type behavior with carrier concentrations ranging from 3.3×1014 to 4.8×1014 cm−3 and majority carrier mobilities ranging from 1.69×105 to 2.29×105 cm2/V s at 77 K for a composition x=0.225. The compositional variation Δx in the radial and axial direction was measured by several techniques and was found to range from 0.005 to 0.01.

On the Anomalies in the Temperature Dependence of Conductivity in Hg1−xCdxTe

AbstractThe temperature (1.8 K ≦ T ≦ 77 K) and magnetic field (0 ≦ H ≦ 22 kOe) dependence of the conductivity σ, longitudinal magnetoconductivity σzz, and of the Hall coefficient R for gapless Hg1−xCdxTe crystals are measured. At temperatures Tmin = 6 to 11 K there occur deep minima of conductivity σ(T). It is shown that the origin of these minima cannot be accounted for by the resonance scattering of electrons by acceptors. The minima in σ(T) arise from the decrease in electron mobility caused by the increase of the number of charged centres with increasing temperature when T < Tmin and by the increase of the concentration of electron‐hole pairs when T > > Tmin. The anomalies in the conductivity (plateau) and the Hall effect (double inversion of sign) observed in the temperature range 20 K < T < 40 K are due to the contribution of three types of carriers, viz. light conduction band electrons, heavy acceptor band electrons, and valence band holes.

Electrical and far-infrared optical properties of p-type Hg1−xCdxTe

Electrical transport measurements have been made on p-type Hg1−xCdxTe with carrier concentrations ranging from 4×1015 to 1×1017 cm−3 and with x in the range 0.26–0.6. The acceptor ionization energy was determined to be about 14 meV by measurement of carrier freeze out in Hg0.6Cd0.4Te. Far-infrared photoconductivity and transmittance measurements in Hg0.6Cd0.4Te were used to verify this ionization energy of the acceptor. Calculations of both the ionized-impurity-scattering-limited mobility and the Hall coefficient as functions of temperature indicate that the p-type Hg1−xCdxTe crystals are compensated.