Waveguide Circuits Research Articles

Optimized domain-engineered lithium niobate for electro-optic spectral tuning in a multi-wavelength optical parametric oscillator

We report on an electro-optically (EO) spectrum tunable, multiline optical parametric oscillator (OPO) based on a nonperiodically poled lithium niobate (NPPLN). Besides being an efficient optical parametric down converter (OPDC) for multi-wavelength signal generation, the NPPLN can function as an EO modulator for fast spectral tuning based on a unique asymmetric-duty-cycle (ADC) equivalent domain structure. We have developed a genetic algorithm to construct and optimize such an ADC equivalent domain configuration in NPPLN to maximize its EO spectral tuning rate with the least compromise of its nonlinear gain for conducting the multiple down-conversions. When the novel EO NPPLN device with an equivalent ADC of 29%/71% works in an OPO intracavity pumped by a diode-pumped, 1064-nm Nd:YVO4 laser, we measured EO tuning rates of ∼0.5 and ∼0.53 nm/(kV/mm) for the down-converted dual signals at 1540 and 1550 nm, respectively. The tuning rates have been three orders of magnitude higher than a conventional one without an engineered domain asymmetry and 12% greater than another domain asymmetric LN device designed by a simulated annealing optimization method. The EO tuning technology developed in this study can be potentially implemented in micro/nano-photonic LN waveguide circuits.

Free-standing millimeter-range 3D waveguides for on-chip optical interconnects

Next-generation energy-efficient photonic integrated systems, such as neuromorphic computational chips require efficient heterogeneous integration of ultracompact light sources and photodetectors through highly dense waveguide circuits. However, interconnecting these devices in emitter-receiver communication circuits remains a challenge and an obstacle towards upscaling heterogeneous photonic chips. Here we report on versatile air-cladded free-standing 3D polymer waveguides (OrmoCore, n≈1.5) spanning up to 900 µm in length without intermediate mechanical support structures, microprinted via two-photon polymerization. The presented waveguides are suitable for on-chip out-of-plane light coupling as well as non-connected 3D crossings, needed for high density optical circuits. The waveguides show optical transmission losses of 1.93 dB mm−1 at λ = 635 nm, and of 3.71 dB mm−1 at λ = 830 nm in the wavelength range of GaAs-based microLEDs spectral emission. On-chip imaging for high-precision alignment and TPP microfabrication are performed seamlessly by utilizing the same laser source for both steps, allowing accurate 3D printing on microstructured substrates. As proof of concept, we interconnect two GaAs-based microLEDs via an on-chip microprinted 3D waveguide. Such combined systems can serve as building blocks of future complex integrated heterogeneous photonic networks.

Precise mode control of laser-written waveguides for broadband, low-dispersion 3D integrated optics

Three-dimensional (3D) glass chips are promising waveguide platforms for building hybrid 3D photonic circuits due to their 3D topological capabilities, large transparent windows, and low coupling dispersion. At present, the key challenge in scaling down a benchtop optical system to a glass chip is the lack of precise methods for controlling the mode field and optical coupling of 3D waveguide circuits. Here, we propose an overlap-controlled multi-scan (OCMS) method based on laser-direct lithography that allows customizing the refractive index profile of 3D waveguides with high spatial precision in a variety of glasses. On the basis of this method, we achieve variable mode-field distribution, robust and broadband coupling, and thereby demonstrate dispersionless LP21-mode conversion of supercontinuum pulses with the largest deviation of <0.1 dB in coupling ratios on 210 nm broadband. This approach provides a route to achieve ultra-broadband and low-dispersion coupling in 3D photonic circuits, with overwhelming advantages over conventional planar waveguide-optic platforms for on-chip transmission and manipulation of ultrashort laser pulses and broadband supercontinuum.

Development of hybrid photonic integrated wavelength-tunable laser at 2 µm and its application to FMCW LiDAR.

This paper reports on the experimental demonstration of a fully integrated frequency-modulated continuous-wave (FMCW) LiDAR sensing system, operating at 2.0 µm. It makes use of a widely tunable hybrid external cavity laser based on the combination of GaSb gain chip and silicon waveguide circuits. The single-frequency laser operation over the full spectral bandwidth of the gain chip is secured using a frequency-selective filter, consisting of two sequential microring resonators in a Vernier configuration. To increase the mode-hop free wavelength tuning range while preserving the linewidth of the laser, the heater of the phase section placed along the bus waveguide is synchronously controlled with two independent heaters placed on each microring resonator. This laser is then implemented for the development of an FMCW LiDAR, consisting of all-optical fiber-based two independent unbalanced Mach-Zehnder interferometers: k-space interferometer for the linearization of continuously swept laser frequency and main interferometer for the measurement of the distributed back-reflection over the distance. The optical frequency of the laser is continuously swept over a ∼100 GHz range (or Δλ=1.47 nm at the operating wavelength) at a modulation speed of 100 Hz. Using this wavelength tunable laser, a light detection and ranging system (LiDAR) is experimentally demonstrated, showing a very high axial resolution of 1.36 mm in air with an extremely high precision of ∼9 µm at a 100 Hz measurement rate.

Laser Printing of Large‐Area Conformal 3D photonic Circuits in Glass

AbstractPhotonic integrated circuits (PICs) are iterating on electronic ones to enable higher‐speed parallel computing while meeting the growing demands for energy efficiency in big‐data processing. However, manufacturing multi‐layered and 3D PICs remains challenging based on conventional planar lithography. Here, a rapid prototyping technique is delineated to configure large‐area and 3D PIC in glass based on laser‐direct written optical waveguides by employing femtosecond cylindrically polarized vortex laser beams. The vortex laser beam is mathematically rotationally invariant and capable of conformally transforming waveguide cross‐sections at arbitrary bending angles of 0–90° and across a large depth change. Based on this approach, a one‐layer 12‐core waveguide circuit with a variable cross‐section (diameter 5–11.5 µm) while maintaining a high mode ellipticity &gt;0.974, as well as a more complex three‐layer 36‐core connector in which the waveguide dives continuously from 50 µm to 550 µm with a small loss difference of &lt;0.1 dB is demonstrated. This work offers a pathway for 3D imprinting of large‐area photonic circuits in glass and other transparent materials, which has potential applications in high‐efficiency photonic computing, multidimensional quantum networks, and 3D optics topology.

Femtosecond electron beam probe of ultrafast electronics

The need for ever-faster information processing requires exceptionally small devices that operate at frequencies approaching the terahertz and petahertz regimes. For the diagnostics of such devices, researchers need a spatiotemporal tool that surpasses the device under test in speed and spatial resolution. Consequently, such a tool cannot be provided by electronics itself. Here we show how ultrafast electron beam probe with terahertz-compressed electron pulses can directly sense local electro-magnetic fields in electronic devices with femtosecond, micrometre and millivolt resolution under normal operation conditions. We analyse the dynamical response of a coplanar waveguide circuit and reveal the impulse response, signal reflections, attenuation and waveguide dispersion directly in the time domain. The demonstrated measurement bandwidth reaches 10 THz and the sensitivity to electric potentials is tens of millivolts or −20 dBm. Femtosecond time resolution and the capability to directly integrate our technique into existing electron-beam inspection devices in semiconductor industry makes our femtosecond electron beam probe a promising tool for research and development of next-generation electronics at unprecedented speed and size.

Multifunction integrated lithium niobate photonic chip for photon pairs generation and manipulation.

We report on a unique photonic quantum source chip highly integrating four-stage photonic elements in a lithium niobate (LN) waveguide circuit platform, where an aperiodically poled LN (APPLN) electro-optic (EO) polarization mode converter (PMC) is sandwiched between two identical type-0 PPLN spontaneous parametric down-converters (SPDCs), followed by an EO phase controller (PC). These core nonlinear optic and EO building blocks on the chip are systematically characterized stage by stage to show its high performance as an integrated quantum source. The APPLN EO PMC, optimally constructed by a genetic algorithm, is characterized to have a broad bandwidth (>13 nm), benefiting an efficient control of broadband type-0 SPDC photon pairs featuring a short correlation time. We demonstrate an efficient conversion of the |VV› photon-pair state generated from the first PPLN SPDC stage to the |HH› state through the APPLN EO PMC stage over its operating bandwidth, a broadband or broadly tunable polarization-entangled state can thus be possibly produced via the superposition of the |VV› state generated from the other PPLN SPDC on the third stage of the chip. Such a state can be further manipulated into two of the Bell states if the relative phases between the two polarization states can be properly modulated through the EO PC on the fourth stage of the chip. Such a multifunction integrated quantum photonic source chip can be of high value to developing a compact, efficient, and high-speed quantum information processor.

Optical wavefront phase-tilt measurement using Si-photonic waveguide grating couplers.

Silicon photonic wavefront phase-tilt sensors for wavefront monitoring using surface coupling grating arrays are demonstrated. The first design employs the intrinsic angle dependence of the grating coupling efficiency to determine local wavefront tilt, with a measured sensitivity of 7 dB/°. The second design connects four gratings in an interferometric waveguide circuit to determine incident wavefront phase variation across the sensor area. In this device, one fringe spacing corresponds to 2° wavefront tilt change. These sensor elements sample a wavefront incident on the chip surface without the use of bulk optic elements, fiber arrays, or imaging arrays. Both sensor elements are less than 60 µm across and are potential unit cell sensor elements for large arrays that monitor wavefront shape across an image or pupil plane in adaptive optics systems for free-space optical communications, astronomy, and beam pointing applications.

Pure-quartic Bragg solitons in chip-scale nonlinear integrated circuits

Pure-quartic solitons have gained significant attention recently due to their ability to achieve higher energy than classical solitons for short pulse durations, leveraging the interaction between self-phase modulation and anomalous fourth-order dispersion. However, challenges in generating the required dispersion profile and the scarcity of sufficiently low-loss devices with high nonlinearity and negligible nonlinear loss have restricted experimental progress. In this paper, we report a class of pure-quartic Bragg solitons that balances self-phase modulation and the ultra-strong Bragg-grating-induced negative fourth-order dispersion in combination with negligible group velocity dispersion and negligible third-order dispersion. We demonstrate pure-quartic Bragg soliton-effect compression of 2.4× in a compact millimeter-scale integrated low-loss and highly nonlinear waveguide circuit. Our findings show the potential of exploiting the exceptional dispersion profile of nonlinear Bragg gratings for advanced soliton generation and pulse shaping, particularly the advantageous energy scaling and associated compression of pure-quartic solitons.

Light-guiding-light-based temporal integration of broadband terahertz pulses in air

The next generation of all-optical computation platforms prefers the light-guiding-light (LGL) scheme inside a medium that envisions circuitry-free and rapidly reconfigurable systems powered by dynamic interactions between light beams. Currently, suitable LGL materials and corresponding mechanisms are in urgent need. In this work, we proposed ubiquitous air as a restorable LGL signal manipulation medium with transient air-plasma waveguide circuits. Briefly, by focusing femtosecond laser beams in free space, the created atmospheric plasma filament array via photoionization was able to guide terahertz (THz) pulses along its epsilon-near-zero zone with a 1/f-profile spectral response. Consequently, this achieved a time-domain integration of the THz pulse in broad bandwidth. When the pumping laser was sequentially turned off and on, this air-plasma multi-filament structure was erased and rebuilt within nano- and femto-seconds, respectively, allowing rapid and repeated rearrangements of the all-optical stage. Furthermore, this air-based LGL information processing approach is promising to pave the way toward all-optical calculations during free-space directional transmission of THz waves, in which way the delivered THz signal can be remotely controlled.

On-Chip Integration of Orthogonal Subsystems Enabled by Broadband Twist at 220–325 GHz

In this article, we report for the first time on a low-loss compact platform that enables the integration of H-and E-plane rectangular waveguide subsystems enabled by 90 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{\circ}$</tex-math> </inline-formula> polarization rotation of rectangular waveguide sections on a silicon-micromachined chip. The proposed platform offers unprecedented design flexibility for a 2.5D fabrication technology such as silicon micromachining, since orthogonal waveguide device sections with full design freedom in H-plane geometries can be cofabricated with sections with full design freedom in E-plane geometries, enabled by novel, integrated waveguide twists optimized for 2.5D fabrication. The platform is developed for use in broadband millimeter-and submillimeter-wave waveguide circuits and prototypes are implemented in the 220–325-GHz band. A prototype chip demonstrating the platform, implemented by bonding three stacked silicon chips, is fabricated. The measured results of the twist prototype exhibit a very low insertion loss of less than 0.2 dB and a return loss of 20 dB or better in most of the 220–325-GHz band. An integrated eighth-degree lowpass waveguide filter with axial ports having a cut-off frequency of 280 GHz is codesigned with the twist transition and fabricated on the platform to demonstrate its application. The filter shows 0.4-dB measured insertion loss and has a measured return loss in the passband of better than 14 dB.

Simulation Study on a Planar Quasi-Optical Waveguide Circuit for a W-Band Gyro-TWT With Stability Improvement

In this article, a planar quasi-optical waveguide (PQOW) circuit is proposed for vacuum electron devices (VEDs) for the first time. The circuit is made of a series of metamaterial pillars attached to a pair of parallel plates for phase compensation. It can propagate quasi-optical modes as a pair of concave mirrors does, while the lower order HE <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{0}\textit{n}}$</tex-math> </inline-formula> modes experience much heavier circuit loss compared to that of convention confocal waveguide circuits, which can improve the backward oscillation (BWO) stability of gyro-amplifiers. As an example, a W-band gyro-amplifier with PQOW circuits to replace conventional confocal circuits is designed. The 3-D particle-in-cell simulation demonstrated that the circuit is capable of producing stable high-power radiation within 96–108 GHz, with an electron efficiency of about 15% over the entire bandwidth.

Ka-Band Low-Voltage Multiple-Beam Mini-TWT

We describe the design, development, and initial testing of a very compact, multiple-beam folded-waveguide traveling wave tube (TWT) operating in <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Ka</i> -band at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim$</tex-math> </inline-formula> 6 kV. A proof-of-principle four-beam, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim$</tex-math> </inline-formula> 100 mA/beam device has been fabricated and tested, and a 16-beam version of the device has been designed and is predicted to produce an output power up to 1 kW. Here, we describe the design approach we devised and implemented to overcome two fundamental challenges: 1) generating and transporting the tightly spaced beams required to operate in the millimeter-wave regime and 2) developing folded waveguide circuits that can provide high interaction impedance for each of the beams as well as stable operation in a dense high-order-mode environment.

Very-large-scale integrated quantum graph photonics

Graphs have provided an expressive mathematical tool to model quantum-mechanical devices and systems. In particular, it has been recently discovered that graph theory can be used to describe and design quantum components, devices, setups and systems, based on the two-dimensional lattice of parametric nonlinear optical crystals and linear optical circuits, different to the standard quantum photonic framework. Realizing such graph-theoretical quantum photonic hardware, however, remains extremely challenging experimentally using conventional technologies. Here we demonstrate a graph-theoretical programmable quantum photonic device in very-large-scale integrated nanophotonic circuits. The device monolithically integrates about 2,500 components, constructing a synthetic lattice of nonlinear photon-pair waveguide sources and linear optical waveguide circuits, and it is fabricated on an eight-inch silicon-on-insulator wafer by complementary metal–oxide–semiconductor processes. We reconfigure the quantum device to realize and process complex-weighted graphs with different topologies and to implement different tasks associated with the perfect matching property of graphs. As two non-trivial examples, we show the generation of genuine multipartite multidimensional quantum entanglement with different entanglement structures, and the measurement of probability distributions proportional to the modulus-squared hafnian (permanent) of the graph’s adjacency matrices. This work realizes a prototype of graph-theoretical quantum photonic devices manufactured by very-large-scale integration technologies, featuring arbitrary programmability, high architectural modularity and massive manufacturing scalability.

Heterogeneous integration of III–V semiconductor lasers on thin-film lithium niobite platform by wafer bonding

Thin-film lithium niobate (TFLN) photonic integrated circuits (PICs) have emerged as a promising integrated photonics platform for the optical communication, microwave photonics, and sensing applications. In recent years, rapid progress has been made on the development of low-loss TFLN waveguides, high-speed modulators, and various passive components. However, the integration of laser sources on the TFLN photonics platform is still one of the main hurdles in the path toward fully integrated TFLN PICs. Here, we present the heterogeneous integration of InP-based semiconductor lasers on a TFLN PIC. The III–V epitaxial layer stack is adhesively bonded to a TFLN waveguide circuit. In the laser device, the light is coupled from the III–V gain section to the TFLN waveguide via a multi-section spot size converter. A waveguide-coupled output power above 1 mW is achieved for the device operating at room temperature. This heterogeneous integration approach can also be used to realize on-chip photodetectors based on the same epitaxial layer stack and the same process flow, thereby enabling large-volume, low-cost manufacturing of fully integrated III–V-on-lithium niobate systems for next-generation high-capacity communication applications.

High‐Performance Electro‐Optic Modulator on Silicon Nitride Platform with Heterogeneous Integration of Lithium Niobate

AbstractSilicon nitride (SiN) emerges as an important platform for ultralow loss photonic integrations with complementary metal‐oxide‐semiconductor compatibility. However, active devices, such as modulators, are difficult to realize on pure SiN due to the lack of any electro‐optic (EO) properties of the material. Here, an SiN and lithium niobate (LN) heterogenous integration platform supporting high‐performance EO modulators on SiN waveguide circuits is introduced. An efficient evanescent coupling structure is realized for low‐loss light transitions between the SiN waveguide and the LN ridge waveguide with a measured mode transition loss of only 0.4 dB. Based on this heterogeneous platform, an EO Mach–Zender interference modulator on SiN is built with unprecedented loss, efficiency, and bandwidth performances. A half‐wave voltage of 4.3 V with a modulation bandwidth of 37 GHz and an overall insertion loss of 1 dB is measured for a 7‐mm long device. Data transmission up to 128 Gb s−1 with a bit‐error‐rate of &lt;2.4 × 10‐4 is also demonstrated.

An Integrated Optical Circuit Architecture for Inverse-Designed Silicon Photonic Components.

In this work, we demonstrate a compact toolkit of inverse-designed, topologically optimized silicon photonic devices that are arranged in a "plug-and-play" fashion to realize many different photonic integrated circuits, both passive and active, each with a small footprint. The silicon-on-insulator 1550-nm toolkit contains a 2 × 2 3-dB splitter/combiner, a 2 × 2 waveguide crossover, and a 2 × 2 all-forward add-drop resonator. The resonator can become a 2 × 2 electro-optical crossbar switch by means of the thermo-optical effect, phase-change cladding, or free-carrier injection. For each of the ten circuits demonstrated in this work, the toolkit of photonic devices enables the compact circuit to achieve low insertion loss and low crosstalk. By adopting the sophisticated inverse-design approach, the design structure, shape, and sizing of each individual device can be made more flexible to better suit the architecture of the greater circuit. For a compact architecture, we present a unified, parallel waveguide circuit framework into which the devices are designed to fit seamlessly, thus enabling low-complexity circuit design.

Nanoimprinting for all-polymer electro-optic waveguide devices

We performed the design and fabrication of polymer waveguide circuits, aiming for applications as electro-optic devices. Uniform waveguides with over one centimeter of length were fabricated by soft nanoimprint lithography. These multimode waveguides present a height of 3 µm and low surface roughness (2 nm), with a thin residual layer of 600 nm. Propagation losses at 1550 nm are estimated to be around 7 dB/cm.

Integration of Edge-Emitting Quantum Dot Lasers with Different Waveguide Platforms using Micro-Transfer Printing

O-band InAs/GaAs Quantum Dot edge-emitting lasers are integrated onto a number of waveguiding platforms using micro-transfer printing. These are deep recesses in 220 nm Si, 3 µm Si and 300 nm SiN waveguide circuits. The processing technology to achieve release and high-yield accurate transfer of laser coupons up to 2.4 mm long and < 5 µm thick onto the target substrates is described. At 85 mA, waveguide coupled powers of 1.0 mW and 0.95 mW are measured after out-coupling from the 220 nm SOI and 300 nm SiN waveguides, respectively while 1.7 mW total power was measured from the 3 µm SOI waveguide.

110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator

High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a V_pi L product of 3.1 V.cm and an on-chip optical insertion loss of 1.8 dB.