Voltage Gain Research Articles

A novel non-isolated step-up/step-down DC-DC converter with wide voltage gain

ABSTRACT In this paper, a novel non-isolated step-up/step-down DC-DC converter with wide voltage gain is proposed. The operating principle, steady-state analysis in continuous conduction mode (CCM), small-signal model, and power losses of the proposed converter are described, built, and analysed in detail. The comparison including voltage gain, voltage and current stress, the number of used components with other step-up/step-down DC-DC converters have been implemented. The results of comparison show that the proposed converter possesses some good characteristics including wide voltage gain, fewer components, low current stress, and high efficiency. In the case of continuous input current, the proposed converter can use fewer components to achieve wider voltage gain, which saves cost and realises stable step-up and step-down voltage. The simulated model which adopts the closed-loop control mode is built. Finally, a typical prototype is established in the laboratory for confirmation, in which the dynamic response of the proposed converter is good, and a peak efficiency is about 93.8%.

Performance Analysis of a 22 GHz Microstrip Patch Antenna for High-Frequency Wireless Systems

The increasing need for high-frequency wireless applications, including satellite communications and radar systems, drives the demand for compact, high-performance antennas with efficient impedance matching, high gain, and stable radiation characteristics. However, traditional microstrip patch antennas often exhibit limitations such as poor impedance matching, polarization sensitivity, and undesirable side lobes, especially in the millimeter-wave spectrum. This study presents the design and evaluation of a microstrip patch antenna optimized for approximately 22 GHz, incorporating structural and material enhancements to improve performance. The antenna’s characteristics are analyzed in terms of Voltage Standing Wave Ratio (VSWR), gain, and S-parameters. The results show effective impedance matching within the 20.2–21.6 GHz range, achieving a minimum VSWR of 1.2034 at 21.4533 GHz. However, at 22.12 GHz, the VSWR rises to 4.5094, indicating impedance mismatch. To address this, modifications such as substrate optimization and impedance tuning are considered. Gain analysis demonstrates strong directional performance, with a peak gain of 5.5291 dB at 21.57 GHz. Moreover, S-parameter analysis confirms efficient impedance matching at 21.1733 GHz, with a reflection coefficient of -22.0036 dB, ensuring minimal signal loss. The findings indicate that the proposed antenna is well-suited for high-frequency applications. However, additional refinements are required to enhance impedance matching at 22 GHz, reduce side lobes, and improve efficiency. Future research will focus on optimizing the substrate, refining the feed network, and implementing structural modifications to achieve superior broadband performance.

Performance investigation of junctionless nanosheet FET with dual-k sidewall spacer using numerical simulations

ABSTRACT The Nanosheet FET emerges as a potential candidate in the area of semiconductor technology in comparison to FinFET. The presented manuscript has highlighted the performance improvement of using a dual-k dielectric sidewall spacer towards the source side and a low-k dielectric spacer towards drain side (ST4). This performance improvement is shown concerning i) low-k dielectric constant side wall spacer on two sides (Conventional, ST1) of the gate, ii) the dual-k dielectric constant side wall spacer on two sides of the gate (ST2) iii) dual-k dielectric constant spacer towards the drain side and low-k dielectric constant spacer towards the source side (ST3). The results showed that the structure with dual-k dielectric spacer towards the source side and low-k dielectric constant spacer towards the drain side (ST4) outperformed the most. Nanosheet FET with such a spacer combination can reduce the off-state current to approximately 95.17% of its value in conventional nanosheet FET. The configuration ST4 expresses the improvement in an intrinsic voltage gain (A V ), drain-induced barrier lowering (DIBL) and the subthreshold swing (SS) by 6%, 35.48% and 4.59 %, respectively, concerning the conventional structure, ST1 at VGS = 0.7 V. The result showed that the dual dielectric constant side wall spacer on two sides of the gate (ST2) performed well in terms of high drain current to a certain voltage but lacked in terms of improved Short Channel Effects. However, the configuration ST4 performs comparatively much better in various analogue/RF figures of merits. In this paper, all the structures are implemented and analysed at a gate length of 12 nm using the software Sentaurus Technology Computer-Aided Design.

An extendable mCWSCI converter for high-gain DC-DC conversion/regulation

ABSTRACT The analysis, design, and implementation of an extendable closed-loop booster scheme, named multistage-Cockcroft-Walton-doubler switched-coupled-inductor (mCWSCI) converter, is presented and addressed for further meeting the demands on high-gain DC-to-DC power conversion/regulation. The power part of mCWSCI consists of two subgroups: switched-coupled-inductor (SCI) booster and m-stage Cockcroft-Walton doubler (CWD), working to obtain the total voltage gain [ m n + 1 + nD + 1 ] / 1 − D theoretically ( D : duty cycle, n : turns ratio). When n = 3 , m = 2 , D = 0.5 , the output can be raised to 21 times the voltage of supply (e.g. 24 V to 500 V, applied in sputters). The control part of mCWSCI consists of three subgroups: isolated low-pass filter, sawtooth wave generator, and pulse-width-modulation (PWM) block, operating together to realise the topological timing control and reinforce the output regulation/robustness. Further, detailed analysis/design is provided, including steady-state response, voltage conversion ratio (VCR), power efficiency, inductance/capacitance selection, converter stability, and control compensation. Finally, several cases are considered via testing on the software of SPICE/on the prototype of mCWSCI, and the results are illustrated not only to examine the effectiveness of the analysis/design but also to show the practicality of this presented scheme (e.g. comparison of ratios: VCR-to-component-count).

A Single Source Nine‐Level Quadruple Boost Inverter With Optimized Switching Technique for EV Applications

ABSTRACTTraditional MLIs face several challenges, such as complex configurations, intricate switching control, difficulty in generating gate pulses, a large number of components, and high voltage stress on semiconductors. Additionally, increasing the number of voltage levels tends to raise the device count, which can add to the system's complexity, cost, and, in some cases, reduce reliability. In this paper, a new multilevel inverter (MLI) incorporating switched capacitors for improved performance is proposed. The proposed single source quadruple boost nine‐level inverter (SS‐QBNLI) topology addresses these issues by generating a nine‐level output voltage using only 10 switches, 1 diode, and 2 capacitors. Notably, the inverter achieves a voltage gain of four times the input. The capacitors are self‐balanced without requiring any external balancing circuitry. A simple pulse‐width modulation (PWM) technique based on logic gates is employed to ensure balanced capacitor operation. This approach also reduces the number of switches and minimizes voltage stress, while providing built‐in fault tolerance. The paper presents a detailed comparison with other related topologies. Simulations are conducted in MATLAB/Simulink under various conditions to validate the performance. Finally, the ability of the proposed inverter to achieve voltage boosting is experimentally confirmed from a laboratory prototype.

An Eleven-Level Modified Neutral-Point-Clamped (11L-MNPC) Inverter with Single Input DC Source for Renewable Energy Source Applications

Abstract In this article, an eleven-level modified neutral point clamped (11L-MNPC) inverter is presented. The 
proposed topology achieves a voltage gain of 2.5, which minimizes the DC-link voltage requirement by 80% as 
compared to the classical NPC inverter. The circuit comprises eight unidirectional switches with antiparallel 
diodes, two bi-directional switches, and two switched-capacitors (SCs). The voltages across the SCs and DC-link 
capacitors naturally settle at their requisite values without the need of any external circuitry or sensors. The 
proposed MNPC inverter is compared with existing NPC-based topologies, highlighting its advantages in terms 
of number of switches, number of capacitors, voltage gain, total standing voltage (TSV), etc. The proposed 
topology can work for a wide range of modulation indexes and inductive loads. The operation of the inverter is 
also validated for three-phase grid interconnection. The results reveal that the proposed multilevel inverter (MLI) 
has both active and reactive power handling capabilities, which makes it suitable for grid-tied renewable energy 
source applications.

2D MoTe2 CMOS Circuits and Photodiodes by Contact Engineering

AbstractPrecisely controlling charge‐carrier polarity in 2D materials is crucial for high‐performance complementary circuits. With its moderate bandgap, 2H‐MoTe2 enables tunable electron and hole injection, but stable n‐type conduction using low‐work‐function contacts without encapsulation has remained challenging. Here, a simple method is demonstrated to achieve stable n‐type polarity in 2H‐MoTe2 using semimetallic Bi contacts. The n‐type behavior remains air‐stable without encapsulation, as DFT calculations reveal minimal metal‐induced gap states, allowing the Fermi level to shift near the conduction band. The n‐channel MoTe2 devices achieve a maximum on‐state current of 18 µA and a high electron mobility of 64 cm2 V−¹s −¹. By integrating n‐type MoTe2 with Bi contacts and p‐type MoTe2 with Au contacts, CMOS inverters, NOR, and NAND gates are realized, with the inverter showing a high DC voltage gain of 51. Additionally, a MoTe2 p–n diode exhibits strong rectification (ratio ≈1.1 × 104, ideality factor 1.07) and excellent broadband photoresponse. Under 900 nm light at 0.046 mW cm−2, it achieves a responsivity of 0.25 A/W and detectivity of 6.3 × 1010 Jones. This work enables MoTe2‐based complementary circuits and photodiodes using only different contacts, simplifying 2D IC and optoelectronic device fabrication.

Bidirectional DC-DC Converter Topologies for Hybrid Energy Storage Systems in Electric Vehicles: A Comprehensive Review

Electric Vehicles (EV) significantly contribute to reducing carbon emissions and promoting sustainable transportation. Among EV technologies, hybrid energy storage systems (HESS), which combine fuel cells, power batteries, and supercapacitors, have been widely adopted to enhance energy density, power density, and system efficiency. Bidirectional DC-DC converters are pivotal in HESS, enabling efficient energy management, voltage matching, and bidirectional energy flow between storage devices and vehicle systems. This paper provides a comprehensive review of bidirectional DC-DC converter topologies for EV applications, which focuses on both non-isolated and isolated designs. Non-isolated topologies, such as Buck-Boost, Ćuk, and interleaved converters, are featured for their simplicity, efficiency, and compactness. Isolated topologies, such as dual active bridge (DAB) and push-pull converters, are featured for their high voltage gain and electrical isolation. An evaluation framework is proposed, incorporating key performance metrics such as voltage stress, current stress, power density, and switching frequency. The results highlight the strengths and limitations of various converter topologies, offering insights into their optimization for EV applications. Future research directions include integrating wide-bandgap devices, advanced control strategies, and novel topologies to address challenges such as wide voltage gain, high efficiency, and compact design. This work underscores the critical role of bidirectional DC-DC converters in advancing energy-efficient and sustainable EV technologies.

A class-AB rail-to-rail operational amplifier with wide supply voltage and high gain

A class-AB rail-to-rail operational amplifier with wide supply voltage and high gain

Bidirectional Hybrid DC–DC Resonant Converter With Wide Voltage Gain Range

Bidirectional Hybrid DC–DC Resonant Converter With Wide Voltage Gain Range

Integrated Renewable Energy System Using High Gain Interleaved Boost Converter with Modified Cheetah Optimization Based Adaptive PI-Controller

This study introduces an innovative strategy to boost the uptake of Electric Vehicles (EVs) while curbing greenhouse gas emissions. Addressing the primary limitation of EVs - their reliance on energy storage - entails integrating a high-performance brushless DC (BLDC) motor renowned for its swift dynamic response and efficiency. The main objective of the study is to merge Photovoltaic (PV) energy generation with a bidirectional grid connection for powering the BLDC motor effectively. This objective is achieved by the introduction of a High Gain Interleaved Boost Converter (HGIBC) for enhancing voltage-gain ratio and system adaptability of the PV system. A novel Modified Cheetah Optimization (MCO)-based Proportional Integral (PI) controller ensures precise control signal generation for the converter. The AC supply to the motor is facilitated by a 3-phase Voltage Source Inverter (VSI), with speed regulation achieved through a PI controller. Simultaneously, the Bidirectional single phase grid augmented with an adaptive PI controller and a battery system with bidirectional converter distribute power supply to the BLDC motor fed EV during in sufficient power supply from PV system due to its ecological changes. Moreover, to validate the importance of proposed system, MATLAB/Simulink is utilized. The most important results are the proposed HGIBC exhibits a higher voltage gain when compared to other existing Boost converters and generates an increased efficiency of 97%. Also, with the optimized PI controller a steady converter output of 1000V is achieved at 0.35s which indicates a reduced settling time. Also, the proposed work generates a reduced simulation THD value of 1.21%. The significance of the obtained results lies in the delivering of high converter efficiency, improved power quality and reliable performance of BLDC motor system.

Fully Soft-Switched High Voltage Gain Quasi-Z-Source Converter With Continuous Input Current and Low Switch Voltage Stress

Fully Soft-Switched High Voltage Gain Quasi-Z-Source Converter With Continuous Input Current and Low Switch Voltage Stress

A Single-Stage Common-Ground Inverter With High-Voltage-Gain Ability

A Single-Stage Common-Ground Inverter With High-Voltage-Gain Ability

Design of High Gain DC-DC Boost Converter for Electrical Vehicle

The design focuses on converting low battery voltage to high voltage for electric vehicle motor drives. It ensures high efficiency, fast dynamic response, and effective thermal management across a wide input voltage range. Traditional converters use duty cycle control, but have limited voltage gain for EV needs. Advanced topologies like cascaded and interleaved boost converters are used to achieve higher voltage gain and better performance. Key design factors include inductor selection, switching frequency, duty cycle optimization, and control strategies.

Analysis and optimization of a solar PV system with high-gain DC-DC converter and multilevel inverter

Abstract This paper presents a comprehensive analysis of a solar photovoltaic (PV) system incorporating Maximum Power Point Tracking (MPPT) using Perturb and Observe (P&O) algorithm, interfaced with a high gain (HG) step-up DC-DC converter and fed into an 11-level inverter with Proportional Resonant (PR) control. The suggested system is designed to optimize energy extraction from the solar array and enhance voltage gain to meet the requirements of medium-to-high power applications. The high step-up DC-DC converter ensures an efficient boost in voltage while maintaining low voltage stress on the components. An 11-level inverter is employed to convert the stepped up DC voltage into AC for grid-tied or standalone applications. The PR controller is chosen for its superior performance in tracking sinusoidal references and minimizing steady-state error. Using the PR controller, lower Total Harmonic Distortion (THD) values are achieved, with 6.45% for voltage and 4.65% for current. The performance of the inverter is analysed under Rotating Trapezoidal Sinusoidal Pulse Width Modulation (RTSPWM) technique, to evaluate their impact on harmonic distortion, voltage regulation, and overall efficiency.

Design and circuit applications of PTnMOSFET devices from planar to gate-all-around structures

In this work, we propose a punch-through nMOSFET (PTnMOSFET) as a practical alternative to pMOSFETs by adjusting the source/drain doping concentrations. This PTnMOSFET design simplifies device fabrication by eliminating the need for sizing adjustments or stress engineering techniques while effectively addressing current mismatch issues between pMOSFETs and nMOSFETs. Simulations of Planar, Fin Field-Effect Transistor (FinFET), and Gate-All-Around (GAA) PTnMOSFETs reveal that the GAA PTnMOSFET achieves a wide design window, an average subthreshold swing (SSavg) of 74 mV/dec, and an ION(PTnMOSFET)/ION(nMOSFET) ratio of 0.89. Gate lengths (LG) of 30 nm and 14 nm were selected to align with current and emerging semiconductor technology nodes, ensuring relevance to state-of-the-art devices. In circuit applications, the GAA single-carrier (SC) circuit exhibits significant improvements over the conventional (Conv.) GAA circuit (with Wp/Wn = 1). The GAA SC circuit demonstrates a 14.9% shorter delay time, a 5.5% higher voltage gain, and more symmetric signal noise margins (NM), with 117 mV for signal noise margin high (NMH) and 118 mV for signal noise margin low (NML). Benchmarking results further suggest that under the same supply voltage (VDD) and number of transistors, our GAA SC Static Random Access Memory (SRAM) achieves a read failure voltage of 0.145 V and a static signal noise margin of 56 mV in read mode, surpassing state-of-the-art studies on stacked nanosheet and cFET counterparts. While these results highlight the strengths of the proposed design, further experimental validation under diverse operating conditions is essential to fully assess its robustness and practical applicability.

Review on Innovative DC-DC Converter Design for High Efficiency and High Voltage Gain Applications

Review on Innovative DC-DC Converter Design for High Efficiency and High Voltage Gain Applications

Reliability analysis of fault-tolerant reconfigurable non-isolated dc-dc converter for dc microgrid

ABSTRACT In power electronic converters, capacitors and switches are the most vulnerable components prone to failure. This letter presents a topology with reconfigurable fault-tolerance capability, along with a reliability analysis. The proposed converter can be reconfigured in the event of faults in the input or output capacitor without altering the topology’s voltage gain. Fuses and relays are used to switch from normal operating mode to reconfigurable mode. To demonstrate the superiority of the proposed Fault-Tolerant Reconfigurable Quadratic Boost (FTRQB) converter over the conventional quadratic boost converter, a reliability analysis is conducted using the Markov chain model. The performance of the FTRQB converter is validated through a 1-kW hardware implementation, tested under input and output capacitor fault conditions.

Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium.

The ongoing demand for more energy-efficient, high-performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a crucial role due to the continuous downscaling of device dimensions. Tellurium (Te), in its 2D form, offers significant potential due to its high carrier mobility and ambipolar characteristics, with the carrier type easily tunable via surface modulation. In this study, atomically controlled material transformations in 2D Te are leveraged to create intimate junctions, enabling near-ideal field-effect transistors (FETs) for both n-type and p-type operation. A NiTex-Te contact provides highly transparent interfaces, resulting in low contact resistance, while the TiOx-Te gate dielectric forms an ultraclean interface with a capacitance equivalent to 0.88 nm equivalent oxide thickness (EOT), where the quantum capacitance of Te is observed. Subthreshold slopes (SS) approach the Boltzmann limit, with a record-low SS of 3.5 mVdec-1 achieved at 10 K. Furthermore, 2D Te-based complementary metal-oxide-semiconductor (CMOS) inverters are demonstrated operating at an ultralow voltage of 0.08V with a voltage gain of 7.1 V/V. This work presents a promising approach to forming intimate dielectric/semiconductor and metal/semiconductor junctions for next-generation low-power electronic devices.

Sensorless speed control of BLDC motor drive using Volt/Hertz method

ABSTRACT This paper presents a new sensorless speed control method for BLDC motors that combines the modified isolated Weinberg (MIW) DC-DC converter with a Volt/Hertz (V/F) control strategy. Using the V/F concept, the method eliminates the need for a commutation circuit and position sensors, which involve complex logic gates, simplifying the system. Keeping the voltage-to-frequency (V/F) ratio constant ensures minimal torque ripple, low steady-state speed error, and fast dynamic response, outperforming sensorless methods that struggle at low speeds. Including a switched inductor (SI) structure within the DC-DC converter boosts voltage gain and efficiency at various speeds. Compared to traditional methods, the V/F approach offers a more straightforward, robust alternative, providing smooth, reliable speed control without complex feedback loops. The proposed control scheme’s performance is simulated using MATLAB/Simulink (2018a). The OPAL/RT simulator generates switching pulses for the inverter and isolated Weinberg converter. It validates BLDC motor results, confirming improvements in performance, energy efficiency, and system reliability, positioning V/F control as an effective solution for high-performance BLDC motor applications.