Laser-induced graphene (LIG) technology, a technique for preparing three-dimensional porous graphene by laser direct writing on carbon precursors under ambient condition, has been widely used due to its low cost and high efficiency. However, there is still a lack of research on the influence of the defocusing on LIG synthesis. In this paper, LIG is prepared by UV laser on Polyetheretherketone (PEEK) film, and a finite element simulation of this process is established to infer the temperature field. The influence of the defocusing on the structure, morphology, specific surface area SSA, and electrical properties of PEEK-LIG is investigated while maintaining the same energy radiated per unit area. The results show that the defocusing changes the structure and morphology of PEEK-LIG by affecting the temperature field distribution in both the surface and thickness directions, which affects the properties of LIG, where the surface area ratio Sdr does not depend on the defocusing amount monotonically. As the UV laser nears the beam waist at the threshold of LIG formation, Sdr has its maximum value and improves its electrical conductivity.
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