Unusual Magnetoresistance Research Articles

A theory of magnetoresistance of non-magnetic metal on magnon valves

One recent exciting development in the field of magnonics is the discovery of universal unusual anisotropic magnetoresistance (UAMR) in nanometer-thick non-magnetic (NM) metallic bars that are deposited on magnon valves of two ferromagnetic insulators (FIs) sandwiching an NM metal. This UAMR has the same angular dependencies as various bilayers consisting of at least one magnetic layer and at least one metallic layer. This suggests that the UAMR of different systems may originate from the same physics, which is yet to be fully understood. Here, we reveal the common feature shared by all these systems: two-vector dependencies of tensor quantities. Specifically, the resistivity of an NM metallic bar depends on the magnetization of its adjacent FI due to the quantum penetration of itinerant electrons of the metallic bar into the FI and on a perpendicular field at the interface of the bar and the FI. We demonstrate that the two-vector dependence of the resistivity tensor is responsible for the observed universal UAMR of metallic bars on magnon valves, independent of the details of the microscopic interactions in different materials. We also propose experiments that can test this theory.

Charge Puddles Driven Complex Crossover of Magnetoresistance in Non-Topological Sulfur Doped Antimony Selenide Nanowires.

A race to achieve a crossover from positive to negative magnetoresistance is intense in the field of nanostructured materials to reduce the size of memory devices. Here, the unusual complex magnetoresistance in nonmagnetic sulfur-doped Sb2Se3nanowires is demonstrated. Intentionally, sulfur is doped in such a way to nearly achieve the charge neutrality point that is evident from switching of carrier type from p-type to n-type at 13 K as inferred from the low-temperature thermoelectric power measurements. A change from 3D variable range hopping (VRH) to power law transport with α = 0.18 in resistivity measurement signifies a Luttinger liquid transport with weak links through the nanowires. Interestingly, high magnetic field induced negative magnetoresistance (NMR) occurring in hole dominated temperature regimes can only be explained by invoking the concept of charge puddles. Spot energy dispersive spectroscopy (EDS), magnetic force microscopy (MFM) measurements, Tmottand Regel plot indicate an enhanced disorder in these sulfurized nanowires that are found to be the precursor for the formation of these charge puddles. Tunability of conducting states in these nanowires is investigated in the light of interplay of carrier type, magnetic field, temperature, and intricate intra-inter wire transport that makes this nanowires potential for large scale spintronic devices.

Anomalous High-Temperature Magnetoresistance in a Dilute 2D Hole System.

We report an unusual magnetoresistance that strengthens with the temperature in a dilute two-dimensional (2D) hole system in GaAs/AlGaAs quantum wells with densities p=1.98-0.99×10^{10}/cm^{2} where r_{s}, the ratio between Coulomb energy and Fermi energy, is as large as 20-30. We show that, while the system exhibits a negative parabolic magnetoresistance at low temperatures (≲0.4 K) characteristic of an interacting Fermi liquid, a positive magnetoresistance emerges unexpectedly at higher temperatures, and grows with increasing temperature even in the regime T∼E_{F}, close to the Fermi energy. This unusual positive magnetoresistance at high temperatures can be attributed to the viscous transport of 2D hole fluid in the hydrodynamic regime where holes scatter frequently with each other. These findings give insight into the collective transport of strongly interacting carriers in the r_{s}≫1 regime and new routes toward magnetoresistance at high temperatures.

Magnetotransport induced by anomalous Hall effect

In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall angle or the anomalous Hall angle is not small. Using the proper conductivity relation, we reveal an unexpected magnetoresistance (MR) induced by the anomalous Hall effect (AHE). A $B$-linear MR arises and the sign of the slope depends on the sign of the anomalous Hall angle, giving rise to a characteristic bowtie shape. The Hall resistance in a single-band system can exhibit a nonlinearity which is usually considered as a characteristic of a two-band system. A $B$-symmetric component appears in the Hall. These effects reflect the fundamental difference between the ordinary Hall effect and the AHE. Furthermore, we experimentally reproduce the unusual MR and Hall reported before in Co$_3$Sn$_2$S$_2$ and show that these observations can be well explained by the proposed mechanism. MR often observed in quantum anomalous Hall insulators provides further confirmation of the picture. The effect may also account for the large MR observed in non-magnetic three-dimensional topological Dirac semimetals.

Large-field magnetoresistance of nanometer scale nickel films grown on molybdenum disulfide

The magnetoresistance of thin nickel films grown on molybdenum disulfide was measured in perpendicular magnetic fields as high as 90 kOe. Films with thicknesses of 20 nm provided continuous surfaces for measurement. The magnetoresistance was found to be linear with respect to the applied magnetic field with no sign of saturation. There was also no evidence of hysteresis or temperature dependence between 100 to 300 K. STM measurement showed the deposited Ni forms a continuous film of extremely small nanoclusters. However, the field dependence of magnetoresistance was found to be significantly larger than bulk Ni, which is in turn larger than Ni with nanoscale grains. We expect the unusual magnetoresistance behavior to arise from some property of the Ni-MoS2 interface.

Noncollinear spin state and unusual magnetoresistance in ferrimagnet Co-Gd

Rare-earth transition-metal ferrimagnetic materials are promising candidates for next-generation spintronic devices owing to their small magnetic moments and fast dynamics. However, only a few studies have been conducted thus far on the transport properties of noncollinear ferrimagnetic spin textures. In this study, we investigate the transverse and longitudinal resistances in a ferrimagnet/heavy-metal heterostructure composed of Co-Gd and Pt. The transition-metal sublattice arrangement and magnetic field--temperature phase diagram are obtained based on unconventional hysteresis loops observed near the compensation point. In the collinear regime, the spin Hall magnetoresistance (SMR) and anisotropic magnetoresistance (AMR) exhibit normal oscillation curves. In the noncollinear regime, the SMR and AMR signals are inverted for the existence of a 90\ifmmode^\circ\else\textdegree\fi{} phase shift between magnetization and magnetic fields. Owing to the conical spin textures in the spin-flop state, sharp peaks emerge when the field is perpendicular to the film plane. The abnormal magnetoresistance in our results can be used to analyze complex magnetic structures, which plays an important role in the all-electrical readout of noncollinear spintronics devices.

Band-selective gap opening by a C4-symmetric order in a proximity-coupled heterostructure Sr2VO3FeAs

Complex electronic phases in strongly correlated electron systems are manifested by broken symmetries in the low-energy electronic states. Some mysterious phases, however, exhibit intriguing energy gap opening without an apparent signature of symmetry breaking (e.g., high-TC cuprates and heavy fermion superconductors). Here, we report an unconventional gap opening in a heterostructured, iron-based superconductor Sr2VO3FeAs across a phase transition at T 0 ∼150 K. Using angle-resolved photoemission spectroscopy, we identify that a fully isotropic gap opens selectively on one of the Fermi surfaces with finite warping along the interlayer direction. This band selectivity is incompatible with conventional gap opening mechanisms associated with symmetry breaking. These findings, together with the unusual field-dependent magnetoresistance, suggest that the Kondo-type proximity coupling of itinerant Fe electrons to localized V spin plays a role in stabilizing the exotic phase, which may serve as a distinct precursor state for unconventional superconductivity.

Tailoring large magnetoresistance in Dirac semimetal SrIrO3 films

Perovskite SrIrO3 is a special Dirac material with fascinating effects due to its strong electron correlation and spin–orbit coupling. In this work, a large magnetoresistance (MR) was observed not only in epitaxial SrIrO3 films but also in a SrIrO3/PbZr0.2Ti0.8O3 epitaxial heterostructure with a magnetic field applied perpendicular to the external electric field. The magnetoresistance of SrIrO3 (10 nm) and SrIrO3/PbZr0.2Ti0.8O3 (10 nm/30 nm) reach values as large as 40% and 110% at 9 T and 5 K, respectively. We believe that the unusual magnetoresistance is from the Dirac/Weyl state. Especially, the SrIrO3/PbZr0.2Ti0.8O3 bilayer shows negative magnetoresistance with strong oscillations close to the angle positions, where the magnetic field is parallel to the electric field at 1.8 K, which arises from the chiral anomaly. Based on first-principle calculations and study, the polarization field of PbZr0.2Ti0.8O3 can modulate the band structure of SrIrO3, which can modify the MR of SrIrO3. The SrIrO3/PbZr0.2Ti0.8O3 heterostructure accommodating both the ferroelectric property and the Dirac/Weyl state may open the avenue to manipulate the Dirac/Weyl properties via the electric polarization field.

Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide

Van der Waals (vdW) ferromagnets are an important class of materials for spintronics applications. The recent discovery of atomically vdW magnets CrI$_3$ and Cr$_2$Ge$_2$Te$_6$ has triggered a renaissance in the area of two-dimensional (2D) magnetism. Herein we systematically studied 2H-Mn$_{0.28}$TaS$_2$ single crystal, a 2D vdW ferromagnet with $T_c$ $\sim$ 82.3 K and a large in-plane magnetic anisotropy. Mn $K$-edge x-ray absorption spectroscopy was measured to provide information on its electronic state and local atomic environment. The detailed magnetic isotherms measured in the vicinity of $T_c$ indicates that the spin coupling inside 2H-Mn$_{0.28}$TaS$_2$ is of a three-dimensional (3D) Heisenberg-type coupled with the attractive long-range interaction between spins that decay as $J(r)\approx r^{-4.85}$. Both resistivity $\rho(T)$ and thermopower $S(T)$ exhibit anomalies near $T_c$, confirming that the hole-type transport carriers strongly interact with local moments. An unusual angle-dependent magnetoresistance is further observed, suggesting a possible field-induced novel magnetic structure.

Unconventional magnetoresistance in ZnO/C multilayers at low temperatures

A layer-by-layer sputtering method was used to fabricate nanostructures (ZnO/C)25 composed of zinc oxide and carbon alternating layers, with a total multilayer thickness of 146 nm and 153 nm. At low temperatures, the multilayers show signatures of local ferromagnetic order: magnetic hysteresis, weak magnetization and the characteristic shape of the thermomagnetic curve. In-plane and out-of-plane magnetoresistance (MR) was measured in a pulsed magnetic field up to 20 T in the temperature range of 15–300 K. At T ⩽ 20 K, MR changed its sign from negative in low magnetic fields to positive in moderate fields, and then back to negative in high magnetic fields. At T ⩾ 80 K, MR was negative in the full range of magnetic fields studied. The unusual MR behavior can be associated with the influence of the Zeeman effect on the Fermi level position in the case of 2D variable hopping conduction along the interfaces, scattering on magnetic heterogeneities and the effect of magnetic blockade.

Effects of the initial flux ratio on CeSb2 crystal growth by a self-flux method

Self-flux growth of the single crystal CeSb2 was studied in detail, and the most suitable growth parameters of CeSb2 were obtained. The unusual magnetoresistance properties of CeSb2 were observed and discussed.

Observation of gapped state in rare-earth monopnictide HoSb

The rare-earth monopnictide family is attracting an intense current interest driven by its unusual extreme magnetoresistance (XMR) property and the potential presence of topologically non-trivial surface states. The experimental observation of non-trivial surface states in this family of materials are not ubiquitous. Here, using high-resolution angle-resolved photoemission spectroscopy, magnetotransport, and parallel first-principles modeling, we examine the nature of electronic states in HoSb. Although we find the presence of bulk band gaps at the Gamma and X-symmetry points of the Brillouin zone, we do not find these gaps to exhibit band inversion so that HoSb does not host a Dirac semimetal state. Our magnetotransport measurements indicate that HoSb can be characterized as a correlated nearly-complete electron-hole-compensated semimetal. Our analysis reveals that the nearly perfect electron-hole compensation could drive the appearance of non-saturating XMR effect in HoSb.

Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene insertion layer

Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-electronics. In this report, we study the magnetoresistance (MR) of MoS2 field-effect transistors (FETs) with graphene insertion layer at the contact interface. Owing to the unique device structure and high-quality contact interface, a gate-tunable linear MR up to 67% is observed at 2 K. By comparing with the MRs of graphene FETs and MoS2 FETs with conventional metal contact, it is found that this unusual MR is most likely to be originated from the contact interfaces between graphene and MoS2, and can be explained by the classical linear MR model caused by spatial fluctuation of carrier mobility. Our study demonstrates large MR responses in MoS2-based systems through heterojunction design, shedding lights for the future magneto-electronics and van der Waals heterostructures.

Modulation of anisotropic magnetoresistance by anomalous hall signal and its application to real-time domain wall velocity measurement

We present here a way to modulate the anisotropic magnetoresistance (AMR) by anomalous Hall signal and thus measure the domain wall (DW) motion velocity at near-coercivity. We study the magnetization relaxation at the constant field in the longitudinal (Rxx) Hall geometry. We observed asymmetric Rxx peaks that appear at the DW pinning fields. This unusual magnetoresistance behavior is explained by considering the AMR modulation by the anomalous Hall voltage. In the proposed method, using the magnetization relaxation, the real-time DW velocity measurement is much easier in comparison to the other microscopy methods. Moreover, the additional signal from anomalous Hall voltage makes this technique simpler and sensitive for DW velocity measurements, which can be useful for various spintronic sensing applications.

Anomalous Hall magnetoresistance in single-crystal Fe(001) films

The angular-dependent magnetoresistance (MR) in epitaxial Fe(001) films grown on MgO(001) is systematically investigated at room temperature. The resistivities with in-plane magnetic fields parallel (ρx) and transverse (ρy) to a current and a perpendicular field (ρz) show a correlation of ρz ≈ ρx > ρy for Fe film thickness (dFe) between 3 and 50 nm, which is distinctly different from the conventional anisotropic MR relation of ρx > ρy ≈ ρz. The dependence of such unusual MR on dFe is quantitatively explained by the competition between the anomalous Hall MR, intrinsic anisotropic MR, and the MR induced by the geometrical size effect in Fe films. Our results also reveal the strong four-fold symmetric terms in the measured angular-dependent MR with a linear dependence of 1/dFe.

Anomalous magnetoresistance and magnetocaloric behaviour in layered intermetallic compound NdRu2Si2

The magnetoresistance (MR) and magnetocaloric properties of naturally occurring layered compound NdRu2Si2 with a Néel temperature TN = 24 K have been investigated in the temperature range 60 ≥ T ≥ 1.8 K. It has been shown that a high external magnetic field greatly modifies the MR properties of the compound which in its low temperature ferromagnetic state (T < 10 K) exhibits an unusual positive MR instead of being negative. Although, the magnetocaloric investigations at this field and temperature range further indicates that the compound is in a predominantly ferromagnetic state. With the lowering of temperature, the MR value changes from a negative 34% near TN to a positive 5% at 5 K. Magnetocaloric (MCE) investigations on NdRu2Si2 exhibit two well defined peaks corresponding to the magnetic transitions. A table like MCE behaviour has been observed in the temperature range from 5 K to 45 K.

Temperature-dependent electrical resistivity and magnetoresistance characteristics of Zn1−xVxO thin films above Mott critical density

Temperature-dependent (5–200 K) electrical resistivity and magnetoresistance (MR) measurements were carried out on [Formula: see text] (x = 0.5–4 at.%) thin films grown by pulsed laser deposition (PLD). The free electron concentration in the films was found to be in the range of [Formula: see text](1.7–4.7) [Formula: see text] which is much higher compared to the Mott critical density required for the onset of insulator-to-metal transition in ZnO. All the films exhibited small negative MR in the entire temperature and magnetic field range indicating weak-localization as the dominant effect. However, some unusual MR behavior was observed at 5 K for the film with highest static-disorder parameter. Such characteristics have been well-explained by considering the interplay of negative MR (arising due weak-localization and spin-disorder scattering) and positive MR (caused by s–d exchange interaction induced spin-splitting of the conduction band).

Theory of Spin Hall Magnetoresistance from a Microscopic Perspective.

We present a theory of the spin Hall magnetoresistance of metals in contact with magnetic insulators. We express the spin mixing conductances, which govern the phenomenology of the effect, in terms of the microscopic parameters of the interface and the spin-spin correlation functions of the local moments on the surface of the magnetic insulator. The magnetic-field and temperature dependence of the spin mixing conductances leads to a rich behavior of the resistance due to an interplay between the Hanle effect and the spin mixing at the interface. We describe an unusual negative magnetoresistance originating from a nonlocal Hanle effect. Our theory provides a useful tool for understanding the experiments on heavy metals in contact with magnetic insulators of different kinds, and it enables the spin Hall magnetoresistance effect to be used as a technique to study magnetism at interfaces.

Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe

The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising applications of unusual magnetoresistance (MR) properties. Herein, we systematically investigated the anisotropic MR in the newly-discovered Dirac node-line material ZrSiSe. By applying a magnetic field of 3 T by a vector field, three-dimensional (3D) MR shows the strong anisotropy. The MR ratio of maximum and minimum directions reaches 7 at 3 T and keeps increasing at the higher magnetic field. The anisotropic MR forms a butterfly-shaped curve, indicating the quasi-2D electronic structures. This is further confirmed by the angular dependent Shubnikov-de Haas oscillations. The first-principles calculations establish the quasi-2D tubular-shaped Fermi surface near the X point in the Brillouin zone. Our finding sheds light on the 3D mapping of MR and the potential applications in magnetic sensors based on ZrSiSe.

Multi-functional properties of non-centrosymmetric ternary half-Heuslers, RPdSb (R = Er and Ho)

We report here the observed unusual magnetoresistance, magnetocaloric effect and thermoelectric properties of half-Heuslers, ErPdSb, and HoPdSb, crystallizing in a non-centrosymmetric cubic structure. While ErPdSb exhibits a paramagnetic behaviour in the entire temperature range of our study (1.8–300 K), HoPdSb was found to order antiferromagnetically below 2.2 K. The magnetic entropy change was estimated to be ~48 and ~22 J (kg K)−1 at 2.5 K for Ho and Er sample, respectively, for a field change of 90 kOe, which is comparable or higher than the well-known magnetocaloric materials in this temperature range. The magnetoresistance (MR) behaviour was found to be a combination of positive and negative MR contributions analogous to that of the Weyl semimetals having non-trivial band structure (NbAs and TaAs) which can be modelled in terms of Adler–Bell–Jackiw anomaly. In addition, we observed low thermal conductivities for both these samples. Our studies clearly indicate that these half-Heuslers, HoPdSb and ErPdSb, exhibiting different properties can serve as multifunctional materials in various applications, specifically for ultra-low temperature applications.