Resistive Random Memory (RRAM) effect has been investigated in Pt/CaZrO3/Pt/Si thin-film device, which is demonstrated bipolar resistive switching (BRS) and unipolar resistive switching (URS) phenomenon. BRS has a wide voltage window to SET and RESET the device during the repetition of the cycle. In the URS measurement, the device was SET at a lower voltage window and RESET to a higher voltage window. The resistance ratio (RHRS/RLRS) is ≈102 in BRS and 103 in URS, respectively. It revealed a good retention time ≈103 s and ≈104 s in BRS and URS, respectively, to retain the data. During URS measurement, the device was SET and RESET at a compliance current of 5 μA and 1 mA, respectively. Poole-Frenkel (P-F) and Schottky emission (S-E) conduction mechanisms provide unrealistic dielectric constant. SCLC conduction mechanism has been dominated in the phenomenon of resistive switching. Formation and rupturing of thin conducting filament depend upon the migration of oxygen vacancies and oxygen ions. This device illustrates BRS and URS phenomenon and low compliance current, which may be suitable for nonvolatile memories.