Ultrafast Semiconductor Disk Laser Research Articles

Tightly locked optical frequency comb from a semiconductor disk laser.

Ultrafast semiconductor disk lasers (SDLs) passively modelocked using semiconductor saturable absorbers mirrors (SESAMs) generate optical frequency combs (OFCs) with gigahertz line spacings - a regime where solid-state and fiber lasers struggle with geometrical and Q-switching limitations. We stabilized both the frequency comb spacing and the offset without any additional external optical amplification or pulse compression. The overall noise performance is competitive with other gigahertz OFCs. A SESAM-modelocked vertical external-cavity surface-emitting laser (VECSEL) at a center wavelength around 1 µm generates 122-fs pulses with 160 mW average output power and we only needed 17-pJ pulse energy coupled into a silicon nitride (Si3N4) waveguide for supercontinuum generation (SCG) and OFC offset stabilization.

High-Power Sub-300-Femtosecond Quantum Dot Semiconductor Disk Lasers

Self-assembled quantum dots (QDs) as active media for ultrafast semiconductor disk laser offer large gain bandwidths, fast gain dynamics, and high temperature stability. We report on the shortest pulses and the highest pulse peak power from an optically pumped vertical external cavity surface emitting laser (VECSEL) based on QDs and optimized for passive modelocking at 1035 nm using a semiconductor saturable absorber mirror. We demonstrate 216-fs pulses with an average output power of 269 mW at a pulse repetition rate of 2.77 GHz and 396 W peak power. At a lower pulse repetition rate of 1.67 GHz, we achieve 193-fs pulses with 112 mW of average output power. We remark a higher optical-to-optical pump efficiency compared to our previous QW VECSELs in the sub-300-fs regime. This is further confirmed by a comparative analysis of the saturation recovery which reveals longer carrier lifetimes for the QD compared to QW VECSELs.

Carrier-envelope offset frequency stabilization of a gigahertz semiconductor disk laser

Optical frequency combs based on ultrafast lasers have enabled numerous scientific breakthroughs. However, their use for commercial applications is limited by the complexity and cost of femtosecond laser technology. Ultrafast semiconductor lasers might change this issue as they can be mass produced in a cost-efficient way while providing large spectral coverage from a single technology. However, it has not been proven to date if ultrafast semiconductor lasers are suitable for stabilization of their carrier-envelope offset (CEO) frequency. Here we present what we believe to be the first CEO frequency stabilization of an ultrafast semiconductor disk laser (SDL). The optically pumped SDL is passively modelocked by a semiconductor saturable absorber mirror. It operates at a repetition rate of 1.8 GHz and a center wavelength of 1034 nm. The 273 fs pulses of the oscillator are amplified to an average power level of 6 W and temporally compressed down to 120 fs. A coherent octave-spanning supercontinuum spectrum is generated in a photonic crystal fiber. The CEO frequency is detected in a standard f–to–2f interferometer and phase locked to an external reference by feedback applied to the current of the SDL pump diode. This proof-of-principle demonstrates that ultrafast SDLs are suitable for CEO stabilization and constitutes a key step for further developments of this comb technology expected in the coming years.

Multiphoton in vivo imaging with a femtosecond semiconductor disk laser.

We use an ultrafast diode-pumped semiconductor disk laser (SDL) to demonstrate several applications in multiphoton microscopy. The ultrafast SDL is based on an optically pumped Vertical External Cavity Surface Emitting Laser (VECSEL) passively mode-locked with a semiconductor saturable absorber mirror (SESAM) and generates 170-fs pulses at a center wavelength of 1027 nm with a repetition rate of 1.63 GHz. We demonstrate the suitability of this laser for structural and functional multiphoton in vivo imaging in both Drosophila larvae and mice for a variety of fluorophores (including mKate2, tdTomato, Texas Red, OGB-1, and R-CaMP1.07) and for endogenous second-harmonic generation in muscle cell sarcomeres. We can demonstrate equivalent signal levels compared to a standard 80-MHz Ti:Sapphire laser when we increase the average power by a factor of 4.5 as predicted by theory. In addition, we compare the bleaching properties of both laser systems in fixed Drosophila larvae and find similar bleaching kinetics despite the large difference in pulse repetition rates. Our results highlight the great potential of ultrafast diode-pumped SDLs for creating a cost-efficient and compact alternative light source compared to standard Ti:Sapphire lasers for multiphoton imaging.

Recent advances in ultrafast semiconductor disk lasers

AbstractThe performance of ultrafast semiconductor disk lasers has rapidly advanced in recent decades. The strong interest from industry for inexpensive, compact, and reliable ultrafast laser sources in the picosecond and femtosecond domains has driven this technology toward commercial products. Frequency metrology and biomedical applications would benefit from sub-200-femtosecond pulse durations with peak powers in the kilowatt range. The aim of this review is to briefly describe the market potential and give an overview of the current status of mode-locked semiconductor disk lasers. Particular focus is placed on the ongoing efforts to achieve shorter pulses with higher peak powers.

High-power integrated ultrafast semiconductor disk laser: multi-Watt 10 GHz pulse generation

Presented is an optically pumped modelocked integrated external-cavity surface emitting laser (MIXSEL) with a pulse repetition rate of 10 GHz, generating picosecond pulses at 2.4 W average output power at a centre wavelength of 963 nm. The MIXSEL structure integrates both the absorber and the gain layers within the same wafer. The saturable absorber is a single layer of self-assembled InAs quantum dots (QD) and the gain is obtained with seven InGaAs quantum wells. It is shown that the picosecond pulse duration is limited by the slow recovery time of the integrated QD saturable absorber.

Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms

We present a portable ultrafast Semiconductor Disk Laser (SDL) (or vertical extended cavity surface emitting laser—VECSELs), to be used for nonlinear microscopy. The SDL is modelocked using a quantum-dot semiconductor saturable absorber mirror (SESAM), delivering an average output power of 287 mW, with 1.5 ps pulses at 500 MHz and a central wavelength of 965 nm. Specifically, despite the fact of having long pulses and high repetition rates, we demonstrate the potential of this laser for Two-Photon Excited Fluorescence (TPEF) imaging of in vivo Caenorhabditis elegans (C. elegans) expressing Green Fluorescent Protein (GFP) in a set of neuronal processes and cell bodies. Efficient TPEF imaging is achieved due to the fact that this wavelength matches the peak of the two-photon action cross section of this widely used fluorescent marker. The SDL extended versatility is shown by presenting Second Harmonic Generation images of pharynx, uterus, body wall muscles and its potential to be used to excite other different commercial dyes. Importantly this non-expensive, turn-key, compact laser system could be used as a platform to develop portable nonlinear bio-imaging devices.