Ultraviolet Region Research Articles

High-Resolution Imaging Study on Photodissociation of OCS+ [A2ΠΩ=1/2,3/2 (ν1 0 ν3)

The development of the velocity map ion imaging (VMI) technique has greatly advanced the study of photodissociation dynamics. The high-resolution imaging study of the photodissociation allows for the acquisition of precise and detailed information on the fragments. This information can further provide more insight into the energy partition and potential pathways involved in the photodissociation process. In this study, we report the investigation on the photodissociation of OCS+ via the A2ΠΩ=1/2,3/2 states following the excitation of A2Π (ν1 0 ν3) ← X2Π (0 0 0) by using time-sliced VMI techniques in the ultraviolet region. Our investigation revealed significant mode-dependent recoil anisotropies and branching ratios of two product channels for both Ω = 1/2 and Ω = 3/2. The photolysis products also exhibited dramatic deviation in angular distributions and generally comparable kinetic energy distributions following the excitation to the same vibrational modes of A2ΠΩ states with two separate spin-orbit components. According to the observation in this study and previously reported photodissociation mechanisms of the OCS+ cations, the decay from the A2Π3/2 state was more likely via the internal conversion to high rovibrational states of the X2Π state, in comparison to the A2Π1/2 state.

An ultra-wide-angle metasurface absorber operating in the ultraviolet to visible range

Here, we propose an ultra-wide-angle metasurface absorber. It consists of a one-dimensional titanium grating periodic array with dislocation distribution. The average absorptivity of the absorber exceeds 94% in the ultraviolet to visible light band (200–760 nm) under normal TM-polarized incident wave. This benefits from the coupling of propagating surface plasmon resonance, local surface plasmon resonance, and hybrid mode resonance. For normal TE-polarized incident wave, the absorber achieves perfect narrowband absorption (>99.22%) in the ultraviolet light region because of the excitation of cavity-mode resonance. The absorber exhibits broadband absorption with an average absorptivity exceeding 85% in the visible light band because of the excitation of slot mode. These excellent absorption properties are well retained at 70° oblique incidence. The structural symmetry of the absorber dramatically expands the flexibility of device applications. It can achieve great absorption performance in an ultra-wide-angle range of 280° along the incident light direction. In addition, the absorber is sensitive to the polarization angle and incident angle of ultraviolet light, which can be used for ultraviolet detection and sensing. The proposed ultra-wide-angle metasurface absorber has potential application in the field of optical communication, photoelectric detection, and solar energy harvesting.

First-Order Derivative Spectrophotometry for Simultaneous Determination of Vitamin C and Nicotinamide: Application in Quantitative Analysis of Cocrystals.

Vitamin C (l-ascorbic acid, ASC) and the amide form of vitamin B3 nicotinamide (NIC) can form cocrystals through hydrogen bonding. Currently, there is a lack of fast and reliable alternatives for precisely quantifying cocrystal components and their purity. Spectrophotometric analysis for quantifying such vitamin preparations is challenging due to overlapping absorbance bands in a narrow wavelength range in the ultraviolet (UV) region. Moreover, ASC undergoes progressive degradation if not diluted in a proper medium, requiring stability during quantitative analysis. This study adopted a fast, simple, and reliable two-component spectrophotometric assay for simultaneously determining ASC and NIC based on the first-order derivative spectrophotometry (FODS) method using sodium oxalate as a stabilizer for vitamin C. The FODS method showed linearity between 2 and 24 μg·mL-1 and good precision. The standard addition method was employed to validate FODS, with high recovery percentages (96.5 to 102.4% for ASC and 95.3 to 101.9% for NIC). The FODS method was successfully applied to quantify ASC and NIC in bulk powder produced by the gas antisolvent method. The proposed method could estimate cocrystal purity through mass balance regarding the expected 1:1 stoichiometry, confirmed by PXRD and DSC. Cocrystal purity determined by the FODS method (58-100%) aligned well with results from LC-MS (62-100%), with an accuracy exceeding 97%. The FODS method is as sensitive and accurate as high-performance liquid chromatography for simultaneously determining vitamin concentrations deriving from cocrystals. However, it is less costly, more efficient, and a suitable alternative to classical solid-state methods for estimating cocrystal purity.

Optimizing the thermoelectric behavior of novel quaternary CoIrMnX (X=Sn, Sb) alloys through chemical potential or carrier concentration doping

Materials exhibiting significant polarisation at high spin rates are considered the most promising candidates for spintronic devices. This study investigates the mechanical, optical, spin-polarised electronic structure, magnetism, and thermoelectric properties of CoIrMnX (where X = Sn, Sb). We performed calculations of quaternary Heusler alloys using first-principles calculations. The CoIrMnSn and CoIrMnSb compounds have the most stable Type III crystal structures, according to the calculations performed on the alloys under investigation. We found that the two alloys, CoIrMnSn and CoIrMnSb, possessed a half-metallic ferromagnetic structure, characterised by indirect band gaps of 1.008 eV and 0.806 eV in the predominant spin channels, respectively. Both alloys demonstrate a significant overall magnetic moment of 5 and 6 μβ, respectively. CoIrMnX (where X = Sn, Sb) are ferromagnetic half-metals with 100 percent spin polarisation, according to the results. The results of the elastic constants demonstrate the alloys' mechanical stability. We also investigated optical characteristics such as dielectric function, absorption, reflectance, and optical conductivity. CoIrMnX (where X = Sn and Sb) acts as an efficient absorber in the ultraviolet region and possesses a high refractive index. Alloys exhibit considerable potential as viable candidates for implementation in spintronic devices. The maximum ZT value for CoIrMnSn (CoIrMnSb) is 0.915 (0.6619). To achieve this value, it is necessary to either reduce the charge carrier concentration to n = 0.0812 x 1020 (0.0952 x 1020) cm-3 or the μ to 0.83843 (0.83806) Ryd. Substantially examined materials demonstrate considerable potential for application in the field of thermoelectrics.

Engineering photoelectric conversion efficiency in two-dimensional ferroelectric C2PbI2Cl2/Sc2CO2 heterostructures

Properties of ferroelectric semiconductors have garnered significant research interest, particularly due to their non-volatile memory. Meanwhile, studies on the characteristics of two-dimensional (2D) ferroelectrics have appeared as a crucial topic in solar cells, i.e., bulk photovoltaic effects. In this work, we propose two heterostructures: Cs2PbI2Cl2/Sc2CO2-UP (CSUP) and Cs2PbI2Cl2/Sc2CO2-DOWN (CSDN) for solar cells, to examine their photoelectric properties by using first-principles. Our findings indicate that such two heterostructures may have both high exciton binding energies and strong optical absorption coefficients in the ultraviolet region, with the CSDN showing exceptional carrier mobility as well. Moreover, we explore their characteristics by means of modulations of electric fields and stresses. The results reveal that the transition of band alignment in the CSUP can be engineered from type-II to type-I under the control of the electric fields, which may significantly increase the power conversion efficiency in actual solar cells. Moreover, both may have good potential in the application of logic devices. All these outputs may imply that, by means of fine modulations on photoelectric properties, the Cs2PbI2Cl2/Sc2CO2 possess immense potential to become multifunctional devices in ultraviolet photodetectors, solar cells, and logic devices.

Study of vacancy defect in 2D/3D semiconductor heterostructure based on monolayer WSe2 and GaN

2D/3D heterostructure have attracted considerable attention within the scientific community due to their superior electronic properties and extensive spectral absorption capabilities. However, structural defect is inevitably introduced during the synthesis of 2D materials, which can significantly alter their intrinsic physical properties. Hence, 2D/3D semiconductor heterostructure composed of monolayers of WSe2 and GaN are constructed using first-principles calculations in this study. The impact of vacancy defect on the geometrical, electronic, and optical properties of the WSe2/GaN heterostructure is then systematically explored. The electronic property reveals that the introduction of impurity levels by vacancy defect, as well as interlayer surface-suspended bonds, results in a reduced band gap. This modification enhances the transfer ability of electrons from the valence band to the conduction band. Optical characterization demonstrates that the heterostructure formed by WSe2 and GaN exhibits a broad absorption spectrum, spanning from the visible to ultraviolet region, indicating a dual-wavelength photoresponse. Furthermore, regarding absorption coefficient and reflectivity, the heterostructure containing vacancy defect displays superior optical performance compared to the pristine heterostructure across both the visible and ultraviolet regions. The electronic and optical properties of the heterostructure can be tuned through the introduction of vacancy defects. These theoretical findings are anticipated to offer a foundational framework for the design of ultraviolet photodetectors utilizing WSe2/GaN heterostructure.

Band Alignment Engineering in 2D Ferroelectric Van der Waals Heterostructures for All‐In‐One Optoelectronic Architecture

Abstract2D van der Waals (vdW) heterostructures consisting of vertically stacking atomically thin semiconductors with different band structures provide a flexible platform to design integrated electronic and optoelectronic devices with multi‐functionalities. However, the realization of device multifunctionality requires the heterostructures with tunable band alignments. Here an efficient strategy is proposed by constructing 2D vdW ferroelectric semiconductor heterostructures composed of atomically thin ferroelectrics and semiconductors to achieve this goal. These calculated results indicate that the local built‐in electric field derived from the ferroelectric polarization can effectively modulate the band alignment of the heterostructures, leading to 36 potential band‐alignment transition pathways. Using SnS/In2Se3 vdW heterostructure as a prototype example, a reversible switching from high‐resistance to low‐resistance state is demonstrated by the band‐alignment transition from type‐II to type‐III driven by ferroelecric polarization switching, consequently leading to giant tunneling electroresistance (TER) ratio as high as 1012%. Moreover, the heterostructure with the momentum‐space matching band structure and in‐plane anisotropy exhibits broadband photoresponse from near‐infrared to ultraviolet regions and excellent polarization sensitivity with the dichroic ratio up to 10.3. The ferroelectric polarization‐dependent conductance state and photoresponse in the heterostructures make them large potential for the realization of all‐in‐one optoelectronic architecture in artificial vision system.

The electronic and optical properties of Al interstitial defects in KH2PO4 crystal: First principles study

KH2PO4 (KDP) crystals are widely used as frequency multipliers in inertial confinement controlled fusion ignition devices. The electronic and optical properties of KDP crystals with Al interstitial defects based on first principles are investigated. The results show that neutral and +3 charged Al interstitial can exist stably in the crystal. The +3 charged defect produces a larger lattice distortion. Bond length varies from −18.78 % to 43.71 % in the paraelectric phase(P-KDP) and from −25.57 % to 66.09 % in the ferroelectric phase (F-KDP). At the same time, +3 charged Al interstitial may also cause HO bond to break, resulting in the generation of H interstitials, which may compensate for the H vacancies in as-grown KDP. This may make the laser damage threshold slightly increase when KDP crystal is doped with +3 charged Al ion at low concentration. The optical spectra of Al interstitial are calculated, and the results show that in the paraelectric and ferroelectric phases, the optical transition of Al ions generally produces a large lattice relaxation energy, such as the lattice relaxation energy of up to 4.00 eV in the +2 to +3 charged defect transition in the paraelectric phase. This shows that the optical transition of Al interstitial will cause serious damage to the crystal. In the paraelectric phase, the absorption peaks of optical transitions found in the ultraviolet and visible regions are consistent with experiments. The absorption peak of the +1 to +2 charged defect transition is at 260 nm, which is very close to the absorption peak at 270 nm measured by experiments. The analysis of the Huang-Rys factors and transition displacement further confirms the conclusion that the optical transition of the defect charged state will cause serious crystal damage.

Formula process and coloring mechanism of bluish‐white porcelains from the Lanxi kiln in Fujian, China

AbstractBluish‐white porcelain was a prominent type of porcelain in ancient China, renowned for its distinctive artistic style and unique characteristics. The Lanxi kiln in Jianning County, Fujian Province, has unearthed a multitude of bluish‐white porcelain products from the Southern Song dynasty that exhibit vibrant glaze color and exceptional craftsmanship. The quality of these porcelains surpasses that of contemporaneous Jingdezhen and Baishe kiln products in Jiangxi Province, representing the pinnacle of bluish‐white porcelain excavated across various regions of China during the Southern Song dynasty. In this study, samples of bluish‐white porcelain from the Lanxi kiln and Baishe kiln, dating back to the Southern Song dynasty, were selected and analyzed via energy dispersive X‐ray fluorescence, ultraviolet–visible–near infrared (UV–Vis–NIR) spectrophotometer, metallographic microscopy, and scanning electron microscopy with EDS to investigate their glaze formula process and coloring mechanism. Moreover, these findings were subsequently compared with those of Jingdezhen bluish‐white porcelain from the same period. The results demonstrate that the raw materials of porcelain stones used in the glaze of the Lanxi and Jingdezhen kiln are similar in composition yet differ significantly from that employed in the Baishe kiln. Potassium feldspar was added to the glazes of the Baishe and Lanxi kiln, potentially existing exchanges of process of the two kilns due to their geographic proximity. The firing atmosphere of bluish‐white porcelain with different glaze colors in the same kiln exhibits significant variations. In particular, the lake blue sample undergoes firing under a strong reducing atmosphere, resulting in an excess content of Fe2+ in octahedral hexagon coordination within the glaze, thereby intensifying its blue hue. The colors of various glazes are determined by both chemical color and physical color. The former is a result of the absorption of Fe3+ in the ultraviolet region and the d‐d electron orbital transition of Fe2+ in the infrared region. However, the latter is not the scattering physical color but the diffuse reflection physical color produced by bubbles and anorthite crystallization layers.

Exploring optoelectronic and thermal characteristics of Janus MoSeTe and WSeTe monolayers under mechanical strain

This paper reveals the effect of external strain on the electronic, thermal and optical properties of Janus MSeTe (M=Mo, W) using first principles. Phonon spectrum calculations confirm the dynamic stability of the system. Biaxial stretching can effectively modulate its thermal properties. Uniaxial, biaxial and shear strains modulate the band structure, structural parameters, averaged differential charge density and optical properties of the MSeTe system to different degrees. The increase of compressive and shear strains leads to a gradual decrease of the band gap and triggers a semiconductor-metal phase transition at the critical point. The intrinsic system exhibits strong light absorption in the visible and ultraviolet regions, while strain induces a redshift of the light-absorbing edge, which enhances the response to the infrared and visible wavelength bands. These findings provide a theoretical basis and application potential for the design of optoelectronic devices and thermoelectric materials.

A novel fluorescent material K3NbOF6: Mn4+ for light-emitting diode devices

A series of K3Nb1-xOF6:xMn4+ fluorescent materials were prepared by the cation exchange method. Phase structure, morphology, emission, excitation spectrum and LED packaging of fluorescent materials were tested. The fluorescent material particles are micron-sized (5 μm–20 μm) and have a micro-rod morphology. It has two absorption bands, with the blue light region (∼468 nm) being stronger than the ultraviolet region (∼370 nm). Under the excitation of 468 nm, it shows good narrowband emission in the red light region, mainly with anti-stokes v6 (∼627 nm), which is caused by the double barrier of the 2Eg→4A2g transition broken by the coupling effect of electron and phonon. The optimum doping concentration was 9.1 %, and as the concentration increased again, the dipole–dipole interaction between Mn4+ resulted in concentration quenching. When the fluorescent material operates at high temperature (150 ℃), the emission intensity drops to 50.2 % of which at room temperature. At high temperature, the electrons absorb a large amount of heat energy, and the non-radiation transition to 4A2g energy level causes the thermal quenching effect. In addition, the sample also showed good water stability, after 1 h of hydrolysis, the luminescence intensity decreased to 85.6 % of the initial value. The use of LED packaging with fluorescent materials and InGaN-YAG:Ce3+ can effectively reduce the color temperature of LED from 6856 K to 3745 K, and enhance the Color index from 61.5 % to 76.8 %. Which has great potential for development in the fields of plant growth and backlight display technology.

Polyphosphazene Microparticles with High Free Radical Scavenging Activity for Skin Photoprotection.

Ultraviolet (UV) filters are the core ingredients in sunscreens and protect against UV-induced skin damage. Nevertheless, their safety and effectiveness have been questioned in terms of their poor photostability, skin penetration, and UV-induced generation of deleterious reactive oxygen species (ROS). Herein, an organic UV filter self-framed microparticle sunblock was exploited, in which quercetin (QC) and hexachlorocyclotriphosphazene (HCCP) were self-constructed into microparticles (HCCP-QC MPs) by facile precipitation polymerization without any carriers. HCCP-QC MPs could not only significantly extend the UV shielding range to the whole UV region but also remarkably reduce UV-induced ROS while avoiding direct skin contact and the resulting epidermal penetration of small-molecule QC. Meanwhile, HCCP-QC MPs possess a high QC-loading ability (697 mg g-1) by QC itself as the microparticles' building blocks. In addition, there is no leakage issue with small molecules due to its covalently cross-linked structure. In vitro and vivo experiments also demonstrated that the HCCP-QC MPs have excellent UV protection properties and effective ROS scavenging ability without toxicity. In summary, effective UV-shielding and ROS scavenging ability coupled with excellent biocompatibility and nonpenetration of small molecules make it a broad prospect in skin protection.

Bicone nanoflower evolution and multi-peak emission of polymer caped Cu doped ZnO.

A low-temperature polymer-assisted wet chemical method was used to synthesise Cu-doped ZnO bicone nanoflowers at three different PEG concentrations.The effects of PEG concentration on the structural, morphological and optical properties of Cu doped ZnO nanostructures were studied. X-ray diffraction studies revealed that the as-synthesized ZnO nanostructures are highly crystalline with a hexagonal wurtzite phase. The scanning electron microscopy (SEM) analysis showed that the prepared nanostructures have bicone-nanoflower morphology and PEG concentration has strongly influenced the size as well the shape of nanoflowers. The surface passivation effect of PEG on the band gap energies was studied by analysing UV -visible spectra of all the samples. The room-temperature fluorescent spectra of all the nanoflowers showed multiple peak emissions, both in the ultra-violet and visible regions, with varying intensities.These recasted multiple peaks are attributed to the morphological modification caused by the PEG addition.&#xD.

Expanding Color Control of Anodically Coloring Electrochromes Based on Electron-Rich 1,4-Dihydropyrrolo[3,2-b]pyrroles.

Anodically coloring electrochromes have received attention in recent years as high-contrast alternatives to cathodically coloring electrochromes due to their superior optical contrast during electrochemical switching. While current systems represent significant progress for organic electrochromics, it is necessary to expand the structural diversity of these materials while simultaneously reducing the hazards associated with synthetic protocols. With these considerations in mind, a family of 1,4-dihydropyrrolo[3,2-b]pyrrole (DHPP) chromophores with varying functionalities along the 2,5-axis was envisioned to accomplish these goals. After predicting different absorbance traits as oxidized molecules with time-dependent density functional theory, DHPP chromophores with varying peripheral functionalities were synthesized in a single aerobic synthetic step via an iron-catalyzed multicomponent reaction and characterized as high-contrast chromophores. In solution, the DHPP chromophores absorb in the ultraviolet region of the electromagnetic spectrum, resulting in color-neutral L*a*b* color coordinates of ∼100, 0, 0. Upon chemical oxidation, each molecule transitions to absorb at various points across the visible spectrum based on the extent of electron-donating ability and can display five distinct colors. Importantly, the chromophores are redox-active and display switching capabilities with an applied electrochemical potential. In conjunction with building fundamental insights into molecular design of DHPP chromophores, the results and synthetic simplicity of DHPPs make them compelling materials for color-controlled high-contrast electrochromes.

Polarization independent highly insensitive ultra-wideband absorber for infrared, visible light and ultraviolet region

This work proposes a nickel-dielectric-nickel-based superwideband absorber for the infrared, visible, and ultraviolet spectrums. A square ring is loaded with a corner-truncated square patch to form the resonating structure. The absorber measures 25 × 25 × 10.6 nm3 in total. Absorption (A) is above 90 % throughout a frequency spectrum of 136.3564–5407.291 THz (55.48–2200.12 nm), with an average absorption of 96.49 %. Absorption is ≥95 % within the frequency range of 713.12–4684.15 THz (64.04–420.68 nm). The absorber has A ≥ 80 % for incident angle (θ) ≤ 50°. In the operational band, absorption averages 92.39 % at θ = 50° and 86.65 % at θ = 60°. This absorber has volume reduction upto 99.99 % (in terms of λL3, λL is wavelength at cutoff frequency for A ≥ 90 %), A ≥ 90 % ultrawide bandwidth of ∼190 % (for A ≥ 90 %), average A = 96.49 %, polarization insensitiveness, stable A ≥ 80 % for θ ≤ 50°, almost stable absorption performance for ±0.2 nm dimensions variations due to fabrication tolerances.

A theoretical study on deep ultraviolet supercontinuum generation in subwavelength optical fiber

In order to obtain supercontinuum (SC) spectra in the deep ultraviolet (UV) region, a generation method of UV SC is proposed based on subwavelength fiber (SWF) composed of background material MgF2. The nonlinear Schrödinger equation is solved by the split-step Fourier method, the optical fiber transmission characteristics are analyzed by the full-vector finite element, and the evolution of the pumping light into SC is numerically simulated in detail. The results of the numerical analysis show that the SC spectra have a spectral width extending from 229.11 nm to 2366.68 nm when 350 fs input pulses of 6 kW peak power, centered about λ0 = 400 nm, are launched into a 4 cm long MgF2 SWF. Such a deep UV SC spectrum has many applications, especially in telecommunication and military fields.

Theoretical analysis of magnetic, optoelectronic, and thermoelectric properties of Cs2CuCrX6 (X = Cl and Br) double perovskites for spintronic and data storage devices

Spintronics is an emerging field that has the potential to replace conventional electronics due to their comparatively high speed, low power consumption, and infinite endurance. The phenomena of ferromagnetism with high spin polarization in double perovskites make them the desired materials for spintronics. In the present work, the structure of Cs2CuCrX6 (X = Cl and Br) and their magnetic and optoelectronic properties were studied by utilizing density functional theory (DFT). For the calculations of exchange-correlation potential, PBE-sol approximation was utilized while for the accurate measurement of electronic band structure and density of states (DOS), we employed mBJ potential. Both materials exhibit cubic structure and are thermodynamically stable as confirmed by volume optimization and negative formation energy respectively. Spin-based energy-volume optimization and values of exchange constants reveal the ferromagnetic nature of materials. It has been observed that 3-d states of Cr are responsible for ferromagnetism and have the major contribution to the net magnetic moment caused by exchange splitting. Furthermore, investigations of band structure and electronic density of states showed that both Cs2CuCrCl6 and Cs2CuCrBr6 were indirect bandgap (Eg) semiconductors with the Eg values of 1.2 eV and 0.33 eV respectively. The optical spectra of materials showed strong absorption in the ultraviolet region. Lastly, the transport and thermoelectric properties (TE) of materials were investigated in the range of temperature 300 K–800 K by using the BoltzTrap code. The transport parameter which included the electrical conductivity (σ/τ) and thermal conductivity (κe/τ) of the materials showed a decreasing trend with temperature whereas the Seebeck coefficient (S) and Power factor (P.F) showed an increasing trend for Cs2CuCrCl6 while decreases in case of Cs2CuCrBr6. Furthermore, a high figure of merit (ZT) with values of 0.75 and 0.64 was obtained for Cs2CuCrCl6 and Cs2CuCrBr6 respectively. The results of this work are encouraging and show the capabilities of the discussed materials in the fields of spintronics, thermoelectric, and optoelectronics.

Tailoring of structural and optical properties of GeOx thin films using 100 MeV Si ions

In the present work, the effects of 100 MeV Si ions on the structural and optical properties of GeOx thin films have been investigated. Thin films of Germanium oxide (GeOx) were deposited onto silicon substrates using electron beam evaporation technique. Subsequently, 100 MeV Si7+ ions were used to irradiate as-deposited films at different fluences ranging from 5 × 1012 to 2 × 1013 ions/cm2. As-deposited films are amorphous as evident from XRD and Raman results. After irradiation with a fluence of 5 × 1012 ions/cm2 the films show partial crystallization. The strong photoluminescence (PL) exhibited from as-deposited and irradiated films is in ultraviolet (UV) and blue region. The blue shift was observed in PL bands after ion beam irradiation. PL band intensity was found to vary with irradiation fluence. The possible mechanism of variation in the PL emission from GeOx thin films with Si ion irradiation has been studied.

Effect of Bi doping on the electrochemical behaviour of Mg2SiO4 nanoparticle for energy storage applications

Silicate-based compounds are promising nanomaterials due to their high specific surface area, thermal stability, chemical stability, and fast kinetics. In this study, we synthesised pure, 2% Bi-doped, and 4% Bi-doped Mg2SiO4 nanoparticles using a simple and cost-effective sol-gel method. Various techniques such as XRD, FESEM, EDAX, FTIR, Raman, UV-Vis-NIR, cyclic voltammetry (CV), and galvanostatic charge-discharge (GCD) were employed to investigate the prepared samples. XRD patterns confirmed the crystalline phases through phase matching; and the crystallite size, dislocation density, and residual strain were derived. FESEM images showed that pure and Bi-doped Mg2SiO4 have regular spherical shapes and uniform sizes with minimal agglomeration. Particle sizes determined from FESEM images were 49 nm for the pure sample, 42 nm for the 2% Bi-doped sample, and 40 nm for the 4% Bi-doped sample. FTIR and Raman spectra verified the presence of various vibrational modes characteristic of the Mg2SiO4 structure. The UV-Vis-NIR spectra indicated strong absorption in the ultraviolet region upon doping with bismuth. The impact of Bi doping on the electrochemical behaviour of Mg2SiO4 was studied using CV and GCD techniques in a three-electrode system, where the sample-coated Mg foil (active material/activated carbon/polypyrrole) served as the working electrode. GCD curves showed that the 4% Bi-doped Mg2SiO4 electrode exhibited a maximum specific capacitance of 1043 F/g, outperforming the pure and 2% Bi-doped samples. Additionally, the 4% Bi-doped electrode maintained a capacity retention of 80% over 400 cycles. These results suggest that 4% Bi-doped Mg2SiO4 nanoparticles are excellent candidates for electrode material in energy storage applications.

Remarkable improvement in photocatalytic activity of NiO nanoparticles through Ag doping: A kinetics-mechanism & recyclability

Metal oxides are recognized as exemplary materials for photocatalytic dye degradation attributed to their unique characteristics such as tunable electronic structure, prolonged stability, and cost-effectiveness. However, the wide band gap inherent to most of these materials often limits their light absorption to the ultraviolet (UV) region. Consequently, the doping of noble metal nanoparticles into the metal oxide nanostructures has been proposed to significantly improve their light-harvesting ability. This enhancement is primarily ascribed to the localized surface plasmon resonance (LSPR) effect associated with noble metal nanoparticles, which facilitates more effective utilization of light. Thus, in this study, we synthesized silver-doped nickel oxide (Ag:NiO) with varying Ag concentrations (0, 1, 2, 4, 6 wt%) to evaluate their photocatalytic performance. The X-ray diffraction (XRD) spectra revealed that NiO possesses a cubic crystalline structure, and a peak shift to a higher angle was noted for Ag doping, indicative of compressive strain. Further analyses of morphological, vibrational, and absorption properties were conducted through the acquisition of scanning electron microscopy (SEM) images, Raman spectra and UV–Vis absorption spectra, respectively. The photocatalytic degradation of methylene blue (MB) and rhodamine B (RhB) dyes was assessed, revealing that NiO with 4.wt.% Ag doping exhibited enhanced photocatalytic activity, achieving 99% degradation of MB and 90% degradation of RhB. Notably, Ag doping significantly enhances the light absorption capabilities and modifies the electronic structure of the NiO, thereby improving its performance in photocatalytic dye degradation.