Type Silicon Research Articles

Evaluation of industrial and consumer 3-D resin printer fabrication of microdevices for quality management of genetic resources in aquatic species

Aquatic germplasm repositories can play a pivotal role in securing the genetic diversity of natural populations and agriculturally important aquatic species. However, existing technologies for repository development and operation face challenges in terms of accuracy, precision, efficiency, and cost-effectiveness, especially for microdevices used in gamete quality evaluation. Quality management is critical throughout genetic resource protection processes from sample collection to final usage. In this study, we examined the potential of using three-dimensional (3-D) stereolithography resin printing to address these challenges and evaluated the overall capabilities and limitations of a representative industrial 3-D resin printer with a price of US$18,000, a consumer-level printer with a price <US$700, and soft lithography, a conventional microfabrication method. A standardized test object, the Integrated Geometry Sampler (IGS), and a device with application in repository quality management, the Single-piece Sperm Counting Chamber (SSCC), were printed to determine capabilities and evaluate differences in targeted versus printed depths and heights. The IGS design had an array of negative and positive features with dimensions ranging from 1 mm to 0.02 mm in width and depth. The SSCC consisted of grid and wall features to facilitate cell counting. The SSCC was evaluated with polydimethylsiloxane (PDMS) devices cast from a typical photoresist and silicon mold. Fabrication quality was evaluated by optical profilometry for parameters such as dimensional accuracy, precision, and visual morphology. Fabrication time and cost were also evaluated. The precision, reliability, and surface quality of industrial-grade 3-D resin printing were satisfactory for operations requiring depths or heights larger than 0.1 mm due to a low discrepancy between targeted and measured dimensions across a range of 1 mm to 0.1 mm. Meanwhile, consumer-grade printers were suitable for microdevices with depths or heights larger than 0.2 mm. While the performance of either of these printers could be further optimized, their current capabilities, broad availability, low cost of operation, high throughput, and simplicity offer great promise for rapid development and widespread use of standardized microdevices for numerous applications, including gamete quality evaluation and “laboratory-on-a-chip” applications in support of aquatic germplasm repositories.

First Application of Non‐Metallic A2B Type Silicon Corrole Complexes in Electrocatalytic Hydrogen Evolution

AbstractIn this study, we have successfully synthesized two non‐metallic‐based silicon corrole complexes (F10C−Si, F10C−CN−Si) and used them as HER electrocatalysts for the first time. Electrochemical studies indicate the electrocatalytic HER may go via EE‐CEEC (E: electron transfer step, C: chemical step) pathway. Notably, it can be seen that the introduction of electron‐withdrawing cyano group on the meso‐phenyl of the corrole macrocycle may enhance the catalytic activity of silicon corrole complexes. In DMF with TsOH as the proton source, F10C−CN−Si exhibits a turnover frequency (TOF) of 331.48 s−1 and a high catalytic efficiency (C.E) of 1.29. Furthermore, the catalytic prowess of the silicon corrole complexes extends to neutral aqueous solution, with F10C−CN−Si achieving a TOF of 52.72 h−1 at an overpotential of 1188 mV. This study extends the application of non‐metallic‐based silicon corrole molecular catalysts in the electrocatalytic HER field.

Fluorescent antenna based on Förster resonance energy transfer (FRET) for optical wireless communications

The use of fluorescent antennas in optical wireless communications (OWC) has been demonstrated previously, and it has been shown that it is an efficient method for enhancing receiver performance, providing both signal gain and a wide field of view (FoV). To achieve a high concentration gain at the receiver output, the selected fluorophores should have a high photoluminescence quantum yield (PLQY), limited overlap between their absorption and emission spectra, and emit light that can be efficiently detected. In addition, to support a high modulation bandwidth, the photoluminescence (PL) lifetime of the fluorophore needs to be short. In this paper, we propose a new fluorescent antenna architecture based on Förster resonance energy transfer (FRET). Our results show that, due to the photophysical interactions between the energy donor and energy acceptor, the use of FRET simultaneously increases PLQY and reduces PL lifetime. Additionally, employing FRET leads to an increased Stokes shift, ensuring that the emitted light has longer wavelengths, thus reducing self-absorption. This shift can also increase the efficiency with which the fluorescence is detected by a typical silicon (Si) photodetector. Consequently, our OWC results show that a new FRET-based antenna can achieve a significantly higher concentration gain and a wider transmission bandwidth than a conventional non-FRET antenna, leading to much higher data rates.

Synthesis and Characterization of SrTiO3 Doped with Bi(CH3COO)3

Synthesis of Strontium Titanate (SrTiO3) doped with Bismuth Acetatem (Bi(CH3COO)3) has been successfully carried out with varying concentrations of 0%; 0.5%; 1%; and 1.5% impurity in weight percent. The concentrated solution was dripped onto a P- type silicon substrate (1 0 0) using the Chemical Solution Deposition (CSD) method and spin coating technique. Annealing process was carried out with a temperature increase of 1.67oC/minute and held at 850oC for 8 hours and then cooled to room temperature for 12 hours. The film thickness was determined by the volumetric method, resulting in values of 3.9 μm, 4.3 μm, 4.7 μm and 5.1 μm. The analysis of optical properties with the Kubelka-Munk function for the direct transition results a band gap of 3.46 - 3.56 eV. Analysis of the XRD results was carried out using the Cramer-Cohen method and obtained lattice parameters (a=b=c) of Strontium Titanate (SrTiO3) doped with Bismuth Acetate (Bi(CH3COO)3) with various concentrations of 0%; 0.5%; 1%; and 1.5% are 3.835 Å, 3.837 Å, 3.909 Å, 3.913 Å respectively with a cubic crystal structure. This is because the ionic radius of bismuth (1.32 Å) is larger than that of strontium (1.17 Å), so bismuth will replace strontium in thin films. This replacement causes the lattice parameter values to increase, and effects the XRD spectral curve at the preferred peak (1 1 0) shift to the left. This shows that the doping bismuth has entered the strontium host.

Occurrence and transformation behaviour of silicon-bearing minerals during high silicon coal combustion from Yunnan Province, China

To understand the mineralogical characteristics and transformation behaviours of silicon-bearing minerals during coal combustion, seven typical high silicon (high-Si) coals and two high-Si fly ashes generated from high-Si coal-fired power plants were chosen. The coals were first treated by a method of low temperature ashing and the float-sink test for heavy minerals separation. Subsequently, low temperature ashes (LTA), light mineral fractions (LM), heavy mineral fractions (HM), and fly ashes from coal-fired power plants were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) combined with energy spectrum analysis (EDX), X-ray fluorescence spectrometry (XRF), and simultaneous thermogravimetry and differential scanning calorimetry (TG-DSC).The results show that The mineral compositions in the LTA and LM are almost the same and majorly composed of quartz, kaolinite, calcite, dolomite, daphnite, chlorite-serpentine, pyrite, and anatase. The mineral compositions identified in the HM are clearly different from those in the LTA and LM. Pyrite, fluorapatite, anatase, siderite, dolomite and a plenty of silicate minerals including quartz, clinochlore, daphnite, chlorite, and chamosite are found in the HM. Chlorite is a quite common mineral in the HM with different shapes, including schistose, long tetragonal prism, cylindrical, block-shaped, and near-spherical, can be identified. The minerals identified in the fly ashes from the high-Si coal-fired power plants include quartz, mullite, and hematite. The mullite in the fly ashes is derived from the transformations of quartz, kaolinite, and chlorite in the coals. The quartz in the fly ash is mainly derived from the unchanged quartz in coal and a secondary origin from the SiO2-Al2O3 phase transformation. The high-Si fly ash with the size fraction of 38.5–74 μm contains the highest SiO2 content.

A ROLL’S WEAR DURING HOT ROLLING OF HIGH-SILICONSTEEL AND ITS IMPACT ON THE QUALITY OF A STRIP’SPROFILE

Hot rolling of grain-oriented high silicon steel is related to technical problems such as high temperature andlong rolling campaigns with strips of the same width. Numerous methods may be carried out as a solutionto these problems. Before the rolling campaign, all rolls of finishing stands are exchanged. The campaign isscheduled with additional exchanges of rolls on two last stands in two stages. A roll’s wear increases with thequantity of rolled material and may lead to strip profile deformation. Exchanging the rolls ensures the requiredsteel quality and prevents losses caused by quality defects. This work identifies factors affecting the workroll's wear and refers to the material from which rolls are made. This work aimed to determine the wear ofwork rolls of the finishing group rolling mills during the rolling of high-silicon steel. The work presents wearanalyses of 30 rolls. It was analysed depending on roll type and high silicon steel rolled material quantity.Compared wear of rolls after rolling high-silicon steel and black sheet. By analysing the distribution of rollwear along the length of the roll, it was found that the wear of working rolls directly affects the geometry ofthe rolled sheet, which may affect the quality of the strip profile of the rolled sheet.

Numerical Simulations of Space Charge Waves Amplification Using Negative Differential Conductance in Strained Si/SiGe at 4.2 K

This paper introduces a two-dimensional (2D) numerical simulation of the amplification of space charge waves using negative differential conductance in a typical MOS silicon–germanium (SiGe)-based field-effect transistors (FET) and complementary metal oxide semiconductor (CMOS) technology at 4.2 K. The hydrodynamic model of electron transport was applied to describe the amplification of space charge waves in this nonlinear medium (i.e., the negative differential conductance). This phenomenon shows up in GaAs thin films at room temperature. However, this can be also observed in a strained Si/SiGe heterostructure at very low temperatures (T &lt; 77 K) and at high electric fields (E &gt; 10 KV/cm). The results show the amplification and non-linear interaction of space charge waves in a strained Si/SiGe heterostructure occurs for frequencies up to approximately 60 GHz at T = 1.3 K, 47 GHz at T = 4.2 K, and 40 GHz at T = 77 K. The variation of concentration and electric field in the Z and Y directions are calculated at 4.2 K. The electric field in the Z direction is greater than in the Y direction. This is due to the fact that this is the direction of electron motion. In addition to deep space applications, these types of devices have potential uses in terrestrial applications which include magnetic levitation transportation systems, medical diagnostics, cryogenic instrumentation, and superconducting magnetic energy storage systems.

Investigation on comfort and water repellant properties of the Rtv-2 (Bi-component room temperature vulcanizing silicone) silicone coated woven fabric

The main goal of the study is to be obtained water repellant properties of woven fabric coated by Bi-Component Room Temperature Vulcanizing Silicone (RTV-2 silicone) and investigate the physical and thermal properties of these fabrics. In addition, the interaction between calendaring, sanforizing processes, which were known as mechanical finishing treatments, and RTV-2 coating application was investigated in terms of fabric physical performance. According to these experimental results, the possibility of the RTV-2 type silicone as alternative to C6 and C8 based fluorocarbon can be discussed. In this experiment, the woven fabric was coated by RTV-2 silicone with two different coating thickness (0.6 mm and 0.8 mm). The effect of the RTV-2 silicone onto woven fabric were examined and enlightened by physical performance and water repellence tests such as contact angle degree and spray rating tests. The results from contact angle degree and spray rating test pointed out that RTV-2 silicone coated fabric had up to 153.27° contact angle degree and ISO 3 (80) spray rating value whereas untreated fabric had 85.81° contact angle degree and 0 spray rating value. Thermal comfort test (ALAMBETA) showed that, thermal capacity value of the fabric decreased from 0.064 mm2/s to 0.040 mm2/s after RTV-2 silicone coating. On the other hand, thermal absorptivity value of the fabric increased from 117.25 to 234.95 W.%s/m2.K which leaded to increase the cold feeling of the fabric after coating RTV-2 silicone regardless of coating thickness and mechanical finishing processes. Photos from the textile surfaces were taken via Field Emission Scanning Electron Microscope (FE-SEM). It was obviously seen surface morphology after coating and mechanical finishing processes. At the end of the study, it was determined that it is possible to say that RTV-2 silicone usage can positively affect water repellant properties of the fabric while thermal comfort and tactile comfort properties is negatively affected. Fabric performance test such as pilling, abrasion resistance and color fastness to washing did not showed any change after RTV-2 silicone coating and mechanical finishing processes. As for the mechanical finishing processes interaction between RTV-2 silicone, it was seen that the RTV-2 silicone was affected by finishing processes.

ALD deposited bipolar HfOx films for silicon surface passivation

Hafnium oxide thin films consist of trap states which can degrade or enhance the device performance depending upon the application. These trap states play a crucial role in silicon surface passivation when using HfOx films. This paper investigates the dependence of crucial surface passivation parameters on different film growth components of thermal ALD process. Our study is focused on understanding different oxide charges present at the HfOx/Si interface using capacitance-voltage and constant voltage stress studies; particularly trap states introduced during thermal atomic layer deposition process. This study is performed for different film growth conditions to understand the origin of traps states. We show that the interfacial layer (IL) grows during the film deposition and therefore two interfaces are formed, i.e., HfOx/SiOx and SiOx/Si. Acting as the tunnelling oxide, this interlayer consists of trap states which are intrinsic in origin. The investigation on MOS structures fabricated using n and p type silicon substrates gives an understanding towards amphoteric nature of the trap states. Their nature (acceptor/donor) depends on the substrate doping type (n-Si/p-Si) giving it bipolar characteristic. However, the interaction of such trap states with the majority carrier band edge of the substrate strongly depends on the IL thickness. Additionally, the trap charge density increases with metal pulsing duration, suggesting that the metal precursor may be the source of these trap charges rather than the oxidant. By shedding light on the nature and behaviour of trap states in HfOx films, our study contributes to a deeper understanding of their impact on device performance. This knowledge can aid in optimizing surface passivation strategies and improving the overall performance of HfOx-based devices in various applications.

Impact of Voltage Temperature Coefficient on power prediction of four type silicon photovoltaic module technologies installed in real conditions in the north-central of Algeria

In this paper, attention has been paid to the importance of knowing the exact values of the temperature coefficients used in modeling of four different types of photovoltaic modules these modules are; monocrystalline silicon m-Si, polycrystalline silicon p-Si, amorphous silicon a-Si, and micromorphous silicon thin film μm-Si installed in outdoor conditions in north-central Algeria. The value of the temperature coefficients provided by the module manufacturer in the datasheet is obtained under specific conditions called the standard test conditions STC, but in reality, these conditions vary significantly if the modules are operated in real climatic conditions, this will lead us to recalculate these coefficients again to improve our model using a database collected over a period of one year obtained by our characterization bench of PV modules using a two diodes model. A comparison was made between the simulation and the experimental data of the selected modules using the new values of the calculated temperature and those given at STC conditions, the obtained results show that the use of these new calculated temperature coefficients leads to a reduction of the the Mean Relative error MRE on the annual power from 2 to 7% depending on the PV module's technology which shows the importance of knowing the real value of the temperature coefficients that will be used in the PV module and system modeling.

Humidity Robustness of 3.3kV SiC-MOSFETs for Traction Applications - Compared to Standard Silicon IGBTs in Identical Packages

Silicon carbide (SiC) MOSFETs are gaining more and more market share in typical silicon (Si) IGBT applications such as traction or renewable energies. Especially in reliability sensitive traction applications, medium voltage IGBT-modules (3.3 kV-6.5 kV) are widely used and introducing SiC-MOSFETs to such industries is the next self-evident step already on the way. While their superior electrical performance has been generally accepted already (e.g. [1]), SiC-modules have not yet established a track record of high reliability in this voltage class. For this study, 3.3kV SiC-MOSFET-switches were compared to standard Si-IGBTs regarding their humidity robustness under high voltage bias. Both chip types had been assembled in the same traction rated packages to exclude this influence. The Si-IGBTs resembled the well-known industry standard performance, while the SiC-MOSFETs show no degradation within the reported test time of 2000 h. Given the fact [2], that the latest Si-IGBT generation offers a much better humidity performance as well, the standardised HV-H³TRB is no longer sufficient to provoke failures within a reasonable testing time. On the one hand, this suggests that humidity driven failures will not be an issue under field conditions anymore. On the other hand, even harsher tests are required to investigate differences in humidity performance.

Role of minority charge carriers in the formation of the thermo-electromotive force in p-type silicon

The contribution of minority charge carriers (electrons) is taken into account in the evaluation of thermo-electromotive force (thermo-E.M.F.) of a non-degenerate p-type semiconductor in the stationary state and when the quasi-neutrality condition is fulfilled. The results obtained show that the contribution to the thermo-E.M.F. due to the presence of minority electrons is a function of the bandgap and the length of the semiconductor used. It also depends on the minority carriers through their electrical conductivity, thermal conductivity, Seebeck coefficient, and bulk and surface recombinations. That contribution tends to reduce the principal thermo-E.M.F. (αpΔT) of the p-type semiconductor and will, therefore, be called counter-thermo-electromotive force (counter-thermo-E.M.F.). The calculations made in the case of silicon give a counter-thermo-E.M.F. of magnitude generally non-negligible, which decreases when the length of the silicon and the concentration of doping elements increase. Finally, it is shown that the best way to minimize the counter-thermo-E.M.F. is to treat the surface of the semiconductor to promote the recombination of minority carriers there.

Analysis of Si Back‐Contact for Chalcogenide Perovskite Solar Cells Based on BaZrS3 Using SCAPS‐1D

AbstractBarium zirconium sulfide (BaZrS3), a chalcogenide perovskite, is attracting a lot of attention for thin‐film photovoltaic (PV) application. Unlike the lead halide perovskites, it is stable and does not contain toxic elements. Herein, PV devices incorporating barium zirconium sulfide (BZS) are investigated numerically as a photoabsorber with a back‐contact layer of both crystalline and amorphous p+ type silicon, using a Solar Cell Capacitance Simulator software‐1D. The titanium (Ti) alloyed BZS, which has an electron‐energy bandgap close to optimum for a single junction PV device, is also investigated. A systematic study is carried out by varying the thickness, doping density, and defect density in the BZS layer. Among the two phases of Si, the amorphous one results in higher photoconversion efficiency (PCE) due to a favorable energy band alignment with BZS. The corresponding best PCEs predicted from the study are 19.7% for BZS films and 30% for Ba(Zr0.95Ti0.05)S3 films with the amorphous Si as back‐contact.

Seedless and surfactant-free growth of flower-shaped ZnO nanostructures: Growth evolution mechanism

In this work, an innovative seedless and surfactant-free chemical bath deposition (CBD) method at low temperature was applied to obtain flower-shaped ZnO nanostructures (FZONSs) on glass and [Formula: see text]-type silicon substrates for the first time. Structural properties of these FZONSs were examined. The NSs were produced from zinc nitrate hexahydrate and hexamethylenetetramine, HMTA solution without any catalyst, template, or seed layer. An electric soldering iron pen was used to simultaneously heat the substrate and aqueous mixture of the constituents to grow the FZONSs. Field emission scanning electron microscopy images of the samples showed the presence of three-dimensional (3D) flower-shaped nanomorphology. Energy-dispersive X-ray spectroscopy detected the right trace elements in the FZONSs. X-ray diffraction analysis of the as-grown samples confirmed the existence of high purity nanocrystalline hexagonal phase of ZnO with preferred growth along (002) lattice planer orientation. The growth of ZnO nanorods into unified flower-like morphology was interpreted using a nucleation dissolution-mediated recrystallization mechanism. The fabricated FZONSs may provide potential in various applications including advanced catalysts, sensing devices, and solar cells.

Two-Dimensionally Grown Periodic Pores Formed by Anodization of p-Type Silicon in Concentrated NH4F Aqueous Solution: A Platform for Maskless Patterning of Metals by Electrodeposition

Two-Dimensionally Grown Periodic Pores Formed by Anodization of <i>p</i>-Type Silicon in Concentrated NH₄F Aqueous Solution: A Platform for Maskless Patterning of Metals by Electrodeposition

Generalized thermoelastic dissipation in micro/nano-beams with two-dimensional heat conduction

The precise prediction of quality factor based on thermoelastic dissipation (TED) is of great importance for the optimal design of micro/nano-resonators. In this work, employing the nonlocal-dual-phase-lag (NDPL) model and the modified-couple-stress (MCS) model, analytical TED expressions are developed for the first time for micro/nano-beam resonators with two-dimensional (2D) heat conduction along the thickness and length directions. Initially, the governing equation of NDPL coupled thermoelasticity is established, and then the solutions of 2D fluctuation temperature are obtained by utilizing the Galerkin approach. Subsequently, the natural frequency involving the MCS size-dependence length-scale parameter is achieved based on the governing equation of vibration. Finally, analytical generalized TED models are attained according to the energy-definition approach. Three representative types of constraint boundary conditions for the beam resonator, namely, clamped-clamped, clamped-free, and simply supported, are considered in this study. And the present developed TED models are confirmed to possess perfect generality and excellent convergence performance. Moreover, an expression of equivalent thermal relaxation time in the 2D case is introduced and expressed in terms of the length- and thickness-directional thermal relaxation times. Two typical materials, silicon and gold, are selected in the simulation part. The exploration of fluctuation temperature, TED spectra, and thermal relaxation times considering multiple physical effects is conducted as an emphasis. Results reveal that the effect of heat-conduction dimension is crucial for micro/nano-beams with a small ratio of length to thickness, while the significant NDPL effect is dependent upon the ultra-high vibration frequency. Additionally, the MCS size-dependence effect can enhance the natural frequency and improve the quality factor of micro/nano-beam resonators.

A multifunction flow channel switching module for multi-column capillary gas chromatography using silicon pneumatic microvalves

Decades ago, multi-column GC was developed for separating analytes which cannot be separated with a single column by switching the flow channels and introducing them into multiple columns. Formerly, a channel switching system consisted of stainless-tube-type packed columns and multi-port switching valves which were connected by stainless-steel pipes. These systems utilizing packed columns are still widely used today, mainly for gas analysis, especially for refinery gas analysis and natural gas analysis related to oil refining. However, there have been no new development updates in terms of hardware for decades. Since multi-port switching valves are used, there are problems such as the high frequency of valve replacements due to wear of seals, high running costs as well as long downtimes. In recent years, a heart-cutting multidimensional capillary GC using pressure switching devices such as the Deans switch has been put into practical use. Compared to the switching valves, the pressure switching devices have no wearing parts and are maintenance-free. Multi-dimensional capillary GC using the pressure-switching method cannot be applied to the analysis of low-boiling-point gasses because the retention capacity of the capillary column is low and the column inlet pressure is far from the optimum value for switching. Because of this another related factors, it has not been able to completely replace the traditional methods. In this study, an ON/OFF type silicon pneumatic microvalve was designed and fabricated by semiconductor manufacturing technology, and a flow channel switching module was developed by mounting microvalves on a metallic channel plate which is made by diffusion bonding. The flow channel switching module using silicon pneumatic microvalves has a heat resistance of up to 310 °C, can withstand pressures up to 1.5 MPA or more, and a durability that can withstand over 2 million opening and closing operations. In addition, the reproducibility of the gas sample analysis showed good reproducibility values of RSD 0.1% or less for peak areas and RSD 0.01 to 0.04% for retention time. Flow path switching without the use of pressure switching simplifies method development in several ways. For instance, by incorporating the use of valves that can be opened and closed independently, it was possible to integrate several methods such as heart cut, precut, column switching, and backflushing flow path layouts.

Non-process elements in the recovery cycle of six Finnish kraft pulp mills

In this work, the aim was to study the distribution and accumulation of the non-process elements (NPEs) in the recovery cycle of Finnish pulp mills and look at whether the geographical location (North vs. South) correlates with the current Finnish NPE levels. In addition, a comparison to older similar Finnish measurements was made with an attempt to analyze the reasons behind differences in the most typical non-process elements, aluminum (Al), silicon (Si), calcium (Ca), phosphorus (P), magnesium (Mg), manganese (Mn), chlorine (Cl), and potassium (K), taking into account the main elements in the white liquor, sodium (Na) and sulfur (S). The extensive laboratory results gained in this study are from seven sampling points at six pulp mills and present analytical data of metal concentrations. The data obtained presents an update to previous NPE studies. The levels found did not statistically differ between North and South Finland. The NPE levels, apart from phosphorus, found in Finnish pulp mills today have not changed considerably compared to the levels in earlier investigations in the 1990s. In the newest data, the phosphorus concentration was consistently higher in the as-fired black liquor, electrostatic precipitator (ESP) ash, lime mud, and green liquor than in the previous results. In addition, the levels of Al, Si, Ca, P, and Mg in recovery boiler ESP ash were consistently higher compared to the older results. As the mills start to close their systems more, a stronger accumulation of NPEs can be expected, increasing the likelihood of more operational problems in the process. Further understanding of where the NPEs accumulate and how they can be most effectively removed will be valuable knowledge in the future.

An 800V End to End SiC Powertrain to Accommodate Extremely Fast Charging

Widespread adoption of electric vehicles has presented the challenges of short range and prolonged charging time. Going forward, extremely fast charging is the only solution to these problems. However, the typical Silicon power electronics supported 400 V electric vehicle powertrain cannot live up to this challenge. Limitations include the huge cable size, heating of equipment due to high current and user safety, to name a few. In this paper, we have analyzed an 800 V EV powertrain using power electronics based on silicon carbide. In order to implement 800 V powertrain, the complete reconsideration of the electrical system is imperative. In this paper we have presented the implementation of Silicon Carbide based Power electronics to operate an 800 V powertrain and evaluate it against the 800 V Si powertrain. Details of drivetrain, inverter, and auxiliary power units in high voltage charging (Megawatt Level) system are presented in this research.

Effect of coating direction of conductive silicone polymer on the electrical and mechanical properties of silicone-embedded conductive textiles

We propose an elegant method for fabricating mechanically robust and electrically conductive composite textiles for next-generation smart clothing by controlling coating direction of the silicone polymer. A typical additive-type silicon polymer containing conductive fillers was coated on the pristine fabric in the wale and course direction. The conductive textile coated in the wale direction showed better elastic recovery than that coated in the course direction. Moreover, the conductive fabrics coated in the wale direction exhibited small cracks and low electrical resistance due to the deep penetration of conductive silicone polymer, leading to the construction of stable conductive network.