Tunnel magnetoresistance (TMR) sensors are rapidly gaining attention for magnetic field sensing applications owing to their high sensitivity, low power consumption, small size, and low cost. Their metallic, non-semiconductor construction makes them excellent candidates for use in the harsh environments present in nuclear and space applications. In this work, the impacts of electron irradiation on the magnetoelectric transport properties of the two types of TMR sensors were investigated. The electron fluence ranged from 0 Mrad(Si) to 400 Mrad(Si). No significant evidence of degradation of the sensor characteristics, such as sensitivity, resistance, TMR ratio and detectivity, was observed. Our results verify the robustness and adaptability of the TMR sensors.
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