The highly transparent conducting cadmium oxide (CdO) films were prepared by jet nebulizer spray pyrolysis. Characterization and optimization of CdO films have been scrutinized using various techniques such as X-ray diffraction (XRD) pattern, scanning electron microscope (SEM), energy dispersive analysis by X-ray (EDAX) spectroscopy, Atomic force microscopy (AFM), ultraviolet visible (UV-Vis) spectroscopy, hall Effect and current–voltage (I–V) characteristics. The sample prepared at 400°C with 4ml and 0.20M of volume and concentration of the precursor solution respectively have the transmittance of about 70% with a band gap of 2.37eV and the resistivity was found to be a minimum of 3.38×10−3Ωcm. The XRD, SEM and AFM studies have implied the presence of CdO nanocrystallites with cubic structure and having smooth surface. The short circuit current (Isc)=5.90mA/cm2 and open circuit volatge (Voc)=429.3mV values were established to be the maximum for the cell made with CdO films at 400°C. The fill factor (FF)=0.32 and conversion efficiency η=0.8% was also maximum for this solar cell. The low fill factor and efficiency might be due to the formation of excess silicon dioxide (SiO2) at the CdO/p-Si interface due to reaction between CdO and Si at 400°C.
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