Transparent Amorphous Oxide Semiconductors Research Articles

68.3: Invited Paper: Transparent Amorphous Oxide Semiconductors for High Performance TFT

AbstractThis paper briefly describes unique electron transport properties of transparent amorphous oxide semiconductors (TAOS) for TFT performance along with our material design concept. Emphasized is essential importance of indium ion for emergence of high field effect mobility on the basis of recent results on electronic structure calculation on amorphous InGaZnO4.

A General Route to Printable High‐Mobility Transparent Amorphous Oxide Semiconductors

A General Route to Printable High‐Mobility Transparent Amorphous Oxide Semiconductors

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H) and organic semiconductors have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material--namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)--for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V(-1) s(-1), which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6-9 cm2 V(-1) s(-1), and device characteristics are stable during repetitive bending of the TTFT sheet.