Transient Annealing Research Articles

RNA-directed peptide synthesis across a nicked loop.

Ribosomal translation at the origin of life requires controlled aminoacylation to produce mono-aminoacyl esters of tRNAs. Herein, we show that transient annealing of short RNA oligo:amino acid mixed anhydrides to an acceptor strand enables the sequential transfer of aminoacyl residues to the diol of an overhang, first forming aminoacyl esters then peptidyl esters. Using N-protected aminoacyl esters prevents unwanted peptidyl ester formation in this manner. However, N-acyl-aminoacyl transfer is not stereoselective.

Nanoscale core-shell structure and recrystallization of swift heavy ion tracks in SrTiO3.

It is widely accepted that the interaction of swift heavy ions with many complex oxides is predominantly governed by the electronic energy loss that gives rise to nanoscale amorphous ion tracks along the penetration direction. The question of how electronic excitation and electron-phonon coupling affect the atomic system through defect production, recrystallization, and strain effects has not yet been fully clarified. To advance the knowledge of the atomic structure of ion tracks, we irradiated single crystalline SrTiO3 with 629 MeV Xe ions and performed comprehensive electron microscopy investigations complemented by molecular dynamics simulations. This study shows discontinuous ion-track formation along the ion penetration path, comprising an amorphous core and a surrounding few monolayer thick shell of strained/defective crystalline SrTiO3. Using machine-learning-aided analysis of atomic-scale images, we demonstrate the presence of 4-8% strain in the disordered region interfacing with the amorphous core in the initially formed ion tracks. Under constant exposure of the electron beam during imaging, the amorphous part of the ion tracks readily recrystallizes radially inwards from the crystalline-amorphous interface under the constant electron-beam irradiation during the imaging. Cation strain in the amorphous region is observed to be significantly recovered, while the oxygen sublattice remains strained even under the electron irradiation due to the present oxygen vacancies. The molecular dynamics simulations support this observation and suggest that local transient heating and annealing facilitate recrystallization process of the amorphous phase and drive Sr and Ti sublattices to rearrange. In contrast, the annealing of O atoms is difficult, thus leaving a remnant of oxygen vacancies and strain even after recrystallization. This work provides insights for creating and transforming novel interfaces and nanostructures for future functional applications.

Fission Gas Release from Irradiated UO2+x During Transient Annealing

Oxidation of UO2 fuel under off-normal and normal reactor conditions occurs when fuel cladding fails, thereby allowing steam/water to enter the fuel rod. The steam/water will react with the fuel to produce UO2+x thus releasing hydrogen, with x standing for the amount of interstitial oxygen ions above the stoichiometric value.In this technical note the impact of fuel oxidation on fission gas release (FGR) is modeled and discussed. The classical diffusion equation is used to describe migration and release of fission product gas (Xe) in UO2+x under time-varying postirradiation annealing conditions. We assume that the main quantity affected by fuel oxidation is the effective diffusivity of fission gas. Fuel oxidation enhances the diffusivity as a function of x in UO2+x in a parabolic fashion for 0.005 ≤ x ≤ 0.12 in the temperature range of 1000 ≤ T ≤ 1600 K. We first benchmark our model against an annealing test in which for x = 0.004 the Xe release fraction was measured as a function of time (temperature) during annealing. Furthermore, we apply the model to simulate a series of postirradiation annealing tests on UO2+x fuel, in which FGR fractions were measured for a given thermal ramp history in the range 0.00 ≤ x ≤ 0.66. The results of our computations in the range 0.004 ≤ x ≤ 0.20 show good agreement with measurements.

Femtosecond Optical Annealing Induced Polymer Melting and Formation of Solid Droplets.

Interaction between femtosecond laser pulses with polymeric thin films induced transient optical annealing of the polymer molecules. Melting of the polymer films took place during the transient annealing process, so that a solid-liquid-solid phase transition process was observed. Ultrafast cooling of the melting polymer produced solidified droplets. Microscopic and spectroscopic characterization revealed that the polymer molecules were rearranged with preferable H-aggregation to reach the lowest formation energy during the melting process. Intermolecular coupling was enhanced due to the modified molecular arrangement. This observation of melting of polymeric semiconductors due to the interaction with femtosecond light pulses is potentially important for better understanding laser-matter interactions and for exploring organic optoelectronic devices through special material processing.

Self-organized nanostructure formation on the graphite surface induced by helium ion irradiation

The effects of helium ion irradiation on the graphite surface are studied by employing a plasma focus device. The device emits helium ion pulse having energies in the range of a few keV to a few MeV and flux on the order of 1025 m−2 s−1 at 60 mm axial position from the anode tip. The field emission scanning electron microscopy confirms the formation of multi-modal spherical and elongated agglomerated structures on irradiated samples surface with increase in agglomerate size with increasing number of irradiation shots. The transient annealing in each irradiation was not enough to cause the Oswald ripening or sintering of particles into bigger particle or crystal size but only resulted in clustering. The atomic force micrographs reveal an increase in average surface roughness with increasing ion irradiation. The Raman study demonstrates increase in disordered D peak along with reduced crystallite size (La) with increasing number of irradiation shots.

Order/Disorder Dynamics in a Dodecanethiol-Capped Gold Nanoparticles Supracrystal by Small-Angle Ultrafast Electron Diffraction.

The design and the characterization of functionalized gold nanoparticles supracrystals require atomically resolved information on both the metallic core and the external organic ligand shell. At present, there is no known approach to characterize simultaneously the static local order of the ligands and of the nanoparticles, nor their dynamical evolution. In this work, we apply femtosecond small-angle electron diffraction combined with angular cross-correlation analysis, to retrieve the local arrangement from nanometer to interatomic scales in glassy aggregates. With this technique we study a two-dimensional distribution of functionalized gold nanoparticles deposited on amorphous carbon. We show that the dodecanethiol ligand chains, coating the gold cores, order in a preferential orientation on the nanoparticle surface and throughout the supracrystal. Furthermore, we retrieve the dynamics of the supracrystal upon excitation with light and show that the positional disorder is induced by light pulses, while its overall homogeneity is surprisingly found to transiently increase. This new technique will enable the systematic investigation of the static and dynamical structural properties of nanoassembled materials containing light elements, relevant for several applications including signal processing and biology.

Induced thermo-mechanical reliability of copper-filled TSV interposer by transient selective annealing technology

Managing the stability of related processes in the integrated manufacturing of three-dimensional integrated circuits (3D-ICs) remains unresolved, especially with regard to the thermo-mechanical behavior of copper filled through silicon via (TSV) interposer during annealing. In this work, transient annealing is successfully applied on the filled copper using only one form of selective heating technology. To address the integration problem, transient thermo-structural coupling analysis using a nonlinear finite element simulation is proposed. Compared with the experimental data, the proposed simulation is found to be highly reliable. Analytical results show that temperature decreases from the top surface of the TSV to other regions within a silicon-based TSV interposer. Stress-induced fracture is common among bonded films, thereby worsening the subsequent mechanical reliability of 3D-IC devices. Moreover, the extent of keep-out zone induced by residual stress of Cu-filled TSV is also defined through the simulation-based mobility gain of nano-scaled devices. In accordance with the results of this investigation, an improvement can be obtained by optimizing the fabrication parameters during annealing. The proposed technology provides a high throughput and reliable processes in TSV manufacturing.

High mobility amorphous InGaZnO4 thin film transistors formed by CO2 laser spike annealing

Amorphous InGaZnO4 (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics with current research focused on improving the mobility and stability. In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO2 laser. For peak annealing temperatures near 430 °C and a 1 ms dwell, TFTs exhibit saturation field-effect mobilities above 70 cm2/V-s (Von ∼ −3 V), a value over 4 times higher than furnace-annealed control samples (∼16 cm2/V-s). A model linking oxygen deficient defect structures with limited structural relaxation after the LSA anneal is proposed to explain the observed high mobility. This mobility is also shown to be comparable to the estimated trap-free mobility in oxide semiconductors and suggests that shallow traps can be removed by transient thermal annealing under optimized conditions.

Two-stage Laser Thermal Processing of Nanoparticle Inks on Flexible Substrates for High Performance Electronics

ABSTRACTZinc oxide is a promising semiconductor film for active devices on flexible substrates, and synthesis routes using nanoparticle inks enable greater variety of applications. We introduce and characterize a two-step transient laser annealing process to create fully densified zinc oxide films from nanoparticle ink precursors. A low temperature sub-millisecond calcining step to remove solvent and organic stabilizing ligands was followed by a high-temperature pulsed laser sintering step to form densified 50-100 nm thin films with resistivities of 10-1 to 10-3 Ω-cm. Film microstructures can be varied between crystalline and amorphous without significant film damage by adjusting the fluence of the high-temperature sintering step. These processes would be compatible with a variety of nanoparticle species, deposition methods, and patterning methods, including roll-to-roll processing paradigms.

Thermal and ion induced annealing of nanocrystalline ZnO thin film deposited by atom beam sputtering

ZnO thin films were deposited using atom beam sputtering and their modifications have been shown by two processes: (a) thermal annealing of ZnO thin films in oxygen and (b) athermal annealing by irradiation of these films by swift heavy ions (SHIs) in a high vacuum chamber. The as-deposited films showed the nanocrystalline nature with a preferred orientation along the c-axis of the hexagonal structure as revealed by x-ray diffraction (XRD) and Raman spectra. The influence of the thermal annealing and athermal annealing on the structural and surface modifications of these thin films were investigated. XRD and Raman spectroscopy confirmed the improvement in the crystallinity of ZnO thin film by both thermal annealing and SHI irradiation. The Zn–O bonding was confirmed by Fourier transform infrared spectroscopy and the interpretation of IR spectra corroborated the XRD and Raman results. Surface morphology was investigated by atomic force microscopy. The AFM study of the films implied no significant change in the roughness of the films in both types of annealing conditions. It was concluded that the modification of nanocrystalline ZnO thin film could be possible by both thermal and athermal annealing. Results indicate that transient annealing by SHI irradiation induces the highly textured c-axis oriented ZnO thin film for device applications, comparable to those of high temperature annealing.

Effect of transient annealing on patterned CoFeB‐based magnetic tunnel junctions

AbstractIn this study, the transient annealing effect on the switching behavior of microstructured Co60Fe20B20‐based magnetic tunnel junctions has been studied through magnetoresistacne measurements (R‐H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta (20)/ PtMn (15)/ CoFeB (3)/ Al (0.7)‐oxide/ CoFeB (2)/ Ru (8)/ Ta (40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre‐set temperatures ranging from 100 to 400 °C for only 5 minutes in the absence of any external magnetic field. The vortex‐like reverse of free layer in as‐etched MTJ evidently changes to single‐domain‐like reverser after 200∼250 °C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 °C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 °C annealing and results in less damage at temperature of 350 °C and 400 °C. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Critical currents density and current loops range in MgB 2 thin layers obtained by the technique of ions implantation followed by pulsed plasma transient annealing

We report on the measurements of transport and magnetic properties of MgB 2 thin films obtained using ion implantation technique followed by irradiation with high intensity pulsed plasma beams. To get detailed information about the process of current percolation in a superconducting phase, about current transport and size of the current loop, we used the method of reverse leg of magnetisation loop. On the basis of this method we have found that the technique of implantation allowed one to obtain a continuous layer of MgB 2 superconductor characterized by the critical current density of J c = 1.25 × 10 5 A/cm 2.

Superconducting and electrical properties of Mg–B structures formed by implantation of magnesium ions into the bulk boron followed by pulse plasma treatment

Superconducting regions of magnesium diboride (MgB 2) on magnesium substrate were formed by the combined methods of ion implantation and transient annealing using three different ion fluences and three different energy density of Ar plasma pulses. The samples were characterized by Rutherford back scattering (RBS) and superconductivity detection techniques. The results of these characterizations are presented and discussed. The highest critical temperature observed T C=33.8 K.

Monte Carlo Simulation of Three-Dimensional Nonisothermal Grain-Microstructure Evolution: Application to LENS Rapid Fabrication

A stochastic three-dimensional (3-D) model for grain-microstructure evolution during transient nonisothermal annealing of metallic materials is developed, validated, and applied to the LENS (Laser-Engineered Net Shaping) advanced rapid fabrication process. The model is based on the assumption that the main driving force for microstructure evolution is the reduction in energy contribution arising from the grain boundaries. A temperature-dependent grain-boundary mobility factor is introduced into the expression for the transition probability in order to account for nonisothermal effects, such as those induced by the rastering laser during LENS-based manufacturing. The grain-boundary mobility factor and its temperature dependence are determined using the available experimental isothermal-annealing data. The simulation of grain growth (under nonisothermal annealing conditions encountered in the LENS process) is carried out by coupling a Monte Carlo method for microstructure evolution with a finite difference-based solution to the three-dimensional (3-D) transient energy equation. In response to the computational challenges of the simulations, a highly efficient interprocessor communications methodology is developed, which greatly reduces the simulation time on parallel computers. The results obtained show that under isothermal annealing conditions, the kinetics of grain growth is governed by a temporal power-law behavior and that, after an initial transition period, the grain-size distribution (normalized with respect to the average grain size) becomes time invariant. Furthermore, the application of the model to the LENS process is found to enable establishment of the relationships between process parameters (the laser power, beam rastering velocity, etc.) and the microstructure (grain size distribution, depth of the heat-affected region, etc.) of the deposited material.

Fission-Product Release during Transient Heating of Irradiated CANDU Fuel

A direct-electric-heating (DEH) apparatus was developed to heat Zircaloy-sheathed irradiated fuel samples. The apparatus was used in the temperature gradient 1 (TG1) experiment to measure fission product releases from Zircaloy-sheathed irradiated Canada deuterium uranium (CANDU) UO2 fuel samples during fast temperature ramps in the presence of a radial temperature gradient in the fuel. The ohmic heating of the UO2, combined with surface heat removal by the surrounding helium coolant flow, produced a radial temperature profile that approximates the profile for fission- or decay-heated fuel.The 11 tests conducted in the TG1 experiment simulated various transient heating rates and high-temperature annealing conditions. The results indicate that the DEH technique can produce large radial temperature gradients and rapid heating rates. Ceramographic examinations showed columnar grain growth and evidence of UO2 melting. Chemical interactions between the tungsten electrodes and the UO2 were also observed. Releases of krypton, and release and redistribution of cesium were measured. Fission product release and redistribution results from some of the tests are also reported.The Kr measurements indicated that the amount of Kr released was highly dependent upon the peak dwell power: The higher the dwell power, the higher the cumulative release. The redistribution of cesium was mapped using emission gamma radiography of the fuel specimen after the test. Cesium was released from the center of the fuel sample where temperatures were the highest. A well-defined area was confirmed near the center where the Cs activity was depleted. The measured Kr releases were in good agreement with the Cs migration and release.

Effects of heating rate and surface oxidation on magnetic induction of 3% Si–Fe strip

The effects of heating rate and surface oxidation on magnetic induction of thin-gauged 3% Si–Fe strips have been investigated. Magnetic induction increased with increasing final annealing temperature. Before and after 1150 °C, the planar orientation of grains shifted from (100)[011] to (110)[001], resulting in magnetic induction higher than 1.90 T. Magnetic induction after final annealing was higher in case of a faster heating rate. This is because enough time for growth of (110) grains is given in the case. Irrespective of transient annealing temperature, magnetic induction after final annealing was mostly higher than 1.90 T. A maximum, 1.97 T, was obtained at a transient annealing temperature of 800 °C. This is because iron oxide formed at 800 °C inhibited the surface-energy-induced selective growth of (100)[011] grains during heating up to 1200 °C.

In-Situ Carbon Content Adjustment in Polysilazane Derived Amorphous SiCN Bulk Ceramics

The present paper is concerned with the in-situ carbon content adjustment in amorphous bulk silicon carbonitride (SiCN) ceramic matrices prepared by the polymer to ceramic transformation of cross-linked and compacted poly(hydridomethyl)silazane powders. Heat treatment in inert (Ar) or reactive atmosphere (ammonia, or mixed Ar/NH 3 with different volume ratio of ammonia) was used for carbon content adjustment. Isothermal annealing steps in Ar and/or mixed atmospheres at various intermediate temperatures were also included into the pyrolysis schedule (i) to adjust the final carbon content, (ii) to control outgassing of low molecular reaction products like methane or hydrogen from the matrix during polysilazane decomposition and thus (iii) to avoid cracking of the pressed polymer powders. Optimal annealing temperature for carbon content adjustment was found to be in the range between 500 and 550°C. Increasing NH 3 contents from 10 to 50 vol% in the pyrolysis atmosphere as well as enhanced transient annealing temperature and time promote carbon reduction. In contrast intermediate isothermal annealing in Ar at 500 up to 600°C results in pronounced formation of Si–C bonds and in increased carbon contents after the final pyrolysis process. Depending on the pyrolysis conditions, flawless bulk specimens with carbon contents ranging from 0·3 up to 16·2 wt% were obtained. Different possible chemical reactions are considered to explain the generation of the particular Si(C)N compositions found. ©

Annealing effects in light-emitting Si nanostructures formed in SiO 2 by ion implantation and transient preheating

A dose of 1.6 × 10 17 cm −2 Si + ions was implanted in 500-nm-thick SiO 2 layers with subsequent transient annealing at different temperatures. After the highest temperatures light-emitting Si nanoclusters were found that were formed in SiO 2. Then all the layers were subjected to isochronal (30 min) furnace anneals and their properties were controlled by room temperature photoluminescence (PL) and Raman spectroscopy. The PL intensity from Si nanocrystal-containing layers progressively decreased with an increase in the anneal temperature ( T a) up to 800–900°C, but rapidly arose again in the T a range of 1000–1150°C. Raman scattering has shown that Si nanocrystals vanish at T a ∼ 800°C and that the amorphous silicon signal reappears. When the initial transient annealing failed to form Si nanocrystals, the furnace heat treatment at T a < 700°C gave rise in PL intensity followed by its drop at T a ∼ 800–900°C and a strong increase at T a ∼ 1000–1150°C. The disappearance of Si nanocrystals and PL is considered to result from low stability of the smallest crystallites quenched in SiO 2 by transient processing. When Si nanocrystals were not induced by transient preheating, the increase in T a supposedly led to percolation-like formation of Si inclusions, their transformation to amorphous Si phase nanoprecipitates and, finally, to Si nanocrystals. For all the samples the formation of nanocrystals at T a = 1000–1150°C was provided by the increase in their stability due to diffusion-limited grain growth. The results obtained are considered to support the idea of quantum-confined origin of PL.

Effect of Ni-Si Disordered Layer on the Electronic Properties of Ni Silicide Barrier Contacts on Silicon

AbstractChanges in current transport and barrier heights of Ni-Si contacts as it undergoes atomic rearrangement and redistribution of charges under transient light annealing is studied with time resolution of 0.6 msec. Formation of an intermixed Ni-Si disordered layer by Ni-diffusion is shown by Auger data. Intrinsic barrier height of 0.7 eV increases to 0.82 eV as the spatial extent, disorder and density of Ni atoms which introduce new localized ststes at Ev+0.7 eV increases. Electronic properties of silicide contacts are affected by local interfacial bonds than by the characteristic of later grown silicide.

Novel effects of heating rate on the activation/recrystallization of boron-implanted Si substrates

The effects of heating rate on the recrystallization and dopant activation, for samples under different implant conditions, have been studied. The as-implanted samples were annealed, at various heating rates, to different preset temperatures but zero holding time. Factors associated with the dopant activation have been evaluated to develop a proper activation mechanism, thus correlating with the experimental results. In the transient annealing, a higher heating rate facilitates the dopant activation via a lower effective activation energy, while lower heating rates inherently own longer effective activating times. Implant conditions strongly determine the degree, impacting the dopant activation, of respective factors. In addition, higher heating rates led to better Si recrystallization.