The authors present a method for high aspect ratio nanopatterning of high density (1010pores∕cm2) self-assembled porous alumina membrane pattern into thermally grown SiO2 on silicon. The pattern transfer is accomplished by irradiating through 2μm thick porous alumina membrane with swift heavy ions (4MeV Cl2+). Ions passing through the nanopores in the mask at a fairly high fluence (typically 1014ions∕cm2) are impinging on the substrate and creating a continuous volume of overlapping ion tracks of damage. The damage is sufficient to be selectively etched by HF vapor from an aqueous HF solution. From an alumina mask with pores of 70nm diameter, a pattern of pores of 77nm in diameter and the same distance of 100nm between the centers of the pores was transferred. The deepest observed etched pores were 355nm, giving an aspect ratio of 5, which is up to 40 times larger compare to earlier work where HF wet etching was used. This ion track lithography technique shows a potential to produce nanostructures with ev...