Metal nanowire-based transparent electrodes have emerged as promising alternatives to conventional indium tin oxide (ITO) due to their excellent electrical conductivity and mechanical flexibility. However, weak adhesion between metal nanowires and conventional substrates results in poor mechanical stability. Moreover, random silver nanowire (Ag NW) nanostructures in conventional electrodes leads to high junction resistance and light scattering, reducing conductivity and transparency. Herein, we develop highly stable and flexible transparent electrodes by embedding micromesh-structured Ag NWs in hydroxyl-rich cellulose. Benefiting from strong coordination bonding between the Ag NWs and hydroxyethyl cellulose (HEC) and the embedded micromesh structure, the electrode displays superior photoelectric performance (5 Ω/sq at 83.5% transmittance) and robust mechanical stability (bending, twisting, folding, and peeling off). Furthermore, we assembled an electro- and thermo- dual responsive chromatic device, enabling rapid heat generation and multicolor switching. We believe that our work provides an innovative approach to fabricating high-performance electrodes for optoelectronic devices.

In this study, SnO₂/SnS₂ heterojunctions were successfully constructed in situ via a low-temperature solid-phase method using synthesized tin oxide hydroxide sulfate precursors and thiourea as raw materials. During heating, the precursors progressively transformed into SnS₂/SnO₂ heterojunctions while retaining their agglomerated structure. The regulatory role of NH₄Cl additive in product phase formation was systematically investigated. Furthermore, the structure-property relationship between microstructure, optical characteristics, and photocatalytic performance of the composite was elucidated. Phase and microstructure characterization (XRD, SEM, TEM, XPS, Raman) confirmed that introducing NH₄Cl promoted the close integration of SnO₂ and SnS₂ phases and heterojunction formation through a chemical vapor transport mechanism. The composite exhibited a hierarchical nanostructure, suitable mesoporous characteristics, and significant interfacial electron interaction. UV-Vis absorption spectroscopy and photoluminescence analysis indicated that the heterojunction effectively broadened the light response range and facilitated the separation of photogenerated carriers. Photocatalytic degradation experiments of MO demonstrated that the as-prepared SnS₂/SnO₂ composites exhibited good performance under both UV and visible light. The optimized composite (S2) achieved complete degradation of MO within 6min under UV light and within 20min under visible light. Free-radical trapping experiments confirmed that superoxide radicals (•O₂⁻) and hydroxyl radicals played dominant roles in the photocatalytic process.

Proton exchange membrane water electrolysis (PEMWE) has emerged as one of the most promising technologies for large hydrogen (H 2 ) production from renewable electricity. However, using iridium (Ir) in large quantities is a roadblock in the widespread expansion of this technology. One strategy to reduce Ir loading in the anode is the use of an electroceramic support material. This study examines the structural and electrochemical evolution of Ir on antimony tin oxide (Ir/ATO) anodes under extended operation. Initial electrochemical performance demonstrates that low‐loaded Ir/ATO (0.2 mg Ir cm −2 ) can achieve a competitive current density of 2.82 A cm −2 at 2 V, comparable to state‐of‐the‐art PEMWE catalysts. However, extended operation leads to a minimal but gradual decline in catalytic activity. Postmortem analysis reveals changes in porosity and pore distribution, while atomic force microscopy (AFM) studies indicate ionomer degradation in the anode catalyst layer (ACL). Transmission electron microscopy (TEM) reveals the dissolution of oxides of Sb and Sn from the support material. Furthermore, X‐ray photoelectron spectroscopy (XPS) and X‐ray absorption spectroscopy (XAS) confirmed the oxidation of metallic Ir (Ir 0 ) to IrOx x ·OH y species before and after operation. Understanding degradation in low‐Ir PEMWEs is key to improving long‐term stability. These results highlight the need for support stabilization and catalyst structuring to ensure durable performance.

Simple fabrication of green materials from tin dioxide and biocarbon from cashew residue as anodes for advanced Li-ion batteries

Hydrothermal Synthesis of Sn(Sb)O2 Nanoparticles and Their Electrophoretic Coating on Commercial Pure Titanium for Electrocatalytic Degradation of Methylene Blue

Conjugated molecules construct efficient charge transport channels in tin oxide for carbon-based all inorganic perovskite solar cells prepared in air

Enhancing infrared-shielding property of antimony-doped tin oxide nanoparticles by Sb3+/Sb5+ co-doping precusor

Enhanced performance of silicon heterojunction solar cells with double-layer structure of p-side indium tin oxide film

Synergistically engineered mesoporous tin oxide for ultra-sensitive hydrogen detection at the parts per billion level

Plant extract-mediated synthesis of rods-like tin oxide loaded on graphene oxide and its application for electrochemical sensor of bisphenol-A

Compact and uniform electron transport layers with additional functionality can effectively suppress carrier recombination and facilitate charge extraction. To regulate the preparation process and functionalize tin oxide (SnO2), potassium citrate is added into SnO2 solution to inhibit aggregation of SnO2 precursors. The incorporated carboxyl functional groups can improve film coverage and reduce interface traps. The additional K+ ions will penetrate into perovskite films and impede the formation of Frenkel defects to promote rapid charge separation and extraction. The functionalized SnO2 with high crystallinity can also improve fusion between nanocrystals and reduce grain boundaries. Enhanced electrical properties for the optimized SnO2 are realized using potassium citrate compared to single SnO2 due to the increased electron mobility. The conformal SnO2 film including carboxyl functional groups also forms a shielding layer against oxygen and water vapor permeation. A high power conversion efficiency of 23.95% (a VOC of 1.166 V, a JSC of 24.90 mA cm−2, and an FF of 0.825) is achieved for the champion device. The optimized device also shows the highly enhanced light/thermal stability. In addition, the whole charge dynamics (separation, extraction, and recombination) is discussed. Additionally, a simple strategy for scalable fabrication and commercialization of perovskite photovoltaics is provided based on the spin-coated SnO2 with functionality.

Photovoltaic devices based on inorganic perovskites, such as CsPbI3, are of great interest for applications, either as a single-junction or in Si/perovskite tandem devices due to their favorable bandgap. Such applications often require the deposition of the perovskite active layer on patterned indium tin oxide (ITO) layers. Yet, in many instances, the deposition of CsPbI3 on structured ITO leads to the almost instantaneous degradation of the perovskite layer during film formation. In this work, we demonstrate how the microstructural and topographical features of patterned ITO substrates influence the degradation of CsPbI3 into its nonperovskite δ-phase. By comparing two methods for patterning ITO, i.e., laser-patterning and chemical etching, we demonstrate that perovskite degradation consistently initiates at laser-formed terminations. We utilize scanning electron microscopy, electron backscatter diffraction, and confocal microscopy to prove that even nanoscale surface steps and microcrater edges, approximately 50 nm in height, are sufficient to trigger localized δ-phase formation. These regions exhibit distinct thermal and structural behavior, including recrystallization and grain coarsening. Our study provides a mechanistic understanding of how substrate morphology drives phase instability during film growth, paving the way for substrate engineering strategies to suppress phase instabilities that occur during the fabrication of inorganic perovskite-based optoelectronic devices.

Introduction: Various raw materials and methods are recommended for the preparation of Vanga Bhasma (VB). So there is need to analyze the VB prepared using Churnodaka (lime water), Apamarga Panchanga (Achyranthes aspera pennel), and aloe vera juice for Shodhana (mandatory preliminary process), Jarana (polling), and Marana (calcination process of making Bhasma) and compare with previous studies. Material and Methods: VB was prepared using Shodhana, Jarana, washing of Jarita Vanga and Marana procedures. The Vanga at different stages of Marana were analyzed using XRF, XRD, and EDAX-SEM. Results: XRD data reveals that the crystals present in the raw Vanga sample were converted to Tin (II) oxide (Romarchite) and Tin (IV) oxide (Cassiterite) during the Jarana process. The XRD results also indicate that the VB sample only contains crystals of Tin (IV) oxide. The EDAX report shows an increase in the percentage of Oxygen and a decrease in the percentage of Tin from the raw Vanga to the final VB. Furthermore, the particle size of the crystals was reduced from 239 nm in the raw Vanga to 45.8 nm in the VB. Conclusion: The Jarana process may necessary to initiate the conversion of raw tin to tin oxide and makes Vanga to withstand the strong heat required during the Puta process. Washing of the Jarita Vanga is helpful to remove any alkaline material introduced from the herbal media. Marana may be necessary for further reduction of the particle size to the nano scale, along with the complete conversion of tin to Tin (IV) oxide.

In this study, indium tin oxide (ITO) and nitrogen-incorporated ITO (ITON) thin films with thicknesses of 57, 116, and 173 nm were deposited on glass substrates using DC magnetron sputtering. The effects of nitrogen incorporation, film thickness, and thermal annealing on the structural, optical, and electrical properties were investigated. X-ray diffraction (XRD) analysis revealed that ITON exhibited partial crystallization in the as-deposited state and influenced the preferred crystal orientation after annealing, with ITO favoring (400) and ITON favoring (222). Both materials demonstrated high optical transparency (>70%) in the visible range, with ITON exhibiting higher transmittance, particularly at thickness of 173 nm (84.79% after annealing). The optical bandgap decreased with increasing thickness but increased after annealing, with ITON maintaining consistently higher values. Electrical measures indicated a thickness-dependent resistivity trend. Un-annealed ITO showed a systematic sheet resistance decrease from 546.4 to 255.83 Ω/square, whereas annealed ITO exhibited a minimum sheet resistance of 208.5 Ω/square at 173 nm. ITON films initially displayed unmeasurable sheet resistance at lower thicknesses, but after annealing, sheet resistance decreased systematically from 1789.0 to 447.23 Ω/square. Despite the low nitrogen concentration (0.01%), its incorporation significantly influenced the structural and electrical properties of the films. These findings provide insights into optimizing ITON thin films for advanced optoelectronic applications.

Regulating the generation, migration, and separation of photogenerated carriers is of great importance for improving the capability of photoelectrodes, which also provides advantages for construction of high-performance photoelectrochemical (PEC) biosensors. Herein, we report an excellent photoelectrode with a synergistic enhancement effect of piezoelectricity and surface plasmon resonance. The photoelectrode, named AuNP/CdSNR/ITO, was fabricated via in situ growth of hexagonal wurtzite cadmium cesium nanorod (CdSNR) arrays on indium tin oxide (ITO) using a hydrothermal method followed by the photodeposition of gold nanoparticles (AuNP). Mechanism study reveals that the synergistic enhancement effect on AuNP/CdSNR/ITO greatly enhances the photoelectron conversion efficiency and facilitates the efficient separation of photogenerated carriers, thus manifesting an ultrahigh photocurrent of 1.06 mA. By virtue of target-triggered 3,3',5,5'-tetramethylbenzidine dication etching technology, a split-type PEC immunosensor was constructed using AuNP/CdSNR/ITO as a proof of concept for highly sensitive and precise detection of carbohydrate antigen 199 with a low detection limit of 5.6 × 10-5 U mL-1. The study offers insight into improving photoelectrode property through the regulation of the transport process of photogenerated carriers and also developing high-performance biosensors for more biomolecules.

Serodiagnosis of antibodies against the foot-and-mouth disease virus (FMDV) nonstructural protein 3ABC is essential for surveillance of infection and vaccination status. Here, we report a single-probe dual-readout peptide-based biosensor that combines electrochemical and fluorescence readouts for rapid and selective detection of anti-3ABC antibodies directly from serum. FMDV-inspired peptides, site-specifically labeled with 5(6)-carboxyfluorescein (FAM) or 7-methoxycoumarin-4-acetic acid, were immobilized on indium tin oxide electrodes via click chemistry. Antibody binding to the peptides produced a signal-off response in both modalities. FAM-probe electrodes exhibited superior performance, achieving detection limits of 0.38-1.14 (electrochemical) and 0.49-1.49 ng mL-1 (fluorescence) with <3% interference from nontarget antibodies. In validation with 36 bovine, ovine, and caprine sera, the platform distinguished infected from vaccinated animals with 93 ± 2% accuracy (electrochemical) in only 30 min. This low-cost dual-readout sensor demonstrates a broadly adaptable strategy for high-accuracy serodiagnostics, provided that suitable redox-active fluorophores and antibody-recognizable peptide epitopes are employed, with potential for portable bioanalytical devices.

Synthesis of Nano Sensing Film of Stannic Oxide and Use of Split IDT for SAW Gas Sensor for Dichloromethane Gas Detection

Achieving high efficiency perovskite light-emitting diodes (PeLEDs) requires transparent electrodes that combine low sheet resistance, high optical transmittance, and atomically smooth morphology. Conventional crystalline indium tin oxide (ITO) electrodes, however, necessitate high-temperature deposition above 300°C or post-annealing, resulting in grain boundaries and rough surfaces that are incompatible with flexible substrates and low-temperature device architecture. Here, we report room-temperature processed, grain boundary-free Sn excess doped indium tin oxide (SE-ITO) electrodes fabricated via RF-RF co-sputtering of In2O3 and SnO2. Through the heavy incorporation Sn4+ dopants (19 wt.%) and optimized oxygen-vacancy engineering, the amorphous SE-ITO achieves an exceptional combination of low sheet resistance (10 Ω sq-1) and high visible transmittance (85%), comparable to thermally annealed crystalline ITO. When implemented as the transparent anodes in green PeLEDs, the amorphous SE-ITO films enable a peak external quantum efficiency of 17.5% and a maximum luminance of 1860cd m-2, outperforming devices using commercial crystalline ITO (16.3%, 1690cd m-2). These results establish fully amorphous, room-temperature SE-ITO electrodes as a viable alternative to crystalline counterparts, offering a new pathway toward flexible, high-efficiency, and thermally compatible PeLED technologies.

Tin oxide thin films were deposited by the pulsed laser ablation of a metallic Sn target at different oxygen partial pressures, ranging from 10 to 40 mTorr. Langmuir plasma probe diagnostics were performed to evaluate the effect of pressure on mean kinetic energy and density of Sn ions. It was observed that the mean kinetic energy decreased from 34 to 11 eV while the ion density decreased from 10 to 1.5 × 1013 cm−3 with increasing pressure. The films exhibited enhanced optical transmittance, increasing from 10% for the sample grown at 10 mTorr to 70% for the film deposited at 40 mTorr. Furthermore, higher deposition pressures led to wider band gap values, increasing from 1.6 to 3.9 eV for direct transitions and from 2.2 to 3.2 eV for indirect transitions with increasing oxygen pressure. These trends are consistent with progressive oxidation and partial transparency characteristic of semiconducting tin oxides. Structural characterization, based on X-ray diffraction, revealed predominantly metallic Sn diffraction peaks across the entire oxygen pressure range. However, despite this structural signature, the films exhibited optical and electronic properties characteristic of tin oxides. This apparent discrepancy suggests the coexistence of metallic nanoparticles embedded within an amorphous or nanocrystalline SnO2/SnOx matrix. These findings provide insights into the non-equilibrium oxidation dynamics of tin and the formation of metastable SnOx phases during pulsed laser deposition.

Tandem perovskite solar cells (TPSCs) have attracted considerable attention due to their potential for achieving high efficiency, low production cost, and excellent scalability. In this study, a two-terminal monolithic tandem solar cell combining a lead-free Methylammonium Bismuth Iodide ((CH₃NH₃)₃Bi₂I₉, abbreviated as MBI) perovskite top sub-cell (Eg = 1.9eV, absorber thickness 320nm) and an thin CIGS bottom sub-cell (Eg = 1.68eV, absorber thickness 500nm) was designed and comprehensively optimized using Silvaco Atlas TCAD. To eliminate the use of scarce and expensive indium, fluorine-doped tin oxide (FTO) was deliberately selected as the front transparent conductive oxide (TCO) instead of the conventionally used indium tin oxide (ITO). The superior thermal stability of FTO (stable up to 600°C versus 350°C for ITO), its higher tolerance to physical abrasion, and its direct deposition capability on glass without an intermediate passivation layer make it a more robust and cost-effective choice for large-scale manufacturing and for subsequent high-temperature processing steps required in CIGS deposition. The standalone optimized MBI-perovskite single-junction cell using FTO achieved a power conversion efficiency of 15.13%. After individual calibration and optimization of both sub-cells, the fully coupled two-terminal monolithic tandem device delivered a realistic and reproducible efficiency of 35.67% (Voc = 4.53V, Jsc = 29.23mA/cm², FF = 77.88%) under standard AM1.5G illumination. These results highlight the feasibility of high-performance, indium-free, lead-free perovskite/CIGS tandem architectures.