Tin Chalcogenides Research Articles

Dynamic Imaging of Electrochemically Induced Transformations in Layered Tin Chalcogenide Catalysts.

Understanding the dynamic transformation processes of electrocatalysts during electrochemical reactions is crucial for the development of advanced materials for energy conversion and storage, yet it remains a challenge. Herein, we report the real-time monitoring of the dynamic transformation of a series of layered Sn chalcogenides during electrochemical reduction using a plasmonic imaging method. Taking SnSe2 as an example, we observed a strong firework-like emission diffusing outward from SnSe2 to the surrounding solution under a negative potential. The diffusion coefficient of the observed species is indicative of Sn nanoclusters rather than smaller ions. This study also extends to SnSe and SnS2 nanosheets, demonstrating the general applicability of plasmonic imaging for probing the stability and transformation mechanism of heterogeneous catalysts in electrocatalytic reactions. These insights provide a foundational understanding for designing more stable and efficient electrocatalysts for industrial applications.

Wafer-scale growth of 2D SnSx hybrid films on germanium by atomic layer deposition for broadband photodetection

Two-dimensional transition metal chalcogenides (2D-TMCs) are promising materials with unique optical and electrical properties compared to bulk materials. Although the exfoliated/CVD-growth 2D-TMCs have superior properties, they have a limitation for wafer-scale processes and applications in integrated circuits (ICs). Herein, we report the fabrication of wafer-scale 2D hybridized tin chalcogenide (SnSx) on a germanium (Ge) substrate using an atomic layer deposition process, followed by a thermal annealing process to form 2D-SnSx. 2D-SnSx consists of a hybrid structure of parallel 2D-SnS2 and tilted SnS on a Ge (100) substrate, enabling bandgap lowering and intrinsically p-type doping. As a result, our broadband photodiode with a p-SnSx/n-Ge heterostructure showed a specific responsivity of 0.41 and 0.24 A/W at wavelengths 532 and 1550 nm, respectively. This work demonstrates the potential for wafer-scale 2D-TMC-based facile ICs on the Ge substrate.

En Route to a Molecular Terminal Tin Oxide.

In the pursuit of terminal tin chalcogenides, heteroleptic stannylenes bearing terphenyl- and hexamethyldisilazide ligands were reacted with carbodiimides to yield the respective guanidinato complexes. Further supported by quantum chemical calculations, this revealed that the iso-propyl-substituted derivative provides the maximum steric protection achievable. Oxidation with elemental selenium produced monomeric terminal tin selenides with four-coordinate tin centers. In reactions with N2O as oxygen transfer reagent, silyl migration toward putative terminal tin oxide intermediates gave rise to tin complexes with terminal ─OSiMe3 functionality. To prevent silyl migration, the silyl groups were substituted with cyclohexyl moieties. This analogue exhibited distinctively different reactivities toward selenium and N2O, yielding a 1,2,3,4,5-tetraselenastannolane and chalcogenide-bridged dimeric compounds, respectively.

Harnessing Wind Energy for Ultraefficient Green Hydrogen Production with Tin Selenide/Tin Telluride Heterostructures

Industrialization of green hydrogen production through electrolyzers is hindered by cost‐effective electrocatalysts and sluggish oxygen evolution reaction (OER). Herein, a facile one‐step hydrothermal technique for the in situ growth of non‐noble tin chalcogenides and their heterostructures on nickel foam (NF) as trifunctional electrocatalysts for hydrogen evolution reaction (HER), OER, and methanol oxidation reaction (MOR) is detailed. Among them, the heterostructured SnSe/SnTe/NF outperforms all others and recently reported catalysts, boasting an impressively low potential of −0.077, 1.51, and 1.33 V versus reversible hydrogen electrode to achieve 10 mA cm−2 for HER, OER, and MOR. Owing to the rod‐like morphology with hetero‐phases for enhancing the performance. Furthermore, a hybrid MOR‐mediated water electrolyzer requiring only 1.49 V to achieve 10 mA cm−2 with value‐added formate is introduced and traditional water electrolyzer is outperformed. Additionally, a zero‐gap commercial anion‐exchange membrane water electrolyzer (AEMWE) with bifunctional SnSe/SnTe/NF electrodes is tested, successfully achieving an industrially required 1 A cm−2 at a low potential of 1.93 V at 70 °C. Moreover, AEMWE using a windmill is powered and H2 and O2 production with wind speed is measured. Overall, this work paves the development of unexplored tin chalcogenide heterostructure as a potent candidate for cost‐effective, energy‐efficient, and carbon‐neutral hydrogen production.

First-principles study of structure and bonding in Ni-group transition metal carbonyls with terminal tin chalcogenides [M(CO)3SnX] (M = Ni, Pd, Pt; X = O, S, Se, and Te) complexes

This analysis employs atomistic molecular modelling based on density functional theory (DFT) approach within the B3LYP/LANL2DZ/6-31G* framework to investigate the structural and bonding analysis of nickel group transition metal Carbonyls [M(CO)4] with terminal substituted tin chalcogenides Complexes [M(CO)3SnX] (M = Ni, Pd, and Pt; X = O, S, Se, and Te). The study optimises geometries, calculates vibrational frequencies, Electron localisation parameters, inherent charges, molecular orbitals, and natural bond orders (NBO) of Ni, Pd, Pt tetra carbonyl compounds (M(CO)4) and Tin chalcogenides (M(CO3(SnX)) 1–15. While the optimised structures display tetrahedral 18-electron configurations, M(CO)3(SnX) compounds depict significant dipole moments (1.47–3.03 Debye) and varied M-Sn and C–O bond lengths. Bonding analysis through NBO, WBI, and orbital contributions elucidates polarised M-Sn bonds and distinctive sigma donor behaviour of SnX. Molecular orbital analysis uncovers trends in stability based on energy gaps. Results of the energy decomposition analysis (EDA) reveals the values of ΔEelstat are higher than that of ΔEorb, thus, indicating that the bonds under study have more ionic character. The [Ni(CO)4] shows 60.13% ionic and 39.87% covalent contribution towards Ni-C bond. The findings contribute to understanding molecular structures, reactivity, and applications in diverse chemical domains.

The quest for optimal photovoltaics: A theoretical exploration of quasi-one-dimensional tin based chalcogenides XSnS[formula omitted] (X=Ba, Sr)

Structural, mechanical, electronic, and optical properties of alkaline metals (Ba, Sr) tin chalcogenide were investigated by the first principles method based on density functional theory (DFT) implemented in the WEIN2K program. The study found that both materials exhibit a quasi-one-dimensional nature along the b-axis, and the optimized structure agrees with the available experimental data. Mechanical properties revealed that both materials are mechanically stable, exhibit ductility, and have significant anisotropy. BaSnS3 and SrSnS3 exhibit an indirect band gap with the values of 1.55 eV and 1.39 eV, respectively. Which is favorable for photovoltaic solar cell absorber materials. Like many ternary metal chalcogenides, XSnS3 compounds show significant anisotropy in the optical properties due to their quasi-one-dimensional structure. This work determined the degree of optical anisotropy of XSnS3 in terms of the dielectric function, refractive index, optical absorption, reflectivity, optical extinction, birefringence, and energy loss function. The results indicate that BaSnS3 and SrSnS3 materials possess notable optical anisotropy and a high absorption coefficient (α≈106 cm−1), low reflectivity and energy loss function within the visible and ultraviolet energy range. It indicates their potential for use in a range of applications, such as sensors, optoelectronics, and photovoltaic solar cell absorber materials.

Enhanced Opto‐Electrical Properties of Chalcogenide‐Rich Tin Selenide Thin Film after Incorporating Sulfur Yielding Tin Sulfoselenide

AbstractAlloy engineering are efficient methods to improve the physical properties of two‐dimensional (2D) material‐based photovoltaic application. Tin chalcogenide belonging to layered structured semiconducting family has been a significant compound due to its outstanding characteristics. Tin selenide (SnSe) is known as promising layered compound to develop 2D materials for optoelectronic devices. The current study focused onto the effect of tin sulfoselenide (SnSSe) alloy engineering on the structural, morphological, optical, and electrical characteristics. X‐ray Diffraction (XRD) confirmed that SnSSe and SnSe are exist in the orthorhombic crystal structure phase without other secondary phases, with the preferred high‐intensity peak along (111) oriented plane. Raman spectra was reported to give information about the vibrational characteristics of the compounds. The presence of Sulfur ion in SnSSe was further confirmed by Energy Dispersive X‐ray Spectroscopy (EDAX) and X‐ray Photoelectron Spectroscopy (XPS) analysis. Bandgap energy (Eg) has been analysed by Tauc's plot and the derivative of transmittance spectra. According to both sets of analyses, the bandgap of the SnSSe thin film is considerably smaller than that of the SnSe thin film. Hall measurements indicated that SnSSe exhibits the higher hole mobility. The present work‘s results offer useful insight into the prospective device applications of two‐dimensional alloy materials.

Interlayer expanded SnS/N-doped carbon/SnS ultra-thin composite driven from layered tin chalcogenides as advanced anode for lithium and sodium ion battery

The unique 2D-layered structure of tin (II) sulfide (SnS) compounds has led to the emergence of strong intensities, showcasing their significant potential in lithium (LIBs) and sodium (SIBs) ion batteries. However, the commercialization process of SnS compounds remain hindered due to the poor cycle stability caused by its substantial volume expansion during cycling in battery applications. In this study, a simple and scalable synthesis of ultra-thin composite with a well-connected structure SnS/N-doped carbon/SnS (SnS/NC/SnS) is reported. The structure is directly derived from layered tin chalcogenides (A2Sn3S7·xH2O, where A represents an organic cation). Within this configuration, SnS nanosheets are decorated on the N-doped carbon material. The composite exhibits an expanded layer of 9.7 Å, enabling rapid movement of Na+ ions (approximately 7 times the diffusion coefficient of bulk SnS). This expansion also aids in accommodating volume changes during the discharging and charging processes. Concurrently, theoretical calculations demonstrate that the structure maintains a relatively stable state at the interlayer spacing mentioned. The SnS/NC/SnS composite material exhibited significant potential for application in both SIBs and LIBs. In SIBs, it demonstrated excellent long-term cyclic stability, maintaining a capacity of 190 mA h g−1 even under high current density conditions of 2.5 A g−1 after 300 cycles. In LIBs, it exhibit a superior discharge capacity of 990 mA h g−1 and retains 94.1 % of its capacity after 150 cycles at 0.2 A g−1. Notably, this synthesis method is versatile, as the interlayer spacing can be adjusted by varying the type of organic cations used in the process.

Quantum control of substitutional effects on the S-involved optoelectronic properties of BeSxSe1-X ternary alloys

The research on the quantum control of substitutional effects in BeSxSe1-x ternary alloys opens up exciting opportunities in semiconductor device engineering, photovoltaic, optoelectronic integration, and quantum information processing. By understanding and manipulating the optoelectronic properties of these alloys, researchers can pave the way for advanced technologies with enhanced performance, efficiency, and functionality in various fields. We are investigating how S alloying affects the structural, electronic and optical properties of tin chalcogenide materials. We are assessing the energy band structure and optical properties of BeSxSe1-x (x = 0%, 25%, and 50%) materials using density functional theory (DFT) within a full potential linearized augmented plane wave method (FP-LAPW) framework. The theoretically expected band energy gaps of BeSxSe1-x compounds indicate that S alloying improves their electrical and optical performances, based on the assumptions used in our calculations. The majority of the bonds in the BeSxSe1-x materials (x = 0%, 25%, and 50%) are covalent. All ternary alloys and binary compounds with (x = 0%, 25%, and 50%) exhibit direct (R-Γ) band gap semiconductor behavior, with a band gap energy (Eg). Each alloy system shows a nonlinear increase in the band gap (Eg) with increasing x. As BeSxSe1-x compound belongs to strongly correlated systems, therefore modified Becke–Johnson potential is used to calculate formation enthalpy (ΔHf), and optical properties of the compounds. The intense peaks in the imaginary part of the dielectric function εi(ω) in each spectrum are contributed by chalcogen Se, Be, and S optical excitations. Similar to the trend of band gap variation (Eg) with x, the zero-frequency limit of each imaginary dielectric function as well as the extinction coefficient, refractive index, and real dielectric function, exhibit a corresponding trend of change.

Firmly interlocked Janus-type metallic Ni3Sn2S2-carbon nanotube heterostructure suppresses polysulfide dissolution and Sn aggregation

Ternary transition-metal tin chalcogenides, with their diverse compositions, abundant constituents, high theoretical capacities, acceptable working potentials, excellent conductivities, and synergistic active/inactive multi-components, hold promise as anode materials for metal-ion batteries. However, abnormal aggregation of Sn nanocrystals and the shuttling of intermediate polysulfides during electrochemical tests detrimentally affect the reversibility of redox reactions and lead to rapid capacity fading within a limited number of cycles. In this study, we present the development of a robust Janus-type metallic Ni3Sn2S2-carbon nanotube (NSSC) heterostructured anode for Li-ion batteries (LIBs). The synergistic effects of Ni3Sn2S2 nanoparticles and a carbon network successfully generate abundant heterointerfaces with steady chemical bridges, thereby enhancing ion and electron transport, preventing the aggregation of Ni and Sn nanoparticles, mitigating the oxidation and shuttling of polysulfides, facilitating the reforming of Ni3Sn2S2 nanocrystals during delithiation, creating a uniform solid-electrolyte interphase (SEI) layer, protecting the mechanical integrity of electrode materials, and ultimately enabling highly reversible lithium storage. Consequently, the NSSC hybrid exhibits an excellent initial Coulombic efficiency (ICE > 83 %) and superb cyclic performance (1218 mAh/g after 500 cycles at 0.2 A/g and 752 mAh/g after 1050 cycles at 1 A/g). This research provides practical solutions for the intrinsic challenges associated with multi-component alloying and conversion-type electrode materials in next-generation metal-ion batteries.

Direct Synthesis of Two-Dimensional SnSe and SnSe2 through Molecular Scale Preorganization.

Two-dimensional tin monoselenide (SnSe) and tin diselenide (SnSe2) materials were efficiently produced by the thermolysis of molecular compounds based on a new class of seleno-ligands. Main group metal chalcogenides are of fundamental interest due to their layered structures, thickness-dependent modulation in electronic structure, and small effective mass, which make them attractive candidates for optoelectronic applications. We demonstrate here the synthesis of stable tin selenide precursors by in situ reductive bond cleavage in the dimeric diselenide ligand (SeC2H4N(Me)C2H4Se)2 in the presence of SnCl4. New molecular precursors [SnIV(SeC2H4N(Me)C2H4Se)2], [SnIVCl2(SeC2H4N(Me)C2H4Se)], and [SnIV(SC2H4N(Me)C2H4S)(SeC2H4N(Me)C2H4Se)] were thoroughly characterized by multinuclear magnetic resonance studies and single-crystal X-ray diffraction analysis that revealed the Sn(IV) center to be octahedrally coordinated by two tridentate dianionic chelating ligands or trigonally pyramidally coordinated by one chelating ligand and two chlorido ligands. Preorganization of metal-selenium bonds in both compounds offered direct and reproducible synthetic access to two-dimensional tin chalcogenides (SnSe and SnSe2) via simple adjustment of the pyrolysis temperature. Additionally, SnSe2 and SnSxSe2-x particles could be successfully synthesized by microwave-assisted decomposition of the molecular precursors, which was unambiguously corroborated by both experimental and computational analyses that explained the formation of a selenium rich SnSxSe2-x phase from a single molecular precursor containing both Sn-Se and Sn-S bonds.

Phase-Controllable Growth of Air-Stable SnS Nanostructures for High-Performance Photodetectors with Ultralow Dark Current.

The epitaxial growth of low-dimensional tin chalcogenides SnX (X = S, Se) with a controlled crystal phase is of particular interest since it can be utilized to tune optoelectronic properties and exploit potential applications. However, it still remains a great challenge to synthesize SnX nanostructures with the same composition but different crystal phases and morphologies. Herein, we report a phase-controlled growth of SnS nanostructures via physical vapor deposition on mica substrates. The phase transition from α-SnS (Pbnm) nanosheets to β-SnS (Cmcm) nanowires can be tailored by the reduction of growth temperature and precursor concentration, which originates from a delicate competition between SnS-mica interfacial coupling and phase cohesive energy. The phase transition from the α to β phase not only greatly improves the ambient stability of SnS nanostructures but also leads to the band gap reduction from 1.03 to 0.93 eV, which is responsible for fabricated β-SnS devices with an ultralow dark current of 21 pA at 1 V, an ultrafast response speed of ≤14 μs, and broadband spectra response from the visible to near-infrared range under ambient condition. A maximum detectivity of the β-SnS photodetector arrives at 2.01 × 108 Jones, which is about 1 or 2 orders of magnitude larger than that of α-SnS devices. This work provides a new strategy for the phase-controlled growth of SnX nanomaterials for the development of highly stable and high-performance optoelectronic devices.

Subtly regulating layered tin chalcogenide frameworks for optimized photo-induced carrier separation

Elongated distance between adjacent clusters could decrease the photoinduced carrier recombination due to the prolonged intercluster charge transfer process.

Spin-polarization of topological crystalline and normal insulator Pb[formula omitted]Sn[formula omitted]Se (111) epilayers probed by photoelectron spectroscopy

The helical spin texture on the surface of topological crystalline insulators (TCI) makes these materials attractive for application in spintronics. In this work, spin-polarization and electronic structure of surface states of (111)-oriented Pb1−xSnxSe TCI epitaxial films are examined by angle- as well as spin-resolved photoemission spectroscopy (SR-ARPES). High-quality epilayers with various Sn content are grown by the molecular beam epitaxy (MBE) method. Topological-normal insulator transition manifesting itself as band gap opening is observed. It is shown that the gap opening can be induced not only by changing the Sn content of the epilayer but also depositing a transition metal (TM) on its surface. In the latter case, the observed gaping of the surface states is caused by change in surface composition and not by magnetism. We also show that helical spin polarization is present not only for samples of topological composition but also for trivial ones (with an open band gap). The observed spin polarization reaches a value of 30% for the in-plane spin component and is almost absent for the out-of-plane one. We believe that our work will pave the way for the application of surface states not only of topological but also normal insulators based on lead–tin chalcogenides in spin-charge conversion devices.

Novel insights into the unique intrinsic sensing essences of 2D tin chalcogenides for ethanol: From hexagonal SnS2 to orthorhombic SnS

Introducing orthorhombic SnS phase into two-dimensional (2D) hexagonal SnS2 crystal to form in-plane heterojunctions has become a promising approach to facilitate the sensitivity of SnS2 towards trace gases. However, its surface sensitization mechanism remains to be exploited in addition to the heterointerface effect. Hence, to dig into it, we explored the surface adsorption of SnS and SnS2 from unique surface electron configurations by combing experimental, computational and bionic approaches. Taking ethanol vapor as the target gas, orthorhombic SnS shows rapid detection of trace ethanol with a sub-ppm level at room temperature (RT). In contrast, hexagonal SnS2 is more suitable for detecting ethanol vapor with much higher concentrations (above 50 ppm). First-principles calculations and porcupine quill models further reveal that unlike the inactive symmetry of electrons on SnS2 surface, the rotational symmetry breaking of the stereochemically-active SnS surface leads to the oriented rearrangement of its surface electrons, which greatly facilitates the adsorption of trace ethanol molecules on SnS. On these basis, we renew the design concept of SnS–SnS2 in-plane heterostructures. This work reveals the structure-property relationship between the crystalline structures and gas-sensitive characteristics of 2D tin chalcogenides from a brand-new perspective, and helps the design and research of novel lateral heterostructures.

Insights into the Potassium Ion Storage Behavior and Phase Evolution of a Tailored Yolk-Shell SnSe@C Anode.

Tin chalcogenides are regarded as promising anode materials for potassium ion batteries (PIBs) due to their considerable specific capacity. However, the severe volume effect, limited electronic conductivity, and the shuttle effect of the potassiation product restrict the application prospect. Herein, based on the metal evaporation reaction, a facile structural engineering strategy for yolk-shell SnSe encapsulated in carbon shell (SnSe@C) is proposed. The internal void can accommodate the volume change of the SnSe core and the carbon shell can enhance the electronic conductivity. Combining qualitative and quantitative electrochemical analyses, the distinguished electrochemical performance of SnSe@C anode is attributed to the contribution of enhanced capacitive behavior. Additionally, first-principles calculations elucidate that the heteroatomic doped carbon exhibits a preferable affinity toward potassium ions and the potassiation product K2 Se, boosting the rate performance and capacity retention consequently. Furthermore, the phase evolution of SnSe@C electrode during the potassiation/depotassiation process is clarified by in situ X-ray diffraction characterization, and the crystal transition from the SnSe Pnma(62) to Cmcm(63) point group is discovered unpredictably. This work demonstrates a pragmatic avenue to tailor the SnSe@C anode via a facile structural engineering strategy and chemical regulation, providing substantial clarification for the phase evolution mechanism of SnSe-based anode for PIBs.

Highly selective and easily regenerated porous fibrous composite of PSF-Na2.1Ni0.05Sn2.95S7 for the sustainable removal of cesium from wastewater

The removal of 137Cs from radioactive wastewater remains a huge challenge due to the interference of many coexisting ions. Several tin chalcogenides (X2Sn3Y7, XNa, K; YTe, Se, S) were synthesized and screened for highly selective cesium removal from radioactive wastewater. It was found that Na2Sn3S7 showed the best adsorption performance for low cesium concentrations. Especially after nickel doping, the adsorption capacity and thermal stability of the adsorbent were significantly enhanced. Its maximum adsorption capacity reached 436.72 mg·g−1 within only 5 min and adsorption performance kept active in the pH range of 2–12. After being coated with a porous polysulfone (PSF) fiber, the developed PSF-Na2.1Ni0.05Sn2.95S7 was applied to natural complex water with cesium concentration of 17.58 mg·L−1. The separation factors between Cs+ and competitive ions ranged from 625.21 to 13123.21. It is noteworthy that NaNO3 was an efficient regenerating agent and can be easily separated from the CsNO3 mixture for cyclic utilization. Remarkably, only 45 min in each cycle of adsorption and desorption toward cesium was realized, and the adsorption properties hardly decreased even after 50 consecutive cycles. The above advantages make the proposed material an excellent candidate for efficient Cs+ removal and enrichment from wastewater.

Synthesis, Crystal Structures and NMR Characterization of Molecular Silver Tin Chalcogenide Complexes

AbstractA series of heteronuclear silver tin chalcogenide complexes has been synthesized by reaction of phosphine coordinated silver acetate and diorganotin acetate with bis(trimethylsilyl)chalcogenide. In addition to the silver complexes with the general formula [(iPr3PAg)2(SnR2)E2]2 (1–6, R=Me, Ph, tBu and E=S, Se), [(iPr3PAg)3(SnPh2)(SnPh)S4] (7) and [(iPr3PAg)(SnPh2)(SnPh)Se2]2 (8) were obtained by exchange of phenyl groups in solution and redox processes, respectively. In addition to single crystal X‐ray structure analyses, NMR spectra involving the nuclei 1H, 31P, 77Se, 117/119Sn and 107/109Ag allowed a structural analysis of these complexes in solution. Each element present in complexes 5–8 consists of at least one isotope with nuclear spin I=1/2. In co‐thermolysis experiments of these complexes together with Zn(SC2H4S) or Zn(SeC2H4Se) as zinc sources binary and ternary chalcogenides as well as elemental silver are found.

Intensifying bismuth concentration in tin chalcogenide for solar cell applications

Solar cells convert electricity from the solar spectrum to more than 60%. Researchers focused on this promising field because of the most demanding renewable source of electrical energy. Based on the demand, we focused our study on bismuth-doped tin chalcogenide materials for the optoelectronic and solar cell applications. The effect of bismuth concentration on structural, electronic, thermodynamic and optical properties of Sn[Formula: see text]Bi[Formula: see text]Te and Sn[Formula: see text]Bi[Formula: see text]Te materials is studied based on density functional theory (DFT). Generalized gradient approximation (GGA) was proposed to calculate structural parameters, density of states and band structure. Here the lattice parameter increases when increasing bismuth concentration. The parent binary SnTe is in semiconducting behavior with a narrow direct bandgap of 0.234 eV (L-L). From the calculated thermal and optical results, the Gruneisen parameter is maximum for Sn[Formula: see text]Bi[Formula: see text]Te and Debye temperature is maximum for Sn[Formula: see text]Bi[Formula: see text]Te. The studied materials are consistent in IR, visible and UV regions and they are adorable for IR optical detectors and solar cell applications.

Study on the properties of solid solution of screen-printed SnTe0.5Se0.5 composite film

Tin Chalcogenide alloys and their solid solutions have been investigated largely in last few years because by changing the composition the band gap can be tailored and then their physical properties as well. In present study SnTe0.5Se0.5 alloy were prepared by direct reaction of tin, tellurium, and selenium in elemental form. SnTe0.5Se0.5 composite thick films were obtained on glass substrate by employing cost efficient screen-printing technique. Structural, morphological / compositional, optical and photoconductive properties of thick film of the solid solution of SnTe0.5Se0.5 alloy were investigated. Structure and lattice constants of film were studied from x-ray diffraction. Surface morphology and composition of the film was studied through SEM/EDAX. Energy band gap of the film were investigated by diffuse reflectance spectra. Photoconductive and photo-sensing properties of the film were studied as a function of wavelength and intensity respectively.