Thick Quantum Wells Research Articles

Reducing charge noise in quantum dots by using thin silicon quantum wells

Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. Here, we address the semiconductor-dielectric interface and the buried quantum well of a 28Si/SiGe heterostructure and show the connection between charge noise, measured locally in quantum dots, and global disorder in the host semiconductor, measured with macroscopic Hall bars. In 5 nm thick 28Si quantum wells, we find that improvements in the scattering properties and uniformity of the two-dimensional electron gas over a 100 mm wafer correspond to a significant reduction in charge noise, with a minimum value of 0.29 ± 0.02 μeV/Hz½ at 1 Hz averaged over several quantum dots. We extrapolate the measured charge noise to simulated dephasing times to CZ-gate fidelities that improve nearly one order of magnitude. These results point to a clean and quiet crystalline environment for integrating long-lived and high-fidelity spin qubits into a larger system.

Double-Barrier Quantum-Well Structure: An Innovative Universal Approach for Passivation Contact for Heterojunction Solar Cells

The main drawbacks of modern solar-cell technologies are low-quality surface passivation, recombination losses, and carrier selectivity, which limit their efficiency. Therefore, this study proposes an innovative universal approach for a double-barrier two-dimensional (2D) quantum well (QW) passivation structure for solar cells. To this end, c-Si solar cells were examined as model cells. Preliminary investigations (e.g., contact resistance, passivation, and recombination current density) were conducted with a stack of SiOx/nc-Si/SiOx QW on n-type surfaces, and excellent results were obtained with a 30 nm-thick nc-SiOx(n) carrier-selective layer. Furthermore, the effects of different QW thicknesses and doping doses on the surface passivation of such contacts were studied, and the best results were achieved for a 5 nm QW. These QWs also exhibited a low degree of dopant diffusion, which was suppressed by the double SiOx layer. Furthermore, the 2D QW passivation structure with carrier-selective layers, which was denoted as a heterojunction with quantum well (HQW) solar cell, exhibited an excellent passivation improvement and had a lifetime (τeff) of 2746 μs and an implied open-circuit voltage (iVoc) of 736 mV for a 5 nm 2D QW structure. Moreover, a fabricated 5 nm 2D QW-based silicon heterojunction (SHJ) solar cell exhibited an open-circuit voltage (Voc) of 732.5 mV, a short-circuit current density (Jsc) of 39.5 mA/cm2, a fill factor (FF) of 77.95%, and an efficiency (Eff) of 22.55%. To validate these findings, theoretical calculations were performed using the experimental results, which confirmed the resonance tunneling of charge carriers across the 5 nm HWQ structure.

3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells.

InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared emitters for direct integration onto Si complementary metal oxide semiconductor technology. While the core-shell geometry in principle allows for a greater tuning of composition and emission, especially farther into the infrared, the practical limits of elastic strain accommodation in quantum wells on multifaceted nanowires have not been established. One barrier to progress is the difficulty of directly comparing the emission characteristics and the precise microstructure of a single nanowire. Here we report an approach to correlating quantum well morphology, strain, defects, and emission to understand the limits of elastic strain accommodation in nanowire quantum wells specific to their geometry. We realize full 3D Bragg coherent diffraction imaging (BCDI) of intact quantum wells on vertically oriented epitaxial nanowires, which enables direct correlation with single-nanowire photoluminescence. By growing In0.2Ga0.8As quantum wells of distinct thicknesses on different facets of the same nanowire, we identified the critical thickness at which defects are nucleated. A correlation with a traditional transmission electron microscopy analysis confirms that BCDI can image the extended structure of defects. Finite element simulations of electron and hole states explain the emission characteristics arising from strained and partially relaxed regions. This approach, imaging the 3D strain and microstructure of intact nanowire core-shell structures with application-relevant dimensions, can aid the development of predictive models that enable the design of new compact infrared emitters.

Terahertz Ratchet Effect in Interdigitated HgTe Structures

The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for studying this phenomenon. Here, we report on the observation of ratchet effects in $\mathrm{Hg}\mathrm{Te}$-based dual-grating-gate structures hosting different band-structure properties. Applying polarized terahertz laser radiation we detect linear and polarization-independent ratchets, as well as a radiation-helicity-driven circular ratchet effect. Studying the ratchet effect in devices made of quantum wells (QWs) of different thickness, we observe that the magnitude of the signal substantially increases with decreasing QW width with a maximum value for devices made of QWs of critical thickness hosting Dirac fermions. Furthermore, sweeping the gate voltage amplitude we observe sign-alternating oscillations for gate voltages corresponding to $p$-type conductivity. The amplitude of the oscillations is more than two orders of magnitude larger than the signal for $n$-type conducting QWs. The oscillations and the signal enhancement is shown to be caused by the complex valence band structure of $\mathrm{Hg}\mathrm{Te}$-based QWs. These peculiar features of the ratchet currents make these materials an ideal platform for the development of terahertz applications.

Realizing high injection current density up to 200 kA-cm−2 in electrically pumped AlGaN ultraviolet laser diodes on c-Sapphire substrate

Previously, we attempted to the optically-pumped AlGaN ultraviolet (UV) laser diodes (LDs) on AlN template on c-Sapphire substrate, using low-cost epitaxial growth technique in low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE). As a result, stimulated lasing spectra at 274 nm were observed for the first time at room temperature (RT) in the optically pumped LD. However, the electrically-pumped AlGaN-based (270–298 nm)-band UV LD was quite challenging due to both the issue of low injection current density and light confinement factor (Г). In this paper, the injection current density in the electrically pumped AlGaN UV LD at 283 nm emission was remarkably improved up to 200 kA-cm−2 by using undoped Al-graded cladding and Al-graded Mg-doped p-AlGaN hole source layer (HSL). Also, some weak oscillation at 296 nm near to the main spontaneous emission peak of 298 nm-band LD under the 600 mA (24 V) current using pulse width of 50 ns at RT was observed. To further improve the lasing phenomenon, some theoretical studies was conducted, by making the p-side waveguide (p-WG) layer non-doped (Mg = 0) and also increasing the quantum-well (QW) thickness from 2 nm to 4 nm in the multiquantum-wells (MQWs). Consequently, the optical-loss was significantly reduced from 22.7 to 8.7 cm−1 and the Г was enhanced from 1.77% (Experimental LD) to 4.65% (simulated LD).

Lower threshold current density of GaN-based blue laser diodes by suppressing the nonradiative recombination in a multiple quantum well.

The influence of the nonradiative recombination in a multiple quantum well of GaN-based blue laser diodes (LDs) has been are studied experimentally and theoretically by analyzing the optical and electrical properties of LDs with various thickness and indium content of quantum wells (QWs). It is found that when keeping the LD emission wavelength nearly unchanged, the LD device performance with thinner QW and higher indium content of InGaN QWs is much better than the LD with thicker QW and lower indium content, having smaller threshold current density, higher output optical power and larger slope efficiency. Typically, the threshold current density is as low as 0.69 kA/cm2, and the corresponding threshold current is only 250 mA. The lifetime is more than 10,000 hours at a fixed injection current of 1.2 A under a room-temperature continuous-wave operation. Characteristics of photoluminescence (PL) microscopy images, temperature dependent PL spectra, time-resolved PL and electroluminescence spectra demonstrate that a reduction of the nonradiative recombination centers and an improvement of homogeneity in QWs are the main reason for the performance improvement of GaN-based LD using thinner QW layers with a higher indium content in a certain range. Moreover, theoretical calculation results demonstrate that using a thinner quantum well is also helpful for improving the device performance if the change of alloy material quality is considered during the calculation.

Bandgap engineering, monolithic growth, and operation parameters of GaSb-based SESAMs in the 2–2.4 µm range

We present the detailed growth and characterization of novel GaSb-based semiconductor saturable absorber mirrors (SESAMs) operating in the 2–2.4 µm spectral range. These SESAMs at different wavelengths are bandgap engineered using ternary material compositions and without strain compensation. We observe that even when the thickness of quantum wells (QWs) exceeds the critical thickness we obtain strain relaxed SESAMs that do not substantially increase nonsaturable losses. SESAMs have been fabricated using molecular beam epitaxy with a AlAs0.08Sb0.92/GaSb distributed Bragg reflector (DBR) and strained type-I InxGa1-xSb or type-II W-like AlSb/InAs/GaSb QWs in the absorber region. All the type-I SESAMs show excellent performance, which is suitable for modelocking of diode-pumped semiconductor, ion-doped solid-state, and thin-disk lasers. The recovery time of the type-II SESAM is too long which can be interesting for laser applications. The dependence of the SESAM design, based on its QW number, barrier material, and operation wavelength are investigated. A detailed characterization is conducted to draw conclusions from macroscopic nonlinear and transient absorption properties at different wavelengths in the 2–2.4 µm range for the corresponding devices.

Multicolor Biexciton Lasers Based on 2D Perovskite Single Crystalline Flakes

AbstractThe biexciton is a quasi‐particle created from two free excitons and can be applied for basic quantum operations, entangled light sources, and lasers. 2D lead‐halide layered perovskites (LPs) naturally form organic–inorganic quantum wells (QWs), leading to high exciton binding energy and tunable band‐gaps dependent on the QW thickness of <n>. Although excitonic lasing has been reported for thicker LP‐QWs, biexciton emissions and lasers from phase‐pure LP‐QWs as a function of <n> remain largely unexplored. Here, a facile solution growth method for fabricating single‐crystalline flakes (SCFs) of LP‐QWs of (PEA)2(MA)n−1PbnI3n+1 (PEA = phenylethylammonium, <n> = 1, 2, and 3) is reported. Further, multicolor amplified spontaneous emissions from biexciton states of (PEA)2(MA)n−1PbnI3n+1 (<n> = 1, 2, and 3) SCFs are demonstrated at 541 (green), 588 (yellow), 627 nm (red) with thresholds of 35.4, 15.1, and 5.8 µJ cm−2 at 20 K, respectively. In order to offer cavities for these single‐crystalline flakes, they are exfoliated into smaller flakes. Multimode lasing is shown at 586 and 627 nm for <n> = 2 and 3 with threshold of 10.5 and 4.8 µJ cm−2, respectively. The results of this study not only enrich the basic understanding of many‐body excitonic interactions in 2D LPs but also provide insights for developing solution‐processed multicolor lasers.

Small signal analysis of the modulation bandwidth of light-emitting diodes for visible light communication

We perform a theoretical investigation of the small-signal modulation characteristics of light-emitting diodes (LEDs) for visible light communication (VLC) applications. A comprehensive model for the small-signal frequency bandwidth is developed using a carrier rate equation with the ABC recombination model. Using the obtained general form of the 3-dB bandwidth (f3dB), we analyze the dependence of the bandwidth on various parameters of the LEDs. The internal quantum efficiency (IQE) is found to significantly influence the modulation bandwidth of LEDs. At a high current density, f3dB is approximately inversely proportional to IQE, suggesting the importance of a trade-off between high IQE and fast modulation speed. In addition, we analyze and discuss the effects of the radiative recombination coefficient, current density, and quantum-well thickness on f3dB, comparing the modeling results with previous experimental data. The presented model of the modulation bandwidth can be advantageous in understanding the modulation characteristics of LEDs for high-speed VLC.

Dual-peak electroluminescence spectra generated from Al n /12Ga1-n/12N (n = 2, 3, 4) for AlGaN-based LEDs with nonflat quantum wells

The metastability of Al n /12Ga1-n/12N (n = 2, 3, and 4) was investigated by the statistical analysis of electroluminescence (EL) spectra having dual peaks with a peak-to-peak distance (pp) of >10 nm generated from nonflat Al x Ga1- x N (x ∼ 0.2) quantum wells (QWs) fabricated on c(0001) sapphire substrates with a miscut of 1.0° towards the m[100] axis. To explain the origins of the dual-peak EL (DPEL) spectra, which are often observed for AlGaN-QWs with Ga content of greater than 0.7, a nonflat QW model incorporating two metastable compositions, Al(n-1)/12Ga1-(n-1)/12N and Al n /12Ga1-n/12N (n: integer), is proposed. By the statistical analysis of peak wavelengths in DPEL spectra and the verification of EL spectral shapes, two series of featured EL peak wavelengths with intervals of 2–3 nm were obtained from five out of six LED wafers. The two series of featured EL peak wavelengths were assigned by comparison with the calculated EL wavelengths. Then, Al2/12Ga10/12N and Al3/12Ga9/12N were determined to be the origins of peaks with the longer and shorter wavelengths in the DPEL, respectively, in addition to the metastable Al n /12Ga1-n/12N (n= 4–9) compositions observed in our previous studies. When DPEL (pp> 10 nm) appeared, the difference in QW thickness between Al2/12Ga10/12N and Al3/12Ga9/12N tended to be larger than one monolayer (ML), indicating a significant amount of Ga or GaN mass transport. Furthermore, the Al2/12Ga10/12N and Al3/12Ga9/12N QWs are considered to have thicknesses of m ML (m: consecutive integers), suggesting the 1 ML configuration of Al and Ga atoms on the c(0001) plane. In addition, the DPEL obtained from nonflat Al x Ga1- x N (x ∼ 0.25) QWs by another research group was shown to be related to two metastable Al n /12Ga1-n/12N (n = 3, 4), similarly to our one exceptional LED wafer, which also agreed with the model proposed in this work.

Optical Properties of Gaas/Alxga1-xas Superlattice Under E-Field for Quantum Cascade Laser Application

Optical properties of GaAs/AlxGa1-xAs superlattice are studied dependent on quantum well thickness of gain region and doping density of injector layers underperformed electric field. Conduction band alignment of the superlattice is obtained by using effective mass approximation. 1d-Schrodinger formula is solved by using FDM. Intersubband transition energies, linear (nonlinear and total) absorption coefficients and linear (nonlinear and total) refractive index changes are plotted under applied electric field intensity. Intersubband transition energy of electron from second excited state to first excited state shows 147 meV. It is found that -45 kV/cm electric field intensity and 5 nm layer thickness of last quantum well of the gain region are the best values for studied structure. After that, linear absorption coefficient is investigated dependent on carrier number in the injector region under electric field. It is found that carrier number over 5 𝑥 1016 𝑐𝑚−2 can causes huge internal absorption of the radiative emission obtained in gain region due to increase in linear absorption coefficient by factor 10. As a conclusion, total absorption coefficient and total refractive index change are calculated for optimized parameters.

Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers

We report on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different well widths (3 or 9 nm) with and without doped barriers. QW barriers were doped with the aim of reducing the internal electric field (FQW) in the QW to increase the electron-hole overlap, therefore increasing the recombination rates and resulting in the reduction of the efficiency droop. We, indeed, observed, through biased photocurrent spectroscopy, a reduction in FQW with doped barriers, with FQW being in the same direction of the p-n junction field at zero bias as opposed to the junction field for LEDs without doped barriers. Even with the improvement in the ground state wavefunction overlap, the ground state transition rate remains low for thick QWs. Transitions through excited states were observed for both thick QW LEDs with and without doped barriers. The thick QW LED without doped barriers displayed low external quantum efficiency (EQE), likely as a result of the carrier overflow due to the poor confinement of carriers in the excited states. On the other hand, for LEDs with doped barriers, the flatter band in the QW resulting from the lower FQW reduces the energy separation between the eigenstates, leading to better confinement of carriers in the excited states. With doped barriers, we demonstrated a low efficiency droop 9-nm-thick single QW LED with a peak EQE of 42% at 40 A/cm2 and an EQE of 36% at 400 A/cm2.

EFFECT OF THE DENSITY OF SURFACE V-DEFECTS ON LASER PROPERTIES OF InGaN/GaN HETEROSCTRUCTURES WITH MULTIPLE QUANTUM WELLS GROWN ON SILICON SUBSTRATES

We investigated the radiative properties of InGaN/GaN heterostructures with multiple quantum wells (MQWs) grown on silicon substrates with different thicknesses of quantum wells at optical excitation. The correlation of laser and photoluminescent properties with the surface morphology of the gallium nitride
 coating layers and the density of V-defects has been established. It is shown that, with a growth in the density of V-defects, the threshold power density of the excitation of the generation of InGaN/GaN heterostructures with MQWs increases.

Distribution control enables efficient reduced-dimensional perovskite LEDs.

Light-emitting diodes (LEDs) based on perovskite quantum dots have shown external quantum efficiencies (EQEs) of over 23% and narrowband emission, but suffer from limited operating stability1. Reduced-dimensional perovskites (RDPs) consisting of quantum wells (QWs) separated by organic intercalating cations show high exciton binding energies and have the potential to increase the stability and the photoluminescence quantum yield2,3. However, until now, RDP-based LEDs have exhibited lower EQEs and inferior colour purities4-6. We posit that the presence of variably confined QWs may contribute to non-radiative recombination losses and broadened emission. Here we report bright RDPs with a more monodispersed QW thickness distribution, achieved through the use of a bifunctional molecular additive that simultaneously controls the RDP polydispersity while passivating the perovskite QW surfaces. We synthesize a fluorinated triphenylphosphine oxide additive that hydrogen bonds with the organic cations, controlling their diffusion during RDP film deposition and suppressing the formation of low-thickness QWs. The phosphine oxide moiety passivates the perovskite grain boundaries via coordination bonding with unsaturated sites, which suppresses defect formation. This results in compact, smooth and uniform RDP thin films with narrowband emission and high photoluminescence quantum yield. This enables LEDs with an EQE of 25.6% with an average of 22.1 ±1.2% over 40 devices, and an operating half-life of two hours at an initial luminance of 7,200 candela per metre squared, indicating tenfold-enhanced operating stability relative to the best-known perovskite LEDs with an EQE exceeding 20%1,4-6.

Quantum barriers with a polarization self-screening effect for GaN-based VCSELs to increase the electron-hole stimulated recombination and output performance

Hole injection is one of the fundamental limitations that affect the lasing power for GaN-based vertical-cavity surface-emitting lasers (VCSELs). In this report, a GaN-based VCSEL with a composition gradient quantum barrier (CGQB) structure is proposed and investigated. The designed InxGa1-xN quantum barrier has a linear gradient level of InN composition along the [0001] orientation, which is effective in reducing the energy band barrier height for holes. Furthermore, the polarization-induced bulk charges that are generated in the proposed quantum barriers can reduce the electric field magnitude in quantum wells, which is known as the polarization self-screening effect. Therefore, the hole injection and the electron-hole stimulated recombination rate can be both enhanced. We also find that although the hole injection can be enhanced and the polarization induced electric field in the quantum wells can be reduced, an increased gradient level of the InN composition for the polarization self-screened quantum barriers is not always favored. The reduced quantum barrier height will redistribute the energy subbands and make peak gain not coupled with the cavity resonance wavelength, which will decrease the lasing power. Hence, to avoid the substantial variation of the subbands, we suggest that the polarization self-screened active region shall possess properly thick quantum wells for maximizing the lasing power. Moreover, the optimized active region design can increase the 3dB frequency.

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content

InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as well as for exploiting topological insulator behavior in III-nitride semiconductors. However, it had been argued that the highest indium content in such ultra-thin QWs is kinetically limited to a maximum of 33%, narrowing down the potential range of applications. Here, it is demonstrated that quasi two-dimensional (quasi-2D) QWs with thickness of one atomic monolayer can be deposited with indium contents far exceeding this limit, under certain growth conditions. Multi-QW heterostructures were grown by plasma-assisted molecular beam epitaxy, and their composition and strain were determined with monolayer-scale spatial resolution using quantitative scanning transmission electron microscopy in combination with atomistic calculations. Key findings such as the self-limited QW thickness and the non-monotonic dependence of the QW composition on the growth temperature under metal-rich growth conditions suggest the existence of a substitutional synthesis mechanism, involving the exchange between indium and gallium atoms at surface sites. The highest indium content in this work approached 50%, in agreement with photoluminescence measurements, surpassing by far the previously regarded compositional limit. The proposed synthesis mechanism can guide growth efforts towards binary InN/GaN quasi-2D QWs.

Discrete wavelengths observed in electroluminescence originating from Al1/2Ga1/2N and Al1/3Ga2/3N created in nonflat AlGaN quantum wells

When nonflat Al x Ga1−x N quantum wells (QWs) for producing 285 nm light emitting diodes (LEDs) were fabricated on n-AlGaN on AlN templates with dense macrosteps on c(0001) sapphire substrates with a 1.0° miscut relative to the m[1–100] axis, composite electroluminescence (EL) spectra from both inclined and terrace zones in Al x Ga1−x N QWs (x∼ 1/3) were generated owing to compositional and thickness modulations. The shoulder or main peaks in composite EL spectra tended to locate at fixed discrete wavelengths of ∼287, ∼292, and ∼296 nm from 12 nonuniform 285 nm LED wafers that were involved in nonnegligible run-to-run drift, even though these wafers were fabricated using the same source gas flow parameters for metal-organic vapor phase epitaxy. The discrete wavelengths of ∼287, ∼292, and ∼296 nm were attributed to EL from Al1/3Ga2/3N QWs with thicknesses of 8, 9, and 10 monolayers (ML), respectively, by referring to the results of cathodoluminescence (CL) analysis. Also, when nonflat Al x Ga1−x N QWs (x∼ 1/2) for 265 nm LEDs were grown, single-peak-like EL spectra were mainly generated from the inclined zones in nonflat QWs. The EL spectra taken from four nonuniform 265 nm LED wafers tended to show weak structures or main peaks at ∼257, ∼261, ∼266, and ∼271 nm, which were also attributed to emissions from Al1/2Ga1/2N QWs with thicknesses of 5, 6, 7, and 8 ML, respectively, by referring to CL analysis results. The creation of Al1/3Ga2/3N and Al1/2Ga1/2N in nonflat QWs in this work was in agreement with the results of our previous studies that indicated the creation of metastable Al n /12Ga1−n/12N (n: consecutive natural numbers). Furthermore, QW thicknesses of consecutive n ML may imply that Al1/3Ga2/3N and Al1/2Ga1/2N have 1 ML configurations of Al and Ga atoms on a c(0001) plane.

Experiment-simulation comparison of luminescence properties of GaN/InGaN/GaN double graded structures

Graded InGaN structures have been designed by increasing the indium composition from 3% to a maximum value then back to 3%. This results in a Zig-Zag quantum well (QW) structure with a composition grading and subsequent polarization doping, which forms a p-n junction. Separate structures are designed by varying the maximum In composition but maintaining a constant QW thickness. This is both in order to test the limits of the molecular beam epitaxy growth control in terms of the deposition source ramping rates and to determine the limits of the maximum In composition within a narrow QW. The results indicate that by increasing the maximum indium composition, the overall emission, while very broad, shifts to lower energies. The broadband emission covers wavelengths between 360 and 700 nm. Simulations identify the lowest energy, band-to-band transition for fully strained structures with a noticeable shift resulting from partial relaxation in samples with higher indium content. This type of novel polarization doped structure has useful applications in optoelectronic devices; therefore the presented understanding of its optical transitions will be beneficial to their design and implementation.

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive investigation and modeling of the impact of defects on the electrical characteristics of InGaN-based LEDs, as a function of the thickness of the quantum well (QW). First, we demonstrate that the density of defects in the active region of III-N LEDs scales with increasing thickness of the InGaN QW. Since device layers with high indium content tend to incorporate more defects, we ascribed this experimental evidence to the increased volume of defects-rich InGaN associated to thicker InGaN layers. Second, we demonstrate that the current–voltage characteristics of the devices are significantly influenced by the presence of defects, especially in the sub turn-on region. Specifically, we show that the electrical characteristics can be effectively modeled in a wide current range (from pA to mA), by considering the existence of trap-assisted tunneling processes. A good correspondence is obtained between the experimental and simulated electrical characteristics (I–V), by using—in the simulation—the actual defect concentrations/activation energies extracted from steady-state photocapacitance, instead of generic fitting parameters.

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

Purpose The aims of this paper is to study the effects of the V/III ratio of indium gallium nitride (InGaN) quantum wells (QWs) on the structural, optical and electrical properties of near-ultraviolet light-emitting diode (NUV-LED). Design/methodology/approach InGaN-based NUV-LED is successfully grown on the c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition. Findings The indium composition and thickness of InGaN QWs increased as the V/III ratio increased from 20871 to 11824, according to high-resolution X-ray diffraction. The V/III ratio was also found to have an important effect on the surface morphology of the InGaN QWs and thus the surface morphology of the subsequent layers. Apart from that, the electroluminescence measurement revealed that the V/III ratio had a major impact on the light output power (LOP) and the emission peak wavelength of the NUV-LED. The LOP increased by up to 53% at 100 mA, and the emission peak wavelength of the NUV-LED changed to a longer wavelength as the V/III ratio decreased from 20871 to 11824. Originality/value This study discovered a relation between the V/III ratio and the properties of QWs, which resulted in the LOP enhancement of the NUV-LED. High TMIn flow rates, which produced a low V/III ratio, contribute to the increased LOP of NUV-LED.