Temperature Dependence Of Voltage Research Articles

Pulse measurements of transient thermal response and temperature of avalanching p – n junction

A method is presented for measuring the junction temperature and the transient thermal response of oscillator-mounted avalanche diodes; the method requires an exact knowledge of the temperature dependence of the diode breakdown voltage. The junction temperature can be measured with unchanged accuracy within the measured temperature range of the breakdown voltage. The transient response as close as a few microseconds after the initiation of the junction-temperature step can be measured.

Temperature dependence of breakdown voltage in silicon abrupt p-n junctions

Temperature dependence of breakdown voltage in silicon abrupt p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -n junctions has been calculated using a modified Baraff theory [1]-[3] and measured experimentally from 77°K to 500°K, with substrate doping from 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">15</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">18</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> . Experimental data are in good agreement with the results of theoretical calculations. These results strongly substantiate the validity of the modified Baraff theory which has been pointed out by Sze and Crowell.

Some properties of TCNQ complex salts films

Films of triethylammonium and quinolinium complex salts of TCNQ were made by two methods: cathode sputtering in an argon discharge and vacuum deposition. The films consisted of two phases. Both the electrical and the optical properties of the films changed during aging. In the present paper, the following topics are mainly dealt with: the temperature dependence of resistance and thermoelectric voltage within the temperature interval approximately from 150 °K or 200 °K, to 300 °K, and the changes in these properties during aging of the samples. Our results concerning the triethylammonium complex salt of TCNQ agree in principle with the findings of other authors on crystals (except for the changes during aging). This is not true for the quinolinium complex salt films. The results are interpreted only qualitatively in terms of LeBlanc's model.

A method for heat flow resistance measurements in avalanche diodes

Avalanche transit time oscillators are operating at power densities approaching 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> W/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , unprecedented in semiconductor device history. At such power densities, heat flow resistance problems at the interface between the flip-chip mounted silicon chips and the metal substrate, as well as between the package and the heat sink, are extremely critical. This paper describes a new, nondestructive and accurate method of measuring the heat flow resistance between junction and heat sink by utilizing the temperature dependent breakdown voltage V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</inf> (T) as a conveniently built-in temperature sensor. Variations in junction temperature ΔT with power ΔP= V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</inf> ΔI are, therefore, related to variations in breakdown voltage ΔV <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</inf> with current ΔI resulting in a contribution to the electrical small signal resistance of the diode. This thermal resistance contribution R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> can be separated readily from spreading and space charge resistance R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ap</inf> and R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</inf> because of the frequency dependence of R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> (ω). Furthermore, the frequency dependence of R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> (ω) allows the separation of heat flow resistance contributions originating in the immediate vicinity of the junction (Si-metal interface) from contributions originating at a poor thermal contact between package and heat sink. In keeping with calculations on simplified geometrical configurations, for which analytical solutions of the frequency dependent heat flow in a distributed circuit could be obtained, experimental results are presented which indicate that both heat flow resistance contributions can be extracted and separated with sufficient accuracy from as few as three electrical resistance measurements, e.g., at dc, 100 Hz, and 1 MHz. The simplicity of such measurements and their evaluation make this technique ideal for in-line testing of production devices.

On Majority Carrier Sweep‐Out by Trapped Space Charge in Gold‐Doped Silicon

AbstractAfter pulsed majority carrier injection into gold‐doped p‐type Si, a decrease in conductivity occurs, which is caused by sweep‐out of free thermal carriers in the electric field of the trapped injected space charge. The step‐like recovery of conductivity (carrier concentration) is observed after a time comparable with the thermal release time of the traps. The dependence of depletion time on injection voltage or injected space charge was determined at various temperatures. The temperature dependence of injection voltages for zero depletion time reveals two regions in which different mechanisms of recovery are dominant. The results are in good agreement with a simple theory and values for the donor level of Au in Si ED = 0.315 eV and the cross section for holes \documentclass{article}\pagestyle{empty}\begin{document}$ S_{\rm p} = \frac{1}{g}2.5 \times 10^{ - 14} \,{\rm cm}^2 $\end{document} can be derived.

On thermal and excess currents in GaSb tunnel diodes

Experimental results presented here show that excess and thermal currents coexist independent of one another. Excess current behaves according to an analytical expression based on linear temperature dependence of built-in voltage. Thermal current changes from recombination-generation at low voltage to normal injection current at higher voltages.

Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

Measurements of apparent threshold voltages for conduction of both <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">n-p-n</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p-n-p</tex> MOS-

Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures

Semilogarithmic Amplifier System

This report describes an amplifier system having the capability of compressing several decade pulse height ranges into several linear step gain ranges covering only a single decade. Rather than employing the usual frequency, voltage, and temperature dependent low voltage semiconductor switching and conduction characteristics, this amplifying system utilizes the reproducible, easily calibrated, abrupt, high level limiting characteristics of a transistor operational feedback amplifier. The several cascaded stages of this amplifier, whose individual outputs drive a pulse adder, use these abrupt, high level limiting characteristics to determine the boundries between several well defined linear step gain ranges as a function of pulse amplitude. The gain in each of these ranges is established by that gain available prior to the point where limiting occurs in the amplifier system. Such an amplifying system has great application in the measurement of wide range nuclear or other pulse height spectra, where the relatively poor resolution uniformity of multichannel analyzers either dictates an unreasonable number of available channels or the use of some sort of compression amplifier. The plot of Fig. 1 clearly displays this resolution nonuniformity.

Temperature Dependence of Surface Voltage of Silver Bromide

The temperature dependence of surface voltage of silver bromide crystals has been studied. The change in the surface voltage is due to the change in the ionic space charge voltage between silver metal and silver bromide. Near and on free surface, silver ions and electrons move, and their surface levels change under the condition that their change cancels the voltage change due to the ionic space charge of this side. The curve of surface voltage vs temperature consists of two straight lines, one of which refers to the impurity region, the other refers to the intrinsic region. The more Cd the sample contains, the higher temperature the knee point moves to. The formation energy of Frenkel defect and other quantities were obtained.