To emulate a visual perception system, a bismuth telluride (Bi2Te3)/indium-gallium-zinc oxide (IGZO) heterostructure is introduced for optoelectronic neuromorphic transistors (ONTs). Amorphous IGZO is applied as a channel layer to exhibit low off-current, high mobility, and persistent photoconductivity, enabling light-stimulated neuromorphic characteristics. The atomic ratio of In/Ga/Zn was 9.4:9.8:5.2. For a light absorption layer, Bi2Te3 is applied due to a small bandgap, high photoresponse, and carrier concentration. However, conventional optoelectronic devices using Bi2Te3 exhibit insufficient performance owing to their excessive conductivity. To resolve the constraint, the oxidation of Bi2Te3 is performed to suppress its electrical conductivity. Finally, the IGZO ONT with a Bi2Te3 layer exhibits optoelectronic characteristics under visible-light irradiation. Under red-light irradiation having a light intensity of 5 mW mm-2, it exhibits enhanced optoelectronic characteristics including photoresponsivity, photosensitivity, and detectivity from 19.6 to 3.46 × 102 A/W, 4.95 to 1.46 × 108, and 1.45 × 107 to 2.13 × 1012 Jones compared to that without a Bi2Te3 layer, respectively. To confirm reproducibility and uniformity, we fabricated and compared the optoelectronic characteristics of 5 samples from batch to batch. Regarding optoelectronic neuromorphic characteristics, the ONT exhibits short- and long-term memory and a highly linear relationship between peak synaptic current and pulse number under red-light pulses. The paired-pulse facilitation index was 208%. To confirm the applicability of artificial visual perception, a 6 × 6 ONT array demonstrates long-term memory characteristic successfully after red-light irradiation with a Y-shaped pattern. In view of stability and reliability, we conducted three potentiation processes and compared the peak synaptic currents of each potentiation process.
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