Epitaxial growth of CaF 2 on the (0 0 1) surface of LiF is studied for crystal temperatures between 573 and 773 K and for molecular beam fluxes of 1 × 10 12–1 × 10 13 CaF 2 molecules per cm 2 and s. For T = 573 K layer growth with the orientation CaF 2(0 0 1)[1 0 0]∥LiF(0 0 1)[1 1 0] is found. The layer growth mode is interpreted by a restricted mobility of CaF 2 molecules at this low temperature. LEED studies suggest a rearrangement of the (0 0 1) plane of CaF 2 leading to the formation of nm-scaled fourfold pyramids with (1 1 1) facets or, alternatively, an ab initio formation of such pyramids accompanied by a fast coalescence to a closed layer. For temperatures T ⩾ 673 K growth of islands occurs. With increasing temperature the orientation changes to CaF 2(0 0 1)[1 0 0]∥LiF(0 0 1)[1 0 0]. This latter orientation may be attributed to an increasing mixing of Li + and Ca 2+ ions, enforcing in this way a continuation of the cation arrangement of the underlying LiF crystal into the growing CaF 2 islands. As for MgF 2 LiF(0 0 1) , for the present system growth of LiF crystallites — presumably on already grown CaF 2 layers — is found. The epitaxial growth of these crystallites with the (1 1 1) surface parallel to the original (0 0 1) surface of the LiF crystal is interpreted by a space filling arrangement of F − anions above Ca 2+ ions.
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