Superior Linearity Research Articles

Flexible and Stable Carbon Nanotube Film Strain Sensors with Self-Derived Integrated Electrodes.

The development of flexible and wearable electronic devices has put an increasing demand on electrode systems with seamless connection and high compatibility with the main device, in order to accommodate complex deformation conditions and maintain stable performance. Here, we present a carbon nanotube-integrated electrode (CNTIE) by wet-pulling the ends of a carbon nanotube (CNT) film to form condensed thin fibers that resemble conventional conducting wire electrodes. A flexible strain sensor was constructed consisting of the middle CNT film as the main functional part and the CNTIE as self-derived electrodes, with inherent CNT connection between the two parts. The sensor can be transferred to versatile substrates (e.g., balloon surface) or encapsulated in thermoplastic polymers, exhibiting a large linear response range (up to 1000% in tensile strain), excellent durability and repeatability over 5000 cycles, and the ability to detect small- to large-degree human body motions. In addition, the strain sensor based on the CNTIE hybrid film (MXene/CNT and graphene/CNT) also shows superior linearity and stability at a strain range of 0-800%. Compared with the sensors using traditional silver wire electrodes and separately fabricated CNT fiber electrodes, our CNTIE plays an important role in achieving highly stable performance in the strain cycles. Our self-derived integrated electrodes provide a potential route to solve the incompatibility issues of conventional electrodes and to develop high-performance flexible and wearable systems based on CNTs and other nanomaterials.

A Wide‐Range Linear and Stable Piezoresistive Sensor Based on Methylcellulose‐Reinforced, Lamellar, and Wrinkled Graphene Aerogels

AbstractGraphene‐based aerogels (GAs) have been extensively studied for pressure sensing applications due to their high compressibility and conductivity. But the usually‐adopted high‐temperature treatment generally damages the flexibility and stability. It is still challenging to prepare piezoresistive sensors with a wide linear range, and reliable cyclic performance. Herein, we demonstrate an excellent wide‐range piezoresistive sensor based on an aerogel of methylcellulose reinforced reduced graphene oxide (MC/GA). A steaming reduction at 120 °C is proposed to properly control the intermolecular forces and the chemical bonding between MC and GA. The finite element analysis indicates that wrinkled lamellae with hierarchical pores are beneficial to minimize the stress concentrations. As a result of the combined architecture of reinforced, oriented, and wrinkled lamellae with hierarchical pores, the MC/GA has a superior linearity in a much wide range (0–17 kPa, R2 > 0.997), a high sensitivity (9.38 kPa−1), a short response time (<40 ms) and a reliable cyclic performance (>99% retention). As demonstrations, the MC/GA sensor can monitor vital signs of the upper lip, throat or wrist, and can sense the large motion of the fingers, elbows, and feet. These advantages make the MC/GA sensor have a great potential in various health monitoring and motion‐detecting fields.

Environmentally stable one-dimensional copper halide based ultra-flexible composite film for low-cost X-ray imaging screens

Environmentally stable, low cost, large stokes shift, adjustable area and flexibility are basic factors to prepare scintillator films for their commercial application. Here, a low cost (∼3 $/g) room-temperature ligand-assisted reprecipitation method is used to synthesize one-dimensional crystal structure based on Rb2CuX3 (X = Br, Cl). Rb2CuBr3 exhibits quite high mass yield of 90% with high Photoluminescence quantum yield (PLQY) of 59.06%. Importantly, its bright blue emission (90 nm stokes shift) is consistent with the highest optical detection efficiency wavelength range of commercial SiPM. Further characterizations point out that such effective blue emission comes from the recombination of excitons rather than the defects or combination of electron-hole pairs. And the existing strong exciton-photon coupling is conducive to the formation of self-trapped excitons (STEs). Finally, uniform and adjustable area Rb2CuBr3-polystyrene composite films have been successfully obtained. It's fascinating that the films exhibit ultra-flexibility (unchanged performance after multiple bending of 400 times) and excellent stability (subtle attenuation after 30 days of storage in a harsh environment). As an X-ray imaging screen, it presents a sensitive scintillation response to X-ray signals with superior linearity with high-quality images. Therefore, our prepared Rb2CuBr3 scintillator shows great commercial prospects in the field of flexible X-ray detection.

CAP-RAM: A Charge-Domain In-Memory Computing 6T-SRAM for Accurate and Precision-Programmable CNN Inference

A compact, accurate, and bitwidth-programmable in-memory computing (IMC) static random-access memory (SRAM) macro, named CAP-RAM, is presented for energy-efficient convolutional neural network (CNN) inference. It leverages a novel charge-domain multiply-and-accumulate (MAC) mechanism and circuitry to achieve superior linearity under process variations compared to conventional IMC designs. The adopted semi-parallel architecture efficiently stores filters from multiple CNN layers by sharing eight standard 6T SRAM cells with one charge-domain MAC circuit. Moreover, up to six levels of bit-width of weights with two encoding schemes and eight levels of input activations are supported. A 7-bit charge-injection SAR (ciSAR) analog-to-digital converter (ADC) getting rid of sample and hold (S&H) and input/reference buffers further improves the overall energy efficiency and throughput. A 65-nm prototype validates the excellent linearity and computing accuracy of CAP-RAM. A single 512x128 macro stores a complete pruned and quantized CNN model to achieve 98.8% inference accuracy on the MNIST data set and 89.0% on the CIFAR-10 data set, with a 573.4-giga operations per second (GOPS) peak throughput and a 49.4-tera operations per second (TOPS)/W energy efficiency.

Study on impact of ferroelectric layer thickness on RF /analog and linearity parameters in ferroelectric‐FinFET

In this paper, we systematically investigated the effect of ferroelectric (FE) layer thickness (tFE) on transfer and RF/analog characteristics such as transconductance (gm), total gate capacitance (Cgg), cut off frequency (ft), transconductance frequency product, and unilateral power gain in Ferroelectric-FinFET (Fe-FinFET) through 3D TCAD simulator. Further, we highlighted the influence of tFE on linearity figure of merits (FoMs), higher order harmonics (gm2 and gm3), voltage intercept points (VIP2 and VIP3), third order power intercept point (IIP3), third order intermodulation distortion (IMD3), and 1-dB compression point (1-dB comp. Pnt.) for Fe-FinFET. Moreover, the harmonic distortion (HD) parameters like second and third order harmonic distortion (HD2 and HD3) and total harmonic distortion (THD) are reported taking tFE as a parameter. The noise spectral densities of Fe-FinFET taking tFE as parameter is also highlighted. The scaling of tFE has a significant impact on RF/analog parameters and these RF/analog FoMs are a function of tFE. It is also perceived that linearity and HD parameters are dependent on scaling of tFE. Results reveal that with increase in tFE, RF/analog characteristics degrades, whereas, superior linearity FoMs is achieved. It is also seen that HD parameters are improved with increased in tFE value. The increased in tFE leads to increase in noise spectral densities. Finally, the comparative study of electrical parameters of this work with the existing literature is investigated.

Enhancing output linearity of weakly coupled resonators by simple algebraic operations

The mode-localized weakly coupled resonators (WCRs) based on amplitude ratio modulation exhibit great advantages in relative mechanical sensitivity and ambient robustness compared with traditional frequency-modulated resonators. However, due to the inherent strong nonlinearity across the veering point, the further high-performance application of mode localized sensors is still limited. In this paper, for the first time, a new output metric based on the subtraction of reciprocal amplitude ratios (SRAR) is proposed to enhance the output linearity of WCRs. The implementation of this proposal only requires an additional algebraic operation module in subsequent signal processing without changing the device architecture. The linearity of SRAR-based readout is theoretically proven to be significantly better than that of amplitude ratio readout, whether in a vacuum or non-vacuum circumstance. Besides, the numerical calculations and simulations indicate that our proposal maintains superior linearity in the presence of structural non-ideal errors. Finally, the linearity enhancement of the SRAR-based output metric is experimentally verified based on the fabricated prototype of a mode localized accelerometer.

Technologies for the Crystal LED display system

AbstractWe have developed novel active matrix driving technology integrating red–green–blue (RGB) microscale light emitting diodes (micro LEDs) and a microscale integrated circuit (micro IC) in each pixel for the Crystal LED display system. The small size and closely placed RGB subpixels of micro LEDs enabled us to achieve an outstanding contrast ratio even in a bright environment. We also achieved superior luminance linearity and chromaticity stability using accurate pulse width modulation (PWM) driving by micro ICs in the active matrix system. To integrate micro LEDs and micro ICs into a scalable display system, an additional fine‐patterned layer was applied to a conventional printed circuit board (PCB). In addition, with precise tiling technology, we could produce a large‐scale image providing an immersive visual experience.

A high linearity low power low-noise amplifier designed for ultra-wide-band receivers

This paper presents a new ultra-wide band (UWB) CMOS low noise amplifier (LNA) with very high linearity and low power consumption for UWB wireless communication applications, where linearity is a big challenge, due to presence of interference and blocker signals, as well as the in-band harmonics of the desired signal components in the lower part of UWB band. The proposed LNA uses a new combination of saturated NMOS and PMOS transistors to improve both of second order and third order nonlinearities, meanwhile improving the noise performance and DC power consumption. In our design two techniques are integrated in a novel approach: Improved Complementary Derivative Superposition (ICDS) technique and Forward Body Bias (FBB) to reduce the threshold voltage of MOSFET, and hence, lowering the DC power. By utilizing a high-pass filter and common source stage in cascode form, wideband impedance matching and optimal noise figure (NF) have been obtained in the proposed UWB–LNA. The Post-layout simulation of the linearized LNA in a 180 nm RF CMOS process shows NF between 2.5 and 4 dB, gain of 10.8 ± 0.5 dB, and S11 less than −10 dB in the entire 3.1–10.6 GHz band. Total DC power consumption is only 6 mW with 1.2 V supply voltage. The average and the maximum of IIP3 in the UWB band are + 3.84 dBm and + 7.27 dBm, respectively, a superior linearity performance compared to the reported UWB ones. The chip area is 926 mm × 1075 mm, including the supply and ESD ring and the pads.

A General Order Reduction Method of Wideband Digital Predistortion Model Using Attention Mechanism

In wireless networks, for the common in‐phase and quadrature‐phase (I/Q) imbalance in the transmitters, the I/Q branch models of digital predistortion (DPD) need to be identified separately, to improve the linearization effects. The existing order reduction methods of the predistorter are based on the contributions of the complex basis function terms, so as not to deal with the different contributions of I/Q components of the complex basis function terms caused by the separate identification of the I/Q branch models. The separate pruning of the I/Q branch models will increase the complexity. Aiming at this issue, this paper proposes a general order reduction method based on the attention mechanism for the predistortion of the power amplifiers (PAs). This method is suitable for pruning both the traditional models and neural network‐based models. In this method, the attention mechanism is used to evaluate the contributions of the real basis function terms to the predistorted output’s I/Q components through offline training, and the influence of the cross terms of the I/Q branch models is considered. The experimental results based on the comparison with other typical methods under 100 MHz Doherty PA and different I/Q imbalance levels show that this method has superior pruning performance and good linearization ability.

A Validated SPE-UPLC-DAD Method for Quantification of Parabens in Industrial Waste Effluent Water Samples by Using Activated Carbon Nanofiber Modified Filter Paper

The present work describes a sensitive, simple, cost-effective and fast analytical procedure to detect the parabens in industrial waste effluent water samples using novel activated carbon nanofiber (CNF) modified filter paper based solid phase extraction technique coupled with liquid chromatography with photodiode array detector (UPLC-PDA). The carbon nanofiber coated filter paper was used as an adsorbent and also characterized by field emission scanning electron microscope (FESEM) showed superior porous structure. Various factors effecting the adsorption and desorption process were studied. The optimum parameters which improve the efficiency are paper length 1 cm × 2 cm, adsorption time 15 min, eluent methanol, eluent volume 5 mL, sample pH 7, desorption time 2 min, 2% salt addition and 300 rpm stirring rate respectively. The parabens exhibited superior linearity ranging from 0.1-50 ng mL-1. The regression coefficient (R2) value ranging from 0.9981-0.9989. This method exhibited good sensitivity with the quantification limit (LOQ) between 0.5-0.75 ng mL-1 and detection limit (LOD) over the range of 0.1-0.25 ng mL-1. The precision was expressed from the RSDs values from 0.74-0.97 %. The spiked analytes revealed excellent recoveries in the range of 95.30-116.72 % with RSD less than 5.72 % for all the water samples also applied for real samples.

A wideband low power merged balance-balun-LNA and I/Q-mixer

This paper presents a low power wideband RF receiver front-end in CMOS 180 ​nm technology that operates between 0.3 and 4.7 ​GHz. The mixer has a quadrature current commutating gilbert cell configuration that utilizes a novel broadband noise-canceling balanced balun-LNA as the transconductance stage. The noise-canceling balun LNA utilizes an additional noise-reduction technique that enhances its performance noticeably. Both of the common gate and common source stages of balun LNA are matched by employing equal-sized transistors that are biased with the same currents and load resistances. This technique results in superior symmetry, enhanced noise, and linearity performance under reduced power consumption. Post-layout simulation results show that the implemented balun LNA-I/Q-mixer has a conversion gain of 14.05 ​dB. The second and third-order intermodulation intercept points are +42.13 dBm and +4.13 dBm, respectively. The double-sideband NF is 4.74 ​dB. The proposed structure consumes only 6.7 ​mW from a 1.8 ​V supply and occupies a 0.056 ​mm2 chip area.

Modified indirect learning applied to neural network-based pre-distortion of a concurrent dual-band CMOS power amplifier

Current radio communication systems that adopt amplitude and phase modulations demand high linearity and high efficiency. The cascade connection between digital baseband pre-distorter (DPD) and power amplifier (PA) can be a cost-effective solution to guarantee the required linearity without compromising the efficiency. In the design of a DPD for a single band PA, direct learning can be used to extract the pre-inverse parameters or, alternatively, indirect learning can be employed by exchanging the position of the system during the identification procedure to avoid the necessity of a PA model within a closed-loop process. The performance of direct learning is substantially dependent on the accuracy of the behavioral model that replaces the PA. Furthermore, in a practical environment where only an approximation to the inverse is achieved, the linearization capability of the indirect learning is affected by shifting the post-inverse placed after the PA to a pre-inverse located before the PA. For concurrent dual-band PAs, an additional advantage of the indirect approach is that the post-inverse identifications for each band are completely independent of each other. In an authors’ previous work, a comparative analysis between the two learning architectures applied to the linearization of concurrent dual-band PAs was performed based on DPDs modeled by polynomials with memory. This work contributions are the extension of such comparative analysis to DPDs modeled by artificial neural networks, the development of complex-valued three-layer perceptrons suitable for concurrent-dual band DPDs and the introduction of a modified indirect approach to improve the accuracy of previous direct and indirect learnings. Spectre-RF transient simulations are performed in the circuit-under-test described by a wideband 130 nm CMOS PA concurrently stimulated by 2.4 GHz Wi-Fi and 3.5 GHz LTE signals. Reported simulation results show that, in a comparison with the previous direct and indirect learnings with similar output mean powers of about 60 mW, the modified indirect approach provides a superior linearity performance. The modified indirect learning reduces the error vector magnitude (EVM) metric to 0.87% and 1.13% for Wi-Fi and LTE bands, respectively, whereas the indirect and direct learnings achieve EVM equal to or larger than 1.05% and 1.49% for Wi-Fi and LTE bands, respectively.

A Novel Design of High-Temperature Polymer Electrolyte Membrane Acetone Fuel Cell Sensor

In this work, based on the principle of high temperature polymer electrolyte membrane (HT-PEMFC), a first-ever acetone fuel cell sensor (AFCS) is proposed and developed to detect acetone vapor in the environment and human breath for the safety control during industrial processing and the health monitoring and diagnosis for diabatic patients. The newly-developed HT-PEM-ACFS has the intrinsic advantages of insensitivity to relative humidity, excellent water management, and high sensor response and sensitivity due to the use of phosphoric acid (H3PO4) doped porous polybenzimidazole (pPBI) membrane and relatively-high operational temperature (100-180 °C). The optimal HT-PEM-ACFS employs 100-μm-thick pPBI membrane doped in 5 mol L-1 H3PO4 for 72 hours as HT-PEM, showing the best sensor response to acetone vapor at 140 °C. Moreover, the HT-PEM-ACFS with acid-doped pPBI membrane demonstrates superior sensitivity, linearity, and selectivity to acetone over alcohol as opposed to the sensor employed acid-doped solid PBI membrane. The promising sensor performance not merely proves the concept of HT-PEM-ACFS, but also highlights HT-PEM-AFCS as the next-generation sensor technology for acetone vapor measurement in the environment.

A 210-GHz Magnetless Nonreciprocal Isolator in 130-nm SiGe BiCMOS Based on Resistor-Free Unidirectional Ring Resonators

Nonreciprocal components such as circulators, isolators, and gyrators play vital roles in modern communication systems. However, all of them are limited to 0.1 terahertz (THz) due to their poor performances in terms of linearity, loss, and noise at high frequency, making them not amenable for the potential sub-THz/THz operation. In this letter, a 210-GHz nonreciprocal isolator based on the resistor-free unidirectional ring resonators is implemented in a 130-nm SiGe BiCMOS process ( $f_{T}/f_{\mathrm {max}} = 300$ /500 GHz). Thanks to the proposed resistor-free ring resonators, the isolator achieves 1.40-dB loss, 6.7-dB noise figure (NF)/unit, 21.2-dB isolation, and superior linearity. Even compared with the nonreciprocal components operating at a much lower frequency, this structure also exhibits a good performance.

Non-contact strain evaluation for miniature tensile specimens of neutron-irradiated F82H by digital image correlation

• Non-contact strain evaluation by DIC using speckle patterns of surface flaws was applied and reliability of the technique was demonstrated. • Room temperature tensile behavior of Japanese RAFM, F82H, irradiated to ∼70 dpa at 573 K was preliminarily evaluated. • No possible irradiation-induced change of the elastic properties in both axial and transverse directions for irradiated F82H was demonstrated. The small specimen tensile test is commonly used as the basic test to evaluate the irradiation effect on the strength of fusion structural materials after irradiation, and a lot of attempts were made to qualify the data obtained by small size specimen, but the specific attention on the evaluation of strain were not satisfactory given. This study therefore aims to propose a novel non-contact strain measurement technique, based on digital image correlation (DIC) method, for reduced-activation ferritic/martensitic (RAFM) steel, e.g., F82H, as the leading candidate structural material of fusion in-vessel components in Japan. A flat rectangular miniature specimen, e.g., SS-J3 type, was adopted to evaluate non-irradiated and neutron-irradiated tensile properties. In the proposed DIC, very tiny surface machining flaws were recognized by the DIC computation program and utilized to set several pairs of the gauge end points with a fixed gauge length. In case of the room-temperature test, it was clearly demonstrated that this procedure could provide more precise and reliable data compared with the previous approach of the single-scan measurement under floated gauge length. Superior linearity was achieved and recognized DIC points of concern were traceable during the entire period of the test. By applying this technique, superior high-dose stability of elastic properties of F82H was first demonstrated.

Switched-Capacitor Common-Mode Feedback-Based Fully Differential Operational Amplifiers and its Usage in Implementation of Integrators

For stabilizing the common-mode output voltage of fully differential operational amplifiers, switched-capacitor (SC) type of common-mode feedback (CMFB) is a familiar technique. This is appropriate for implementing high-gain wide-swing low-power op-amps due to its benefits of minimum power consumption, superior linearity across a large amplifier output swing range, and improved feedback loop stability in comparison to continuous-time CMFB. However, the usage of SC-CMFB requires careful attention to some realistic aspects, details of many of which are available in literature. Nonetheless, its adverse effect on the op-amp’s differential-mode gain has not been investigated much. The explanation for this effect is the SC-CMFB-induced equivalent resistive loading, and this is particularly significant in amplifiers like folded cascode which are intended to provide a high gain. This issue of drop in op-amp dc gain because of SC-CMFB, and the consequence on the realization of continuous-time and discrete-time forms of integrators utilizing such amplifiers is the topic of discussion in this paper. Relevant analytical derivations and circuit simulations at the transistor level are provided. A couple of design guidelines and circuit topologies for minimizing the loading-induced gain reduction are also presented.

Optimization of a Hetero-Structure Vertical Tunnel FET for Enhanced Electrical Performance and Effects of Temperature Variation on RF/Linearity Parameters

A new hetero-structure vertical tunnel field effect transistor is proposed and investigated using Sentaurus Technology Computer-aided Design simulation. Since the direction of the gate electric field is in alignment with the direction of tunneling of electrons, a higher on state current is attained. Optimization of the geometric dimension of the proposed structure is carried out to yield its optimum performance. As temperature variation affects the device performance, temperature analysis of the proposed structure is performed in which both the off state leakage current and the average subthreshold swing increases with temperature. Further investigation on the influence of temperature variation is carried out in terms of Analog/RF parameters such as transconductance, gate capacitance, cut-off frequency, transconductance frequency product and linearity figure of merits. It is observed that the proposed structure attains superior linearity performance and lower distortion at higher gate voltage with rise in temperature and is less affected by temperature variation at lower gate voltage.

A comprehensive investigation into the structure-property relationship of wax and how it influences the properties of hot melt adhesives

A detailed study was conducted on seven different waxes used in hot melt adhesive formulations together with conventional resins and tackifiers, to characterize the waxes and investigate the effects of wax structure and morphology on the thermal behaviour and basic properties of the resultant hot melt adhesive formulations (HMAs). The waxes selected included representatives of each of the following types: Fischer-Tropsch wax (FT), fully refined paraffin wax (FRP), by-product polyethylene wax (BPPE), microcrystalline wax (microwax), alpha-olefin wax (AO), carnauba wax and first intention polyethylene wax (FIPE). Fourier-transform infrared spectroscopy (FTIR), differential scanning calorimetry (DSC), high temperature size exclusion chromatography (HT-SEC), nuclear magnetic resonance spectroscopy (NMR) and confocal laser scanning microscopy (CLSM) were used as analytical tools to characterize the waxes. Molecular chain architecture as determined by solution 13C NMR highlighted the superior chain linearity of FT wax. Methyl, ethyl and butyl short chain branching were detected in other waxes. Solid-state 13C CP-MAS NMR provided information on the semi-crystalline nature of the waxes. FIPE, AO and Microwax showed significant structural mobility at room temperature as observed by 1H Wideline NMR and was attributed to chain branching and mobile crystalline domains respectively. This was supported by CLSM micrographs. All waxes enhanced crystallinity in both metallocene catalysed polyethylene (mPE) and ethylene-vinyl acetate (EVA) based HMAs. This was confirmed by the characteristic splitting in FTIR bands and increased DSC enthalpies observed for the HMA relative to the neat polymers. Of the formulations containing high melting waxes, FT wax resulted in HMAs with narrower crystallization profiles, an important factor in determining HMA set times. HMA viscosities were found to be dependent on the molecular weight of the wax while the HMA melting temperatures and enthalpies were more dependent on the crystalline morphology of the waxes.

A High Offset Distribution Tolerance High Resolution ISFET Array With Auto-Compensation for Long-Term Bacterial Metabolism Monitoring.

This paper presents a CMOS ion-sensitive-field-effect-transistor (ISFET) array with superior offset distribution tolerance, resolution and linearity for long-term bacterial metabolism monitoring. A floating gate ISFET is adopted as the sensing front end to maximize ion sensitivity and support ultra-long-term measurement. To solve the DC offset issue induced by trapped chargers and drifts in each ISFET sensor, a complementary readout scheme with column offset compensation is proposed. P-type and N-type source followers are combined to cover a wide range of input DC offsets while maintaining small area and high linearity. The DC offset is digitally compensated during signal readout to facilitate global amplification and quantization. Fabricated in 0.18μm standard CMOS process, the ISFET array can tolerate an offset distribution beyond power supply with a linear pH-to-output response. Due to high ion sensitivity and low circuit noise, the whole system achieves a high resolution of 0.017pH. The proposed ISFET system has successfully demonstrated an accurate pH monitoring of normal Escherichis coli growth for 11 hours and its response to antibiotics, showing long-term bacterial metabolism monitoring capability.

High-Fidelity Control of Superconducting Qubits Using Direct Microwave Synthesis in Higher Nyquist Zones

Control electronics for superconducting quantum processors have strict requirements for accurate command of the sensitive quantum states of their qubits. Hinging on the purity of ultra-phase-stable oscillators to upconvert very-low-noise baseband pulses, conventional control systems can become prohibitively complex and expensive when scaling to larger quantum devices, especially as high sampling rates become desirable for fine-grained pulse shaping. Few-GHz radio-frequency digital-to-analog converters (RF DACs) present a more economical avenue for high-fidelity control while simultaneously providing greater command over the spectrum of the synthesized signal. Modern RF DACs with extra-wide bandwidths are able to directly synthesize tones above their sampling rates, thereby keeping the system clock rate at a level compatible with modern digital logic systems while still being able to generate high-frequency pulses with arbitrary profiles. We have incorporated custom superconducting qubit control logic into off-the-shelf hardware capable of low-noise pulse synthesis up to 7.5 GHz using an RF DAC clocked at 5 GHz. Our approach enables highly linear and stable microwave synthesis over a wide bandwidth, giving rise to high-resolution control and a reduced number of required signal sources per qubit. We characterize the performance of the hardware using a five-transmon superconducting device and demonstrate consistently reduced two-qubit gate error (as low as 1.8%) which we show results from superior control chain linearity compared to traditional configurations. The exceptional flexibility and stability further establish a foundation for scalable quantum control beyond intermediate-scale devices.