Subsequent Ion Implantation Research Articles

EPR study of a-Si structural relaxations

A detailed analysis of the EPR line-shape was performed on amorphous silicon (a-Si) samples obtained by Kr + ion implantation. It is shown that the line has predominantly Lorentzian character, however, a small Gaussian component is present as well. We monitored line-shape behavior during the relaxation and subsequent derelaxation process. A strong, fourfold increase in Gaussian component has been observed upon structural relaxation, suggesting spin homogenization throughout the bulk. Subsequent ion implantation derelaxation caused gradual return of the Lorentzian character, i.e. cluster structure of the amorphous phase.

Nitrogen ion implantation of silicon-containing diamond-like carbon (Si-DLC) coatings synthesized by ion beam assisted deposition

Hard, adherent, and low-friction silicon containing diamond-like carbon coatings (Si-DLC) have been synthesized by 40 keV Ar + ion beam assisted deposition (IBAD) of tetraphenyl-tetramethyl-trisiloxane oil, on 8.90 cm (3.5 in) diameter aluminum alloy substrates. The Si-DLC coatings were implanted with nitrogen ions to doses of 3×10 15, 3×10 16, and 3×10 17 ions/cm 2. The Si-DLC coating synthesis and the subsequent nitrogen ion implantation at 80 keV took place in a non-mass analyzed ion implanter. The thickness of the implanted coatings, measured with the aid of a profilometer, remained equal to the thickness of the unimplanted coating, and photon tunneling microscopy showed some surface roughening from the implantation process. The unlubricated steel ball-on-disk friction coefficient increased with increasing implant dose. However, the wear rate of the coating, determined with the aid of an optical microscope and a stylus profilometer, decreased with increasing implant dose.

Hydrogen-implantation-induced activation in phosphorus-implanted silicon

A partial activation of phosphorus -implanted (100) silicon substrates was found to be induced by a subsequent hydrogen ion implantation at . The energy, dose and dose rate dependences of activation were studied using spreading resistance, secondary-ion mass spectroscopy and transmission electron microscopy. In the investigated range of 10 to 60 keV we found 30 keV to be the most suitable implantation energy for activation of -implanted samples at 80 keV without changing the phosphorus depth profile. The activation had a depth profile which was similar to the hydrogen depth profile immediately after implantation. The activation proceeded with increasing dose and decreasing dose rate. A reduction in the density of residual defects was observed with decreasing dose rate. Further electrical activation was achieved by annealing at with a sharper carrier concentration profile for -implanted samples than for just -implanted samples. The activation and annealing mechanism is discussed in view of the contribution of the elastic collision process between ions and substrate atoms.

Near-edge x-ray absorption fine structure study of bonding modifications in BN thin films by ion implantation

Near-edge x-ray absorption fine structure (NEXAFS) has been used to study the defect content and the bonding modifications induced in BN thin films by ion implantation. The initial films were hexagonal-like BN grown on Si(100) by pulsed laser deposition. Subsequent ion implantation with N2+ at 180 keV induces the formation of a significant proportion of sp3 bonding (cubic-like), and the formation of nitrogen void defects in the remaining sp2 BN. These modifications in the bonding of a film lacking long range order can only be distinguished with a local order technique like NEXAFS.

Hydrocarbon polymeric quantum-confinement quantum-wires embedded in diamond via proton-lithography ion-implantation chemical-reaction di… poly-acetylene: nano-electronics & nano-photonics interconnects embedded in optimal heat-sink alternative to gigascale si integration? very-high-tc hyper-(if not super)-conductivity???

Abstract Original proton-diamond (H+-C) ion-implantation chemical-reaction proton-lithography fabrication of Zeller and Dreschoff 1. 1)much later patented 2. 2)of di-(if not poly)-acetylene quantum-confinement quantumwires, quantum-dots, quantum-boxes, … in optimal thermal-property heat-sink diamond with huge sharp drop in electrical-resistance(in, channel) from nominal 250–500. 10+6 ohm down to 500 ohm(if not 10−6 ohm,and counting…), a factor of at least 10 (if not 10+12,and counting…) may indeed prestage the called for 3. 3)“nano-electronics and nano-photonics alternative to gigascale Si integration” with sub-micron resolution rapid beam-writing:passive-interconnects;resistors;capacitors; …; integrated-circuits(IC's);printed-circuits(PC's);packaging;for hybrid nano-electric + nano-photonic:quantum-logic;quantum-confinement (dots,wires,wells,boxes,…) with charge-coupled device(CCD) photonicswitching/coupling 4. 3)called for by Mahler among others Possibility of very-high-T hyper-(if not super)-conductivity of such dst =(1+1)=2 “filimentation” di. Poly-acetylene, 5. 4)quantum-confined quantum-wires raised by Klimontovich 6. 5)Rabinowitz, 7. 6)unverifiably claimed by Archangorodskii et. al., 8. 7)Vahldiek 9. 8)Burgoine 10. 9)(for respectively:perpendicular holes in polypropylene-oxide thin-films,sintered TiBx, and Bi filiments) exactly identical to predictions of Bose-Einstein condensation of light (paired helicity) in dst =(1+1)=2 “narrow-channels” fiber-optics quantum-optics of Chiao,Deutsch and Garrison 11. 10)(“the diphoton”), Cheng, 12. 11)Winterberg 13. 12)and in dst =(3+1)=4 and perhaps dst =(1+1) =2 of space-time of general-relativity in the Beckenstein-Hawking-Unruh effect predictions of Gerlach 14. 13)to “superlight” superfluidity of “liquidlight” in “supercoherence” “superguiding” state nearly identical predictions are explored,most especially their deep dimensionality-dominated(“filim en tation”) in even-integer spacetime-dimensions only !) interrelationships. Cheng 15. 14)fractal-geometry of radiation-damage. Collision-cascades localspike -to- global-spike crossover via Siegel 16. 15)Synergetics Paradigm & Dichotomy(SPD). He 17. 16)fractional optical-spectrum technique applied to radiation-damage ion-implantation(yielding for instance danglingbond density(available for HC chemical-reaction after protonthermal ization down to chemical-bond energy-scales) is indicated to measure and eventually optimize dimer di-acetylene polymerization into poly-acetylene, with possibility of subsequent ion-implantation heavy-doping to approach Little-Heeger-… predictions of possibility of organic-polymer true superconductivity to very high-T in heavily-doped polyacetylene. Lyamkin-Anan'in-Vershchagin-Chipenko-Minoru-… 18. 17)TNT explosivedetonation fabrication of sub-100 A∘ diamond. ultra-fine powder C: N,H,O out of TNT's very own C,N,H,0 with,10+19 carriers/cm3 C(81.2%): N(2.1%),0(15.5%),H(1.2%) huge yields of semiconducting diamond freestanding/unsupported quantum-confined quantum-dots nano-meso-scopic-scale, could be prime targets for Zeller-Dreschoff di… poly-acetylene ion-implantation. Notwithstanding Rhee et. al. 19. 18)questions of:firstorder versus second-order reactions,homogeneous versus heterogenous nucleation kinetics,possibility of fullerene formation in explosions, hydroxide versus sulphate catalysis for yield enhancement/optimization, dichotomy contradictions/questions, such possibility is explored.

Behavior of nitrogen implanted into Zr at high fluence

In order to evaluate the depth profiles of ions implanted at high fluence, the behavior of nitrogen implanted into Zr samples was studied in detail by nuclear reaction analysis using the 15N(p, αγ) 12C reaction at E p = 429 keV. Zr samples were implanted with 15N ions of 50 keV to a total fluence of 10×10 17 ions/cm 2 at room temperature and 500°C. It was found that the nitrogen concentration exceeded 50% on both sides of the mean projected range ( R p) for a fluence of 7×10 17 ions/cm 2. The layers of over-stoichiometry were removed by subsequent ion implantation and then a trapezoidal profile was obtained for a fluence of 10×10 71 ions/cm 2. Moreover, 14N and 15N implantations were superimposed on Zr samples in order to measure the atomic migration of pre-implanted 15N caused by the subsequent 14N implantation. It was found that nitrogen atoms near R p moved to both sides of R p by the collision cascade and the peak of the depth profile of 15N split into two peaks with increasing 14N ion fluence. These experimental results on the depth profile were compared with the theoretical results obtained by Monte Carlo simulation of the dynamic SASAMAL code, in which excess atoms over stoichiometry are assumed to diffuse depending on the degree of the radiation damage. Good agreement with theoretical results was obtained.

Corrosion stability of TiN prepared by ion implantation and PVD

Thermodynamic U/pH diagrams for TiN were calculated which predict only a small range of stability in alkaline solutions. In contrast, electrochemical experiments in solutions of different pH values show high stability against oxidation and reduction. The properties of TiN layers were investigated by potentiodynamic, potentiostatic and open circuit experiments. The observations were compared to results from XPS. Corrosion measurements with nitrogen implanted Ti revealed corrosion resistance even in hot concentrated acids. This feature could not be found for TiN prepared by physical vapour deposition. The higher corrosion rates of PVD samples in contrast to layers formed by ion implantation refer to their columnar structure. Subsequent ion implantation of TiN-PVD decreases the current densities by a factor of 10.

窒素イオン注入によるＺｒＮ層の形成と熱処理効果

To study the formation process and thermal stability of ZrN layers under nitrogen ion implantation, zirconium films have been implanted with 15N2 ions of 100keV at doses of from 1×1017 to 10×1017N/cm2, at room temperature and 500°C. Effects of post-implantation annealing were also investigated. The depth distribution of the implanted nitrogen was measured in detail by nuclear reaction analysis using the 15N (p, α γ)12C reaction at Ep=429keV. The structure of the implanted layers was measured by thin film XRD, and hardness was measured by a Knoop microhardness indenter. It was found that nitrogen concentration exceeded 50% in the layers that were just shallower and deeper than the mean projected range of nitrogen for a dose of 7×1017N/cm2. The overstoichiometric layers were eliminated by the subsequent ion implantation and a trapezoidal distribution was obtained at a dose of 10×1017N/cm2. The distribution of nitrogen implanted at 500°C can be explained by thermal diffusion, precipitation of nitrogen in the surface layer, and sputtering by ion bombardment. The structure of the ZrN layer produced by nitrogen implantation at room temperature was improved by 500°C annealing, but thermal diffusion of the implanted nitrogen became obvious at 700°C annealing.

Focused ion beam stimulated deposition of organic compounds

The successful deposition of an opaque organic-based film for a clear defect photomask repair process has been reported. The process relies upon the polymerization of styrene stimulated by a focused ion beam, with subsequent cross-linking and ion implantation. Since that report, a class of compounds has been identified which are all suitable as precursors for film deposition with a focused ion beam. More importantly, this class of compounds defines the key chemical structures necessary for film deposition under focused ion beam conditions (high-current density/high-sputter yield). A necessary requirement for film formation is to supply the precursor to the substrate at a particle current density equivalent to that of the ion beam current density. This condition is not, however, a sufficient one: the chemistry which determines the bonding of the precursor to the substrate is the key to deposition. The combination of an aromatic ring with a pendant double or triply bonded substituent satisfies the chemical criteria. The incident molecules bond with high efficiency through the vinyl bond to radical sites created by ion bombardment. Subsequent ion bombardment at those sites cause the aromatic ring to open, leaving a highly reactive CnHn chain bonded to the surface. Vibrational excitation may cause fragmentation of this chain, but cross-linking will also occur, resulting in net deposition. The aromatic ring thus supplies a sufficient number of carbon atoms per incident precursor molecule to insure net deposition. Successful deposition has been obtained with styrene, phenylacetylene, indene, and benzofuran, all of which have a conjugated, unsaturated bond adjacent to an aromatic ring. No deposition, or net sputtering of the substrate was observed for the analogous class of molecules, benzene, toluene, ethylbenzene, and indane, all of which have an aromatic ring but lack the unsaturated pendant group necessary for efficient bonding to the surface.

Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substrates

Lateral solid phase epitaxy (L-SPE) of amorphous Si (a-Si) films onto nonplanar SiO2 patterns on Si(100) substrates was investigated. The patterns were formed by local oxidation of silicon (LOCOS) and the thickness of the SiO2 films ranged from 60 to 470 nm. The L-SPE characteristics similar to those for planar patterns were observed in dense a-Si films prepared by high-temperature vacuum deposition and subsequent ion implantation. The maximum L-SPE lengths onto the LOCOS patterns were 4.5, 6.5, and 44 μm in undoped, B-doped, and P-doped samples, respectively.

The surface binding energy for a ternary alloy produced by ion implantation

In this paper the surface binding energy model proposed by Reynolds for a binary alloy has been extended to a ternary system. From this model extension the steady state atomic surface fractions were calculated for a ternary surface alloy to be prepared by ion implanting a binary alloy of known composition. These predictions were compared with the results of the subsequent ion implantation experiments. The total implantation process was monitored by the observation of light emitted through de-excitation processes from sputtered neutral atoms. The experimental results reported are for nickel-chromium alloy implanted with 90 keV copper and tantalum and were analyzed using Rutherford backscattering, particle induced X-ray emission, and Auger surface analysis. From these results the partial sputtering yield for each component, net sputtering yield and surface atomic fractions were determined, and then compared with the predicted values. The different analytical techniques show consistent agreement within experimental error and there is reasonable agreement between the experimental results and the predicted values.

Technique for measuring the moisture content of sealed IC packages : Charles H. Windisch, Jr. and Robert P. Merrett. Semiconductor Int. 80 (December 1983)

Original proton-diamond (H+-C) ion-implantation chemical-reaction proton-lithography fabrication of Zeller and Dreschoff 1.1)much later patented2.2)of di-(if not poly)-acetylene quantum-confinement quantumwires, quantum-dots, quantum-boxes, … in optimal thermal-property heat-sink diamond with huge sharp drop in electrical-resistance(in, channel) from nominal 250–500. 10+6 ohm down to 500 ohm(if not 10−6 ohm,and counting…), a factor of at least 10 (if not 10+12,and counting…) may indeed prestage the called for3.3)“nano-electronics and nano-photonics alternative to gigascale Si integration” with sub-micron resolution rapid beam-writing:passive-interconnects;resistors;capacitors; …; integrated-circuits(IC's);printed-circuits(PC's);packaging;for hybrid nano-electric + nano-photonic:quantum-logic;quantum-confinement (dots,wires,wells,boxes,…) with charge-coupled device(CCD) photonicswitching/coupling4.3)called for by Mahler among othersPossibility of very-high-T hyper-(if not super)-conductivity of such dst =(1+1)=2 “filimentation” di. Poly-acetylene,5.4)quantum-confined quantum-wires raised by Klimontovich6.5)Rabinowitz,7.6)unverifiably claimed by Archangorodskii et. al.,8.7)Vahldiek9.8)Burgoine10.9)(for respectively:perpendicular holes in polypropylene-oxide thin-films,sintered TiBx, and Bi filiments) exactly identical to predictions of Bose-Einstein condensation of light(paired helicity) in dst =(1+1)=2 “narrow-channels” fiber-optics quantum-optics of Chiao,Deutsch and Garrison11.10)(“the diphoton”), Cheng,12.11)Winterberg13.12)and in dst =(3+1)=4 and perhaps dst =(1+1) =2 of space-time of general-relativity in the Beckenstein-Hawking-Unruh effect predictions of Gerlach14.13)to “superlight” superfluidity of “liquidlight” in “supercoherence” “superguiding” state nearly identical predictions are explored,most especially their deep dimensionality-dominated(“filim en tation”) in even-integer spacetime-dimensions only!) interrelationships. Cheng15.14)fractal-geometry of radiation-damage. Collision-cascades localspike -to- global-spike crossover via Siegel16.15)Synergetics Paradigm & Dichotomy(SPD). He17.16)fractional optical-spectrum technique applied to radiation-damage ion-implantation(yielding for instance danglingbond density(available for HC chemical-reaction after protonthermal ization down to chemical-bond energy-scales) is indicated to measure and eventually optimize dimer di-acetylene polymerization into poly-acetylene, with possibility of subsequent ion-implantation heavy-doping to approach Little-Heeger-… predictions of possibility of organic-polymer true superconductivity to very high-T in heavily-doped polyacetylene.Lyamkin-Anan'in-Vershchagin-Chipenko-Minoru-…18.17)TNT explosivedetonation fabrication of sub-100 A∘ diamond. ultra-fine powder C: N,H,O out of TNT's very own C,N,H,0 with,10+19 carriers/cm3 C(81.2%): N(2.1%),0(15.5%),H(1.2%) huge yields of semiconducting diamond freestanding/unsupported quantum-confined quantum-dots nano-meso-scopic-scale, could be prime targets for Zeller-Dreschoff di… poly-acetylene ion-implantation. Notwithstanding Rhee et. al.19.18)questions of:firstorder versus second-order reactions,homogeneous versus heterogenous nucleation kinetics,possibility of fullerene formation in explosions, hydroxide versus sulphate catalysis for yield enhancement/optimization, dichotomy contradictions/questions, such possibility is explored.

GRAIN BOUNDARY DIFFUSION IN POLYCRYSTALLINE SILICON FILMS ON SiO2

The enhanced grain boundary diffusion in cw laser processed LPCVD polycrystalline silicon films on insulating SiO2 has been investigated and the grain boundary diffusion coefficient D' for Phosphorus has been determined. Mesa diodes were fabricated in the large grain poly-Si films by standard photolithographic and etching methods and subsequent ion implantation. The electron beam induced current mode (EBIC) of the SEM allowed direct measurement of the dopant diffusion length along the grain boundaries intersecting the p-n junction. We have found a t¼ dependence of the penetration depth and Arrhenius behavior for the temperature dependence of the diffusion coefficient. The numerical evaluation of the experimental data is based on Whipple's exact solution of the grain boundary diffusion problem.

Direct Measurement of Cw Laser-Induced Crystal Growth Dynamics by Time-Resolved Optical Reflectivity

ABSTRACTWe report the use of time-resolved optical reflectivity to directly monitor the dynamics of cw laser-induced solid phase epitaxy (SPE) of thin films. This in situ measurement technique utilizes optical interference effects between light reflected from the surface of a sample and from an advancing interface to provide continuous temporal and spatial resolution of crystal growth processes. SPE growth rates of ionimplanted films which are five orders of magnitude faster than previously observed can be induced and accurately measured with the laser method. Arsenic enhances the SPE rate, and spatially resolved measurements show that the growth rate for arsenic implanted films varies in accordance with the ionimplantation profile. Results are reported for silicon selfimplanted samples with and without subsequent arsenic ion implantation, and for silicon samples directly implanted with arsenic.

Evolution of the characteristics and performances of implantation machines : G. Guernet. Acta Electronica19 (1), 13 (1976). (In French only)

Original proton-diamond (H+-C) ion-implantation chemical-reaction proton-lithography fabrication of Zeller and Dreschoff 1.1)much later patented2.2)of di-(if not poly)-acetylene quantum-confinement quantumwires, quantum-dots, quantum-boxes, … in optimal thermal-property heat-sink diamond with huge sharp drop in electrical-resistance(in, channel) from nominal 250–500. 10+6 ohm down to 500 ohm(if not 10−6 ohm,and counting…), a factor of at least 10 (if not 10+12,and counting…) may indeed prestage the called for3.3)“nano-electronics and nano-photonics alternative to gigascale Si integration” with sub-micron resolution rapid beam-writing:passive-interconnects;resistors;capacitors; …; integrated-circuits(IC's);printed-circuits(PC's);packaging;for hybrid nano-electric + nano-photonic:quantum-logic;quantum-confinement (dots,wires,wells,boxes,…) with charge-coupled device(CCD) photonicswitching/coupling4.3)called for by Mahler among othersPossibility of very-high-T hyper-(if not super)-conductivity of such dst =(1+1)=2 “filimentation” di. Poly-acetylene,5.4)quantum-confined quantum-wires raised by Klimontovich6.5)Rabinowitz,7.6)unverifiably claimed by Archangorodskii et. al.,8.7)Vahldiek9.8)Burgoine10.9)(for respectively:perpendicular holes in polypropylene-oxide thin-films,sintered TiBx, and Bi filiments) exactly identical to predictions of Bose-Einstein condensation of light(paired helicity) in dst =(1+1)=2 “narrow-channels” fiber-optics quantum-optics of Chiao,Deutsch and Garrison11.10)(“the diphoton”), Cheng,12.11)Winterberg13.12)and in dst =(3+1)=4 and perhaps dst =(1+1) =2 of space-time of general-relativity in the Beckenstein-Hawking-Unruh effect predictions of Gerlach14.13)to “superlight” superfluidity of “liquidlight” in “supercoherence” “superguiding” state nearly identical predictions are explored,most especially their deep dimensionality-dominated(“filim en tation”) in even-integer spacetime-dimensions only!) interrelationships. Cheng15.14)fractal-geometry of radiation-damage. Collision-cascades localspike -to- global-spike crossover via Siegel16.15)Synergetics Paradigm & Dichotomy(SPD). He17.16)fractional optical-spectrum technique applied to radiation-damage ion-implantation(yielding for instance danglingbond density(available for HC chemical-reaction after protonthermal ization down to chemical-bond energy-scales) is indicated to measure and eventually optimize dimer di-acetylene polymerization into poly-acetylene, with possibility of subsequent ion-implantation heavy-doping to approach Little-Heeger-… predictions of possibility of organic-polymer true superconductivity to very high-T in heavily-doped polyacetylene.Lyamkin-Anan'in-Vershchagin-Chipenko-Minoru-…18.17)TNT explosivedetonation fabrication of sub-100 A∘ diamond. ultra-fine powder C: N,H,O out of TNT's very own C,N,H,0 with,10+19 carriers/cm3 C(81.2%): N(2.1%),0(15.5%),H(1.2%) huge yields of semiconducting diamond freestanding/unsupported quantum-confined quantum-dots nano-meso-scopic-scale, could be prime targets for Zeller-Dreschoff di… poly-acetylene ion-implantation. Notwithstanding Rhee et. al.19.18)questions of:firstorder versus second-order reactions,homogeneous versus heterogenous nucleation kinetics,possibility of fullerene formation in explosions, hydroxide versus sulphate catalysis for yield enhancement/optimization, dichotomy contradictions/questions, such possibility is explored.