The thermophotovoltaic cells working under 300–500 K heat sources are fabricated by bonding Bi2Te3 and Si wafers. The performance of the cells is seriously affected by the strong intrinsic excitation in Bi2Te3, which leads to the slight split of the Fermi energy level and the weak absorption in the very narrow depletion region of Bi2Te3/Si heterojunction. The valence band offset at the interface between Bi2Te3 and Si, which limits the transportation of excited holes and the thickness of Bi2Te3 sheet are also important to affect the performance of the cells. Although the conversion efficiency of the thermophotovoltaic cells is low, this work provides a method to fabricate Bi2Te3/Si low‐temperature thermophotovoltaic cells.
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