Spin-orbit Relaxation Research Articles

Tunable two-dimensional superconductivity and spin-orbit coupling at the EuO/KTaO3(110) interface

Unconventional quantum states, most notably the two-dimensional (2D) superconductivity, have been realized at the interfaces of oxide heterostructures where they can be effectively tuned by the gate voltage (VG). Here we report that the interface between high-quality EuO (111) thin film and KTaO3 (KTO) (110) substrate shows superconductivity with onset transition temperature T_{{{mathrm{c}}}}^{{{{mathrm{onset}}}}} = 1.35 K. The 2D nature of superconductivity is verified by the large anisotropy of the upper critical field and the characteristics of a Berezinskii–Kosterlitz-Thouless transition. By applying VG, T_{{{mathrm{c}}}}^{{{{mathrm{onset}}}}} can be tuned from ~1 to 1.7 K; such an enhancement can be possibly associated with a boosted spin-orbit energy varepsilon _{{{{mathrm{so}}}}} = hbar /tau _{{{{mathrm{so}}}}}, where τso is the spin-orbit relaxation time. Further analysis of τso based on the upper critical field (Hc2) and magnetoconductance reveals complex nature of spin-orbit coupling (SOC) at the EuO/KTO(110) interface with different mechanisms dominating the influence of SOC effects on the superconductivity and the magnetotransport in the normal state. Our results demonstrate that the SOC should be considered an important factor in determining the 2D superconductivity at oxide interfaces.

Photoluminescence of Double Quantum Wells: Asymmetry and Excitation Laser Wavelength Effects

Circularly polarized photoluminescence (PL) spectroscopy measured at 19 K on GaAs/AlGaAs symmetric and asymmetric double quantum wells (DQW) is reported. The PL is obtained by exciting the sample with a circularly polarized (left or right) laser in order to create an initial unbalanced distribution of electron spins in the conduction band and, in this way, obtain the electron spin lifetime . The effects of the excitation laser wavelength are estimated by exciting with laser wavelengths of 701.0, 787.0, 801.5, and 806.5 nm. The increase of with the excitation wavelength is attributed to the lower initial quasimomentum k of the excited carriers, which also reduces spin–orbit relaxation processes. is found to be higher in asymmetric DQWs: this is attributed to the wider QWs in these samples, which reduces spin relaxation due to the Dresselhaus mechanism. In addition, a smaller contribution from the Rashba mechanism is also detected by comparing samples with built‐in electric fields of different orientations defined by doped barrier layers.

Gate tunable Rashba spin-orbit coupling at CaZrO3/SrTiO3 heterointerface

High mobility quasi two-dimensional electron gas (2DEG) found at the CaZrO3/SrTiO3 nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics. Here we report that the carrier density and mobility at low temperature can be tuned by gate voltage at the CaZrO3/SrTiO3 interface. Furthermore, the magnitude of Rashba spin–orbit interaction can be modulated and increases with the gate voltage. Remarkably, the diffusion constant and the spin–orbit relaxation time can be strongly tuned by gate voltage. The diffusion constant increases by a factor of ∼ 19.98 and the relaxation time is reduced by a factor of over three orders of magnitude while the gate voltage is swept from –50 V to 100 V. These findings not only lay a foundation for further understanding the underlying mechanism of Rashba spin–orbit coupling, but also have great significance in developing various oxide functional devices.

Dynamics of Photoexcited Cs Atoms Attached to Helium Nanodroplets.

We present an experimental study of the dynamics following the photoexcitation and subsequent photoionization of single Cs atoms on the surface of helium nanodroplets. The dynamics of excited Cs atom desorption and readsorption as well as CsHe exciplex formation are measured by using femtosecond pump-probe velocity map imaging spectroscopy and ion time-of-flight spectrometry. The time scales for the desorption of excited Cs atoms off helium nanodroplets as well as the time scales for CsHe exciplex formation are experimentally determined for the 6p states of Cs. For the 6p 2Π1/2 state, our results confirm that the excited Cs atoms only desorb from the nanodroplet when the excitation wavenumber is blue-shifted from the 6p 2Π1/2 ← 6s 2Σ1/2 resonance. Our results suggest that the dynamics following excitation to the 6p 2Π3/2 state can be described by an evaporation-like desorption mechanism, whereas the dynamics arising from excitation to the 6p 2Σ1/2 state is indicative for a more impulsive desorption process. Furthermore, our results suggest a helium-induced spin-orbit relaxation from the 6p 2Σ1/2 state to the 6p 2Π1/2 state. Our findings largely agree with the results of time-dependent 4He density functional theory (DFT) simulations published earlier [Eur. Phys. J. D 2019, 73, 94].

Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties

We investigate the electronic structure of graphene on a series of 2D hexagonal nitride insulators hXN, X = B, Al, and Ga, with DFT calculations. A symmetry-based model Hamiltonian is employed to extract orbital parameters and spin-orbit coupling (SOC) from the low-energy Dirac bands of proximitized graphene. While commensurate hBN induces a staggered potential of about 10 meV into the Dirac bands, less lattice-matched hAlN and hGaN disrupt the Dirac point much less, giving a staggered gap below 100 $\mu$eV. Proximitized intrinsic SOC surprisingly does not increase much above the pristine graphene value of 12 $\mu$eV; it stays in the window of (1-16) $\mu$eV, depending strongly on stacking. However, Rashba SOC increases sharply when increasing the atomic number of the boron group, with calculated maximal values of 8, 15, and 65 $\mu$eV for B, Al, and Ga-based nitrides, respectively. The individual Rashba couplings also depend strongly on stacking, vanishing in symmetrically-sandwiched structures, and can be tuned by a transverse electric field. The extracted spin-orbit parameters were used as input for spin transport simulations based on Chebyshev expansion of the time-evolution of the spin expectation values, yielding interesting predictions for the electron spin relaxation. Spin lifetime magnitudes and anisotropies depend strongly on the specific (hXN)/graphene/hXN system, and they can be efficiently tuned by an applied external electric field as well as the carrier density in the graphene layer. A particularly interesting case for experiments is graphene/hGaN, in which the giant Rashba coupling is predicted to induce spin lifetimes of 1-10 ns, short enough to dominate over other mechanisms, and lead to the same spin relaxation anisotropy as observed in conventional semiconductor heterostructures: 50\%, meaning that out-of-plane spins relax twice as fast as in-plane spins.

Finite-frequency spin susceptibility and spin pumping in superconductors with spin-orbit relaxation

Static spin susceptibility of superconductors with spin-orbit relaxation has been calculated in the seminal work of A.A. Abrikosov and L.P. Gor'kov [Sov. Phys. JETP, {\bf 15}, 752 (1962)]. Surprisingly the generalization of this result to finite frequencies has not been done despite being quite important for the modern topic of superconducting spintronics. The present paper fills this gap by deriving the analytical expression for spin susceptibility. The time-dependent spin response is shown to be captured by the quasiclassical Eilenberger equation with collision integrals corresponding to the ordinary and spin-orbit scattering. Using the developed formalism we study the linear spin pumping effect between the ferromagnet and the adjacent superconducting film. The consequences for understanding recent experiments demonstrating the modification of Gilbert damping by the superconducting correlations are discussed.

Heterostructures of graphene and hBN: Electronic, spin-orbit, and spin relaxation properties from first principles

We perform extensive first-principles calculations for heterostructures composed of monolayer graphene and hexagonal boron nitride (hBN). Employing a symmetry-derived minimal tight-binding model, we extract orbital and spin-orbit coupling (SOC) parameters for graphene on hBN, as well as for hBN encapsulated graphene. Our calculations show that the parameters depend on the specific stacking configuration of graphene on hBN. We also perform an interlayer distance study for the different graphene/hBN stacks to find the corresponding lowest energy distances. For very large interlayer distances, one can recover the pristine graphene properties, as we find from the dependence of the parameters on the interlayer distance. Furthermore, we find that orbital and SOC parameters, especially the Rashba one, depend strongly on an applied transverse electric field, giving a rich playground for spin physics. Armed with the model parameters, we employ the Dyakonov-Perel formalism to calculate the spin relaxation in graphene/hBN heterostructures. We find spin lifetimes in the nanosecond range, in agreement with recent measurements. The spin relaxation anisotropy, being the ratio of out-of-plane to in-plane spin lifetimes, is found to be giant close to the charge neutrality point, decreasing with increasing doping, and being highly tunable by an external transverse electric field. This is in contrast to bilayer graphene in which an external field saturates the spin relaxation anisotropy.

4s to 5s and 4p photoexcitation dynamics of K atoms from the surface of helium nanodroplets: a theoretical study

We study the photodissociation of the potassium atom from a superfluid helium nanodroplet upon 5s 2S or 4p 2P excitation using the time-dependent helium density functional method (He-TDDFT). The importance of quantum effects is assessed by comparing the absorption spectrum obtained for a classical or a quantum description of the K atom. In the case of the 5s 2S ← 4s 2S excitation the difference is rather large, and we use a quantum description for the ensuing direct dissociation dynamics. In the case of the 4p 2P ← 4s 2S absorption spectrum, the difference is much smaller, hence a classical description of K is used to describe 4p 2P excitation dynamics. Excitation to the 4p 2Σ1/2 state leads to the direct dissociation of the K atom, while the 4p 2Π3/2 state initially leads to the formation of an exciplex and the 4p 2Π1/2 state to a bouncing atom above the droplet surface. Remarkably, electronic relaxation can be observed for the latter two states, leading to spin-orbit relaxation and the binding of the initially departing one-atom excimer as a ring excimer for the 2P3/2 state and to the formation of a bound, ring excimer for the 2Π1/2 state.

Modified spin relaxation mechanism by tunable coupling between interfacial two-dimensional electron gases in correlated oxide heterostructures

Control of spin relaxation is an important prerequisite for the successful implementation of spintronic devices in a materials system. We realized two directly coupled two-dimensional (2D) electron gases (2DEG-2DEG) in a $\mathrm{LaAl}{\mathrm{O}}_{3}\text{\ensuremath{-}}\mathrm{SrTi}{\mathrm{O}}_{3}$ heterostructure system and observed a modification of the spin relaxation mechanism by varying the coupling strength. A strong enhancement of the carrier density for separation distances below a critical thickness of 6 unit cells was revealed. Electric-field-dependent analysis demonstrated tuning from positive to negative magnetoresistance for large separation distances of 10 unit cells indicating Rashba-type spin-orbit coupling, while for small separation distances of only 1 unit cell the magnetoresistance always remained positive. Analysis of the spin-orbit relaxation time and elastic scattering time revealed a modification of the spin relaxation mechanism between Elliott-Yafet and D'yakonov-Perel' for separation distances of 1 and 10 unit cells, respectively. The tunable spin relaxation fits very well with the presence (or absence) of structural inversion symmetry in our coupled 2DEGs system for different separation distances.

Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization

We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our low-mobility heterostructures is Elliott-Yafet and not Dyakonov-Perel in the form of the Rashba or Dresselhaus SOI as previously suggested. We compare our findings with recent work on this material system and show that the SOI length lies within the same range. The SOI length may be controlled using an electrostatic gate, opening up prospects for developing spintronic applications.

Spin-orbit coupling and spin relaxation in phosphorene: Intrinsic versus extrinsic effects

First-principles calculations of the essential spin-orbit and spin relaxation properties of phosphorene are performed. Intrinsic spin-orbit coupling induces spin mixing with the probability of $b^2 \approx 10^{-4}$, exhibiting a large anisotropy, following the anisotropic crystalline structure of phosphorene. For realistic values of the momentum relaxation times, the intrinsic (Elliott--Yafet) spin relaxation times are hundreds of picoseconds to nanoseconds. Applying a transverse electric field (simulating gating and substrates) generates extrinsic $C_{2v}$ symmetric spin-orbit fields in phosphorene, which activate the D'yakonov--Perel' mechanism for spin relaxation. It is shown that this extrinsic spin relaxation also has a strong anisotropy, and can dominate over the Elliott-Yafet one for strong enough electric fields. Phosphorene on substrates can thus exhibit an interesting interplay of both spin relaxation mechanisms, whose individual roles could be deciphered using our results.

Experimental study of the Cs diode pumped alkali laser operation with different buffer gases

Cs diode pumped alkali laser (DPAL) operation using ethane, methane, and mixtures of these hydrocarbons with the noble gases He and Ar as a buffer gas for spin–orbit relaxation was studied in this work. The best Cs DPAL performance in continuous wave operation with flowing gain medium was achieved using pure methane, pure ethane, or a mixture of ethane (minimum of 200 Torr) and He with a total buffer gas pressure of 300 Torr.

Upper Critical Field and Kondo Effects in Fe(Te0.9Se0.1) Thin Films by Pulsed Field Measurements.

The transition temperatures of epitaxial films of Fe(Te0:9Se0:1) are remarkably insensitive to applied magnetic field, leading to predictions of upper critical fields Bc2(T = 0) in excess of 100 T. Using pulsed magnetic fields, we find Bc2(0) to be on the order of 45 T, similar to values in bulk material and still in excess of the paramagnetic limit. The same films show strong magnetoresistance in fields above Bc2(T), consistent with the observed Kondo minimum seen above Tc. Fits to the temperature dependence in the context of the WHH model, using the experimental value of the Maki parameter, require an effective spin-orbit relaxation parameter of order unity. We suggest that Kondo localization plays a similar role to spin-orbit pair breaking in making WHH fits to the data.

Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3

We have studied angle dependent magnetoresistance of Bi2Te3 thin film with field up to 9 T over 2–20 K temperatures. The perpendicular field magnetoresistance has been explained by the Hikami-Larkin-Nagaoka theory alone in a system with strong spin-orbit coupling, from which we have estimated the mean free path, the phase coherence length, and the spin-orbit relaxation time. We have obtained the out-of-plane spin-orbit relaxation time to be small and the in-plane spin-orbit relaxation time to be comparable to the momentum relaxation time. The estimation of these charge and spin transport parameters are useful for spintronics applications. For parallel field magnetoresistance, we have confirmed the presence of Zeeman effect which is otherwise suppressed in perpendicular field magnetoresistance due to strong spin-orbit coupling. The parallel field data have been explained using both the contributions from the Maekawa-Fukuyama localization theory for non-interacting electrons and Lee-Ramakrishnan theory of electron-electron interactions. The estimated Zeeman g-factor and the strength of Coulomb screening parameter agree well with the theory. Finally, the anisotropy in magnetoresistance with respect to angle has been described by the Hikami-Larkin-Nagaoka theory. This anisotropy can be used in anisotropic magnetic sensor applications.

A three-level model for alkali metal vapor lasers. Part II: broadband optical pumping

The effects of pump laser spectral bandwidth on the performance of longitudinally pumped diode-pumped alkali lasers is explored by extending the analytic, three-level model using longitudinally averaged number densities. By assuming a statistical distribution between the upper two levels, the limiting solution for the quasi-two level system is achieved. A second limiting solution is identified for strongly bleached conditions where the atom recycle rate, limited by spin–orbit relaxation, fully specifies the output power. Performance in the intermediate regime depends significantly on the pump bandwidth relative to the atomic absorption line width and requires numerical simulation. The ratio of populations for the two excited, 2P3/2,1/2 states completes an analytic solution and depends primarily on pump laser bandwidth, threshold, and alkali concentration. Absorption well into the wings on the atomic profile can be utilized by increasing alkali concentration, but imposes increased pump intensity threshold.

Distinguishing Spin Relaxation Mechanisms in Organic Semiconductors

A theory is introduced for spin relaxation and spin diffusion of hopping carriers in a disordered system. For disorder described by a distribution of waiting times between hops (e.g., from multiple traps, site-energy disorder, and/or positional disorder) the dominant spin relaxation mechanisms in organic semiconductors (hyperfine, hopping-induced spin-orbit, and intrasite spin relaxation) each produce different characteristic spin relaxation and spin diffusion dependences on temperature. The resulting unique experimental signatures predicted by the theory for each mechanism in organic semiconductors provide a prescription for determining the dominant spin relaxation mechanism.

Observation of crossover from weak localization to antilocalization in the temperature dependence of the resistance of a two-dimensional system with spin-orbit interaction

A nonmonotonic temperature dependence of the resistance with a maximum in the temperature range of 2–4 K whose position depends on the hole density has been observed in hole channels of silicon field-effect transistors. The spin-orbit hole relaxation time and the temperature dependences of the phase relaxation time of the electron wave have been obtained from the measurements of the alternating sign anomalous magnetoresistance. The nonmonotonic temperature dependence of the resistance can be described by the formulas of weak-localization theory with these parameters. The maximum appears owing to a temperature-induced change in the relation between the measured times. As a result, the localization behavior of the conductivity at high temperatures is changed to the antilocalization behavior at low temperatures. The inclusion of quantum corrections to the conductivity caused by the electron-electron interaction improves quantitative agreement between the experiment and calculation. Thus, it has been demonstrated that, in contrast to the widely accepted concept, there is a region of the parameters where the electron-electron interaction does not change the antilocalization (metallic) type of the temperature dependence of the resistance.

Spin-orbit quenching of Cl(2P1/2) by H2

We report fully-quantum, time-independent, scattering calculations for the spin-orbit quenching of Cl((2)P(1∕2)) by H(2) molecules at low and moderate temperature. Our calculations take into account chemical reaction channels. Cross sections are calculated for total energies up to 5000 cm(-1) which are used to determine, by thermal averaging, state-to-state rate coefficients at temperatures ranging from 50 to 500 K. Spin-orbit relaxation of chlorine is dominated by collisions with H(2) in the rotationally excited states j = 2 and j = 3. In the former case the near-resonant energy transfer is the primary relaxation mechanism. The inclusion of the reactive channel could lead differences compared to pure inelastic calculations. Good agreement is obtained with experimental relaxation measurements at room temperature.

Quantitative modeling of spin relaxation in quantum dots

We use numerically exact diagonalization to calculate the spin-orbit and phonon-induced triplet-singlet relaxation rate in a two-electron quantum dot exposed to a tilted magnetic field. Our scheme includes a three-dimensional description of the quantum dot, the Rashba and the linear and cubic Dresselhaus spin-orbit coupling, the ellipticity of the quantum dot, and the full angular description of the magnetic field. We are able to find reasonable agreement with the experimental results of Meunier et al. [Phys. Rev. Lett. 98, 126601 (2007)] in terms of the singlet-triplet energy splitting and the spin relaxation rate, respectively. We analyze in detail the effects of the spin-orbit factors, magnetic-field angles, and the dimensionality, and discuss the origins of the remaining deviations from the experimental data.

I−·(CH3I)2 photoexcitation: The influence of dipole bound states on detachment and fragmentation

We present the results of a photoelectron imaging study of the I(-)·(CH(3)I)(2) cluster anion over excitation wavelengths 355-260 nm. The resulting spectra and photoelectron angular distributions (PADs) suggest extensive electron-molecule interaction following photoexcitation. Fragmentation channels are observed subsequent to excitation between 355 and 330 nm. The origin of these features, which begin 200 meV and peak 70 meV below the X band direct detachment threshold, is described in terms of a predissociative dipole bound state. The nature of the fragments detected and the energetics of the channel opening argue strongly in favor of an asymmetric, head to tail cluster anion geometry posited by Dessent et al. [Acc. Chem. Res. 31, 527 (1998)]. Above the direct detachment threshold, PADs display evidence of phenomena akin to electron-molecule scattering. The fragment anions disappear above the X band threshold but reappear some distance below the second (A) direct detachment band. At these energies there is also rapid variation of the X band PAD, an observation attributed to autodetachment via spin-orbit relaxation of the iodine core of the cluster.