SnO2 Lattice Research Articles

Optimal Dispersion of Antimony-Doped Tin Oxide (ATO NPs) in Different NMP Solvent Ratios for Maximizing Photovoltaic Efficiency of Carbon-Based Perovskite Solar Cells

This study addresses interface defects in tin oxide (SnO₂) electron transport layers (ETLs) for perovskite solar cells (PSCs) by doping SnO₂ with antimony (12.9% Sb/Sn). Using a diffusion-precipitation method with varying ratios of N-Methyl-2-Pyrrolidone (NMP) and distilled water (DW) as solvents, antimony-doped tin oxide (ATO) nanoparticle layers were formed and deposited on FTO substrates. Structural and compositional analyses (XPS, EDX, and XRD) confirmed successful Sb incorporation, maintaining the SnO₂ lattice with reduced particle size. Higher NMP ratios improved conductivity to 12 S/cm, enhanced charge transport, and raised the bandgap from 3.67 eV to 3.84 eV. Optimal 100% NMP conditions yielded ATO-based ETLs achieving a power conversion efficiency (PCE) of 23.645%, with a fill factor (FF) of 43.681%, open-circuit voltage (VOC) of 1.202 V, and short-circuit current density (JSC) of 23.87 mA/cm2, underscoring the potential of ATO layers for high-performance PSCs.

A mechanism study of type i corrosion on the surface of ancient tin rich bronzes

This study compares the surface patina of ancient tin rich bronze with pure hydrothermally synthesized SnO2 nanoparticles using various analytical techniques, including metallographic microscopy, scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, X-ray diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and high-angle annular dark-field scanning transmission electron microscopy. The primary crystalline component of the patina consists of approximately 5 nm SnO2 nanoparticles, which closely resemble pure SnO2, indicating their comparability. Cu was also detected in the patina; however, it did not form crystalline structures. The X-ray diffraction results showed a shift in the patina’s peak, suggesting the infiltration of Cu into the SnO2 lattice, which compromises its crystallinity. In comparison to synthetic SnO2, the X-ray photoelectron spectroscopy spectra of the patina revealed novel peaks corresponding to both Cu and O, indicating the presence of Cu−O−Sn bonding—a characteristic feature of type-I patina. This suggests that the primary structure of type-I patina consists of crystalline SnO2 nanoparticles, with a limited amount of Cu integrated into its lattice configuration. The concentration of Cu within the SnO2 crystal units is restricted, leading primarily to the formation of amorphous Cu2O in conjunction with Sn. The presence of Sn enhances the structural stability of Cu2O, facilitating its incorporation while inhibiting the crystallization of Cu2O. However, when the Sn concentration is insufficient, an inadequate Cu–O−Sn amorphous phase may form, allowing for the potential crystallization of Cu2O.

Impact of evolution of structural defects on the ferromagnetic and electrical properties of laser deposited Indium-doped SnO2 thin films

Impact of non-magnetic cationic-substitution on the evolution of structural defects and correlated ferromagnetic and electrical properties are investigated in series of pulsed laser deposited Sn1-xInxO2 (0.0 ≤ x ≤ 0.12) thin films. Beyond the nominal doping concentration of 2 at.% (i.e. x > 0.02), Indium (In)-doped SnO2 film switches to exhibit from n-type to p-type electrical conductivity and simultaneously the magnetization (MS) as well as the Curie temperature (TC) of the films increase significantly. Estimated values of ‘MS’ and ‘TC’ are found to achieve as large as 15.21 emu/cm3 and 540 K respectively when In-doping concentration approaches towards x = 0.08 and afterwards tend to decrease abruptly. Various spectroscopic techniques including Positron Annihilation Lifetime Spectroscopy (PALS) have detected the existence of Sn vacancy (VSn) defects within Sn1-xInxO2 films arise as the effect of In-substitution at Sn site (InSn) under O-rich atmosphere. The estimated positron lifetimes and the increase of line-shape S-parameter confirm the rise of VSn defects which serve as the major source of magnetic moments in non-magnetic host SnO2. Besides, InSn defects introduce excess holes within SnO2 lattice and thereby the magnetic spin-spin RKKY interaction between near-by VSn defects are mediated ferromagetically through the localized holes. For x > 0.08, stabilization of various donor-type defects such as Sn interstitial (Sni), indium interstitial (Ini) actually compensates the acceptors that leads to reduce the effective hole density consequently diminishing the strength of ferromagnetism within SnO2. Hence, tuning of such ferromagnetic and semiconducting properties through non-magnetic cationic substitution in transparent conducting oxides can be very promising in the field of next-generation spintronics.

Oxygen-defect rich SnO2-based homogenous composites for fast response and recovery hydrogen sensor

As a kind of green energy, hydrogen (H2) has been widely concerned and applied by people. One of the biggest challenges for sensing applications is the quick detection of hydrogen leaks or their release in various conditions, particularly in large electric vehicle batteries. This study successfully constructed a quick response and recovery hydrogen sensor based on the In2O3-SnO2 heterojunction. The response and recovery time of the In2O3-SnO2 hydrogen sensor is 1.1/1.9 s to 50 ppm H2. This is reduced to 11.0 %/9.5 % compared to the SnO2 hydrogen sensor. This sensor's remarkable gas detecting properties are mainly attributed to the In2O3-SnO2 heterojunction creation, crystal structure modification, and increased specific surface area (92.9 m2/g). Homogenous In2O3-SnO2 nanocomposites contain more oxygen defects, which is the primary factor enhancing the sensor's ability to detect gases. Firstly, indium ions are incorporated in the lattice of SnO2 results in lattice distortion and enhances the presence of oxygen deficiency in the composites, which plays a pivotal role in achieving rapid response and recovery of the sensor. Secondly, In2O3-SnO2 heterostructures promote rapid adsorption of oxygen molecules and target gases by facilitating effective electron mobility on their surface. The quicker response and recovery times of hydrogen sensors based on In2O3-SnO2 heterojunctions are observed. This innovative approach to creating fast-responding gas sensors highlights the promise of heterojunction-based hydrogen sensors for real-time H2 monitoring and opens up new research directions.

Effect of Mg/Ag co–doping on crystal structure, optical, and transport properties of SnO2 compound

The attempt to search for novel materials for optoelectronics material has become a highly debated and intensively investigated field of study. Within the scope of this investigation, Sn0.94Ag0.06-xMgxO2 (0 ≤ x ≤ 0.06) polycrystalline samples were produced using the traditional solid–state reaction method, and their crystalline structure, micro–structure, Raman spectroscopy, optical, and transport characteristics were investigated. Confirmation of a single rutile phase with a tetragonal crystal structure through XRD (X–ray diffraction) analysis is revealed. The morphology study by scanning electron microscopy indicated the formation of nanometric grains. All elements are evenly distributed throughout the structure, as seen by the elemental color mapping. The successful incorporation of Mg/Ag to the SnO2 lattice is evidenced by two prominent peaks in the Raman spectra of these compounds, with wavenumbers of 634 and 775 cm−1, which correspond to the A1g and B2g Raman modes, respectively. The UV–Vis spectrophotometer facilitated the acquisition of absorbance and transmittance data, which revealed that the optical band gap exhibited an expansion when the quantity of Mg/Ag co–doping increased in the SnO2 material. The transmittance value was also shown to increase from 80 % to 90 % with increased Mg co–doping concentration. The Maxwell–Weigner model has been employed to fully understand how the dielectric constant (εr), loss tangent (tan δ), complex impedance, and ac conductivity of Mg/Ag co–doped SnO2 compounds behave depending on frequency. The current–voltage (I–V) characteristics of the sample were measured using a Keithley 6517b electrometer in two–probe mode with a Tin metal pressure contact. The properties of I–V exhibited an Ohmic behavior. A study on the room temperature resistivity reveled that the materials are highly resistive in the nature.

Investigation of structural, morphological and optoelectronic properties of (Ni, Co)-doped and (Ni/Co) co-doped SnO2 (110) sprayed thin films

The manuscript details the application of spray pyrolysis for the deposition of an economically viable transparent conductive oxide film comprised of (Ni/Co) co-doped SnO2 on a glass substrate. The primary objective of this research was to systematically examine the impact of Ni/Co co-doping on diverse properties of the SnO2 thin film. These properties encompassed the film's structural composition, surface morphology, optical response, and electrical behaviors. A comparison was made with pure SnO2 film, as well as SnO2 films doped with 3 %Ni and 1 %Co. The results indicate that all the samples exhibited a tetragonal structureThe introduction of Co and Ni atoms had no impact on the favored alignment of the (110) plane or the crystal structure of the SnO2 film. The crystallite size of the pure SnO2 film, as well as the (Co, Ni)-doped and (Ni/Co) co-doped SnO2 films, varied within the range of 11 to 20 nm. Scanning electron microscopy (SEM) images were employed to assess how doping and co-doping influenced the surface characteristics of the films. The presence of pores and/or roughness on the surface resulted in a hydrophilic character and a decrease in the contact angle for the doped films (Ni, Co). However, the co-doped film exhibited a hydrophobic characteristic due to the surface enhancement provided by SnO2:3 %Ni:1 %Co. The research also focused on the optical characteristics of the films, showing a positive impact with the proper incorporation of Ni and Co atoms into the SnO2 lattice. It was notably observed that the addition of Ni and Co atoms improves the optical properties of the undoped transparent SnO2 film in the visible spectrum, with a high transmittance of 87 % achieved for the Ni-doped film. Furthermore, the hydrophobic nature achieved by adding a concentration of 3 %Ni to the SnO2:1 %Co film enhances its optical transmission in the range of 300 nm to 750 nm. The SnO2 film shows an improvement in the electrical resistivity upon doping and co-doping with low resistivity value of 2.22 × 10−2 Ω.cm for the film (3 %Ni/1 %Co)-SnO2. Drawing from these insightful results, the study proposes the potential utilization of (Ni/Co) co-doped SnO2 films as transparent electrodes in optoelectronic applications, especially in the manufacturing of thin film solar cells.

Interfacial carbon quantum dot thin film impacts on morphological and chemical structures of fluorine-doped tin oxide films

Morphology and chemical bonding states, including surface roughness, film density, F-doping, and oxygen vacancy (VO) concentration directly affect the electrical and optical properties of fluorine-doped tin oxide (FTO) films. In this study, morphology and chemical bonding states of FTO films are engineered simultaneously by introducing a carbon quantum dot (CQD) thin film as an interface layer during ultrasonic spray pyrolysis deposition. The abundant oxygen-containing surface functional groups and large surface free energy of the CQD thin film promoted (200) oriented crystal growth and accelerated nucleation of FTO, resulting in smooth and dense FTO film morphology. The abundant carboxyl surface functional groups on the CQDs generate active F− species that are effectively doped into SnO2. Formic acid, formed by dissociation of the carboxyl group, can serve as a strong reducing agent for extracting oxygen atoms from the SnO2 lattice, thereby increasing the VO concentration. The accelerated F-doping and VO concentration result in the generation of additional free electrons. The effects of the optimized CQD on the morphological and chemical structures of FTO films are demonstrated by their superior electrical (sheet resistance of ∼5.7 Ω/□) and optical properties (visible transmittance of ∼85.9 %) compared with bare FTO. Moreover, CQD/FTO used as transparent conducting electrodes in electrochromic (EC) application exhibited improved EC performances, including fast switching speeds (5.3 s and 2.3 s for bleaching and coloration, respectively) and high coloration efficiency (81.1 cm2/C) compared to that of bare FTO.

Mg doping effect on the properties of SnO2 thin films synthesized by dip-coating method

Undoped and Mg doped SnO2 thin films were deposited on glass substrates using dip-coating method for the first time. X-ray diffraction analysis of the films revealed a tetragonal rutile phase. A decrease in crystallite size is observed as the Mg doping increases. The transmittance spectrum exhibits a decrease in transmittance from 87% to 62% as the Mg content is increased. The optical band gap narrows from 3.97 eV to 3.93 eV with the increasing of Mg content. MEB showed an increase of grain sizes with increase in Mg concentration. The RMS roughness increases with Mg doping content. FTIR showd O–Sn–O, Sn–OH, Mg–O, and OH–Mg–OH vibration modes. PL spectra indicated that the incorporation of more Mg2+ into the lattice of SnO2 creates additional oxygen vacancies, leading to an increase in the PL emission intensity in the films. A transition from n-type to p-type conduction was observed at 9 wt% Mg doping.

Interstitial Doping of SnO2 Film with Li for Indium-Free Transparent Conductor

SnO2 films exhibit significant potential as cost-effective and high electron mobility substitutes for In2O3 films. In this study, Li is incorporated into the interstitial site of the SnO2 lattice resulting in an exceptionally low resistivity of 2.028 × 10−3 Ω⋅cm along with a high carrier concentration of 1.398 × 1020 cm−3 and carrier mobility of 22.02 cm2/V⋅s. Intriguingly, Li i readily forms in amorphous structures but faces challenges in crystalline formations. Furthermore, it has been experimentally confirmed that Li i acts as a shallow donor in SnO2 with an ionization energy ΔE D1 of −0.4 eV, indicating spontaneous occurrence of Li i ionization.

Effect of Te doping in SnO2 in Sn and O sites: A DFT study

In this work, we have studied the electronic properties of SnO2 by employing the density functional theory. The aim of the work is to study the comparative effect of Te doping in SnO2 in Sn and O sites. The CASTEP module is used for the simulation. [Formula: see text] lattice of SnO2 was used for the study of the band structure and density of state. The electronic properties change significantly on doping the sample with Te. Also, when Te is doped in different quantities and at different sites in SnO2, the bandgap is overlapped in 0.75% Te doping at O site and the maximum is found to be 0.587 eV in 0.75% Te doping at Sn site. For pure SnO2, the bandgap is 1.064. Hence SnO2 when doped with Te influences the conductivity.

Effects of Rare Earth Doping on Structural and Electrocatalytic Properties of Nanostructured TiO2 Nanotubes/SnO2-Sb Electrode for Electrochemical Treatment of Industrial Wastewater

The solvothermal synthesis technique was employed to successfully fabricate a series of rare earth doped SnO2-Sb electrodes on the TNTs array substrate, serving as anode material for electrocatalytic degradation of phenol. The electrode doped with rare earth elements demonstrated superior electrocatalytic activity and stability in comparison to the undoped electrode. The influence of adding rare earth elements (i.e., Gd and Nd) into the precursor solution on the structural and property of TNTs/SnO2-Sb electrodes was studied in detail. The results obtained from SEM and XRD indicated that, compared to TNTs/SnO2-Sb-Nd, TNTs/SnO2-Sb-Gd exhibited a finer grain size due to the smaller ionic radius of the Gd element. This facilitated its incorporation into the SnO2 lattice interior and inhibited grain growth, resulting in a significant decrease in particle size for exposing more active sites. The influence mechanism of rare earth doping on electrochemical activity was investigated through XPS, EPR, LSV, EIS and Hydroxyl radicals (•OH) generation tests. The results demonstrated that the enhanced electrocatalytic activity can be attributed to an increased generation of oxygen vacancies on the electrode surface, which act as active sites for enhancing the adsorption of oxygen species and promoting •OH generation.

Effect of Sb Doping on Structure and Humidity Sensing Properties of SnO2 Synthesized by Hydrothermal Method

AbstractThe tetragonal rutile Sb doped Sn O2 (0, 0.5, 1 at.%) is successfully synthesized by hydrothermal method. The XRD analysis shows that the average crystallite size of SnO2 decreases from 29.59 to 20.53 nm with the increase of the doping concentration. SEM images depict the spherical grain morphology of the SnO2 sample. With the increase of the doping ratio, the optical bandgap value of the SnO2 samples increases from 3.6 to 3.86 eV and then decreases to 3.47 eV, showing a trend of first increasing and then decreasing. XPS results indicate that oxygen vacancy defects and substitutional defects(SbSn)are formed into the SnO2 lattice, which changes the electronic effect of Sn element to tune the oxygen vacancy concentration. The humidity‐sensitive testing data shows that 1 at.% Sb‐doped SnO2 humidity sensor presented excellent sensitivity and linearity at a working frequency of 100 Hz as compared to the pure SnO2 sample.

Optoelectronic properties and optical transitions in low concentrated aluminum-doped tin oxide thin films

The structural, chemical, surface morphology, and optoelectronic characteristics of Al-doped SnO2 (ATO) films are investigated and a comprehensive analysis of the obtained results is presented. All films are shown to have a polycrystalline tetragonal rutile structure by X-ray diffraction (XRD) measurements, and the single-phase nature of the structure is proved by detailed X-ray photoelectron spectroscopy (XPS) investigations. Two mechanisms of Al incorporation into the SnO2 lattice were evident by XRD and XPS measurements. Comprehensive XPS, XRD, and Hall effect investigations showed a clear relation between the charge carrier concentration, crystallite size, and the concentration of oxygen vacancy defects. Through a comprehensive analysis of the photoluminescence (PL) measurements, we determined the positions of various defect states within the bandgap. Using a thorough analysis of the optical absorption measurements, we have successfully demonstrated the presence of four direct optical transitions with energies ranging from 3.84 to 5.10 eV, and by considering the Moss–Burstein effect and the Urbach tailing phenomenon, it was shown that the first transition energy (E1) corresponds to the direct optical transition across the Γ3+−Γ1+ forbidden energy gap. The other three transitions are ascribed to electronic transitions from the valence band states Γ5− and Γ5+ to different defect states within the bandgap.

Tungsten and fluorine co-doping induced morphology change and textured growth of spray-pyrolyzed SnO2 thin films viable for photocatalytic application

Physicochemical aspects of numerous metal oxide based thin films are crucial for various optoelectronic applications. Cationic (W) and anionic (F) co-doping strategy into SnO2 thin film has been adapted in order to tune the optoelectronic parameters. X-ray diffraction pattern reveals successful doping of ‘W’ and ‘F’ into the SnO2 lattice and textured growth along (111) plane direction at the expense of suppression of the (211) plane. X-ray photoelectron spectroscopy confirmed the charge states of Sn4+, W6+, O2− and F1− elements present in the films. Scanning electron microscopy shows that tetragonal morphology of pure and F-doped SnO2 changes to a network-like feature upon ‘W’ co-doping and the elemental composition is also ensured. The contact angle measurement gives the surface wettability nature, which indicates all the films are hydrophilic. The 10 wt.% F-doped SnO2 shows a maximum transmittance of 89.36 % at 550 nm with a direct band gap of 3.82 eV. Electrical transport parameters are measured using linear four-probe and Hall effect techniques. Photocatalytic activity of methylene blue dye degradation showing a maximum efficiency for pure and solely F-doped SnO2 thin films are explained based on the obtained optoelectronic parameters.

Synthesis of Mesoporous Lanthanum-Doped SnO2 Spheres for Sensitive and Selective Detection of the Glutaraldehyde Disinfectant.

Glutaraldehyde disinfectant has been widely applied in aquaculture, farming, and medical treatment. Excessive concentrations of glutaraldehyde in the environment can lead to serious health hazards. Therefore, it is extremely important to develop high-performance glutaraldehyde sensors with low cost, high sensitivity, rapid response, fabulous selectivity, and low limit of detection. Herein, mesoporous lanthanum (La) doped SnO2 spheres with high specific surface area (52-59 m2 g-1), uniform mesopores (with a pore size concentrated at 5.7 nm), and highly crystalline frameworks are designed to fabricate highly sensitive gas sensors toward gaseous glutaraldehyde. The mesoporous lanthanum-doped SnO2 spheres exhibit excellent glutaraldehyde-sensing performance, including high response (13.5@10 ppm), rapid response time (28 s), and extremely low detection limit of 0.16 ppm. The excellent sensing performance is ascribed to the high specific surface area, high contents of chemisorbed oxygen species, and lanthanum doping. DFT calculations suggest that lanthanum doping in the SnO2 lattice can effectively improve the adsorption energy toward glutaraldehyde compared to pure SnO2 materials. Moreover, the fabricated gas sensors can effectively detect commercial glutaraldehyde disinfectants, indicating a potential application in aquaculture, farming, and medical treatment.

Antibacterial activity of SnO2 in visible light enhanced by erbium–cobalt co-doping

In this work, a series of SnO2 samples with systematically varied doping amounts of Er and Co were prepared via a precipitation–hydrothermal method. The results show that after Er doping, the 4I15/2 ground state of Er3+ jumps to the 4H11/2 higher-energy level, and the Er-doped SnO2 samples can efficiently convert low-energy light into high-energy light. Thus, Er doping is beneficial for improving the visible and near-infrared light response of SnO2 and thus enhances its photocatalytic performance. Furthermore, doping SnO2 with Co leads to a distortion of the SnO2 lattice. A proportion of the SnO2 lattice is replaced by Co atoms, which can effectively lower the bandgap of SnO2, widen its optical response range, and enhance its sunlight absorption efficiency. The photocatalytic antibacterial activities of pure SnO2, as well as SnO2 co-doped with Er and Co in visible light, were investigated under visible light using Escherichia coli. SnO2 shows the best antibacterial activity and electron–hole separation efficiency when co-doped with 1.5 mol. % Er and 1.5 mol. % Co (Er1.5Co1.5-SnO2). Gradient experiments reveal that mainly the reactive oxygen species affect the antibacterial activity of pure SnO2. The improved antibacterial performance of Er1.5Co1.5-SnO2 is attributed to the increased generation of·O2− and·OH. In addition, scavenger experiments reveal that·O2− is the key contributor to the enhanced antibacterial activity of SnO2.

Investigations of structural, optical and transport property of Sb-doped SnO2 compounds for optoelectronics application

Recently extensive research into the potential uses of oxide materials doped with non-magnetic elements in optoelectronic and spintronic devices has been carried out. In this work, the structural, optical and transport property of the Sn1−xSbxO2 (x = 0–0.10) compounds were studied by using X-ray diffraction (XRD), Raman spectroscopy, UV–vis photo-spectrometer and Hall-effect measurements. For preparation of the samples, the solid-state reaction technique was utilized. Based on the measurement and analysis of the XRD data, it was revealed that these prepared materials were crystallized in a single tetragonal rutile phase of SnO2. Moreover, the XRD data indicated that the solubility limit of Sb was only upto 8 % and thereafter secondary phase of Sb2O3 starts to appear. Using the equation developed by Debye and Scherrer, it was discovered that these samples had an average crystallite size that fell somewhere in the range of 32–36 nm. The microstructural investigation using a scanning electron microscope show a nano meter range sphere-shaped morphology. The rutile phase of SnO2 has been reconfirmed by Raman spectroscopy, and it further shows that there is no lattice disorder upon inclusion of Sb into the SnO2 lattice. An analysis of the optical property by means of a UV–vis Photo-spectrometer indicates that the value of optical band gap reduces as the amount of Sb doping in the material increases. Whereas, the optical transmittance value was found to decrease. The Hall effect measurement indicate the p-type behaviour of these samples and the carrier concentration of holes rises with Sb doping concentration.

The Role of SnO2 Processing on Ionic Distribution in Double-Cation-Double Halide Perovskites.

Moving toward a future of efficient, accessible, and less carbon-reliant energy devices has been at the forefront of energy research innovations for the past 30 years. Metal-halide perovskite (MHP) thin films have gained significant attention due to their flexibility of device applications and tunable capabilities for improving power conversion efficiency. Serving as a gateway to optimize device performance, consideration must be given to chemical synthesis processing techniques. Therefore, how does common substrate processing techniques influence the behavior of MHP phenomena such as ion migration and strain? Here, we demonstrate how a hybrid approach of chemical bath deposition (CBD) and nanoparticle SnO2 substrate processing significantly improves the performance of (FAPbI3)0.97(MAPbBr3)0.03 by reducing micro-strain in the SnO2 lattice, allowing distribution of K+ from K-Cl treatment of substrates to passivate defects formed at the interface and produce higher current in light and dark environments. X-ray diffraction reveals differences in lattice strain behavior with respect to SnO2 substrate processing methods. Through use of conductive atomic force microscopy (c-AFM), conductivity is measured spatially with MHP morphology, showing higher generation of current in both light and dark conditions for films with hybrid processing. Additionally, time-of-flight secondary ionization mass spectrometry (ToF-SIMS) observed the distribution of K+ at the perovskite/SnO2 interface, indicating K+ passivation of defects to improve the power conversion efficiency (PCE) and device stability. We show how understanding the role of ion distribution at the SnO2 and perovskite interface can help reduce the creating of defects and promote a more efficient MHP device.

Influence of single-ionized oxygen vacancies on the generation of ferromagnetism in SnO2 and SnO2:Cr nanowires

In this work, we report the influence of single-ionized oxygen vacancies (V^{prime}_{{text{O}}}) as a spin ½ system in the ferromagnetic response of undoped and Cr-doped SnO2 nanowires. For this study, undoped and Cr-doped SnO2 nanowires were synthesized by a thermal evaporation method. Raman, Auger, and X-ray photoelectron spectroscopies confirmed the incorporation of Cr3+ ions in the SnO2 lattice. Electron paramagnetic resonance measurements demonstrated the presence of single-ionized oxygen vacancies (V^{prime}_{{text{O}}}) in undoped and Cr-doped nanowires. Complementarily, cathodoluminescence measurements confirmed the presence of VO defects in the samples. Magnetic measurements revealed FM behavior from the undoped SnO2 and Cr-doped SnO2 nanowires, showing magnetization saturation values (MS) of ± 1 × 10–3 and ± 1.6 × 10–3 emu/g, respectively, and magnetic coercivity values (HC) of 180 and 200 Oe. We assign the FM response of nanowires to the presence of single ionized V^{prime}_{{text{O}}} acting as a spin ½ system and to the alignment of magnetic moments of Cr3+ ions, finding that V^{prime}_{{text{O}}} defects dominate in the FM generation.

Anionic Fluorine and Cationic Niobium Codoped Tin Oxide Thin Films as Transparent Conducting Electrodes for Optoelectronic Applications

Exploration of alternatives for supplementing indium tin oxide electrode is currently trending due to scarcity of indium, leading to a steep increase in the cost of related optoelectronic components. Codoping of niobium (Nb) and fluorine (F) into SnO2 lattice as cationic and anionic dopants, respectively, is explored by spray deposition technique. A fixed 10 wt% F and varying Nb concentration from 0 to 5 wt% is incorporated into the SnO2 lattice. X‐ray diffraction reveals substitution of Nb and F into the SnO2 lattice without altering the structure. Optical transmittance is found to increase with Nb content up to 4% of Nb (77.59%), and it decreases thereafter. Scanning electron microscope and optical profiler imply a relatively smooth surface with sharp‐tipped particles which vary with Nb concentration. Sheet resistance decreases up to 3 wt% of Nb doping and increases thereafter. Contact angle measurement indicates that upon doping with Nb, the films turn hydrophilic. Among the deposited films, 4 wt% of Nb‐doped film shows the highest figure of merit of 5.01 × 10−3 Ω−1. The surface work function of the 4 wt% Nb‐doped SnO2 film is 4,687.85 meV. The optimal films are tested as electrodes in dye‐sensitized solar cells and are discussed in detail.