Sn Nanorods Research Articles

Electroluminescence from n-In_2O_3:Sn randomly assembled nanorods/p-SiC heterojunction

Room-temperature electroluminescence (EL) has been realized from Sn-doped In(2)O(3) (In(2)O(3):Sn) nanorods. Heterojunction light-emitting diode (LED) was formed by depositing a layer of randomly packed n-In(2)O(3):Sn nanorods onto a p-type 4H-SiC substrate. It is found that the emission intensity of the heterojunction LED under forward bias can be maximized by doping the In(2)O(3) nanorods with 3 mol. % of Sn. Furthermore, two emission peaks of the EL spectra are observed at approximately 395 and approximately 440 nm. These ultraviolet and visible peaks are attributed to the radiative recombination at Sn induced and intrinsic defect states of the In(2)O(3):Sn nanorods.

Large critical magnetic field and tunneling anomaly behavior of superconducting carbon-coated Sn nanorods and nanoparticles

The arc-discharge process is usually used to synthesize some kinds of metal nanocrystals or nanoparticles all with high melting temperature. Here, the carbon-coated Sn (with a low melting temperature) nanostructured materials with different shapes, such as carbon-coated Sn nanorods with diameter of about 100 and 50 nm and, correspondingly, the length of 500 and 200 nm, and the carbon-coated Sn nanoparticles, are prepared by a modified arc-discharge process. The carbon shells are found to surround these Sn nanostructures. The carbon shell becomes thick with decreasing the size of the Sn nanostructures. The magnetic and electrical transports are affected by the shape of nanocrystals. The critical magnetic field of the carbon-coated Sn nanorods with diameter of 50 nm and length of 200 nm is almost 25 times higher than that of bulk Sn. The superconductivity of the carbon-coated Sn nanoparticles with particle size of 40 nm is destroyed. The zero bias tunneling anomalies was observed in the carbon-coated Sn nanoparticles.

Synthesis, characterization and microwave absorption of carbon-coated Sn nanorods

Carbon-coated Sn nanorods have been synthesized by an arc-discharge method. The Sn/C–paraffin composite shows excellent electromagnetic (EM) absorption properties. Reflection losses exceeding −20 dB can be realized in any interval within the 2–18 GHz range by choosing an appropriate thickness of the absorbent layer between 1.5 and 9 mm. The EM-wave absorption properties of nanocomposite materials are illustrated in detail by means of an absorption-tube-map. The carbon-coated Sn nanorods are attractive candidates for EM-wave absorption, which significantly enriches the family of EM-wave nano-absorbents.

A Family of Aligned C-Curved Nanoarches

One-dimensional (1-D) nanomaterials are basic building blocks for the construction of nanoscale devices. However, the fabrication and alignment of 1-D nanomaterials with specific geometry and composition on a given substrate is a significant challenge. Herein we show a successful example of fabricating a family of aligned 1-D C-curved nanoarches of different compositions on an extended Si surface by a simple and scalable method. The nanoarches are made up of either single-crystalline Sn nanorods encapsulated in carbon nanotubes (CNTs), SnO(2) nanotubes, or CNTs. The aligned 1-D C-curved nanoarches of single-crystalline Sn nanorods in CNTs are prepared first by a facile in situ reduction of SnO(2) nanoparticles under standard chemical vapor deposition conditions. Nanoarches of CNTs and SnO(2) nanotubes were then derived from the Sn@CNT nanoarches by acid etching and by calcination in air, respectively.

Single‐Crystalline, Submicrometer‐Sized ZnSe Tubes

Wurtzite-type ZnSe tubes with submicrometer diameters (see Figure, scale bar 200 nm) have been grown. The tubes are structurally uniform and defect-free single crystals, and are partially or completely filled with Sn nanorods. While many of the as-grown tubes display needle-like structures, some have uniform diameters and wall thicknesses throughout the entire length.