Small-signal Measurements Research Articles

On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls

In this study, AlGaN/GaN Fin-HEMTs with different nanochannel geometric parameters were fabricated and comprehensively characterized. In the arcuate Fin-HEMTs, where the sidewalls arcuate from the source to the drain side, enhancements in the drain current density and transconductance were observed. By extracting and analyzing parameters obtained from small-signal measurements and conducting an analysis of gate capacitance, it was demonstrated that the enhancement can be attributed to the modulation of gate capacitance. This enhances the control capability of the gate over channel carriers, resulting in increased transconductance of the device. Due to the enhanced transconductance, the fT and fmax of the arcuate Fin-HEMTs are both enhanced. Notably, the arcuate Fin-HEMTs achieved a power-added efficiency of 71.4% at a frequency of 3.6 GHz and a drain voltage of 20 V. Meanwhile, the linearity of the arcuate Fin-HEMTs is improved compared with the conventional Fin-HEMTs.

A Review of Impedance Spectroscopy Technique: Applications, Modelling, and Case Study of Relative Humidity Sensors Development

Impedance Spectroscopy (IS) is a general term for the technique referring to small-signal measurements of the linear electrical response of a domain of interest. This method is based on the analysis of the system’s electrical response to yield helpful information about its domain-dependent physicochemical properties (generally, the analysis is carried out in the frequency domain). Nowadays, there are many areas of application where IS can be used to evaluate or enhance the development of emerging products and processes. As a contribution to this field of research, this paper presents relevant theoretical–practical aspects of the interpretation and analysis of the electrical behavior of materials based on IS and IS modelling. The work starts by historically introducing IS and then goes through different domains of application of the technique, such as Materials Science and correlated areas. Afterwards, an introduction to IS usage for constructing equivalent electrical circuits is presented, aiming at modelling the materials’ electrical behavior, followed by examples from the literature that use the two possible circuit development approaches, the series and the parallel association of circuit elements. Lastly, the authors present a case study of their most recent efforts of a circuit model development of relative humidity (RH) sensors based on heterogeneous mixed metal oxide (MMO) nanostructures, used to understand and identify existing contributions to the overall electrical response of the sensors to moisture; in their case, the electrical response of the MMO sensors was modelled with a high level of superposition between the experimental and fitted data, using a parallel combination of circuit elements, which is an unconventional one.

Self-referencing for quasi shot-noise-limited widefield transient microscopy

Many applications of ultrafast and nonlinear optical microscopy require the measurement of small differential signals over large fields-of-view. Widefield configurations drastically reduce the acquisition time; however, they suffer from the low frame rates of two-dimensional detectors, which limit the modulation frequency, making the measurement sensitive to excess laser noise. Here we introduce a self-referenced detection configuration for widefield differential imaging. Employing regions of the field of view with no differential signal as references, we cancel probe fluctuations and increase the signal-to-noise ratio by an order of magnitude reaching noise levels only a few percent above the shot noise limit. We anticipate broad applicability of our method to transient absorption, stimulated Raman scattering and photothermal-infrared microscopies.

A Compact GaN Power Amplifier Module for New Generation Cellular Basestations

This paper presents a compact class-AB Power Amplifier Module (PAM) designed for new generation massive Multiple Input Multiple Output (MiMo) cellular base stations. The module is designed at the center frequency of 3.5GHz targeting Long Term Evolution (LTE) and 5G New Radio (NR) bands. The module is a hybrid design that incorporates a Gallium Nitride (GaN) High Mobility-Electron Transistor (HEMT) die, discrete components-based input, and output matching networks. The entire design is realized on an 8.5 x 5.2 mm, 2-layer Rogers4003C substrate. The module is assembled on a PCB as an open-top for post-characterization tuning. The small signal and large signal measurements are in quite good agreement. The measurement results show that the amplifier is unconditionally stable, the input return loss is 12.2 dB, the output return loss is 7.7 dB, and the small signal gain is 13.4 dB. The saturated output power is 33.3 dBm with a Power Added Efficiency of 20.1%. The small signal gain drops to 11.2 dB at around 22 dBm of input power due to GaN technology’s intrinsic soft compression characteristics.

Compact silicon photonic Mach-Zehnder modulators for high-energy physics

The characterization of compact non-traveling-wave Mach-Zehnder modulators for optical readout in high-energy physics experiments is reported to provide power-efficient alternatives to conventional traveling-wave devices and a more resilient operation compared to ring modulators. Electro-optical small-signal and large-signal measurements showcase the performances of custom NTW-MZMs designed and fabricated in iSiPP50G IMEC's technology in the framework of INFN's FALAPHEL project. Bit-error-rate results demonstrate their potential suitability for optical links up to 25 Gb/s when equipped with either conventional deep-etched or radiation-hardened shallow-etched free-carrier-based phase shifters.

An E band MMIC power amplifier design using 100 nm T‐Gate GaN HEMT on SiC

SummaryThe small signal modeling, design, fabrication, and measurement about monolithic millimeter‐wave integrated circuit (MMIC) using gallium nitride (GaN) power amplifier (PA) on silicon carbide (SiC) working at the E band are proposed in this paper. The two stage PA used customized 4 × 75 μm transistor with 100 nm T gate technology. The extraction and optimization of small signal model are based on single GaN high electron mobility transistor (HEMT)'s measurement. Balanced structure and new method are used by low impedance matching, which can simplify circuits prominently and benefit for die size reduction. Radial stub and LC stub are made the whole circuit in absolute stable status; the in‐series DC block metal–insulator–metal capacitor from the matching circuit ensure the process is within small tolerances. From the 61–66 GHz bandwidth, a peak 10.7 dB small signal gain is obtained from the designed MMIC GaN PA, and also, the maximum output power can reach 29.7 to 30.4 dBm from 61 to 66 GHz, with an associated the peak drain efficiency of 18.8%. The final die size without dicing slot is 3.0 × 1.74 mm2.

Dependence of Device Performances on Fin Ratios of AlGaN/GaN Nanoscale Fin-HEMTs

In this article, we report the fabrication and characterization of AlGaN/GaN fin-type high electron mobility transistors (Fin-HEMTs) grown on high-resistance silicon substrates. The Fin-HEMTs have a gate length of 125 nm by using electron-beam lithography with various fin ratios, which are defined as the total effective periodic gate widths over the gate width, along the whole gate width. The Fin-HEMTs are designed with three fin ratios of 0.5, 0.3, and 0.25. The on-resistance decreases with reducing the fin ratio and reaches 1.1 Ω mm at the fin ratio of 0.25. In addition, the Fin-HEMT with a fin ratio of 0.25 still exhibits a 14% higher drain current density than the planar device. With tetramethylammonium hydroxide (TMAH) etching, the current collapse caused by surface traps on the fin’s sidewalls is significantly reduced from 28.9% to 2.4% by the pulse I-V measurement. The Fin-HEMTs also can improve the gate control capability through the analyses of small-signal and large-signal measurements.

Study of silicon-oxide RRAM devices based on complex impedance spectroscopy

This work presents a study of Metal-Oxide-Semiconductor RRAM structures with highly doped Si substrates that exhibit the resistive switching effect. We use DC measurements to show the resistance modulation effect and small-signal measurements to investigate the resistive switching layer behavior. We show that by utilizing the results of impedance spectroscopy measurements, we can build an equivalent electrical circuit that can be used to investigate the properties of RRAM devices. Our model fits very well with the measurement data for investigated frequency and voltage values.

Characteristics Comparison of Nanochannel GaN-on-Si and GaN-on-SiC HEMTs

A comparative investigation on device characteristics of GaN-on-Si and GaN-on-SiC high electron mobility transistors (HEMTs) fabricated with the gate lengths of 175, 150, and 125 nm is conducted. The device performance of the HEMTs is evaluated through DC current-voltage, small-signal, and large-signal measurements. The HEMTs with 125 nm gate length exhibit better characteristics than the HEMTs with other gate lengths. Besides, obvious increases of maximum transconductance (Gm), drain current density (JD), on/off current ratio, cutoff frequency (fT), maximum oscillation frequency (fmax), power gain, and power-added efficiency (PAE) are observed for GaN-on-SiC HEMTs as compared with those for the GaN-on-Si HEMTs. The GaN-on-SiC HEMT with a gate length of 125 nm delivers a maximum Gm of 299 mS mm−1, a JD larger than 1.1 A mm−1, an on/off current ratio of 3.8 × 104, a fT of 59.4 GHz, a fmax of 62.3 GHz, a power gain of 17.6 dB, and PAE of 63.8%, which make it promising for RF power amplifier application.

Dynamic Charge Acceptance Compared to Electrochemical Impedance Spectroscopy Parameters: Dependencies on Additives, State of Charge, and Prior Usage

The goal of this work was to predict the dynamic charge acceptance (DCA) for cells using different additives on the negative electrode from the evaluation of small-signal measurements by electrochemical impedance spectroscopy (EIS). Thereby, various operating points were evaluated, such as state of charge (SoC) and prior usage (charge or discharge). The 2V test cells under investigation utilized plates of enhanced flooded 3P2N battery cells (EFB). They contained three positive and two negative electrodes. The latter varied in their additive composition. In total, eight different negative electrodes were investigated, five including specially synthesized amorphous carbon as an additive, two with unknown additive mixes, and one including a commercially available carbon black. The best parameters for predicting the DCA were found within the first semicircle of the negative half-cell spectra measured during a superimposed charging current.

Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX

This Letter reports a high performance β-Ga2O3 thin channel MOSFET with T gate and degenerately doped (n++) source/drain contacts regrown by metal organic chemical vapor deposition. Highly scaled T-gate with a gate length of 160–200 nm was fabricated to achieve enhanced RF performance and passivated with 200 nm silicon nitride. Peak drain current (ID,MAX) of 285 mA/mm and peak transconductance (gm) of 52 mS/mm were measured at 10 V drain bias with 23.5 Ω mm on resistance (RON). Metal/n++ contact resistance of 0.078 Ω mm was extracted from transfer length measurements. RON is possibly dominated by interface resistance between channel and highly doped n++ regrown layer. A gate-to-drain breakdown voltage of 192 V is measured for LGD = 355 nm resulting in average breakdown field (EAVG) of 5.4 MV/cm. This EAVG is the highest reported among all sub-micron gate length lateral FETs. Current gain cut off frequency (fT) of 11 GHz and record power gain cut off frequency (fMAX) of approximately 48 GHz were extracted from small signal measurements. fT is limited by DC-RF dispersion due to interface traps which needs further investigation. The fT·VBR product is 2.112 THz V for 192 V breakdown voltage. Device surpasses the switching figure of merit of Silicon and competitive with mature wide bandgap devices.

Impedance switching for neural recording with ferroelectric microelectrodes

We demonstrate ferroelectric and bipolar impedance switching behavior in 18-nm-thick epitaxial BaTiO3 (BTO) films in an electrolyte–ferroelectric–semiconductor (EFS) configuration. The system is explored for its potential as a ferroelectric microelectrode in bioelectronics. Cyclic voltammetry measurements in EFS configuration, with a phosphate-buffered saline solution acting as the liquid electrolyte top contact, indicate characteristic ferroelectric switching peaks in the bipolar current–voltage loop. Moreover, small-signal electrochemical impedance spectroscopy measurements (applied root mean square voltage VRMS = 10 mV) on pre-poled EFS devices indicate bipolar impedance switching behavior. Also, a maximum ratio of the two different impedance magnitudes of ∼1.5 was observed at frequency f = 100 Hz. The observed impedance switching corresponds to a resistive switching effect, which could be explained by the modulation of the space charge region at the BTO/electrolyte interface via fixed ferroelectric polarization charges. Our approach represents a key step toward neural recordings with ferroelectric microelectrodes.

N-polar GaN/AlGaN/AlN high electron mobility transistors on single-crystal bulk AlN substrates

Recent observation of high density polarization-induced two-dimensional electron gases in ultra-thin N-polar GaN layers grown on single-crystal AlN has enabled the development of N-polar high electron mobility transistors (HEMTs) on AlN. Such devices will take advantage of thermal and power handling capabilities of AlN, while simultaneously benefitting from the merits of N-polar structures, such as a strong back barrier. We report the experimental demonstration of N-polar GaN/AlGaN/AlN HEMTs on single-crystal AlN substrates, showing an on-current of 2.6 A/mm with a peak transconductance of 0.31 S/mm. Small-signal RF measurements revealed speeds exceeding ft/fmax = 68/100 GHz. These results pave the way for developing RF electronics with excellent thermal management based on N-polar single-crystal AlN.

Characterization of the Dynamic RON of 600 V GaN Switches under Operating Conditions

High-voltage GaN switches can offer tremendous advantages over silicon counterparts for the development of high-efficiency switching-mode power converters at high commutation frequency. Nonetheless, GaN devices are prone to charge-trapping effects that can be particularly relevant in the early-stage development of new technologies. Charge-trapping mechanisms are responsible for the degradation of the dynamic ON-resistance (RON) with respect to its static value: this degradation is typically dependent on the blocking voltage, the commutation frequency and temperature, and is responsible for the reduction of power converter efficiency. The characterization of this phenomenon is very valuable for the development of a new process to compare different technological solutions or for the final assessment of performance. This characterization cannot be made with traditional static or small signal measurements since RON degradation is triggered by application-like dynamic device excitations. In this paper, we propose a technique for the characterization of the dynamic RON of high-voltage GaN switches under real operating conditions: this technique is based on the design of a half bridge switching leg in which the DUT is operated under conditions that resemble its operation in a power converter. With this setup, the characterization of a 600 V GaN switch dynamic RON is performed as a function of variable blocking voltages and commutation frequency. Additionally, this technique allows the separation of thermal and trapping effects, enabling the characterization of the dynamic RON at different temperatures.

Self-calibration phase demodulation scheme for stabilization based on an auxiliary reference fiber-optic interferometer and ellipse fitting algorithm.

To solve the problem of light source jitter and asymmetric 3 × 3 coupler, a phase demodulation method with the combination of an auxiliary reference interferometer and elliptic fitting algorithm is proposed, which is verified by simulation and experiment. By introducing additional phase modulation in the auxiliary reference interferometer, the parameters of the sensing arm can be calibrated in real time, which ensures the effective operation of elliptic fitting algorithm in small signal measurement. Consequently, the experiments show that the self-calibration scheme enables a higher signal to noise and distortion ratio with an average increase of 1.65 dB and 10.47 dB compared with the traditional Arctan and cross multiplication differential, respectively. Meanwhile, the self-calibration scheme can also effectively suppress the harmonic distortion, with a total harmonic distortion of -33.64 dB in the case of small signal.

Probing charge traps at the 2D semiconductor/dielectric interface.

The family of 2-dimensional (2D) semiconductors is a subject of intensive scientific research due to their potential in next-generation electronics. While offering many unique properties like atomic thickness and chemically inert surfaces, the integration of 2D semiconductors with conventional dielectric materials is challenging. The charge traps at the semiconductor/dielectric interface are among many issues to be addressed before these materials can be of industrial relevance. Conventional electrical characterization methods remain inadequate to quantify the traps at the 2D semiconductor/dielectric interface since the estimations of the density of interface traps, Dit, by different techniques may yield more than an order-of-magnitude discrepancy, even when extracted from the same device. Therefore, the challenge to quantify Dit at the 2D semiconductor/dielectric interface is about finding an accurate and reliable measurement method. In this review, we discuss characterization techniques which have been used to study the 2D semiconductor/dielectric interface. Specifically, we discuss the methods based on small-signal AC measurements, subthreshold slope measurements and low-frequency noise measurements. While these approaches were developed for silicon-based technology, 2D semiconductor devices possess a set of unique challenges requiring a careful re-evaluation when using these characterization techniques. We examine the conventional methods based on their efficacy and accuracy in differentiating various types of trap states and provide guidance to find an appropriate method for charge trap analysis and estimation of Dit at 2D semiconductor/dielectric interfaces.

Measurement System for Piezoelectric Resonance Impedance Spectroscopy Under Combined AC and High-Voltage DC Loading.

Piezoelectric resonance impedance spectroscopy is a standardized measurement technique for determining the electromechanical, elastic, and dielectric parameters of piezoceramics. However, commercial measurement setups are designed for small-signal measurements and encounter difficulties when constant driving voltages/currents are required at resonances, higher fields, or combined AC and DC loading. The latter is particularly important to evaluate the DC bias-hardening effect of piezoelectrics. Here, we propose a novel measurement system for piezoelectric resonance impedance spectroscopy under combined AC and high-voltage DC loading that complies with established standards. The system is based on two separate output amplifier stages and includes voltage/current probes, a laser vibrometer, custom protection components, and control software with optimization algorithm. In its current form, the measurement setup allows the application of AC frequencies up to 500 kHz and DC signals up to ±10 kV on samples with impedance between 10-1 and 106 Ω . The operation of the proposed setup was benchmarked against commercial impedance analyzers in the small-signal range and reference equivalent circuits. Test measurements under combined AC and DC loading were performed on a soft Pb(Zr,Ti)O3 piezoceramic. The results revealed that a DC bias voltage applied along the polarization direction ferroelectrically hardens the material, while the material softens and eventually depolarizes when the DC bias voltage is applied in the opposite direction. The results confirm the suitability of the designed measurement system and open new exciting possibilities for tuning the piezoelectric properties by DC bias fields.

Modeling, analysis, and demonstration of a carrier-injection electro-absorption modulator at 2 µm on Ge-on-Si platform.

In this paper, a carrier-injection electro-absorption modulator (EAM) at 2 µm is demonstrated on Ge-on-Si platform. The EAM shows a compact size and high modulation efficiency due to the strong free-carrier electroabsorption (FCEA) effect in Ge. A modulation depth of 40 dB can be obtained under the injection current of only 420 mA. Small-signal frequency response measurement is performed and a small-signal equivalent circuit model is proposed. Based on reflection coefficients and equivalent circuit, the frequency response of carrier-injection EAM is discussed in detail. The 500 Mbps open eye diagram verifies the data-processing capacity of our EAM at 2 µm wavelength for its application in biological, chemical molecular detection, and infrared imaging systems.

Tunable continuous-wave laser operation of Tm3+ ion doped tellurite glass near 2 μm

We provide an experimental investigation of the absorption saturation and 1.9-μm lasing characteristics of a bulk Tm3+:TZLN glass with the host composition of 74TeO2–12ZnO–4La2O3–10Na2O. By using a z-scan saturation measurement, the absorption cross section at 794 nm was determined to be 5×10−21cm2, in reasonable agreement with the value of 6×10−21cm2 obtained from small-signal transmission measurement. In lasing experiments, double pumping was employed at 794 nm and the bulk Tm3+:TZLN glass laser operated at the free running wavelength of 1926 nm. As high as 15.4 mW of continuous-wave output power was obtained with a 2.15% transmitting output coupler at the absorbed pump power of 284 mW. The slope efficiency with respect to the absorbed pump power was 7.1%. By using the threshold and power efficiency data, the stimulated emission cross section was further determined to be 6.8×10−21cm2at 1926 nm. Finally, continuous tuning of the laser output was demonstrated between 1845 and 1973 nm by using a quartz birefringent plate.

Performance Analyses of Photonic-Crystal Surface-Emitting Laser: Toward High-Speed Optical Communication

This study conducts comprehensive performance analyses of a commercial photonic-crystal surface-emitting laser (PCSEL) via small-signal measurement and the bit-error-rate test. Meanwhile, the radio frequency characteristics of the PCSEL are unveiled for the first time. Compared to the vertical-cavity surface-emitting lasers, the PCSEL shows great potential for a broader optical bandwidth that is benefited from the high optical-confinement factor. A maximum bandwidth of around 2.32 GHz is experimentally observed when the PCSEL was biased at 340 mA. Moreover, a theoretical calculation was applied to shed light on the characteristics of the small-signal measurement, providing a deep insight into the corresponding intrinsic response model. The signal transmission capability of the PCSEL was investigated as well. The maximum bit rate and corresponding rise time transmitted at 500 Mbps are 1.2 Gbps and 186.16 ps, respectively. Thus, a high-speed PCSEL can be realised with a shrunk form factor, serving as a promising candidate for the next-generation light sources in high-speed optical communication.