Single-photon Avalanche Diode Imager Research Articles

CMOS SPAD Imager Array for Wide Radiation Temperature Sensing and Thermal Imaging

We have demonstrated a wide radiation temperature measurement by using a single-photon avalanche diode (SPAD) image array that is analogous to a silicon photomultiplier with a time-gating technique and an adjustable summed output. The detection temperature window ranging from 280 °C to 1050 °C can be achieved with a noise equivalent temperature difference (NETD) value of below 1 °C. The thermal image with a high detection rate up to 1680 Hz is obtained at the same detection temperature as a commercial CMOS thermal camera. We further demonstrate a thermal image with a spatial resolution of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$80~\mu \text{m}$ </tex-math></inline-formula> .

A 500 × 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

In this article, we report on SwissSPAD3 (SS3), a 500 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times$ </tex-math></inline-formula> 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gates, guaranteed by the circuit architecture to be nonoverlapping and covering the totality of the sensor’s exposure period. The gates can be adjusted with a temporal resolution of 17.9 ps, and the minimum measured gate width is 0.99 ns; to our knowledge, the shortest reported to date among large-format SPAD imagers. In the dual-channel mode, the burst frame rate is 49.8 and 97.7 kframes/s in the single-channel mode. A 2690-MB/s PCI express (PCIe) interface has been added to the data acquisition framework, enabling continuous operation at approximately 44 and 88 kframes/s. Due to optimizations of the gate-signal tree, we achieved a significant reduction to gate skew and gate width variation, which is negligible with respect to the SPAD temporal jitter. These improvements, along with sub-10-cps dark count rate (DCR) per pixel and 50% maximum photon detection probability (PDP), result in a sensor particularly well suited for fast acquisition fluorescence lifetime imaging microscopy (FLIM) experiments, for which we demonstrate reduced dispersion versus a single-gated sensor.

A 13-Bit, 12-ps Resolution Vernier Time-to-Digital Converter Based on Dual Delay-Rings for SPAD Image Sensor.

A three-dimensional (3D) image sensor based on Single-Photon Avalanche Diode (SPAD) requires a time-to-digital converter (TDC) with a wide dynamic range and fine resolution for precise depth calculation. In this paper, we propose a novel high-performance TDC for a SPAD image sensor. In our design, we first present a pulse-width self-restricted (PWSR) delay element that is capable of providing a steady delay to improve the time precision. Meanwhile, we employ the proposed PWSR delay element to construct a pair of 16-stages vernier delay-rings to effectively enlarge the dynamic range. Moreover, we propose a compact and fast arbiter using a fully symmetric topology to enhance the robustness of the TDC. To validate the performance of the proposed TDC, a prototype 13-bit TDC has been fabricated in the standard 0.18-µm complementary metal–oxide–semiconductor (CMOS) process. The core area is about 200 µm × 180 µm and the total power consumption is nearly 1.6 mW. The proposed TDC achieves a dynamic range of 92.1 ns and a time precision of 11.25 ps. The measured worst integral nonlinearity (INL) and differential nonlinearity (DNL) are respectively 0.65 least-significant-bit (LSB) and 0.38 LSB, and both of them are less than 1 LSB. The experimental results indicate that the proposed TDC is suitable for SPAD-based 3D imaging applications.

Wide-field time-gated SPAD imager for phasor-based FLIM applications

We describe the performance of a new wide area time-gated single-photon avalanche diode (SPAD) array for phasor-FLIM, exploring the effect of gate length, gate number and signal intensity on the measured lifetime accuracy and precision. We conclude that the detector functions essentially as an ideal shot noise limited sensor and is capable of video rate FLIM measurement. The phasor approach used in this work appears ideally suited to handle the large amount of data generated by this type of very large sensor (512 × 512 pixels), even in the case of small number of gates and limited photon budget.

Phasor-based widefield FLIM using a gated 512×512 single-photon SPAD imager.

Single-photon avalanche diode (SPAD) imagers can perform fast time-resolved imaging in a compact form factor, by exploiting the processing capability and speed of integrated CMOS electronics. Developments in SPAD imagers have recently made them compatible with widefield microscopy, thanks to array formats approaching one megapixel and sensitivity and noise levels approaching those of established technologies. In this paper, phasor-based FLIM is demonstrated with a gated binary 512×512 SPAD imager, which can operate with a gate length as short as 5.75 ns, a minimum gate step of 17.9 ps, and up to 98 kfps readout rate (1-bit frames). Lifetimes of ATTO 550 and Rhodamine 6G (R6G) solutions were measured across a 472×256 sub-array using phasor analysis, acquiring data by shifting a 13.1 ns gate window across the 50 ns laser period. The measurement accuracy obtained when employing such a scheme based on long, overlapping gates was validated by comparison with TCSPC measurements and fitting analysis results based on a standard Levenberg-Marquardt algorithm (>90% accuracy for the lifetime of R6G and ATTO 550). This demonstrates the ability of the proposed method to measure short lifetimes without minimum gate length requirements. The FLIM frame rate of the overall system can be increased up to a few fps for phasor-based widefield FLIM (moving closer to real-time operation) by FPGA-based parallel computation with continuous acquisition at the full speed of 98 kfps.

A CMOS SPAD Imager with Collision Detection and 128 Dynamically Reallocating TDCs for Single-Photon Counting and 3D Time-of-Flight Imaging.

Per-pixel time-to-digital converter (TDC) architectures have been exploited by single-photon avalanche diode (SPAD) sensors to achieve high photon throughput, but at the expense of fill factor, pixel pitch and readout efficiency. In contrast, TDC sharing architecture usually features high fill factor at small pixel pitch and energy efficient event-driven readout. While the photon throughput is not necessarily lower than that of per-pixel TDC architectures, since the throughput is not only decided by the TDC number but also the readout bandwidth. In this paper, a SPAD sensor with 32 × 32 pixels fabricated with a 180 nm CMOS image sensor technology is presented, where dynamically reallocating TDCs were implemented to achieve the same photon throughput as that of per-pixel TDCs. Each 4 TDCs are shared by 32 pixels via a collision detection bus, which enables a fill factor of 28% with a pixel pitch of 28.5 μm. The TDCs were characterized, obtaining the peak-to-peak differential and integral non-linearity of −0.07/+0.08 LSB and −0.38/+0.75 LSB, respectively. The sensor was demonstrated in a scanning light-detection-and-ranging (LiDAR) system equipped with an ultra-low power laser, achieving depth imaging up to 10 m at 6 frames/s with a resolution of 64 × 64 with 50 lux background light.

A 512×512 SPAD Image Sensor with Integrated Gating for Widefield FLIM.

We report on SwissSPAD2, an image sensor with 512×512 photon-counting pixels, each comprising a single-photon avalanche diode (SPAD), a 1-bit memory, and a gating mechanism capable of turning the SPAD on and off, with a skew of 250ps and 344ps, respectively, for a minimum duration of 5.75ns. The sensor is designed to achieve a frame rate of up to 97,700 binary frames per second and sub-40ps gate shifts. By synchronizing it with a pulsed laser and using multiple successive overlapping gates, one can reconstruct a molecule's fluorescent response with picosecond temporal resolution. Thanks to the sensor's number of pixels (the largest to date) and the fully integrated gated operation, SwissSPAD2 enables widefield FLIM with an all-solid-state solution and at relatively high frame rates. This was demonstrated with preliminary results on organic dyes and semiconductor quantum dots using both decay fitting and phasor analysis. Furthermore, pixels with an exceptionally low dark count rate and high photon detection probability enable uniform and high quality imaging of biologically relevant fluorescent samples stained with multiple dyes. While future versions will feature the addition of microlenses and optimize firmware speed, our results open the way to low-cost alternatives to commercially available scientific time-resolved imagers.

CMOS-Based Gunshot Optical Detection Systems Performance Prediction Model

Detection of gunshots is a challenging mission which has many different engineering and sensing approaches. In this paper, we describe the system performance model for gun muzzle detection systems which are based either on complementary metal–oxide–semiconductor (CMOS) image sensors or on CMOS (as well as non-CMOS-based) single-photon avalanche diode image sensors. The principle of detection which was explored in this paper is based on the emission of photons from alkali atoms which are found in the projectiles’ gunpowder. This paper describes the model of electro-optical performance and its sensitivities to its various parameters. This paper also describes how the model may be used to derive requirements for the system’s optical design. This paper ends with a description of the model’s experimental validation, which reassures its correctness and applicability.

A $256\times256$ , 100-kfps, 61% Fill-Factor SPAD Image Sensor for Time-Resolved Microscopy Applications

A $256\times256$ single-photon avalanche diode image sensor operating at 100 kfps with fill factor of 61% and pixel pitch of $16~\mu \text{m}$ is reported. An all-nMOS 7T pixel allows gated operation down to 4 ns and ~600-ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio in rolling shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying charge-coupled devices while offering time-resolved imaging modes.

SPAD imagers for super resolution localization microscopy enable analysis of fast fluorophore blinking

sCMOS imagers are currently utilized (replacing EMCCD imagers) to increase the acquisition speed in super resolution localization microscopy. Single-photon avalanche diode (SPAD) imagers feature frame rates per bit depth comparable to or higher than sCMOS imagers, while generating microsecond 1-bit-frames without readout noise, thus paving the way to in-depth time-resolved image analysis. High timing resolution can also be exploited to explore fluorescent dye blinking and other photophysical properties, which can be used for dye optimization. We present the methodology for the blinking analysis of fluorescent dyes on experimental data. Furthermore, the recent use of microlenses has enabled a substantial increase of SPAD imager overall sensitivity (12-fold in our case), reaching satisfactory values for sensitivity-critical applications. This has allowed us to record the first super resolution localization microscopy results obtained with a SPAD imager, with a localization uncertainty of 20 nm and a resolution of 80 nm.

Flexible ultrathin-body single-photon avalanche diode sensors and CMOS integration.

We proposed the world's first flexible ultrathin-body single-photon avalanche diode (SPAD) as photon counting device providing a suitable solution to advanced implantable bio-compatible chronic medical monitoring, diagnostics and other applications. In this paper, we investigate the Geiger-mode performance of this flexible ultrathin-body SPAD comprehensively and we extend this work to the first flexible SPAD image sensor with in-pixel and off-pixel electronics integrated in CMOS. Experimental results show that dark count rate (DCR) by band-to-band tunneling can be reduced by optimizing multiplication doping. DCR by trap-assisted avalanche, which is believed to be originated from the trench etching process, could be further reduced, resulting in a DCR density of tens to hundreds of Hertz per micrometer square at cryogenic temperature. The influence of the trench etching process onto DCR is also proved by comparison with planar ultrathin-body SPAD structures without trench. Photon detection probability (PDP) can be achieved by wider depletion and drift regions and by carefully optimizing body thickness. PDP in frontside- (FSI) and backside-illumination (BSI) are comparable, thus making this technology suitable for both modes of illumination. Afterpulsing and crosstalk are negligible at 2µs dead time, while it has been proved, for the first time, that a CMOS SPAD pixel of this kind could work in a cryogenic environment. By appropriate choice of substrate, this technology is amenable to implantation for biocompatible photon-counting applications and wherever bended imaging sensors are essential.

Nonuniformity Analysis of a 65-kpixel CMOS SPAD Imager

While CMOS single-photon avalanche diode (SPAD) technology has steadily advanced, improving noise, timing resolution, and sensitivity, spatial resolution has been increasing as well. The increase in the number of pixels has made a comprehensive analysis of nonuniformity and its effects meaningful, allowing a more accurate comparison of SPAD imagers with other high-end scientific imagers, such as electron multiplying charge-coupled device and scientific CMOS. A comprehensive nonuniformity analysis was conducted on a 512 × 128 pixel gated SPAD imager, where dark noise, afterpulsing, crosstalk, signal response, and shot noise were measured. This analysis has led to a variety of postprocessing algorithms to improve the linearity of the response as for example required by ground state depletion microscopy-based superresolution microscopy and other techniques. We derived a new correction formula for the count rate applicable to 1-b SPAD imagers, and we measured a significant improvement of photon detection efficiency using microlenses. These techniques were used to validate the suitability of the imager in fluorescence microscopy examples.

100 000 Frames/s 64 × 32 Single-Photon Detector Array for 2-D Imaging and 3-D Ranging

We report on the design and characterization of a multipurpose 64 × 32 CMOS single-photon avalanche diode (SPAD) array. The chip is fabricated in a high-voltage 0.35-μm CMOS technology and consists of 2048 pixels, each combining a very low noise (100 cps at 5-V excess bias) 30-μm SPAD, a prompt avalanche sensing circuit, and digital processing electronics. The array not only delivers two-dimensional intensity information through photon counting in either free-running (down to 10-μs integration time) or time-gated mode, but can also perform smart light demodulation with in-pixel background suppression. The latter feature enables phase-resolved imaging for extracting either three-dimensional depth-resolved images or decay lifetime maps, by measuring the phase shift between a modulated excitation light and the reflected photons. Pixel-level memories enable fully parallel processing and global-shutter readout, preventing motion artifacts (e.g., skew, wobble, motion blur) and partial exposure effects. The array is able to acquire very fast optical events at high frame-rate (up to 100 000 fps) and at single-photon level. Low-noise SPADs ensure high dynamic range (up to 110 dB at 100 fps) with peak photon detection efficiency of almost 50% at 410 nm. The SPAD imager provides different operating modes, thus, enabling both time-domain applications, like fluorescence lifetime imaging (FLIM) and fluorescence correlation spectroscopy, as well as frequency-domain FLIM and lock-in 3-D ranging for automotive vision and lidar.

Integrated ultrasonic particle positioning and low excitation light fluorescence imaging

A compact hybrid system has been developed to position and detect fluorescent micro-particles by combining a Single Photon Avalanche Diode (SPAD) imager with an acoustic manipulator. The detector comprises a SPAD array, light-emitting diode (LED), lenses, and optical filters. The acoustic device is formed of multiple transducers surrounding an octagonal cavity. By stimulating pairs of transducers simultaneously, an acoustic landscape is created causing fluorescent micro-particles to agglomerate into lines. The fluorescent pattern is excited by a low power LED and detected by the SPAD imager. Our technique combines particle manipulation and visualization in a compact, low power, portable setup.

Video-rate fluorescence lifetime imaging camera with CMOS single-photon avalanche diode arrays and high-speed imaging algorithm

A high-speed and hardware-only algorithm using a center of mass method has been proposed for single-detector fluorescence lifetime sensing applications. This algorithm is now implemented on a field programmable gate array to provide fast lifetime estimates from a 32 × 32 low dark count 0.13 μm complementary metal-oxide-semiconductor single-photon avalanche diode (SPAD) plus time-to-digital converter array. A simple look-up table is included to enhance the lifetime resolvability range and photon economics, making it comparable to the commonly used least-square method and maximum-likelihood estimation based software. To demonstrate its performance, a widefield microscope was adapted to accommodate the SPAD array and image different test samples. Fluorescence lifetime imaging microscopy on fluorescent beads in Rhodamine 6G at a frame rate of 50 fps is also shown.