Single Mask Research Articles

Using a Single Mask to Create Multiple Patterns in Three-Component, Photoreactive Blends

Via simulations, we demonstrate a simple route for forming defect-free patterns in a photosensitive, immiscible ABC blend. The first pattern is established by irradiating the sample through a mask, which serves to pin the C regions and thereby promotes the self-assembly of A and B into ordered domains. When the mask is removed, the photoactivity of the AB blend leads to different periodic patterns. Thus, the use of one mask permits the creation of multiple ordered morphologies, which can be locked into the film by quenching the system at the appropriate time.

1105 Single-Mask傾斜UVリソグラフィにより作製した橋脚構造を利用したDNA伸展形状の制御(要旨講演,マイクロメカトロニクス)

Techniques of DNA manipulation are important for molecular biology. In this study, we propose a novel high-throughput DNA fiber assembling method to semi-control DNA positioning. We fabricated SU-8 microbridges using the Single Mask Inclined Photo-Lithography Expose (SIMPLE) process, and stretched the human chromosome on those microbridges by centrifugal force. Then DNA fibers can be stretched separately on microbridges, which are called a Genetic Extended-fiber Network (GEN). By performing Fluorescent In Situ Hybridization (FISH) analysis, the validity of GEN using the microbridges for DNA analysis was confirmed.

Investigation of Optimum Biasing and Undercut for Single Trench Alternating Phase Shift Mask in 193 nm Lithography

The use of an alternating phase shift mask is an effective method of improving resolution compared with binary and embedded attenuated phase shift mask technologies, but the intensity imbalance between the light propagating through the zero- and π-shifted spaces is the main obstacle to be overcome. Several technical methods are proposed to compensate for such an imbalance in the mask manufacturing process. The known general solutions for the intensity imbalance are applying a space bias and/or an undercut of the space region of the alternating phase shift mask. We evaluated the uniformity of the resist profile after the application of a space bias or an undercut of the mask space region in order to minimize the pattern position displacement and the critical dimension difference between the phase-shifted and unshifted regions for the 90 and 65 nm nodes. Additionally, we found that the imperfect side wall angle of an undercut or a space bias obviously affected the quality of pattern fidelity and hence investigated how the side wall angle affects pattern printability.

An Audit of the Single Use Portex Laryngeal Mask

We performed an audit of the insertion of the Single Use Portex Laryngeal Mask in 400 patients. Insertion was successful at first attempt in 335 out of 400 patients (83.8%). However in 15 patients (3.8%), the Portex laryngeal mask could not be placed despite repeated attempts. In 12 of these 15 patients (80%), a standard Laryngeal Mask Airway (LMA) was successfully placed. After the completion of the audit, 22 out of 29 anaesthetists (75.9%), who had inserted > or = 5 Portex laryngeal masks, considered it inferior to the standard LMA. It would appear to us that the Portex laryngeal mask might need some design modifications to be a real alternative to the standard LMA.

Deep Plasma Etching of Si in a CBrF3 Plasma through a Submicron Single Layer Electron-Beam Lithographic Mask

Deep Plasma Etching of Si in a CBrF3 Plasma through a Submicron Single Layer Electron-Beam Lithographic Mask

A Single Critical Mask Process for Manufacturing Very Large Area MOS-Controlled Power Transistors

A Single Critical Mask Process for Manufacturing Very Large Area MOS-Controlled Power Transistors

Operation of 3µm bubble serial loop devices designed on single level masking

An all-permalloy single mask level design for a serial loop circuit has been developed and successfully operated using 3 μm bubbles. The design of individual elements for a single level circuit such as generator, replicator and annihilator which were compatible with half-disk propagation patterns was successfully investigated and optimization of permalloy and SiO 2 spacer film thickness was achieved. The small capacity test chips fabricated provided 13-16 Oe window margins with circular drive field ranges of 40 to 50 Oe at 100 kHz. The critical stretching pulse phase margin for replication, which was the minimum phase margin for all functions was found to be 10 degrees. Details of design and characteristics are also discussed including operating margin dependence on frequency and temperature.

Color Correction with a Single Gray Mask in a Halftone Color Print

Quantitative color correction with a single gray mask requires that the two unwanted color densities of each ink must be equal. The unwanted densities can be equalized by appropriate choice of the separation filters. By use of DIN inks with daylight illumination, it is possible to fulfill the Luther condition as well as achieve equality of the unwanted color densities. The required mask must be exposed with blue, green, and red light, the proportions of these exposures being calculated from the unwanted densities of the three inks. To calculate the superimposition of three halftone images, additivity of color density behind each separation filter and purely additive color mixture of the halftone images were assumed. The result of the calculations shows that any mixture of inks produces the same unwanted color density behind each of the three separation filters. This means that any ink mixture can be masked by the same gray mask for all three separations. The unwanted color densities of some ink mixtures have been calculated and compared with a realizable mask density, with the result that, theoretically, any ink mixture can be masked with a single mask to within ±0.01 density units. This accuracy is better than that required by a practical process, but it depends on the following three conditions: equality of unwanted color densities for the pure inks, additivity of color densities in the superimposition of the pure inks, and purely additive color mixture. Thus the system is a very simple and theoretically correct first approximation to a practical masking process. The above assumptions are generally not fulfilled, but the deviations arising are of second order and do not seem to spoil markedly the color quality of a print.