The main objectives was to investigate and enhance the short circuit current density, J sc and also to improve the efficiency of silicon solar cel l by fabricating a layer of silicon dioxide (SiO 2) and silicon nitride (Si 3N4) coatings on silicon solar cell. This fabrication carried out on high temperature during annealing process from 800-1050°C and variable thickness of antireflection coating (ARC) layer from 50-90 nm thick. The photovoltaic propert ies of Si 3N4 layer have been compared with SiO 2 layer to determine which material is suitable in fa bricating single layer ARC. Solar cell simulation could be useful for time saving and cost consumptio n. Problem statement: The Silvaco software is not widely used in designing the 2D solar cell devi ces because there are lots of 1D, 2D and 3D- simulation beside Silvaco software such as MicroTec, SCAPS-1D. Approach: The silicon dioxide (SiO 2) and silicon nitride (Si 3N4) coating have been modeled and fabricated on silic on solar cell by using Silvaco software packaging. Results: For SiO 2 results, the FF value is approximately 0.758 and η maximum 9.43%. In annealing process, the temperature becomes higher resulted increasing of pn junction depth. However, not to V oc and Jsc values, both parameters were slowly decreased when temperature increased. Meanwhile, when the thickness of SiO 2 layer is increased, the parameters of pn junction depth, J sc , Voc , FF and η were decreased slowly. As for Si 3N4 result, the calculated FF approximately 0.758 and η maximum is 9.57%. During annealing process, the temperature increasing constantly follows the increasing of pn junction de pth and Jsc , meanwhile the Voc is decreased slowly. In variable Si 3N4 thickness simulation, the output parameters of pn junction depth, J sc , Voc , FF and η were decreased when the thickness increased 10 nm each simulation. Conclusion: The optimum temperature during annealing process for SiO 2 is 950 °C, while for Si 3N4 is 1050 °C. For the thickness analysis, the optimum ARC thickness for SiO 2 and Si 3N4 layer is 50 nm both.