Silicon Nitride Chip Research Articles

Solid-State Nanopore-Based Nanosystem for Registration of Enzymatic Activity of a Single Molecule of Cytochrome P450 BM3.

Experimental methods of single-molecule enzymology allow scientists to determine physicochemical properties of distinct single molecules of various enzymes and to perform direct monitoring of functioning of enzymes at different steps of their catalytic cycle. The approach based on the use of solid-state nanopores is a promising tool for studying the functioning of single-enzyme molecules. Herein, this approach is employed for monitoring the functioning of cytochrome P450 BM3, which represents a very convenient model of cytochrome P450-containing monooxygenase systems. A nanopore of ~5 nm in diameter has been formed in a 40 nm-thick silicon nitride chip by electron beam drilling (EBD), and a single molecule of the BM3 enzyme has been entrapped in the pore. The functioning of the enzyme molecule has been monitored by recording the time dependence of the ion current through the nanopore during the reaction of laurate hydroxylation. In our experiments, the enzyme molecule has been found to be active for 1500 s. The results of our research can be further used in the development of highly sensitive detectors for single-molecule studies in enzymology.

Registration of activity of a single molecule of horseradish peroxidase using a detector based on a solid-state nanopore.

This work demonstrates the use of a solid-state nanopore detector to monitor the activity of a single molecule of a model enzyme, horseradish peroxidase (HRP). This detector includes a measuring cell, which is divided into cis- and trans- chambers by a silicon nitride chip (SiN structure) with a nanopore of 5 nm in diameter. To entrap a single HRP molecule into the nanopore, an electrode had been placed into the cis-chamber; HRP solution was added into this chamber after application of a negative voltage. The reaction of the HRP substrate, 2,2-azino-bis(3-ethylbenzothiazoline-6-sulfonate) (ABTS), oxidation by the enzyme molecule was performed in the presence of hydrogen peroxide. During this reaction, the functioning of a single HRP molecule, entrapped in the nanopore, was monitored by recording the time dependence of the ion current flowing through the nanopore. The approach proposed in our work is applicable for further studies of functioning of various enzymes at the level of single molecules, and this is an important step in the development of single-molecule enzymology.

Raman Investigation on Silicon Nitride Chips after Soldering onto Copper Substrates.

The unique electrical properties of silicon nitride have increased the applications in microelectronics, especially in the manufacture of integrated circuits. Silicon nitride is mainly used as a passivation barrier against water and sodium ion diffusion and as an electrical insulator between polysilicon layers in capacitors. The interface with different materials, like semiconductors and metals, through soldering may induce residual strains in the final assembly. Therefore, the dentification and quantification of strain becomes strategically important in optimizing processes to enhance the performance, duration, and reliability of devices. This work analyzes the thermomechanical local strain of semiconductor materials used to realize optoelectronic components. The strain induced in the β-Si3N4 chips by the soldering process performed with AuSn pre-formed on copper substrates is investigated by Raman spectroscopy in a temperature range of -50 to 180 °C. The variation in the position of the E1g Raman peak allows the calculation of the local stress present in the active layer, from which the strain induced during the assembly process can be determined. The main reason for the strain is attributed to the differences in thermal expansion coefficients among the various materials involved, particularly between the chip, the interconnection material, and the substrate. Micro-Raman spectroscopy allows for the assessment of how different materials and assembly processes impact the strain, enabling more informed decisions to optimize the overall device structure.

Experimental post-selection loophole-free time-bin and energy-time nonlocality with integrated photonics

Time-bin (TB) and energy-time (ET) entanglements are crucial resources for long-distance quantum information processing. However, their standard implementations suffer from the so-called post-selection loophole that allows for classical simulation and thus prevents quantum advantage. The post-selection loophole has been addressed in proof-of-principle experiments. An open problem though is to close it in real-life applications based on integrated technologies. This is especially important since, so far, all integrated sources of TB and ET entanglements suffer from the post-selection loophole. Here, we report post-selection loophole-free certification of TB or ET entanglement in integrated technologies, by implementing in a silicon nitride chip the “hug” scheme [Phys. Rev. Lett. 102, 040401 (2009)PRLTAO0031-900710.1103/PhysRevLett.102.040401] and certifying genuine TB entanglement through the violation of a Bell inequality.

Anaerobic fixed-target serial crystallography using sandwiched silicon nitride membranes.

In recent years, the emergence of serial crystallography, initially pioneered at X-ray free-electron lasers (XFELs), has sparked a growing interest in collecting macromolecular crystallographic data at room temperature. Various fixed-target serial crystallography techniques have been developed, ranging from commercially available chips to in-house designs implemented at different synchrotron facilities. Nevertheless, there is currently no commercially available chip (known to the authors) specifically designed for the direct handling of oxygen-sensitive samples. This study presents a methodology employing silicon nitride chips arranged in a `sandwich' configuration, enabling reliable room-temperature data collection from oxygen-sensitive samples. The method involves the utilization of a custom-made 3D-printed assembling tool and a MX sample holder. To validate the effectiveness of the proposed method, deoxyhemoglobin and methemoglobin samples were investigated using the BioMAX X-ray macromolecular crystallography beamline, the Balder X-ray absorption spectroscopy beamline and UV-Vis absorption spectroscopy.

Two-axis MEMS positioner for waveguide alignment in silicon nitride photonic integrated circuits.

Alignment is critical for efficient integration of photonic integrated circuits (PICs), and microelectromechanical systems (MEMS) actuators have shown potential to tackle this issue. In this work, we report MEMS positioning actuators designed with the ultimate goal of aligning silicon nitride (SiN) waveguides either to different outputs within a SiN chip or to active chips, such as lasers and semiconductor optical amplifiers. For the proof-of-concept, suspended SiN waveguides implemented on a silicon-on-insulator wafer were displaced horizontally in the direction of light propagation to close an initial gap of 6.92 µm and couple the light to fixed output waveguides located on a static section of the chip. With the gap closed, the suspended waveguides showed ∼ 345 nm out-of-plane misalignment with respect to the fixed waveguides. The suspended waveguides can be displaced laterally by more than ±2 µm. When the waveguides are aligned and the gap closed, an average loss of -1.6 ± 0.06 dB was achieved, whereas when the gap is closed with a ± 2 µm lateral displacement, a maximum average loss of ∼ -19.00 ± 0.62 dB was obtained. The performance of this positioner does not only pave the way for active chip alignment, but it could also be considered for optical switching applications.

Slow‐Light‐Based Dispersion Compensation of High‐Speed Data on a Silicon Nitride Chip

Slow‐Light‐Based Dispersion Compensation of High‐Speed Data on a Silicon Nitride Chip

Slow‐Light‐Based Dispersion Compensation of High‐Speed Data on a Silicon Nitride Chip

Transmission of optical data over fiber is subjected to signal degradation from dispersion impairments that worsen with increasing fiber lengths and higher data rates. Consequently, dispersion impairments significantly limit the data rates and reaches of transceivers used for data center communications. Herein, the design and experimental demonstration of a low loss, CMOS‐compatible on‐chip silicon nitride transmission grating device for dispersion compensation of high‐speed data are reported. The design, which involves inscribing a perturbation in the effective index profile of the grating, generates a considerable increase in the dispersion magnitude and enables up to 25 km of single‐mode fiber to be compensated for. Importantly, high‐speed measurements after dispersion compensation of a 20 km single‐mode fiber, using non‐return‐to‐zero data at rates up to 28.05 Gb s−1 show nine orders of magnitude reduction in BERs from 5 10−1 to 1 10−10, accompanied by significant improvements in the eye diagram. The underlying operating mechanism involves slow‐light effects that are designed to generate large dispersion while maintaining low losses. A pathway toward dispersion impairment‐free high‐speed data transmission over fiber using a compact device is demonstrated, which can be seamlessly integrated within transceiver chips, bringing the applicability of slow‐light devices firmly into the domain of commercial viability.

Compensation of Kerr-induced impairments in silicon nitride third-harmonic generators.

Integrated third-harmonic generators enable on-chip wavelength conversion translating telecom signals to the visible spectrum. Despite the desirable functionality, the device performance is susceptible to phase distortions. Here, we present a design method of compensating the Kerr-induced distortions in third-harmonic generation. The design method yields a chirped Bragg grating theoretically improving the conversion efficiency by ∼30 dB. We envision the design method will pave the way for demonstrating efficient infrared-to-visible upconversion in silicon nitride chips.

Liquid-cell transmission electron microscopy for imaging of thermosensitive recombinant polymers

Various polymers used in controlled release applications exhibit solution-based thermal responses. Unfortunately, very few characterization and imaging techniques permit resolution of individual polymers during their thermally-triggered phase transitions. Here, we demonstrate the use of temperature-ramp liquid-cell transmission electron microscopy (LCTEM) for real-time evaluation of the solution and interfacial behavior of elastinlike polypeptides (ELPs) and their self-assembled nanostructures over a temperature range incorporating their intrinsic lower critical solution temperatures (LCSTs). Individual polymers and supramolecular assemblies were discriminated dependent upon solubility states. The recombinant polymers were shown to adsorb to the silicon-nitride chip window from the buffered saline solution and desorb in a temperature-dependent manner. Silk-elastinlike protein block copolymers (SELPs) (composed of repeat peptide motifs of silk and elastin) differed from ELPs in thermal behavior. While both polymers were shown to cluster, only SELPs formed robust amyloid-like fibers upon heating.

Silicon Nitride External Cavity Laser With Alignment Tolerant Multi-Mode RSOA-to-PIC Interface

We demonstrate an external cavity laser formed by combining a silicon nitride photonic integrated circuit with a reflective semiconductor optical amplifier. The laser uses an alignment tolerant edge coupler formed by a multi-mode waveguide splitter right at the edge of the silicon nitride chip that relaxes the required alignment to the III-V gain chip and equally splits the power among its two output waveguides. Both the ground and first order mode are excited in the coupler and reach the quadrature condition at the waveguide junction, ensuring equal power to be coupled to both. Two high-quality-factor ring resonators arranged in Vernier configuration close a Sagnac loop between the two waveguides. In addition to wideband frequency tuning, they result in a longer effective cavity length. The alignment tolerant coupler increases the alignment tolerance in the two directions parallel to the chip surface by a factor 3 relative to conventional edge couplers, making it ideal for gain chip integration via pick-and-place technology. Lasing is maintained in a misalignment range of ±6 μm in the direction along the edge of the chip. A Lorentzian laser linewidth of 39 kHz is achieved.

Toward integrated synchronously pumped optical parametric oscillators in silicon nitride.

We present a tunable, hybrid waveguide-fiber optical parametric oscillator (OPO) synchronously pumped by an ultra-fast fiber laser exploiting four-wave mixing (FWM) generated in silicon nitride waveguides. Parametric oscillation results in a 35 dB enhancement of the idler spectral power density in comparison to spontaneous FWM, with the ability of wide wavelength tuning over 86 nm in the O-band. Measurements of the oscillation threshold and the efficiency of the feedback loop reveal how an integration of the OPO on a single silicon nitride chip can be accomplished at standard repetition rates of pump lasers in the order of 100 MHz.

Photonic Integrated Reconfigurable Linear Processors as Neural Network Accelerators

Reconfigurable linear optical processors can be used to perform linear transformations and are instrumental in effectively computing matrix–vector multiplications required in each neural network layer. In this paper, we characterize and compare two thermally tuned photonic integrated processors realized in silicon-on-insulator and silicon nitride platforms suited for extracting feature maps in convolutional neural networks. The reduction in bit resolution when crossing the processor is mainly due to optical losses, in the range 2.3–3.3 for the silicon-on-insulator chip and in the range 1.3–2.4 for the silicon nitride chip. However, the lower extinction ratio of Mach–Zehnder elements in the latter platform limits their expressivity (i.e., the capacity to implement any transformation) to 75%, compared to 97% of the former. Finally, the silicon-on-insulator processor outperforms the silicon nitride one in terms of footprint and energy efficiency.

Direct Growth of Hexagonal Boron Nitride on Photonic Chips for High-Throughput Characterization

Adapting optical microscopy methods for nanoscale characterization of defects in two-dimensional (2D) materials is a vital step for photonic on-chip devices. To increase the analysis throughput, waveguide-based on-chip imaging platforms have been recently developed. Their inherent disadvantage, however, is the necessity to transfer the 2D material from the growth substrate to the imaging chip, which introduces nonuniform material coverage and contamination, potentially altering the characterization results. Here we present a unique approach to circumvent these shortfalls by directly growing a widely used 2D material (hexagonal boron nitride, hBN) on silicon nitride chips and optically characterizing the defects in the intact as-grown material. We compare the direct growth approach to the standard PMMA-assisted wet transfer method and confirm the clear advantages of the direct growth. While demonstrated with hBN in the current work, the method can be extended to other 2D materials.

Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip: publisher's note.

This publisher's note contains corrections to Opt. Lett.44, 5788 (2019)OPLEDP0146-959210.1364/OL.44.005788.

Silicon nitride programmable photonic processor with folded heaters.

General-purpose programmable photonic processors rely on the large-scale integration of beamsplitters and reconfigurable phase shifters, distributed within unit cells or photonic gates. With their future evolution threatened by several hardware constrains, including the integration density that can be achieved with current mesh topologies, in this work, we present a unit cell topology design to increase the integration density of waveguide mesh arrangements based on folded Mach-Zehnder Interferometers. We report the design details of a 40-unit cell waveguide mesh integrated in a 11mm x 5.5 mm silicon nitride chip achieving, to the best of our knowledge, the highest integration density reported to date for a general-purpose photonic processor. The chip is electrically interfaced to a PCB and we report examples of reconfigurable optical beamsplitters, basic tunable microwave photonic filters with high peak rejection (40 dB approx.), as well as the dynamic interconnection and routing of 5G digitally modulated signals within the photonic mesh.

Slow thermo-optomechanical pulsations in suspended one-dimensional photonic crystal nanocavities

We investigate the nonlinear optical response of suspended 1D photonic crystal nanocavities fabricated on a silicon nitride chip. Strong thermo-optical nonlinearities are demonstrated for input powers as low as $2\,\mu\text{W}$ and a self-sustained pulsing regime is shown to emerge with periodicity of several seconds. As the input power and laser wavelength are varied the temporal patterns change in period, duty cycle and shape. This dynamics is attributed to the multiple timescale competition between thermo-optical and thermo-optomechanical effects and closely resembles the relaxation oscillations states found in mathematical models of neuronal activity. We introduce a simplified model that reproduces all the experimental observations and allows us to explain them in terms of the properties of a 1D critical manifold which governs the slow evolution of the system.

III-N/Si₃N₄ Integrated Photonics Platform for Blue Wavelengths

In this paper, we report a low-loss photonic integrated circuits (PICs) platform at blue wavelengths of the visible spectral regime. Silicon nitride (SiN) is a popular passive waveguide material due to its fabrication flexibility, CMOS compatibility and spectral transparency in this wavelength regime. For active devices including lasers, gallium nitride (GaN) and its alloys are considered. Several basic building blocks for the development of a complete integrated platform, including blue diode lasers, in-plane- and out-of-plane light couplers, as well as on-and off-chip coupling between these active and passive components are theoretically investigated. The proposed in-plane and out-of-plane architectures operate through edge- and vertical grating couplers (VGCs), respectively. With edge-coupling, large mode-mismatch between the GaN laser diode and SiN waveguide is alleviated through nanotapers on both the active and passive sections and the calculated peak coupling efficiency is achieved to be 74% at a wavelength of 450 nm. We also separately designed efficient VGCs for coupling light from standard, commercial, off-the-shelf fibers to the SiN chip, and edge couplers for fiber-chip coupling, exhibiting coupling efficiencies of 51% and 83%, respectively. For robust on-chip light-coupling between active and passive circuit elements, with relaxed alignment tolerances, two approaches, i.e., flip-chip based hybrid integration and evanescent coupling based heterogeneous integration are studied. Calculated maximum coupling efficiencies of 40% (-4 dB) are achieved for both the hybrid and heterogeneous schemes. The theoretical work performed is an initial step towards demonstrating complex blue PICs which could offer a comprehensive range of photonic functionalities.

Erbium-doped TeO2-coated Si3N4 waveguide amplifiers with 5 dB net gain

We demonstrate 5 dB net gain in an erbium-doped tellurium-oxide-coated silicon nitride waveguide. The amplifier design leverages the high refractive index and high gain in erbium-doped tellurite glass as well as the ultra-low losses and mature, reliable, and low-cost fabrication methods of silicon nitride waveguide technology. We show that the waveguide platform demonstrates low background propagation losses of 0.25 dB/cm based on a ring resonator device with a Q factor of 1.3 × 10 6 at 1640 nm. We measure 5 dB peak net gain at 1558 nm and > 3 dB of net gain across the C band in a 6.7 cm long waveguide for 35 mW of launched 1470 nm pump power. Gain per unit length of 1.7 and 1.4 dB/cm is measured in a 2.2 cm long waveguide for 970 and 1470 nm pump wavelengths, respectively. Amplifier simulations predict that > 10 dB gain can be achieved across the C band simply by optimizing waveguide length and fiber-chip coupling. These results demonstrate a promising approach for the monolithic integration of compact erbium-doped waveguide amplifiers on silicon nitride chips and within silicon-based photonic integrated circuits.

Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride chip.

We report on thulium-doped waveguide amplifiers integrated on a low-loss silicon nitride platform. The amplifier structure consists of a thulium-doped tellurium oxide thin film coated on a silicon nitride strip waveguide on silicon. We determine a waveguide background loss of 0.7dB/cm at 1479nm based on the quality factor measured in microring resonators. Gain measurements were carried out in straight and 6.7-cm-long s-bend waveguides realized on a 2.2-cm-long chip. We measure internal net gain over the wavelength range 1860-2000nm under 1620nm pumping and up to 7.6dB total gain at 1870nm, corresponding to 1.1dB/cm. These results are promising for the realization of highly compact thulium-doped amplifiers in the emerging 2μm band for silicon-based photonic microsystems.