Silicon Heterojunction Solar Cells Research Articles

Practical Jsc Limits for SHJ Devices: Insights From Modelling

Modern industrial silicon heterojunction (SHJ) solar cells are increasingly limited by the short-circuit current density (Jsc) and there is a strong interest in understanding how much novel approaches such as window layers, novel transparent conductive oxides (TCOs) and anti-reflection coatings (ARCs) could improve the Jsc of SHJ solar cells. In this work, the practical Jsc limits of SHJ solar cells are determined using a carefully calibrated ray-tracing model, validated using empirical data from in-house solar cells as well as recently published high-efficiency front-and-back contacted (FAB) SHJ solar cells. The model is then further refined to obtain a detailed Jsc loss breakdown of the latest record efficiency FAB SHJ solar cells, for which there are no published Jsc loss breakdowns. Notable advances made in these advanced solar cells with regards to window layers, TCOs and ARCs at the cell level are analysed. Based on the magnitude of impact on the solar cell Jsc, the most critical factors for achieving high-Jsc SHJ solar cells are identified and ranked. Allowing for additional improvements and combining the best approaches identified, an estimate of the practical upper limit of Jsc for FAB SHJ solar cells is determined to be 41.81 mA/cm2. This work serves as a useful reference for the current state of play for Jsc improvements in SHJ solar cells, and highlights practical pathways and issues for improving commercial SHJ solar cells.

Evaluating the Practical Efficiency Limit of Silicon Heterojunction–Interdigitated Back Contact Solar Cells by Creating Digital Twins of Silicon Heterojunction Solar Cells with Amorphous Silicon and Nanocrystalline Silicon Hole Contact Layers

Improving power conversion efficiency (PCE) in photovoltaics has driven innovative approaches in solar cell design and technology. Silicon heterojunction (SHJ) solar cells exhibit advantages in PCE due to their effective passivating contact structures. SHJ–interdigitated back contact (SHJ–IBC) solar cells have the potential to surpass traditional SHJ cells, attributed to their advantage in short‐circuit current (JSC). Herein, Silvaco Atlas technology computer‐aided design is used to create digital twins of high‐efficiency SHJ solar cells with amorphous silicon and nanocrystalline silicon hole selective contact (HSC) layers. Using parameters from digital twins of SHJ solar cells, the practical efficiency limit of SHJ–IBC solar cells is assessed. The results show that SHJ–IBC cells can achieve potential efficiencies of 27.01% with amorphous HSC and 27.38% with nanocrystalline HSC. Further efficiency augmentation to 27.51% can be achieved by narrowing the gap from 80 to 20 μm. This study not only advances comprehension of SHJ–IBC solar cells but also provides insights into optimizing geometrical configurations for improved performance. The utilization of digital twins provides a valuable tool for predicting and evaluating the performance of SHJ–IBC solar cells, contributing substantively to the ongoing development of high‐efficiency photovoltaic technology.

Gallium‐Doped Zinc Oxide/Tungsten‐Doped Indium Oxide Stacks with Enhanced Lateral Transport Capability for Efficient and Low‐Cost Silicon Heterojunction Solar Cells

To decrease the series resistance in front gallium‐doped zinc oxide (GZO) silicon heterojunction (SHJ) solar cells caused by high‐resistivity GZO films, stack films including tungsten‐doped indium oxide (IWO) films which have better lateral transport properties are used as the front transparent conductive oxide (TCO) to improve charge transport. The crystal structure and electrical and optical characteristics of GZO/IWO stacks with different thickness ratios are investigated, and the current–voltage performance of SHJ solar cells with front GZO/IWO stacks and rear GZO film are analyzed. The effective transmittance of the stacks is greater than 98% in the visible region. When the thickness of GZO/IWO is 50 nm:50 nm, the resistivity reaches 8.59 × 10−4 Ω cm, which is a significantly 70% reduction compared with that of a single GZO film. Meanwhile, the power conversion efficiency is improved to 23.8%, effectively reducing the efficiency gap by approximately 0.12% compared to a single IWO transparent electrode. More effective lateral transport lowers the series resistance of SHJ solar cells. By employing stacks with lower indium content in the front TCO of SHJ solar cells, the cost can be reduced without significantly affecting the efficiency, which is important for the large‐scale development of SHJ solar cells.

Flexible silicon solar cells with high power-to-weight ratios.

Silicon solar cells are a mainstay of commercialized photovoltaics, and further improving the power conversion efficiency of large-area and flexible cells remains an important research objective1,2. Here we report a combined approach to improving the power conversion efficiency of silicon heterojunction solar cells, while at the same time rendering them flexible. We use low-damage continuous-plasma chemical vapour deposition to prevent epitaxy, self-restoring nanocrystalline sowing and vertical growth to develop doped contacts, and contact-free laser transfer printing to deposit low-shading grid lines. High-performance cells of various thicknesses (55-130 μm) are fabricated, with certified efficiencies of 26.06% (57 μm), 26.19% (74 μm), 26.50% (84 μm), 26.56% (106 μm) and 26.81% (125 μm). The wafer thinning not only lowers the weight andcost, but also facilitatesthecharge migration and separation.It is found thatthe 57-μm flexible and thin solarcell shows the highest power-to-weight ratio (1.9 W g-1) and open-circuit voltage (761 mV)compared to the thick ones. All of the solar cells characterized have an area of 274.4 cm2, and the cell components ensure reliability in potential-induced degradation and light-induced degradation ageingtests. This technological progress provides a practical basis for the commercialization of flexible, lightweight, low-cost and highly efficient solar cells, and the ability to bend or roll up crystalline silicon solar cells for travel is anticipated.

Characterization of a Heterojunction Silicon Solar Cell by Means of Impedance Spectroscopy.

Impedance spectroscopy provides relevant knowledge on the recombination and extraction of photogenerated charge carriers in various types of photovoltaic devices. In particular, this method is of great benefit to the study of crystalline silicon (c-Si)-based solar cells, a market-dominating commercial technology, for example, in terms of the comparison of various types of c-Si devices. This study investigates the dark and light electrophysical characteristics of a heterojunction silicon solar cell fabricated using plasma-enhanced chemical vapor deposition. The measurements are performed at various applied biases, enabling the determination of complex resistance, characteristic time, capacitive response and impurity concentration within the semiconductor junction and to correlate them with the device performance. In addition, the impedance spectra of the studied cell were investigated as a function of temperature. Studies of the frequency and temperature dependences of capacitance do not reveal a significant presence of thermally activated centers of free carrier capture, concomitant with a very small value of the activation energy extracted from an Arrhenius-type analysis. This leads to a conclusion that these centers are likely not impactful on the device operation and efficiency.

Enhancing Electrical and Physical Contacts of Copper‐Electroplated Silicon Heterojunction Solar Cells through Chemical Pretreated Seed Layers

Copper electroplating offering the potential to replace low‐temperature sintered silver pastes holds significant promise as a metallization process for silicon heterojunction (SHJ) solar cells (SCs). To unlock the full potential of copper electroplating, it is crucial to enhance the contact properties between the electroplated grids and the indium tin oxide (ITO) films, addressing both contact resistivity and physical adhesion. Herein, a zinc‐assisted Fe2+ system to modify the ITO film is used, leading to the formation of an In/Sn/SnO mixed‐metal transition layer. This transition layer serves as a seed layer for metal electroplating, reducing contact resistivity and enhancing the mechanical connection between the electroplated metals and the ITO films. Following the ITO pretreatment process, the contact resistivity is significantly reduced from 1.4 to 0.2 mΩ cm2, and the peel force value of the pretreated sample reaches 14.2 N mm−1, which is 75.3% higher than that of the untreated sample. The proof‐of‐concept SHJ SC with copper electroplating after ITO pretreatment achieves a remarkable power conversion efficiency of 22.6%. These results clearly demonstrate that ITO pretreatment using the zinc‐assisted Fe2+ system is an effective approach for enhancing contact properties and improving the performance of copper‐electroplated SHJ SCs, showcasing significant potential for industry applications.

Reliability of transparent conductive oxide in ambient acid and implications for silicon solar cells

Transparent conductive oxide (TCO) films, known for their role as carrier transport layers in solar cells, can be adversely affected by hydrolysis products from encapsulants. In this study, we explored the morphology, optical-electrical properties, and deterioration mechanisms of In2O3-based TCO films under acetic acid stress. A reduction in film thickness and carrier concentration due to acid-induced corrosion was observed. X-ray photoelectron spectroscopy and inductively coupled plasma emission spectrometry analyses revealed that TCOs doped with less-reactive metals exhibited enhanced corrosion resistance. The efficiency of silicon heterojunction (SHJ) solar cells with tin-doped indium oxide, titanium-doped indium oxide, and zinc-doped indium oxide films decreased by 10%, 26%, and 100%, respectively, after 200 ​h of corrosion. We also found that tungsten-doped indium oxide could effectively safeguard SHJ solar cells against acetic acid corrosion, which offers a potential option for achieving long-term stability and lower levelized cost of solar cell systems. This research provides essential insights into selecting TCO films for solar cells and highlights the implications of ethylene-vinyl acetate hydrolysis for photovoltaic modules.

Enhancing performance of heterojunction silicon solar cells through atomic-layer-deposited MoOx hole contact and atomic-layer-deposited AlZnO layer

We present the performance enhancement of a heterojunction Si solar cell facilitated by incorporating an atomic-layer-deposited (ALD) MoOx hole contact layer and an ALD Al-doped ZnO (AZO) transparent conductive oxide (TCO). ALD MoOx thin films as a hole-selective contact layer instead of P+-doped amorphous Si in Si heterojunction solar cells, with subsequent growth of ALD AZO films grown on the MoOx layer preceding the indium-tin-oxide sputtering deposition. Integrating ALD MoOx hole-selective contact and ALD AZO TCO manifests an augmentation in the short-circuit current in heterojunction Si solar cells due to the heightened carrier transport and concurrent reduction in sputtering-induced damage. Consequently, the heterojunction Si solar cell employing the ALD MoOx film and ALD AZO layer yielded a 1.1 % increase in efficiency relative to the reference heterojunction solar cell.

A novel silver-doped nickel oxide hole-selective contact for crystalline silicon heterojunction solar cells

A novel silver-doped nickel oxide hole-selective contact for crystalline silicon heterojunction solar cells

Post-annealing-free BaOxFy/LiF-based stack electron-selective contacts for high efficiency crystalline silicon solar cells featuring ultra-low contact resistivity

In silicon heterojunction and tunnel oxide passivating contact crystalline silicon (c-Si) solar cells based on successful passivating contacts technologies, an annealing activation step is indispensable to achieve a suitably low contact resistivity (ρc), which is a costly and non-ideal process. Here, combined with a calcium aluminium (Ca:Al) alloy electrode, a low work function barium oxide and lithium fluoride (BaOxFy/LiF) stack electron-selective contact (ESC) without an annealing activation step on c-Si solar cells clinches an ultra-low ρc of 1.4 mΩ·cm2 delivering a power conversion efficiency (PCE) of 20.5 %. The BaOxFy/LiF/Ca:Al stack structure is built by BaOx/LiF/Ca/Al hybrid structure via a facile continuous thermal evaporation process. As a proof of concept, the stacked BaOxFy/LiF/Ca:Al/Al contact is applied to the rear side of c-Si solar cells, achieving a PCE of 20.5 % with an open-circuit voltage of 625.7 mV, an impressive fill factor of 83.5 % and a short-circuit current density of 39.2 mA/cm2. With the aid of a transient photovoltage setup, the carrier recombination mechanism of the stacked BaOxFy/LiF/Ca:Al structure is explored. This work demonstrates an alternative idea for undoped ESCs, showing potential for next-generation cost-effective ultrathin-slice c-Si solar cells (∼80 μm) with high efficiency, and low-parasitic light absorption losses.

Structural and optical properties of phosphorous doped nanocrystalline silicon deposited using a VHF PECVD process for silicon heterojunction solar cells and optimization of a simple p-n junction cell using SCAP-1D tool.

Initially hydrogenated silicon (Si:H) thin films have been deposited using a plasma-enhanced chemical vapor deposition technique (PECVD) using silane (SiH4) as a precursor gas diluted in an inert gas argon (Ar) environment. Subsequently phosphine gas (PH3) was used as the n-type dopant and the deposition was carried out at a fixed substrate temperature of 200 °C. The PH3 flow rate was varied in the range of 0-1 sccm. The effect of PH3 flow rates on optical, electrical, and structural properties of hydrogenated amorphous and micro/nanocrystalline silicon films has been investigated and detailed analysis is presented. These films may find application in heterojunction solar cells as an emitter layer. Further, a crystalline silicon (c-Si) based simple p-n junction solar cell is simulated using an SCAP-1D tool to observe the effect of layer thickness and doping density on solar cell parameters.

Potential‐induced degradation in bifacial silicon heterojunction solar modules: Insights and mitigation strategies

AbstractPotential‐induced degradation (PID) may be a serious concern in photovoltaic (PV) modules and plants, particularly when approaching high system voltages (1500+ V). Here, we investigate PID occurring in bifacial rear‐emitter silicon heterojunction (SHJ) solar cells encapsulated in a glass/glass (G/G) module configuration with ethylene vinyl acetate (EVA) as an encapsulant. PID testing was performed at 85°C in 85% relative humidity (RH), and the solar cells were subjected to −1 kV and +1 kV for up to 800 h. SHJ cells were found to degrade when subjected to −1 kV, and to a lesser extent when left unbiased in damp heat (DH) conditions, while the application of +1 kV prevented degradation. Although prone to PID after extended test durations, the SHJ mini‐modules investigated in this study noticeably passed the industry standard (IEC 61215:2021) PID test of 96 h. The degradation was primarily characterized by losses in short‐circuit current (ISC) at the front side, followed by fill factor (FF) and open‐circuit voltage (VOC). A cross‐sectional transmission electronic microscopy analysis of the laminates subjected to −1 kV highlighted a transport of sodium (Na) through the transparent conductive oxide (TCO), reaching the amorphous Si/TCO interface. The samples tested in DH conditions and with positive PID test conditions did not exhibit such a migration of Na. To account for these observations, we updated a previously proposed model describing the sensitivity of SHJ cells to water. In our degradation model, moisture in the module corrodes the glass, creating sodium hydroxide (NaOH) that then percolate through the EVA before reaching the SHJ cell. The application of a high negative bias amplifies the previous mechanism by increasing the availability of Na+ and also enhances the drift of Na+ through the EVA to the cell. Finally, we demonstrate that PID can be mitigated or suppressed at the module level by using a high‐volume resistivity encapsulant with a low water vapor transmission rate (WVTR) or by encapsulating SHJ solar cells in a configuration impermeable to water (e.g., using an edge sealant).

(Invited) Interface Treatments for High-Efficiency MoOx Based Silicon Heterojunction Solar Cells

Silicon based solar cells dominate the market of photovoltaics, which hold the highest potential for green electricity production. A front/back-contacted architecture combined with the silicon-based heterojunction (SHJ) concept realized a world record efficiency of 26.3%1. However, conventional silicon-based doped layers, which work as carrier selective transport layers, are not optically transparent.Transition metal oxides are promising candidates for SHJ solar cells due to their advantageous opto-electronic properties. Molybdenum oxide (MoOx) with high work function (WF) has achieved highly efficient solar cells with 23.5% efficiency2. However, depositing high quality MoOx thin film on top of a-Si:H is challenging due to highly reactive surfaces3. This interaction may result in interfacial oxidation, lower Mo oxidation states and reduced WF4,5. In turn, electrical performances of solar cells featuring MoOx are poorer3 than standard SHJ devices.Several attempts have been made to prevent the reaction between MoOx and (i)a-Si:H. Pre-annealing4 of a-Si:Hand pre-growth of SiOx layer6 have been proposed as effective ways to prevent the degradation of MoOx. Nevertheless, those approaches require extra process steps that make MoOx integration not immediately viable in industrial environment. In our previous work, we proposed a plasma treatment (PT) at MoOx/(i)a-Si:H interface that demonstrated to mitigate dipole effect and resulted in improved cell performance7. After optimizing the interface treatment, even thinner MoOx layer could be applied.The solar cells were fabricated using 260±20 μm 4-inch double-side textured n-type <100> FZ wafers. (i)a-Si:H was deposited by plasma-enhanced chemical vapor deposition on both sides, while (n)a-Si:H only at the rear side. We carried out two different plasma treatments on the (i)a-Si:H interface prior MoOx deposition: one called PT from a mixture of SiH4, H2 and CO2 and another called PTB from a mixture of SiH4, H2, CO2 and B2H6. One sample without plasma treatment (noPT) was used as reference to evaluate the efficacy of the proposed method. A thickness series from 1 to 4 nm of MoOx was thermally evaporated from MoO3 powder at the pressure of 5×10-6 mbar. After that, optimized 50-nm and 150-nm thick tungsten-doped indium oxide (IWO) layers were sputtered through a hard mask at front and rear side, respectively, defining six 2×2 cm2 solar cells per wafer. As metal contact at the front side, we used room temperature Cu plating8 with a metal coverage fraction of 1.575%; at the rear side, 500-nm thick Ag layer was sputtered on the full device area.We studied the impact of different plasma treatment conditions on MoOx film quality and cells’ performance. MoOx film quality was assessed based on O vacancies inside the film4. The samples with interface treatments contain less O vacancies than the sample without treatment. It is noticeable that the cell precursors endowed with PTB yield higher fill factor (FF) than other types of precursors. Instead, PT and noPT samples benefitted from high short-circuit current density (J SC). Ultimately, PTB and PT samples achieved similar conversion efficiency. For the variation of MoOx thickness, we observed that even a slightly change in its thickness influences the solar cells’ electrical performance drastically. An ultra-thin, ~1.7-nm thick MoOx layer could provide sufficient field passivation (open circuit voltage, V OC = 721.4 mV) and good opto-electrical properties (FF = 82.18% and J SC-illuminated-area = 40.20 mA/cm2). With our approach we demonstrate word record cell with ISFH-certified conversion efficiency of 23.83% 9. 1 LONGi Solar 2021. 2 J. Dréon, et al., Nano Energy, 2020. 3 J. Geissbühler et al., Appl. Phys. Lett. 2015. 4 M.T. Greiner, et al., Adv. Funct. Mater. 2013. 5 M.T. Greiner, et al., Adv. Funct. Mater. 2012. 6 J. Tong, et al. ACS Appl. Mater. Interfaces. 2021. 7 L. Mazzarella, et al., Prog Photovolt Res Appl. 2020. 8 C. Han, et al., Solar RRL 2022. 9 L. Cao, et al., Prog. Photovolt. 2022.

Dipoles and defects caused by CO2 plasma improve carrier transport of silicon solar cells

AbstractCarrier‐selective contact is a fundamental issue for solar cells. For silicon heterojunction (SHJ) solar cells, it is important to improve hole transport because of the low doping efficiency of boron in amorphous silicon and the barrier stemming from valence band offset. Here, we develop a carbon dioxide (CO2) plasma treatment (PT) process to form dipoles and defect states. We find a dipole moment caused by longitudinal distribution of H and O atoms. It improves hole transport and blocks electron transport and thus suppresses carrier recombination. In the meantime, the CO2 PT process also results in defect states, which reduce passivation performance but improve hole hopping in the intrinsic amorphous layer. As a balance, an appropriate CO2 PT process at the i/p interface increases fill factor and power conversion efficiency of SHJ solar cells. We emphasize, based on sufficient evidences, this work finds a distinct role of the CO2 plasma in SHJ solar cells opposed to reported mechanisms.

Formation of Sn seeds on indium-free TCO for plating metallization of silicon heterojunction solar cells

The cost-prohibitive ITO and low-temperature silver paste pose significant challenges in the manufacture of SHJ solar cells. The SnO2-based TCO (indium-free) and Cu electroplating are promising solutions to address these issues. The key point of Cu electroplating is the seed layer for achieving good adhesion and low contact resistivity to the TCO. In this study, we report the electrochemical reduction method for the Sn seeds on FTO films, offering an alternative to the costly vacuum deposition process. We reveal that the electrochemical reduction process is dominated by the breaking of lower-energy bonds during electrons injection, resulting in the formation of tin nanoparticles which serve as the excellent seeds for the subsequent electroplating of a nickel metal layer on the FTO film. A tightly binding interface without any pores between the FTO film and Ni was observed, confirming its effectiveness. Our calculation results using the DFT method manifest that the binding energies of Sn/Ni interface are significantly lower than SnO2/Ni, indicating that Sn seeds present a lower energy barrier for deposition, which promotes Ni deposition kinetics. The integration of indium-free TCO, seeds preparation of electrochemical reduction, and copper electroplating is expected to boost SHJ solar cells in near future.

Highly conductive p-type nc-SiOX:H thin films deposited at 130°C via efficient incorporation of plasma synthesized silicon nanocrystals and their application in SHJ solar cells

We present highly conductive and transparent p-type hydrogenated nanocrystalline silicon oxide (p-type nc-SiOX:H) layers produced by Plasma Enhanced Chemical Vapor Deposition (PECVD) at 130°C and 150°C. We report on the crystalline volume fraction (XC), spectral broadening parameter C, and dark conductivity (σ) as functions of the growth temperature and RF power, and how these properties evolve with post-deposition annealing at 250°C and 300°C. Interestingly, we observe that the best layers in terms of crystalline volume fraction and conductivity are obtained at the lowest temperature and RF power, which we attribute to the soft landing of silicon nanocrystals synthesized in the plasma. The p-type nc-SiOX:H layers with the best properties on glass substrates are implemented as carrier-selective contacts in silicon heterojunction (SHJ) solar cells with the structure: (n) a-Si:H / (i) a-Si:H / n-type c-Si / (i) a-Si:H / (i) a-SiOX:H / (p) nc-SiOX:H / (p) nc-Si:H where all films are deposited by PECVD. The cells were completed with sputtered ITO on the front and rear sides plus Ag on the rear side, and Ag grid on the front, with the best devices showing conversion efficiencies of 21.8%, which, contrary to a-Si:H contact layers, are preserved or even slightly improved upon annealing at 240°C.

Improved interface microstructure between crystalline silicon and nanocrystalline silicon oxide window layer of silicon heterojunction solar cells

N-type hydrogenated nanocrystalline silicon oxide (nc-SiOx:H) is potential to enhance the performance of silicon heterojunction solar cells, but the raised plasma damage on underlying layer during the nc-SiOx:H deposition with a high-volume fraction of hydrogen is a burning issue. The underlying intrinsic hydrogenated amorphous silicon (i-a-Si:H) bilayer between n-type crystalline silicon (c-Si) and n-type nc-SiOx:H has been investigated by modulating silane (SiH4) gas flow rate (GFR) of interface porous layer. It has been found that the initial H-rich i-a-Si:H bilayer deposited by interfacial 1600 sccm GFR with relatively stable larger voids diameter and less voids number density can not only withstand hydrogen ions bombardment but also passivate c-Si surface well. Meanwhile, it also has been verified that the optimal n-seed deposition can further enhance both total hydrogen content and hydrogen content in compact structure to promote c-Si surface passivation and carrier transportation. The optimized SiH4 GFR for the interfacial i-a-Si:H growth and the appropriate deposition time of n-seed layer have been applied into the front passivation layer of silicon heterojunction solar cells, thus a high efficiency of approximate 25 % with high VOC and FF has been achieved.

Exceptional Hole-Selective Properties of Ta2O5 Films via Sn4+ Doping for High Performance Silicon Heterojunction Solar Cells.

Carrier-selective passivating contacts using transition metal oxides (TMOs) have attracted great attention for crystalline silicon (c-Si) heterojunction solar cells recently. Among them, tantalum oxide (Ta2O5) exhibits outstanding advantages, such as a wide bandgap, good surface passivation, and a small conduction band offset with c-Si, which is typically used as an electron-selective contact layer. Interestingly, it is first demonstrated that solution-processed Ta2O5 films exhibit a high hole selectivity, which blocks electrons and promotes hole transport simultaneously. Through the ozone pre-treatment of Ta2O5/p-Si interface and optimization of the film thickness (≈9nm), the interfacial recombination is suppressed and the contact resistivity is reduced from 178.0 to 29.3mΩcm2. Moreover, the Sn4+ doping increases both the work function and oxygen vacancies of the film, contributing to the improved hole-selective contact performance. As a result, the photoelectric conversion efficiencies of Ta2O5/p-Si heterojunction solar cells are significantly improved from 14.84% to 18.47%, with a high thermal stability up to 300°C. The work has provided a feasible strategy to explore new features of TMOs for carrier-selective contact applications, that is, bipolar carrier transport properties.

Defining specifications for accurate Metal/TCO specific contact resistivity measurements by TLM in silicon heterojunction devices

Measuring specific contact resistivity (ρc) in test vehicles representative of the final solar cell is critical for interface engineering in high efficiency devices such as silicon heterojunction (SHJ) solar cell. The Transfer Length Method (TLM) is commonly used for layer sheet resistance (Rsheet) and ρc evaluation and is valid for samples with charge transport confined in one conductive layer only. For metal/Transparent Conductive Oxide (TCO) interface ρc evaluation from SHJ cells precursors, there is a need to prevent any contribution from the conductive c-Si. In this work, we investigated by simulation and experimental approach the parameters restricting the current confinement inside the TCO. The first one is the mid-gap trap density (Dit) at the a-Si:H/c-Si interface which has no strong impact on current confinement on simulated TLM test structures. The second one is the variation of the activation energy (Ea=Ec−EF) of the a-Si:H contact layers. Both simulated and experimental results have demonstrated that three current distribution regimes are possible in the TLM test structure depending on the Ea value with only one regime, for Ea between 0.6 and 1.4 eV, enabling to isolate the metal/TCO interface. This condition is mandatory to maintain a sufficiently high potential barrier for electrons at the interfaces a-Si:H(p)/a-Si:H(i)/c-Si(n) and thus lateral current in the TCO layer to apply TLM on SHJ devices.

Progress on the reduction of silver consumption in metallization of silicon heterojunction solar cells

In this work, we have demonstrated the possibility to reduce silver consumption for highly efficient SHJ cells by fine-line screen printing using low temperature paste with a variety of screens with different meshes and openings. The achieved grid fingers were characterized for the line resistance and the printed width. Extremely narrow grid fingers with 13 μm width were realized on the 520-mesh. Compared to a standard 380-mesh, finer 520-mesh produced fingers that are on average 4 μm narrower and 8% less resistive, leading to a 0.08%abs. higher efficiency whilst reducing the overall silver consumption by 15%. Complementary simulations have shown that module wire configuration is an important driver to reduce silver consumption. Integration of test samples in modules showed that 1.6 mg/W frontside paste laydown resulted in marginally lower performance than reference samples with laydown of 4–6 mg/W.