Experimental and Monte Carlo study of semiconductor detectors response to 2.45 MeV-3.95 MeV neutrons at NCSR "Demokritos".

Large area, p–n junction, silicon carbide (SiC) detectors will be used to construct the new particle identification system of the focal plane detector of the MAGNEX magnetic spectrometer foreseeing the NUMEN experimental campaigns. The present work aims to the characterization of these devices in terms of the charge collection efficiency (CCE) both in the inner areas and along the perimeter. Ion beam induced charge technique with a proton microprobe is used for obtaining a 3D characterization of the CCE of the SiC detectors. The technique allows to draw the CCE profile with accuracy as low as 10 μ m along the surface area and to explore a possible dependence on the depth of the detectors by exploring a range of proton incident energies from 1.26 to 3.92 MeV. In the inner area a good uniformity in the signal collection is found, whereas an anomalous behavior is observed in two of the four edges. The present results suggest the necessity to improve the wafer cutting techniques together with a recast of the edge structures.

Performance evaluation of a silicon carbide semiconductor-based neutron detector for neutron-gamma discrimination

Silicon carbide photonic crystal fibers for broadband supercontinuum generation: Design and optimization

Abstract Optically active spin qubits are promising platforms for applications such as quantum sensing, quantum computing, and quantum communication. However, in many cases, materials challenges remain major hurdles for realizing these quantum technologies. These challenges include the effects of the host material, surfaces, and device integration, which can both undermine intrinsic ideal quantum properties, but also provide necessary engineering controls. In this issue, materials opportunities and challenges that impact the properties of spin qubits interfaced with light are discussed. The material platforms considered are diamond, silicon, silicon carbide, 2D materials and molecular systems. Both fundamental, engineering, and computational design aspects are considered. Such multifaceted, exploratory, and materials-centric advances are required to unlock the potential of these quantum systems. Graphical abstract

Directional propulsion of Leidenfrost droplets is effectively achieved on asymmetric microgroove arrays fabricated via one-step femtosecond laser direct writing. This is realized by simply setting the spacing of the laser scanning lines slightly smaller than the width of a single microgroove during the line-by-line laser scanning process. Because a femtosecond laser can process any given material, this method for driving Leidenfrost droplets is applicable to a wide range of material substrates, as experimentally verified on superhard alloys (magnesium alloy and titanium alloy), semiconductors (monocrystalline silicon and silicon carbide), and ceramics (aluminum nitride, sapphire). The proposed strategy also enables the transport of Leidenfrost droplets on composite surfaces made of different materials as well as the directional propulsion of various volatile liquids. Leveraging the controlled motion of Leidenfrost droplets and the flexible design of surface microstructures via femtosecond laser processing, several applications designed for extremely high-temperature environments have been realized, such as the trapping of Leidenfrost droplets, targeted cooling, self-rotation of Leidenfrost droplets (converting thermal energy into mechanical energy), and electricity generation.

The transition from conventional synchronous generators to inverter-based power systems has introduced significant challenges in stability, reliability, and protection coordination. Grid-forming inverters (GFMs) have emerged as a promising solution by emulating inertia and voltage regulation functions while enabling grid-supportive operation in weak or islanded networks. This study presents a structured qualitative review of the recent literature on GFM technologies. The selection process focused on control strategies, advanced semiconductor materials, protection frameworks, and cyber–physical security considerations. A thematic synthesis and comparative analysis were conducted to identify emerging trends and technical gaps. Among established approaches, virtual synchronous machine (VSM) and droop control remain widely adopted. More advanced strategies, including virtual oscillator control (VOC) and model predictive control (MPC), demonstrate improved dynamic performance in weak-grid conditions. Advances in semiconductor technologies, particularly Silicon Carbide (SiC) and Gallium Nitride (GaN), enable faster switching, higher efficiency, and enhanced thermal performance. The findings indicate a growing shift toward decentralized control architectures, fault-resilient converter topologies, and integrated protection–control co-design. Emerging solutions include grid-forming synchronization techniques that replace conventional phase-locked loop (PLL) structures, intrusion-tolerant inverter firmware with embedded anomaly detection, and predictive fault-clearing schemes tailored for low-inertia networks. Despite these advancements, several research gaps remain. These include limited large-scale validation of VOC and MPC strategies under high renewable penetration, insufficient interoperability metrics for legacy system integration, and a lack of standardized cybersecurity benchmarks across platforms. Future research should prioritize real-time experimental validation, robust protection co-design methodologies, and the development of regulatory and dynamic performance standards tailored to inverter-dominated grids. Strengthening protection coordination and interoperability frameworks will be essential to ensure the secure and stable deployment of GFMs in modern power systems.

Polishing pad conditioners are of critical importance in chemical mechanical polishing (CMP), acting as a key determinant of CMP efficiency and an indispensable consumable in the polishing process. In addition to acid-alkali resistance and outstanding stability, stringent requirements are also imposed on the physical properties of conditioners, including high hardness and wear resistance. Diamond films, with their exceptional comprehensive performance, can satisfactorily fulfill these demanding specifications. In this work, to investigate the bonding strength and wear resistance of diamond films deposited on a silicon carbide (SiC) substrate, four groups of diamond films with distinct processing parameters were synthesized via hot wire chemical vapor deposition (HWCVD) on SiC substrates. Nano-scratch tests were employed to characterize the bonding strength at the diamond film/SiC substrate interface, while wear tests under humid conditions with a 500 g load, accompanied by in-depth analysis of the associated wear mechanisms, were conducted. The results demonstrate that diamond films exhibit tremendous application potential as CMP pad conditioners in CMP processes.

Nanofluids are suspensions of nanoparticles in a base fluid. Water, ethylene glycol, engine oil, and others are often used as base fluids, whereas inorganic additives include metals, metal oxides, carbon-based materials, and non-oxide inorganic materials. According to recent research, a small amount of nanoparticles with high thermal conductivity can improve heat transfer in nanofluids. The expectations for nanofluids are increasing, making them the subject of intense research. Current interest is focused on materials that, in addition to high thermal conductivity, also have other favorable features, such as chemical resistance or resistance to high temperatures. Silicon carbide SiC, a material with many advantageous properties, is being considered as a candidate that may meet such expectations. Among the different polymorphs of SiC, the most common are numerous hexagonal α-SiC varieties with anisotropic properties and the only isotropic cubic β-SiC polytype. The latter was reported to have a thermal conductivity of 500 W/mK. The use of nanoparticles from different SiC polytypes in nanofluid studies often leads to incomparable results. Studies on nanofluids prepared from nanoparticles of various silicon carbide polytypes discussed in this article indicate that isotropic β-SiC nanoparticles may be a promising material. When nanofluids for diverse heat transfer applications are prepared, more detailed studies of all the nanoparticles used should be considered.

Nitrates and nitrites are inorganic anions which, beyond specific concentration threshold, are classified as water pollutants. Nitrate compounds are commonly used as fertilizers; however, their high concentration in soil and in wastewater, as well as their reduction to nitrites, pose serious environmental and human health risks. Therefore, detecting these ions in water intended for human consumption, zootechnical use, and agricultural applications is essential. This work presents a proof of concept for a spectroscopic prototype setup enabling simple, direct, and simultaneous detection of nitrates and nitrites in water. The device employs solid-state sensor technology and requires no sample pretreatment or chemicals. Ultimately, this apparatus will allow real-time, in-line process analysis. UV absorption bands centered at approximately 302 nm and 355 nm were selected for detecting nitrates and nitrites, respectively. Because nitrite exhibits a slight absorption at 302 nm as well, a straightforward method for simultaneous nitrate and nitrite detection is proposed. The proposed system incorporates a UV deuterium lamp, a 10 cm path length optical cuvette, and a custom home-built silicon carbide detector. This configuration enables testing various concentrations, achieving detection limits of 2.2 mg/L for nitrates and 0.5 mg/L for nitrites. Potential interferences from substances commonly found in drinking and treated agricultural wastewaters, including sodium bicarbonate, sodium sulfate, ammonium chloride, hydrogen peroxide, and sodium hypochlorite, were also investigated. Finally, a compact on-site and online monitoring future device is illustrated.

ABSTRACT This paper deals with online measurement of degradation sensitive electrical parameters leading to a health monitoring approach for silicon carbide power MOSFETs. The gate leakage current IGSS is chosen as a key indicator of the silicon carbide MOSFET gate oxide degradation as it provides information on its gate dielectric breakdown time. Due to the low amplitude of gate leakage current, on-line measurement of IGSS presents critical challenges because of the high transient current flowing through the gate during normal operation time. This paper presents an improved estimation circuit from an already existing one using the gate driver circuit. The proposed circuit is characterised under various VGS conditions for different temperatures. Finally, the circuit is successfully tested on an electronic chopper circuit for various Pulse Width Modulation (PWM) signal duty cycles.

The development of advanced aluminium hybrid metal matrix composites (AHMMCs) reinforced with rare earth oxides (REOs) remains a concern for the research community to produce lightweight materials for many advanced engineering applications with improved mechanical characteristics. To ensure the effective manufacturing of REOs-based composites, further research into the behavior of reinforcement with the matrix microstructure following composite preparation is required, as well as which strengthening process is best suited to improving mechanical qualities. The present paper aims to investigate the reinforcement SiC/Al 2 O 3 /CeO 2 effect on the microstructure of Al hybrid composites prepared using stir casting. Hybrid aluminium composites contains 5 to 15% wt.% of (silicon carbide and aluminium oxide) and 0.5 to 2.5 wt.% CeO 2 . The in-depth understanding of the microstructural formation mechanisms was analysed using the EBSD results. Variable mis-orientation threshold values obtained by EBSD were used to recognize the grain and subgrain structures. Low-angle grain boundaries (LAGBs) were defined within the range of 3°-15°, while high-angle grain boundaries (HAGBs) were considered as those with mis-orientation angles greater than 15°. Geometry necessary boundaries (GNBs) and LAGBs develop as a result of dynamic recovery (DRV) at tested places with minimal or moderate plastic deformation in all composites tested. The texture evolution at various locations is presented by the inverse pole figures.

Abstract Two-dimensional silicon carbides have attracted increasing interest due to their highly tunable band structures and rich physical properties. Among them, Si 9 C 15 is particularly notable for its intrinsic auxeticity, strongly anisotropic carrier mobility, and pronounced optical and thermoelectric responses. However, the controlled growth of Si 9 C 15 nano-islands has remained a challenge. Here, we report a novel growth technique for Si 9 C 15 nano-islands. By exploiting the mild segregation of carbon atoms from a Ru(0001) substrate, we fabricate discrete, crystalline Si 9 C 15 nano-islands at temperatures as low as ~400 ℃. Spectroscopic measurements reveal a spatial modulation of the local work function across the nano-island, which we attribute to the periodic potential landscape of the Si 9 C 15 lattice. Furthermore, we demonstrate that this island morphology enables the construction of Si 9 C 15 /graphene lateral heterostructures. Our work establishes a new pathway for fabricating Si 9 C 15 nanostructures as well as the heterostructures.

Recent Boron neutron capture therapy (BNCT) has shifted to accelerator-based systems. One of them is a compact neutron generator developed using silicon carbide (SiC) semiconductors by Fukushima SiC Applied Technology Co. However, neutron penetration remains a critical challenge for treating deep-seated tumors. This study investigated the potential of neutron sieve therapy, originally developed to enhance the depth dose distribution in X-ray therapy, to improve BNCT dose distribution via Monte Carlo simulations based on the Fukushima SiC BNCT system. Dose distribution changes were investigated using polyethylene and 6LiF-plastic in block and sieve shapes. The results show that the maximum thermal neutron fluence depth was shallower (deeper) with polyethylene (6LiF-plastic) filters. The sieve filter moderately altered the dose distribution compared to the block filter due to density differences. The maximum dose point shifted 8mm deeper using a sieve filter composed of 6LiF-plastic and polyethylene, with a 5.5% increase at 20mm depth in neutron fluence at the same skin dose.

A room-temperature flash method for recycling epoxy and glass fibre composites into silicon carbide

Abstract This paper presents design and evaluation of novel silicon carbide (SiC) dual-epitaxial trench junction barrier Schottky (DET-JBS) diode, elucidates the device's operational characteristics and underlying mechanisms from multiple perspectives. The DET-JBS diode structure employs a design featuring a well-controlled trenches formation over P-regions and linearly graded doping concentration of the above P-regions epilayer, which enhances forward conduction while mitigating the inherent weakness at the trench corners. Based on the calibrated technology computer aided design (TCAD) models based on the fabricated SBDs and electrical performance parameter, optimization on device critical parameters was performed relying on high-level technological feasibility. The optimized 1200 V – 20 A rating design criteria DET-JBS diode has a forward voltage drop (VF) of 0.195 V/mm2 and a breakdown voltage (VB) of 2088 V. Compared with the other similar trench type of JBS diode structures based on design considerations and evaluation on device performance, the DET-JBS diode demonstrates excellent performance in both forward and reverse characteristics.

The FLASH biological effect in radiotherapy has been observed to appear at ultra-high dose rates UHDR ( 40Gy/s), where the accurate dosimetry at such high rates is still a challenge. A new 4 4 array of SiC-based detectors (1mm diameter, 2.2mm pitch) is proposed for dosimetry in UHDR, as well as the feasibility of a position sensitive technology demonstrator covering 7 7 placed on a movable micro-stage to cover largersurfaces. In the ElectronFlash LINAC at the Institute Curie, two silicon carbide prototypes (a 2.2mm diameter single diode and a 4 4-array of 1mm diameter with a pitch of 2.2mm), biased at 0V, are exposed to a 0.5-5 pulsed electron beam of 7MeV alongside a flashDiamond PTW as reference dosimeter to characterize their response, time structure and positionresponse. A linearity better than 3.5% is observed up to 10Gy per pulse of the single diode device only limited by the reference dosimetry. The pulse structure measured is consistent with the reference beam current transformer installed in the LINAC, allowing for instantaneous pulse discrimination at UHDR and its verification in the measurement point. Moreover, results demonstrate the viability of using SiC arrays to quantify the dose per pulse in a 70 50 area with a granularity of 1 2.2 , paving the way to larger arrays and thus toward potential 2D dose monitoring. The possibility of a position sensitive SiC dose monitor for UHDR is demonstrated, as the technology demonstrator has been proven to maintain good linearity up to at least 10Gy per pulse, with a time resolution enough to observe microsecond pulses and position sensitivereadout.

Study on material removal by ultrasonic vibration-assisted polishing of silicon carbide wafer (4H-SiC)

Effect of silicon carbide on the thermal and mechanical properties of cementitious composites based on experimental and simulation study

Silicon carbide (SiC) is not only notoriously difficult to finish by chemical mechanical polishing (CMP) owing to its ultrahigh hardness and chemical inertness, but it has also become the material of choice for a new generation of harsh-environment sensors—including deep-UV photodiodes, piezoresistive pressure chips for turbine combustors, and micro-resonant chemical detectors—whose responsivity, quality factor, and long-term drift are exceedingly sensitive to sub-surface damage and nanoscale surface roughness. Consequently, elevating SiC-CMP surface quality and throughput is pivotal for manufacturing low-noise, reliable sensor dies at competitive cost. This research, therefore, explores the integration of a mixed-abrasive slurry (MAS) endowed with photocatalytic activity into the SiC-CMP process to realize a high-efficiency, cost-effective, and environmentally friendlier finishing route. The study details MAS preparation via high-energy ball milling and evaluates the polishing effectiveness of two distinct formulations. Using an MAS composed of SiO₂ and TiO₂/rGO abrasives, we achieve a material-removal rate of 823 nm/h and a surface roughness of 0.350 nm under UV irradiation, demonstrating the slurry's suitability for fabricating sensor-grade SiC surfaces. • A TiO₂/rGO–SiO₂ photocatalytic mixed abrasive slurry was developed for chemical mechanical polishing of single-crystal SiC. • Under UV irradiation, the photocatalytic mixed abrasive slurry achieved a removal rate of 823 nm/h and a surface roughness of 0.35 nm. • This photocatalytic mixed abrasive slurry offers a cost-effective and eco-friendly alternative to conventional acidic CMP processes.