Si Schottky Barrier Diodes Research Articles

A Large Near-Infrared Image of the Galactic Center

We have obtained a K band image of the central 30 × 40 arcminutes of the Galaxy at a scale of 1.4″/pixel using a 256 × 256 Pt: Si Schottky barrier diode array detector provided by the Hughes Aircraft Company. The excellent cosmetic quality and large field of this device provide an unprecedented view of the inner Galaxy. Images of the central 10 arcminutes at a scale of 0.9″/pixel in the H (1.65μm) and K (2.2μm) bands produced with the same detector array have been combined to produce a color picture, which clearly shows the circumnuclear molecular ring in absorption; this picture demonstrates directly that the southwestern side of the ring lies in front of, and the northeastern side behind, the Galactic center.

The effects of thermal silicidation of the current transport characteristics of Ti/〉111〈Si Schottky-barrier contacts

Using the interfacial-layer theory and assuming the Shockley-Read-Hall (SRH) statistics for the nonequilibrium occupancy of the interface states, the effects of Ti/〉111〈Si contact reactions on the nonideality of the current-voltage characteristics measured from the TiSi x (0 ⩽ x ⩽ 2)/ p( n)-Si Schottky-barrier diodes have been studied. From the analyses obtained by Auger Electron Spectroscopy (AES), X-ray diffraction, and I– V measurements, the abrupt change of thermal-equilibrium barrier height with respect to silicidation temperature is shown to be coincident with the drastic change of the measured ideality-factor in the forward I– V characteristics. This phenomenon has been justified to be correlated with the formation of stoichiometric TiSi 2 at the Ti/Si interface by thermal reactions. From the interface-state-apparent-spectrum (ISAS) measurements using both constant-temperature-Schottky-capacitance-spectroscopy (CTSCS) and I– V methods, we have shown that the transition of electrical characteristics should be attributed to the large variations of the ISAS when the TiSi 2 starts to form at the Ti/Si interface. Moreover, with the help of a simplified occupation function model for the interface states, the observed transition can be interpreted as the changes of thermal-equilibrium barrier height, real interface-state density, and effective minority-carrier to majority-carrier capture rate ratio.

Minority-carrier injection in Pt—Si Schottky-barrier diodes at high current densities

This paper presents a study of minority-carrier injection in platinum-silicide Schottky-barrier diodes at room temperature under steady-state dc bias for current densities extending to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> A /cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The phenomenon is experimentally investigated by measuring the minority-carrier storage using a reverse-recovery technique and by measuring the conductivity-modulated J-V characteristics. The theoretical treatment is based on a one-dimensional numerical simulation of the equations governing steady-state dc carrier transport in the device, corrected for lateral voltage drop in the n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> buried layer. Simulation results are in good agreement with the measured carrier storage as well as the J-V characteristics. The minority-carrier injection ratio is calculated to be about 0.3 percent at 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . This degree of injection causes appreciable conductivity modulation and leads to stored charge densities on the order of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-5</sup> C/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . For reverse switching currents on the order of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , the majority of excess carriers were observed to discharge during the first 2 ns of reverse-recovery while a secondary discharge of minority carriers, lasting a few additional nanoseconds, was observed.

Stress effect of Ag—n-type Si Schottky-barrier diode

The uniaxial stress effect on Ag-n-type Si Schottky-barrier diodes was examined. The simple barrier height variation could not explain the observed results of the current increment in both forward and reverse <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">J- V</tex> characteristics (particularly the absence of saturation current in the reverse-biased region) and the constant barrier height obtained from <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C-V</tex> measurement under pressure. It was found that application of pressure effectively diminishes the potential barrier height, affecting only the electrons contributing to current transport. Its effect can be expressed by introduction of the stress-sensitive length x <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf> . Experimental results show that x <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">s</inf> is proportional to the applied pressure.

Behavior of various silicon Schottky barrier diodes under heat treatment

Variations of Schottky forward voltage with heat treatment have been observed for AlPd 2Si Si and Si-doped AlPd 2Si Si Schottky barrier diodes. These variations have been reduced to a minimum by the use of a barrier metal such as TiW between Al and the silicided contacts.

An Integrated Photodetector Using the Partially Metal-Clad-Dielectric-Slab Waveguide Structure

A hybrid-type integrated photodetector which uses metal-semiconductor Schottky barrier diode incorporated in the partially metal-clad-dielectric-slab waveguide (PMC line) structure is proposed, analysed and experimentally studied. The PMC line serves not only as electrodes but also as a two-dimensionally confining structure for a guided optical wave. The wave is coupled from the PMC line into the depletion layer of the diode through a coupling layer and a thin metal film; this scheme avoids the reflection loss inherent to conventional detectors. The analysis indicates that the present photodetector using Si-Schottky barrier diode can be designed so that the quantum efficiency of 92% and cut-off frequency of 6.1 GHz are obtainable at 0.63 µm wavelength.

Fabrication of ZnSi Schottky barrier diode by controlling the substrate temperature during evaporation

Fabrication of ZnSi Schottky barrier diode by controlling the substrate temperature during evaporation

Capacitive effects of Au and Cu impurity levels in Pt- N type Si Schottky barriers

Au and Cu impurity effects on the capacitance-voltage ( C– V) relationship of Pt- n type Si Schottky barrier diodes have been investigated over the frequency range of 100 Hz to 500 kHz at 200°K and 300°K. The barrier height of the Pt-Si system measured by C– V, I– V, and photothreshold techniques was 0.83±0.01 eV. Deep level C– V effects previously predicted by Roberts and Crowell were observed. Diodes on phosphorus-doped Si nearly compensated with Au clearly exhibited a non-monotonic low frequency C– V relationship. An inflection point in the C −2- V curve attributable to the Au donor level 0.77 eV from the conduction band edge was observed. The experimental data show that the presence of deep levels makes barrier height measurements appreciably ambiguous and that impurity profiles determined from a C– V relationship using a model which neglects their presence can be shifted appreciably both in apparent magnitude and apparent position.

Behavior of AlSi Schottky barrier diodes under heat treatment

Behavior of AlSi Schottky barrier diodes under heat treatment

Integrated 6-GHz receiver front-end circuits for a radio relay system

A 6-GHz integrated front end was made using microwave integrated circuits and satisfying system specifications. The front end consists of a mixer and a local oscillator made from a 1.5-GHz phase-locked loop and a frequency quadrupler. A noise figure better than 6 dB was achieved using Si Schottky barrier diodes.

FORWARD CURRENT-VOLTAGE CHARACTERISTICS AND DIFFERENTIAL RESISTANCE PEAK OF A SCHOTTKY BARRIER DIODE ON HEAVILY DOPED SILICON

An analysis of the forward current-voltage data for a temperature range of 77.2° to 423°K on a Cr–Si (ND = 7 × 1018 cm−3) Schottky barrier diode is given. The I-V behavior of such a diode, which obviously does not follow the simple Schottky theory, is not explained by the more recent calculations of Padovani and Stratton, and of Crowell and Rideout in which field emission is taken into account. It is observed that the peak in differential resistance and its variation with voltage on such a diode is in reasonable agreement with the theories of Stratton and Padovani, and of Crowell and Rideout.