This paper presents the design considerationand fabrication of a vertical cavity surfaceemitting (SE) laser using GaAlAs/ A1As distributed Bragg reflectors (DBR). From theoretical calculation, a peak reflectivity of 99% can be expected even when we consider a reasonable loss .The deterioration of reflectivity due to thickness errors was examined. An MOCVD-grown DBRexhibited are flectivity of 97% at the wavelength of O.88 μm . The thre shold current of a 30 μmdiameter device with a simple mesa cap structure was 200 mA under the room-temperature pulsedcondition. The threshold of 40 mA was obtained by a 10 μm diameter device with a claddingetchedcurrent confinement structure.